Transistörler - FET, MOSFET - Tekil
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Komponentler
10,000 sonuç · Sayfa 2/200| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2N6782
MOSFET N-CH 100V 3.5A TO39 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AF Metal Can | MOSFET (Metal Oxide) | TO-39 | 800mW (Ta), 15W (Tc) | N-Channel | — | 100 V | 3.5A (Tc) | 600mOhm @ 2.25A, 10V | 4V @ 250µA | 8.1 nC @ 10 V | — | 10V | ±20V | — |
|
2N6782U
MOSFET N-CH 100V 3.5A 18ULCC |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 18-CLCC | MOSFET (Metal Oxide) | 18-ULCC (9.14x7.49) | 800mW (Ta), 15W (Tc) | N-Channel | — | 100 V | 3.5A (Tc) | 600mOhm @ 2.25A, 10V | 4V @ 250µA | 8.1 nC @ 10 V | — | 10V | ±20V | — |
|
2N6784
MOSFET N-CH 200V 2.25A TO39 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AF Metal Can | MOSFET (Metal Oxide) | TO-39 | 800mW (Ta), 15W (Tc) | N-Channel | — | 200 V | 2.25A (Tc) | 1.5Ohm @ 1.5A, 0V | 4V @ 250µA | 8.6 nC @ 10 V | — | 10V | ±20V | — |
|
2N6784U
MOSFET N-CH 200V 2.25A 18ULCC |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 18-CLCC | MOSFET (Metal Oxide) | 18-ULCC (9.14x7.49) | 800mW (Ta), 15W (Tc) | N-Channel | — | 200 V | 2.25A (Tc) | 1.5Ohm @ 1.5A, 0V | 4V @ 250µA | 8.6 nC @ 10 V | — | 10V | ±20V | — |
|
2N6786
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-205AF Metal Can | MOSFET (Metal Oxide) | TO-205AF (TO-39) | 15W (Tc) | N-Channel | — | 400 V | 1.25A (Tc) | 3.7Ohm @ 1.25A, 10V | 4V @ 250µA | 12 nC @ 10 V | 170 pF @ 25 V | 10V | ±20V | — |
|
2N6787
POWER FIELD-EFFECT TRANSISTOR, N |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
2N6788
MOSFET N-CH 100V 6A TO39 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AF Metal Can | MOSFET (Metal Oxide) | TO-39 | 800mW (Tc) | N-Channel | — | 100 V | 6A (Tc) | 300mOhm @ 3.5A, 10V | 4V @ 250µA | 18 nC @ 10 V | — | 10V | ±20V | — |
|
2N6788U
MOSFET N-CH 100V 4.5A 18ULCC |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 18-CLCC | MOSFET (Metal Oxide) | 18-ULCC (9.14x7.49) | 800mW (Tc) | N-Channel | — | 100 V | 4.5A (Tc) | 300mOhm @ 3.5A, 10V | 4V @ 250µA | 18 nC @ 10 V | — | 10V | ±20V | — |
|
2N6790
MOSFET N-CH 200V 3.5A TO39 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AF Metal Can | MOSFET (Metal Oxide) | TO-39 | 800mW (Tc) | N-Channel | — | 200 V | 3.5A (Tc) | 800mOhm @ 2.25A, 10V | 4V @ 250µA | 14.3 nC @ 10 V | — | 10V | ±20V | — |
|
2N6790U
MOSFET N-CH 200V 2.8A 18ULCC |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 18-CLCC | MOSFET (Metal Oxide) | 18-ULCC (9.14x7.49) | 800mW (Tc) | N-Channel | — | 200 V | 2.8A (Tc) | 800mOhm @ 2.25A, 10V | 4V @ 250µA | 14.3 nC @ 10 V | — | 10V | ±20V | — |
|
2N6792
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-205AF Metal Can | MOSFET (Metal Oxide) | TO-205AF (TO-39) | 20W (Tc) | N-Channel | — | 400 V | 2A (Tc) | 1.8Ohm @ 1.25A, 10V | 4V @ 1mA | — | 600 pF @ 25 V | 10V | ±20V | — |
|
2N6792TX
2A, 400V, 1.8OHM, N-CHANNEL |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-205AF Metal Can | MOSFET (Metal Oxide) | TO-205AF (TO-39) | 20W (Tc) | N-Channel | — | 400 V | 2A (Tc) | 1.8Ohm @ 1.25A, 10V | 4V @ 1mA | — | 600 pF @ 25 V | 10V | ±20V | — |
|
2N6796
