Transistörler - FET, MOSFET - Tekil
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Komponentler
10,000 sonuç · Sayfa 173/200| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FCD4N60TM_WS
MOSFET N-CH 600V 3.9A DPAK |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252AA | 50W (Tc) | N-Channel | — | 600 V | 3.9A (Tc) | 1.2Ohm @ 2A, 10V | 5V @ 250µA | 16.6 nC @ 10 V | 540 pF @ 25 V | 10V | ±30V | — |
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FCD5N60-F085
FCD5N60_F085 - N-CHANNEL SUPERFE |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252AA | 54W (Tj) | N-Channel | — | 600 V | 4.6A (Tc) | 1.1Ohm @ 4.6A, 10V | 5V @ 250µA | 21 nC @ 10 V | 570 pF @ 25 V | 10V | ±30V | — |
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FCD5N60-F085
MOSFET N-CH 600V 4.6A DPAK |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252AA | 54W (Tj) | N-Channel | — | 600 V | 4.6A (Tc) | 1.1Ohm @ 4.6A, 10V | 5V @ 250µA | 21 nC @ 10 V | 570 pF @ 25 V | 10V | ±30V | — |
|
FCD5N60TF
MOSFET N-CH 600V 4.6A DPAK |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252AA | 54W (Tc) | N-Channel | — | 600 V | 4.6A (Tc) | 950mOhm @ 2.3A, 10V | 5V @ 250µA | 16 nC @ 10 V | 600 pF @ 25 V | 10V | ±30V | — |
|
FCD5N60TM
MOSFET N-CH 600V 4.6A DPAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252AA | 54W (Tc) | N-Channel | — | 600 V | 4.6A (Tc) | 950mOhm @ 2.3A, 10V | 5V @ 250µA | 16 nC @ 10 V | 600 pF @ 25 V | 10V | ±30V | — |
|
FCD5N60TM-WS
MOSFET N-CH 600V 4.6A DPAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252AA | 54W (Tc) | N-Channel | — | 600 V | 4.6A (Tc) | 950mOhm @ 2.3A, 10V | 5V @ 250µA | 16 nC @ 10 V | 600 pF @ 25 V | 10V | ±30V | — |
|
FCD600N60Z
MOSFET N-CH 600V 7.4A DPAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252AA | 89W (Tc) | N-Channel | — | 600 V | 7.4A (Tc) | 600mOhm @ 3.7A, 10V | 3.5V @ 250µA | 26 nC @ 10 V | 1120 pF @ 25 V | 10V | ±20V | — |
|
FCD600N65S3R0
MOSFET N-CH 650V 6A DPAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | D-PAK (TO-252) | 54W (Tc) | N-Channel | — | 650 V | 6A (Tc) | 600mOhm @ 3A, 10V | 4.5V @ 600µA | 11 nC @ 10 V | 465 pF @ 400 V | 10V | ±30V | — |
|
FCD620N60ZF
MOSFET N-CH 600V 7.3A DPAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252AA | 89W (Tc) | N-Channel | — | 600 V | 7.3A (Tc) | 620mOhm @ 3.6A, 10V | 5V @ 250µA | 36 nC @ 10 V | 1135 pF @ 25 V | 10V | ±20V | — |
|
FCD620N60ZF
POWER FIELD-EFFECT TRANSISTOR, 7 |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252, (D-Pak) | 89W (Tc) | N-Channel | — | 600 V | 7.3A (Tc) | 620mOhm @ 3.6A, 10V | 5V @ 250µA | 36 nC @ 10 V | 1135 pF @ 25 V | 10V | ±20V | — |
|
FCD7N60TF
MOSFET N-CH 600V 7A DPAK |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252AA | 83W (Tc) | N-Channel | — | 600 V | 7A (Tc) | 600mOhm @ 3.5A, 10V | 5V @ 250µA | 30 nC @ 10 V | 920 pF @ 25 V | 10V | ±30V | — |
|
FCD7N60TM
MOSFET N-CH 600V 7A DPAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252AA | 83W (Tc) | N-Channel | — | 600 V | 7A (Tc) | 600mOhm @ 3.5A, 10V | 5V @ 250µA | 30 nC @ 10 V | 920 pF @ 25 V | 10V | ±30V | — |
|
