Transistörler - FET, MOSFET - Tekil
- Komponent
- 40,131
- Marka
- 50
Komponentler
10,000 sonuç · Sayfa 171/200| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
EPC2035
GANFET N-CH 60V 1.7A DIE |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | — | 60 V | 1.7A (Ta) | 45mOhm @ 1A, 5V | 2.5V @ 800µA | 1.15 nC @ 5 V | 115 pF @ 30 V | 5V | +6V, -4V | — |
|
EPC2036
GANFET N-CH 100V 1.7A DIE |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | — | 100 V | 1.7A (Ta) | 65mOhm @ 1A, 5V | 2.5V @ 600µA | 0.91 nC @ 5 V | 90 pF @ 50 V | 5V | +6V, -4V | — |
|
EPC2037
GANFET N-CH 100V 1.7A DIE |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | — | 100 V | 1.7A (Ta) | 550mOhm @ 100mA, 5V | 2.5V @ 80µA | 0.12 nC @ 5 V | 14 pF @ 50 V | 5V | +6V, -4V | — |
|
EPC2038
GANFET N-CH 100V 500MA DIE |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | — | 100 V | 500mA (Ta) | 3.3Ohm @ 50mA, 5V | 2.5V @ 20µA | 0.044 nC @ 5 V | 8.4 pF @ 50 V | 5V | +6V, -4V | — |
|
EPC2039
GANFET N-CH 80V 6.8A DIE |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | — | 80 V | 6.8A (Ta) | 25mOhm @ 6A, 5V | 2.5V @ 2mA | 2.4 nC @ 5 V | 210 pF @ 40 V | 5V | +6V, -4V | — |
|
EPC2040
GANFET NCH 15V 3.4A DIE |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | — | 15 V | 3.4A (Ta) | 30mOhm @ 1.5A, 5V | 2.5V @ 1mA | 0.93 nC @ 5 V | 105 pF @ 6 V | 5V | — | — |
|
EPC2045
GANFET N-CH 100V 16A DIE |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | — | 100 V | 16A (Ta) | 7mOhm @ 16A, 5V | 2.5V @ 5mA | 6.5 nC @ 5 V | 685 pF @ 50 V | 5V | +6V, -4V | — |
|
EPC2049ENGRT
GANFET N-CH 40V 16A DIE |
EPC | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | — | 40 V | 16A (Ta) | 5mOhm @ 15A, 5V | 2.5V @ 6mA | 7.6 nC @ 5 V | 805 pF @ 20 V | 5V | +6V, -4V | — |
|
EPC2050
TRANS GAN BUMPED DIE |
EPC | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
EPC2051
GANFET N-CH 100V 1.7A DIE |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | — | 100 V | 1.7A (Ta) | 25mOhm @ 3A, 5V | 2.5V @ 1.5mA | 2.1 nC @ 5 V | 258 pF @ 50 V | 5V | +6V, -4V | — |
|
EPC2052
GANFET N-CH 100V 8.2A DIE |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | — | 100 V | 8.2A (Ta) | 13.5mOhm @ 11A, 5V | 2.5V @ 3mA | 4.5 nC @ 5 V | 575 pF @ 50 V | 5V | +6V, -4V | — |
|
EPC2053
GANFET N-CH 100V 48A DIE |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | — | 100 V | 48A (Ta) | 3.8mOhm @ 25A, 5V | 2.5V @ 9mA | 14.8 nC @ 5 V | 1895 pF @ 50 V | 5V | +6V, -4V | — |
|
EPC2054
TRANS GAN 200V DIE 60MOHM |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | — | 200 V | 3A (Ta) | 43mOhm @ 1A, 5V | 2.5V @ 1mA | 4.3 nC @ 5 V | 573 pF @ 100 V | 5V | +6V, -4V | — |
|
EPC2055
GANFET N-CH 40V 29A DIE |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | Standard | 40 V | 29A (Ta) | 3.6mOhm @ 15A, 5V | 2.5V @ 7mA | 8.5 nC @ 5 V | 1111 pF @ 20 V | 5V | +6V, -4V | — |
|
EPC2059
TRANS GAN 170V DIE .009OHM |
EPC | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
EPC2059ENGRT
TRANS GAN 170V .009 OHM BUMP DIE |
EPC | Market | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
EPC2065
GAN FET 80V .0027OHM 8BUMP DIE |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | Standard | 80 V | 60A (Ta) | 3.6mOhm @ 25A, 5V | 2.5V @ 7mA | 12.2 nC @ 5 V | 1449 pF @ 40 V | 5V | +6V, -4V | — |
|
EPC2067
TRANS GAN .0015OHM 40V 14LGA |
EPC | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