MOSFET N-CH 100V 8A TO39 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AF Metal Can | MOSFET (Metal Oxide) | TO-39 | 800mW (Ta), 25W (Tc) | N-Channel | — | 100 V | 8A (Tc) | 180mOhm @ 5A, 10V | 4V @ 250mA | 6.34 nC @ 10 V | — | 10V | ±20V | — |
|
2N6796U
MOSFET N-CH 100V 8A 18ULCC |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 18-CLCC | MOSFET (Metal Oxide) | 18-ULCC (9.14x7.49) | 800mW (Ta), 25W (Tc) | N-Channel | — | 100 V | 8A (Tc) | 180mOhm @ 5A, 10V | 4V @ 250mA | 6.34 nC @ 10 V | — | 10V | ±20V | — |
|
2N6798
MOSFET N-CH 200V 5.5A TO39 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AF Metal Can | MOSFET (Metal Oxide) | TO-39 | 800mW (Ta), 25W (Tc) | N-Channel | — | 200 V | 5.5A (Tc) | 400mOhm @ 3.5A, 10V | 4V @ 250µA | 5.29 nC @ 10 V | — | 10V | ±20V | — |
|
2N6798U
MOSFET N-CH 200V 5.5A 18ULCC |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 18-CLCC | MOSFET (Metal Oxide) | 18-ULCC (9.14x7.49) | 800mW (Ta), 25W (Tc) | N-Channel | — | 200 V | 5.5A (Tc) | 400mOhm @ 3.5A, 10V | 4V @ 250µA | 5.29 nC @ 10 V | — | 10V | ±20V | — |
|
2N6800
MOSFET N-CH 400V 3A TO39 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AF Metal Can | MOSFET (Metal Oxide) | TO-39 | 800mW (Ta), 25W (Tc) | N-Channel | — | 400 V | 3A (Tc) | 1Ohm @ 2A, 10V | 4V @ 250µA | 5.75 nC @ 10 V | — | 10V | ±20V | — |
|
2N6800U
MOSFET N-CH 400V 3A 18ULCC |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 18-CLCC | MOSFET (Metal Oxide) | 18-ULCC (9.14x7.49) | 800mW (Ta), 25W (Tc) | N-Channel | — | 400 V | 3A (Tc) | 1Ohm @ 2A, 10V | 4V @ 250µA | 5.75 nC @ 10 V | — | 10V | ±20V | — |
|
2N6802
MOSFET N-CH 500V 2.5A TO39 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | MOSFET (Metal Oxide) | TO-39 (TO-205AD) | 800mW (Ta), 25W (Tc) | N-Channel | — | 500 V | 2.5A (Tc) | 1.5Ohm @ 1.5A, 10V | 4V @ 250µA | 4.46 nC @ 10 V | — | 10V | ±20V | — |
|
2N6802U
MOSFET N-CH 500V 2.5A 18ULCC |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 18-CLCC | MOSFET (Metal Oxide) | 18-ULCC (9.14x7.49) | 800mW (Ta), 25W (Tc) | N-Channel | — | 500 V | 2.5A (Tc) | 1.5Ohm @ 1.5A, 10V | 4V @ 250µA | 4.46 nC @ 10 V | — | 10V | ±20V | — |
|
2N6804
MOSFET P-CH 100V 11A TO204AA |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | TO-204AA (TO-3) | 4W (Ta), 75W (Tc) | P-Channel | — | 100 V | 11A (Tc) | 360mOhm @ 11A, 10V | 4V @ 250µA | 29 nC @ 10 V | — | 10V | ±20V | — |
|
2N6806
POWER FIELD-EFFECT TRANSISTOR, P |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
2N6847
POWER FIELD-EFFECT TRANSISTOR, P |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
2N6849
MOSFET P-CH 100V 6.5A TO39 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AF Metal Can | MOSFET (Metal Oxide) | TO-39 | 800mW (Ta), 25W (Tc) | P-Channel | — | 100 V | 6.5A (Tc) | 320mOhm @ 6.5A, 10V | 4V @ 250µA | 34.8 nC @ 10 V | — | 10V | ±20V | — |
|
2N6849U
MOSFET P-CH 100V 6.5A 18ULCC |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 18-CLCC | MOSFET (Metal Oxide) | 18-ULCC (9.14x7.49) | 800mW (Ta), 25W (Tc) | P-Channel | — | 100 V | 6.5A (Tc) | 300mOhm @ 4.1A, 10V | 4V @ 250µA | 34.8 nC @ 10 V | — | 10V | ±20V | — |
|
2N6895
P-CHANNEL, MOSFET |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-205AF Metal Can | MOSFET (Metal Oxide) | TO-205AF (TO-39) | 8.33W (Tc) | P-Channel | — | 100 V | 1.16A (Tc) | 3.65Ohm @ 740mA, 10V | 4V @ 250µA | — | 150 pF @ 25 V | 10V | ±20V | — |