FCD7N60TM-WS
MOSFET N-CH 600V 7A DPAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252AA | 83W (Tc) | N-Channel | — | 600 V | 7A (Tc) | 600mOhm @ 3.5A, 10V | 5V @ 250µA | 30 nC @ 10 V | 920 pF @ 25 V | 10V | ±30V | — |
|
FCD850N80Z
MOSFET N-CH 800V 6A DPAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252AA | 75W (Tc) | N-Channel | — | 800 V | 6A (Tc) | 850mOhm @ 3A, 10V | 4.5V @ 600µA | 29 nC @ 10 V | 1315 pF @ 100 V | 10V | ±20V | — |
|
FCD900N60Z
MOSFET N-CH 600V 4.5A TO252 |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252AA | 52W (Tc) | N-Channel | — | 600 V | 4.5A (Tc) | 900mOhm @ 2.3A, 10V | 3.5V @ 250µA | 17 nC @ 10 V | 720 pF @ 25 V | 10V | ±20V | — |
|
FCD9N60NTM
MOSFET N-CH 600V 9A DPAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252AA | 92.6W (Tc) | N-Channel | — | 600 V | 9A (Tc) | 385mOhm @ 4.5A, 10V | 5V @ 250µA | 17.8 nC @ 10 V | 1000 pF @ 100 V | 10V | ±30V | — |
|
FCH023N65S3-F155
MOSFET N-CH 650V 75A TO247 |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 595W (Tc) | N-Channel | Super Junction | 650 V | 75A (Tc) | 23mOhm @ 37.5A, 10V | 4.5V @ 7.5mA | 222 nC @ 10 V | 7160 pF @ 400 V | 10V | ±30V | — |
|
FCH023N65S3L4
MOSFET N-CH 650V 75A TO247 |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | MOSFET (Metal Oxide) | TO-247 | 595W (Tc) | N-Channel | — | 650 V | 75A (Tc) | 23mOhm @ 37.5A, 10V | 4.5V @ 7.5mA | 222 nC @ 10 V | 7160 pF @ 400 V | 10V | ±30V | — |
|
FCH029N65S3-F155
MOSFET N-CH 650V 75A TO247-3 |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 463W (Tc) | N-Channel | — | 650 V | 75A (Tc) | 29mOhm @ 37.5A, 10V | 4.5V @ 7mA | 201 nC @ 10 V | 6340 pF @ 400 V | — | ±30V | — |
|
FCH040N65S3-F155
MOSFET N-CH 650V 65A TO247-3 |
Rochester Electronics | Active | -55°C ~ 150°C | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 417W (Tc) | N-Channel | — | 650 V | 65A (Tc) | 40mOhm @ 32.5A, 10V | 4.5V @ 6.5mA | 136 nC @ 10 V | 4740 pF @ 400 V | 10V | ±30V | — |
|
FCH041N60E
MOSFET N-CH 600V 77A TO247-3 |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 592W (Tc) | N-Channel | — | 600 V | 77A (Tc) | 41mOhm @ 39A, 10V | 3.5V @ 250µA | 380 nC @ 10 V | 13700 pF @ 100 V | 10V | ±20V | — |
|
FCH041N60F
MOSFET N-CH 600V 76A TO247-3 |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 595W (Tc) | N-Channel | — | 600 V | 76A (Tc) | 41mOhm @ 38A, 10V | 5V @ 250µA | 360 nC @ 10 V | 14365 pF @ 100 V | 10V | ±20V | — |
|
FCH041N60F
POWER FIELD-EFFECT TRANSISTOR, 7 |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 595W (Tc) | N-Channel | — | 600 V | 76A (Tc) | 41mOhm @ 38A, 10V | 5V @ 250µA | 360 nC @ 10 V | 14365 pF @ 100 V | 10V | ±20V | — |
|
FCH041N60F-F085
MOSFET N-CH 600V 76A TO247-3 |
Rochester Electronics | Not For New Designs | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 595W (Tc) | N-Channel | — | 600 V | 76A (Tc) | 41mOhm @ 38A, 10V | 5V @ 250µA | 347 nC @ 10 V | 10900 pF @ 25 V | 10V | ±20V | — |
|
FCH041N65EF-F155
MOSFET N-CH 650V 76A TO247 |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 595W (Tc) | N-Channel | Super Junction | 650 V | 76A (Tc) | 41mOhm @ 38A, 10V | 5V @ 7.6mA | 298 nC @ 10 V | 12560 pF @ 100 V | 10V | ±20V | — |