EPC2069
GAN FET 40V .002OHM 8BUMP DIE |
EPC | Active | — | — | — | GaNFET (Gallium Nitride) | — | — | N-Channel | — | 40 V | — | — | — | — | — | — | — | — |
|
EPC2070
TRANS GAN DIE 100V .022OHM |
EPC | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
EPC2202
GANFET N-CH 80V 18A DIE |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die Outline (6-Solder Bar) | — | N-Channel | — | 80 V | 18A (Ta) | 17mOhm @ 11A, 5V | 2.5V @ 3mA | 4 nC @ 5 V | 415 pF @ 50 V | 5V | +5.75V, -4V | — |
|
EPC2203
GANFET N-CH 80V 1.7A DIE |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | — | 80 V | 1.7A (Ta) | 80mOhm @ 1A, 5V | 2.5V @ 600µA | 0.83 nC @ 5 V | 88 pF @ 50 V | 5V | +5.75V, -4V | — |
|
EPC2204
TRANS GAN 100V DIE 5.6MOHM |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | — | 100 V | 29A (Ta) | 6mOhm @ 16A, 5V | 2.5V @ 4mA | 7.4 nC @ 5 V | 851 pF @ 50 V | 5V | +6V, -4V | — |
|
EPC2206
GANFET N-CH 80V 90A DIE |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | — | 80 V | 90A (Ta) | 2.2mOhm @ 29A, 5V | 2.5V @ 13mA | 19 nC @ 5 V | 1940 pF @ 40 V | 5V | +6V, -4V | — |
|
EPC2207
TRANS GAN 200V DIE .022OHM |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | — | 200 V | 14A (Ta) | 22mOhm @ 14A, 5V | 2.5V @ 2mA | 5.9 nC @ 5 V | 600 pF @ 100 V | 5V | +6V, -4V | — |
|
EPC2212
GANFET N-CH 100V 18A DIE |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | — | 100 V | 18A (Ta) | 13.5mOhm @ 11A, 5V | 2.5V @ 3mA | 4 nC @ 5 V | 407 pF @ 50 V | 5V | +6V, -4V | — |
|
EPC2214
GANFET N-CH 80V 10A DIE |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | — | 80 V | 10A (Ta) | 20mOhm @ 6A, 5V | 2.5V @ 2mA | 2.2 nC @ 5 V | 238 pF @ 40 V | 5V | +6V, -4V | — |
|
EPC2215
GAN TRANS 200V 8MOHM BUMPED DIE |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | — | 200 V | 32A (Ta) | 8mOhm @ 20A, 5V | 2.5V @ 6mA | 17.7 nC @ 5 V | 1790 pF @ 100 V | 5V | +6V, -4V | — |
|
EPC2216
GANFET N-CH 15V 3.4A DIE |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | Standard | 15 V | 3.4A (Ta) | 26mOhm @ 1.5A, 5V | 2.5V @ 1mA | 1.1 nC @ 5 V | 118 pF @ 7.5 V | 5V | +6V, -4V | — |
|
EPC2218
GANFET N-CH 100V DIE |
EPC | Active | — | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | — | 100 V | — | — | — | — | — | — | — | — |
|
EPC2219
TRANS GAN 65V AECQ101 3.3OHM DIE |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | — | 65 V | 500mA (Ta) | 3.3Ohm @ 59mA, 5V | 2.5V @ 100µA | 0.064 nC @ 5 V | 10 pF @ 32.5 V | 5V | — | — |
|
EPC2302
TRANS GAN 100V DIE .0019OHM |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | 7-PowerWQFN | GaNFET (Gallium Nitride) | 7-QFN (3x5) | — | N-Channel | — | 100 V | 101A (Ta) | 1.8mOhm @ 50A, 5V | 2.5V @ 14mA | 23 nC @ 5 V | 3200 pF @ 50 V | 5V | +6V, -4V | — |
|
EPC2302ENGRT
TRANS GAN 100V DIE .0019OHM |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | 7-PowerWQFN | GaNFET (Gallium Nitride) | 7-QFN (3x5) | — | N-Channel | — | 100 V | 101A (Ta) | 1.8mOhm @ 50A, 5V | 2.5V @ 14mA | 23 nC @ 5 V | 3200 pF @ 50 V | 5V | +6V, -4V | — |
|
EPC7014UBC
GAN FET HEMT 60V 1A COTS 4UB |
EPC Space | Active | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, No Lead | GaNFET (Gallium Nitride) | 4-SMD | — | N-Channel | — | 60 V | 1A (Tc) | 580mOhm @ 1A, 5V | 2.5V @ 140µA | — | 22 pF @ 30 V | 5V | +7V, -4V | — |
|
EPC8002