|
2N6901
MOSFET N-CH 100V 1.69A TO39 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AF Metal Can | MOSFET (Metal Oxide) | TO-39 | 8.33W (Tc) | N-Channel | — | 100 V | 1.69A (Tc) | 2.6Ohm @ 1.07A, 5V | 2V @ 1mA | 1 nC @ 5 V | — | 5V | ±10V | — |
|
2N7000
MOSFET N-CHANNEL 60V 200MA TO92 |
NTE Electronics, Inc. | Active | — | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | MOSFET (Metal Oxide) | TO-92 | — | N-Channel | — | 60 V | 200mA (Ta) | 5Ohm @ 500mA, 10V | 3V @ 1mA | — | 60 pF @ 25 V | — | — | — |
|
2N7000
MOSFET TO-92 60V 0.2A |
DComponents | Active | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | TO-92 | 350mW (Ta) | N-Channel | — | 60 V | 200mA (Ta) | 5Ohm @ 500mA, 10V | 3V @ 1mA | — | 60 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
2N7000
SMALL SIGNAL FIELD-EFFECT TRANSI |
Rochester Electronics | Active | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | TO-92-3 | 350mW (Ta) | N-Channel | — | 60 V | 350mA (Tc) | 5Ohm @ 500mA, 10V | 3V @ 250µA | 2 nC @ 5 V | 43 pF @ 25 V | 4.5V, 10V | ±18V | — |
|
2N7000
MOSFET N-CH 60V 350MA TO92-3 |
STMicroelectronics | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | TO-92-3 | 1W (Tc) | N-Channel | — | 60 V | 350mA (Tc) | 5Ohm @ 500mA, 10V | 3V @ 250µA | 2 nC @ 5 V | 43 pF @ 25 V | 4.5V, 10V | ±18V | — |
|
2N7000,126
MOSFET N-CH 60V 300MA TO92-3 |
NXP Semiconductors | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | MOSFET (Metal Oxide) | TO-92-3 | 830mW (Ta) | N-Channel | — | 60 V | 300mA (Tc) | 5Ohm @ 500mA, 10V | 2V @ 1mA | — | 40 pF @ 10 V | 4.5V, 10V | ±30V | — |
|
2N7000-AP
MOSFET N-CH 60V 200MA TO92 |
Micro Commercial Components (MCC) | Obsolete | -55°C ~ 150°C | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | MOSFET (Metal Oxide) | TO-92 | 625mW (Ta) | N-Channel | — | 60 V | 220mA (Ta) | 5Ohm @ 500mA, 10V | 3V @ 1mA | — | 60 pF @ 25 V | 10V | ±20V | — |
|
2N7000-D26Z
MOSFET N-CH 60V 200MA TO92-3 |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | MOSFET (Metal Oxide) | TO-92-3 | 400mW (Ta) | N-Channel | — | 60 V | 200mA (Ta) | 5Ohm @ 500mA, 10V | 3V @ 1mA | — | 50 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
2N7000-D26Z
SMALL SIGNAL FIELD-EFFECT TRANSI |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | MOSFET (Metal Oxide) | TO-92-3 | 400mW (Ta) | N-Channel | — | 60 V | 200mA (Ta) | 5Ohm @ 500mA, 10V | 3V @ 1mA | — | 50 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
2N7000-D74Z
MOSFET N-CH 60V 200MA TO92-3 |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | MOSFET (Metal Oxide) | TO-92-3 | 400mW (Ta) | N-Channel | — | 60 V | 200mA (Ta) | 5Ohm @ 500mA, 10V | 3V @ 1mA | — | 50 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
2N7000-D75Z
MOSFET N-CH 60V 200MA TO92-3 |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | MOSFET (Metal Oxide) | TO-92-3 | 400mW (Ta) | N-Channel | — | 60 V | 200mA (Ta) | 5Ohm @ 500mA, 10V | 3V @ 1mA | — | 50 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
2N7000-G
MOSFET N-CH 60V 200MA TO92-3 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | TO-92-3 | 1W (Tc) | N-Channel | — | 60 V | 200mA (Tj) | 5Ohm @ 500mA, 10V | 3V @ 1mA | — | 60 pF @ 25 V | 4.5V, 10V | ±30V | — |
|