|
FCH041N65EFL4
POWER FIELD-EFFECT TRANSISTOR, N |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | MOSFET (Metal Oxide) | TO-247 | 595W (Tc) | N-Channel | — | 650 V | 76A (Tc) | 41mOhm @ 38A, 10V | 5V @ 7.6mA | 298 nC @ 10 V | 12560 pF @ 100 V | 10V | ±20V | — |
|
FCH041N65EFL4
MOSFET N-CH 650V 76A TO247 |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | MOSFET (Metal Oxide) | TO-247 | 595W (Tc) | N-Channel | — | 650 V | 76A (Tc) | 41mOhm @ 38A, 10V | 5V @ 7.6mA | 298 nC @ 10 V | 12560 pF @ 100 V | 10V | ±20V | — |
|
FCH041N65F-F085
MOSFET N-CH 650V 76A TO247-3 |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 | 595W (Tc) | N-Channel | — | 650 V | 76A (Tc) | 41mOhm @ 38A, 10V | 5V @ 250µA | 304 nC @ 10 V | 13566 pF @ 25 V | 10V | ±20V | — |
|
FCH041N65F-F085
MOSFET N-CH 650V 76A TO247-3 |
onsemi | Not For New Designs | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 595W (Tc) | N-Channel | — | 650 V | 76A (Tc) | 41mOhm @ 38A, 10V | 5V @ 250µA | 304 nC @ 10 V | 13566 pF @ 25 V | 10V | ±20V | — |
|
FCH041N65F-F155
MOSFET N-CH 650V 76A TO247 |
onsemi | Last Time Buy | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 595W (Tc) | N-Channel | — | 650 V | 76A (Tc) | 41mOhm @ 38A, 10V | 5V @ 7.6mA | 294 nC @ 10 V | 13020 pF @ 100 V | 10V | ±20V | — |
|
FCH043N60
MOSFET N-CH 600V 75A TO247-3 |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 592W (Tc) | N-Channel | — | 600 V | 75A (Tc) | 43mOhm @ 38A, 10V | 3.5V @ 250µA | 215 nC @ 10 V | 12225 pF @ 400 V | 10V | ±20V | — |
|
FCH060N80-F155
MOSFET N-CH 800V 56A TO247 |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 500W (Tc) | N-Channel | Super Junction | 800 V | 56A (Tc) | 60mOhm @ 29A, 10V | 4.5V @ 5.8mA | 350 nC @ 10 V | 14685 pF @ 100 V | 10V | ±20V | — |
|
FCH060N80-F155
MOSFET N-CH 800V 56A TO247 |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 500W (Tc) | N-Channel | Super Junction | 800 V | 56A (Tc) | 60mOhm @ 29A, 10V | 4.5V @ 5.8mA | 350 nC @ 10 V | 14685 pF @ 100 V | 10V | ±20V | — |
|
FCH067N65S3-F155
MOSFET N-CH 650V 44A TO247 |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 312W (Tc) | N-Channel | Super Junction | 650 V | 44A (Tc) | 67mOhm @ 22A, 10V | 4.5V @ 4.4mA | 78 nC @ 10 V | 3090 pF @ 400 V | 10V | ±30V | — |
|
FCH067N65S3-F155
POWER FIELD-EFFECT TRANSISTOR, N |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 312W (Tc) | N-Channel | Super Junction | 650 V | 44A (Tc) | 67mOhm @ 22A, 10V | 4.5V @ 4.4mA | 78 nC @ 10 V | 3090 pF @ 400 V | 10V | ±30V | — |
|
FCH070N60E
MOSFET N-CH 600V 52A TO247 |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 481W (Tc) | N-Channel | — | 600 V | 52A (Tc) | 70mOhm @ 26A, 10V | 3.5V @ 250µA | 166 nC @ 10 V | 4925 pF @ 380 V | 10V | ±20V | — |
|
FCH072N60
MOSFET N-CH 600V 52A TO247-3 |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 481W (Tc) | N-Channel | — | 600 V | 52A (Tc) | 72mOhm @ 26A, 10V | 3.5V @ 250µA | 125 nC @ 10 V | 5890 pF @ 380 V | 10V | ±20V | — |
|
FCH072N60F