GANFET N-CH 65V 2A DIE |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | — | 65 V | 2A (Ta) | 530mOhm @ 500mA, 5V | 2.5V @ 250µA | — | 21 pF @ 32.5 V | 5V | +6V, -4V | — |
|
EPC8004
GANFET N-CH 40V 4A DIE |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | — | 40 V | 4A (Ta) | 110mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.45 nC @ 5 V | 52 pF @ 20 V | 5V | +6V, -4V | — |
|
EPC8009
GANFET N-CH 65V 4A DIE |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | — | 65 V | 4A (Ta) | 130mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.45 nC @ 5 V | 52 pF @ 32.5 V | 5V | +6V, -4V | — |
|
EPC8010
GANFET N-CH 100V 4A DIE |
EPC | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | — | N-Channel | — | 100 V | 4A (Ta) | 160mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.48 nC @ 5 V | 55 pF @ 50 V | 5V | +6V, -4V | — |
|
ES6M2T2CR
MOSFET/SCHOTTKY NCH SOT-563 |
ROHM Semiconductor | Last Time Buy | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
ES6U1T2R
MOSFET P-CH 12V 1.3A 6WEMT |
ROHM Semiconductor | Last Time Buy | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | MOSFET (Metal Oxide) | 6-WEMT | 700mW (Ta) | P-Channel | Schottky Diode (Isolated) | 12 V | 1.3A (Ta) | 260mOhm @ 1.3A, 4.5V | 1V @ 1mA | 2.4 nC @ 4.5 V | 290 pF @ 6 V | 1.5V, 4.5V | ±10V | — |
|
ES6U2T2R
MOSFET N-CH 20V 1.5A 6WEMT |
ROHM Semiconductor | Obsolete | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | MOSFET (Metal Oxide) | 6-WEMT | 700mW (Ta) | N-Channel | Schottky Diode (Isolated) | 20 V | 1.5A (Ta) | 180mOhm @ 1.5A, 4.5V | 1V @ 1mA | 1.8 nC @ 4.5 V | 110 pF @ 10 V | 1.5V, 4.5V | ±10V | — |
|
ES6U3T2CR
MOSFET N-CH 30V 1.4A WEMT6 |
ROHM Semiconductor | Last Time Buy | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
ES6U41FU7T2CR
MOSFET/SCHOTTKY NCH SOT-563 |
ROHM Semiconductor | Last Time Buy | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
ES6U41FU7T2R
MOSFET/SCHOTTKY NCH SOT-563 |
ROHM Semiconductor | Last Time Buy | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
ES6U41T2R
MOSFET N-CH 30V 1.5A 6WEMT |
ROHM Semiconductor | Last Time Buy | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | MOSFET (Metal Oxide) | 6-WEMT | 700mW (Ta) | N-Channel | Schottky Diode (Isolated) | 30 V | 1.5A (Ta) | 240mOhm @ 1.5A, 4.5V | 1.5V @ 1mA | 2.2 nC @ 4.5 V | 80 pF @ 10 V | 2.5V, 4.5V | ±12V | — |
|
ES6U42FU7T2CR
MOSFET/SCHOTTKY NCH SOT-563 |
ROHM Semiconductor | Last Time Buy | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
ES6U42FU7T2R
MOSFET/SCHOTTKY NCH SOT-563 |
ROHM Semiconductor | Last Time Buy | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
ES6U42T2R
MOSFET P-CH 20V 1A 6WEMT |
ROHM Semiconductor | Last Time Buy | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | MOSFET (Metal Oxide) | 6-WEMT | 700mW (Ta) | P-Channel | Schottky Diode (Body) | 20 V | 1A (Ta) | 390mOhm @ 1A, 4.5V | 2V @ 1mA | 2.1 nC @ 4.5 V | 150 pF @ 10 V | 2.5V, 4.5V | ±12V | — |
|
FA38SA50LC
MOSFET N-CH 500V 38A SOT-227 |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | SOT-227 | 500W (Tc) | N-Channel | — | 500 V | 38A (Tc) | 130mOhm @ 23A, 10V | 4V @ 250µA | 420 nC @ 10 V | 6900 pF @ 25 V | 10V | ±20V | — |
|
FA57SA50LC
MOSFET N-CH 500V 57A SOT-227 |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | SOT-227 | 625W (Tc) | N-Channel | — | 500 V | 57A (Tc) | 80mOhm @ 34A, 10V | 4V @ 250µA | 338 nC @ 10 V | 10000 pF @ 25 V | 10V | ±20V | — |