2N7000BU
MOSFET N-CH 60V 200MA TO92-3 |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | TO-92-3 | 400mW (Ta) | N-Channel | — | 60 V | 200mA (Tc) | 5Ohm @ 500mA, 10V | 3V @ 1mA | — | 50 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
2N7000BU
MOSFET N-CH 60V 200MA TO92-3 |
Rochester Electronics | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | TO-92-3 | 400mW (Ta) | N-Channel | — | 60 V | 200mA (Tc) | 5Ohm @ 500mA, 10V | 3V @ 1mA | — | 50 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
2N7000BU_T
MOSFET N-CH 60V 200MA TO92-3 |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | TO-92-3 | 400mW (Ta) | N-Channel | — | 60 V | 200mA (Tc) | 5Ohm @ 500mA, 10V | 3V @ 1mA | — | 50 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
2N7000G
MOSFET N-CH 60V 200MA TO92-3 |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | MOSFET (Metal Oxide) | TO-92 (TO-226) | 350mW (Tc) | N-Channel | — | 60 V | 200mA (Ta) | 5Ohm @ 500mA, 10V | 3V @ 1mA | — | 60 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
2N7000RLRA
MOSFET N-CH 60V 200MA TO92-3 |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body (Formed Leads) | MOSFET (Metal Oxide) | TO-92 (TO-226) | 350mW (Tc) | N-Channel | — | 60 V | 200mA (Ta) | 5Ohm @ 500mA, 10V | 3V @ 1mA | — | 60 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
2N7000RLRAG
MOSFET N-CH 60V 200MA TO92-3 |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body (Formed Leads) | MOSFET (Metal Oxide) | TO-92 (TO-226) | 350mW (Tc) | N-Channel | — | 60 V | 200mA (Ta) | 5Ohm @ 500mA, 10V | 3V @ 1mA | — | 60 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
2N7000RLRMG
MOSFET N-CH 60V 200MA TO92-3 |
Rochester Electronics | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body (Formed Leads) | MOSFET (Metal Oxide) | TO-92 (TO-226) | 350mW (Tc) | N-Channel | — | 60 V | 200mA (Ta) | 5Ohm @ 500mA, 10V | 3V @ 1mA | — | 60 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
2N7000RLRPG
MOSFET N-CH 60V 200MA TO92-3 |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body (Formed Leads) | MOSFET (Metal Oxide) | TO-92 (TO-226) | 350mW (Tc) | N-Channel | — | 60 V | 200mA (Ta) | 5Ohm @ 500mA, 10V | 3V @ 1mA | — | 60 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
2N7000TA
MOSFET N-CH 60V 200MA TO92-3 |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | MOSFET (Metal Oxide) | TO-92-3 | 400mW (Ta) | N-Channel | — | 60 V | 200mA (Tc) | 5Ohm @ 500mA, 10V | 3V @ 1mA | — | 50 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
2N7002
MOSFET N-CHANNEL 60V 115MA SOT23 |
NTE Electronics, Inc. | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | SOT-23-3 | 200mW (Ta) | N-Channel | — | 60 V | 115mA (Ta) | 7.5Ohm @ 500mA, 10V | 2.5V @ 250µA | — | 50 pF @ 25 V | 5V, 10V | ±20V | — |
|
2N7002
MOSFET N-CH 60V 280MA SOT23-3 |
DComponents | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | SOT-23-3 (TO-236) | 350mW (Ta) | N-Channel | — | 60 V | 280mA (Ta) | 5Ohm @ 500mA, 10V | 2.5V @ 250µA | — | 50 pF @ 25 V | 5V, 10V | ±30V | — |
|
2N7002
MOSFET N-CH 60V 115MA SOT-23 |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | SOT-23-3 | 200mW (Ta) | N-Channel | — | 60 V | 115mA (Ta) | 7.5Ohm @ 500mA, 10V | 2.5V @ 250µA | — | 50 pF @ 25 V | 5V, 10V | ±20V | — |