MOSFET N-CH 600V 52A TO247-3 |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 481W (Tc) | N-Channel | — | 600 V | 52A (Tc) | 72mOhm @ 26A, 10V | 5V @ 250µA | 215 nC @ 10 V | 8660 pF @ 100 V | 10V | ±20V | — |
|
FCH072N60F-F085
MOSFET N-CH 600V 52A TO247-3 |
onsemi | Last Time Buy | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 481W (Tc) | N-Channel | — | 600 V | 52A (Tc) | 72mOhm @ 26A, 10V | 5V @ 250µA | 210 nC @ 10 V | 6330 pF @ 100 V | 10V | ±20V | — |
|
FCH077N65F-F085
MOSFET N-CH 650V 54A TO247-3 |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 | 481W (Tc) | N-Channel | — | 650 V | 54A (Tc) | 77mOhm @ 27A, 10V | 5V @ 250µA | 164 nC @ 10 V | 7162 pF @ 25 V | 10V | ±20V | — |
|
FCH077N65F-F085
MOSFET N-CH 650V 54A TO247-3 |
onsemi | Not For New Designs | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 481W (Tc) | N-Channel | — | 650 V | 54A (Tc) | 77mOhm @ 27A, 10V | 5V @ 250µA | 164 nC @ 10 V | 7162 pF @ 25 V | 10V | ±20V | — |
|
FCH077N65F-F155
MOSFET N-CH 650V 54A TO247 |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 481W (Tc) | N-Channel | — | 650 V | 54A (Tc) | 77mOhm @ 27A, 10V | 5V @ 5.4mA | 164 nC @ 10 V | 7109 pF @ 100 V | 10V | ±20V | — |
|
FCH077N65F-F155
MOSFET N-CH 650V 54A TO247 |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 481W (Tc) | N-Channel | — | 650 V | 54A (Tc) | 77mOhm @ 27A, 10V | 5V @ 5.4mA | 164 nC @ 10 V | 7109 pF @ 100 V | 10V | ±20V | — |
|
FCH085N80-F155
MOSFET N-CH 800V 46A TO247 |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 446W (Tc) | N-Channel | Super Junction | 800 V | 46A (Tc) | 85mOhm @ 23A, 10V | 4.5V @ 4.6mA | 255 nC @ 10 V | 10825 pF @ 100 V | 10V | ±20V | — |
|
FCH085N80-F155
MOSFET N-CH 800V 46A TO247 |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 446W (Tc) | N-Channel | Super Junction | 800 V | 46A (Tc) | 85mOhm @ 23A, 10V | 4.5V @ 4.6mA | 255 nC @ 10 V | 10825 pF @ 100 V | 10V | ±20V | — |
|
FCH099N60E
MOSFET N-CH 600V 37A TO247-3 |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 357W (Tc) | N-Channel | — | 600 V | 37A (Tc) | 99mOhm @ 18.5A, 10V | 3.5V @ 250µA | 114 nC @ 10 V | 3465 pF @ 380 V | 10V | ±20V | — |
|
FCH099N65S3-F155
MOSFET N-CH 650V 30A TO247-3 |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 227W (Tc) | N-Channel | — | 650 V | 30A (Tc) | 99mOhm @ 15A, 10V | 4.5V @ 3mA | 61 nC @ 10 V | 2480 pF @ 400 V | 10V | ±30V | — |
|
FCH104N60
MOSFET N-CH 600V 37A TO247-3 |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 357W (Tc) | N-Channel | — | 600 V | 37A (Tc) | 104mOhm @ 18.5A, 10V | 3.5V @ 250µA | 82 nC @ 10 V | 4165 pF @ 380 V | 10V | ±20V | — |
|
FCH104N60F
MOSFET N-CH 600V 37A TO247-3 |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 357W (Tc) | N-Channel | — | 600 V | 37A (Tc) | 104mOhm @ 18.5A, 10V | 5V @ 250µA | 139 nC @ 10 V | 5950 pF @ 100 V | 10V | ±20V | — |
|
FCH104N60F-F085
MOSFET N-CH 600V 37A TO247-3 |
onsemi | Not For New Designs | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 357W (Tc) | N-Channel | — | 600 V | 37A (Tc) | 104mOhm @ 18.5A, 10V | 5V @ 250µA | 139 nC @ 10 V | 4302 pF @ 100 V | 10V | ±20V | — |