Transistörler - FET, MOSFET - Tekil
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Komponentler
10,000 sonuç · Sayfa 172/200| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FB180SA10
MOSFET N-CH 100V 180A SOT-227 |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | SOT-227 | 480W (Tc) | N-Channel | — | 100 V | 180A (Tc) | 6.5mOhm @ 108A, 10V | 4V @ 250µA | 380 nC @ 10 V | 10700 pF @ 25 V | 10V | ±20V | — |
|
FBG04N08AC
GAN FET HEMT 40V 8A COTS 4FSMD-A |
EPC Space | Active | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, No Lead | GaNFET (Gallium Nitride) | 4-SMD | — | N-Channel | — | 40 V | 8A (Tc) | 24mOhm @ 8A, 5V | 2.5V @ 2mA | 2.8 nC @ 5 V | 312 pF @ 20 V | 5V | +6V, -4V | — |
|
FBG04N30BC
GAN FET HEMT 40V30A COTS 4FSMD-B |
EPC Space | Active | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, No Lead | GaNFET (Gallium Nitride) | 4-SMD | — | N-Channel | — | 40 V | 30A (Tc) | 6mOhm @ 30A, 5V | 2.5V @ 9mA | 11.4 nC @ 5 V | 1300 pF @ 20 V | 5V | +6V, -4V | — |
|
FBG10N05AC
GAN FET HEMT 100V5A COTS 4FSMD-A |
EPC Space | Active | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, No Lead | GaNFET (Gallium Nitride) | 4-SMD | — | N-Channel | — | 100 V | 5A (Tc) | 44mOhm @ 5A, 5V | 2.5V @ 1.2mA | 2.2 nC @ 5 V | 233 pF @ 50 V | 5V | +6V, -4V | — |
|
FBG10N30BC
GAN FET HEMT100V30A COTS 4FSMD-B |
EPC Space | Active | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, No Lead | GaNFET (Gallium Nitride) | 4-SMD | — | N-Channel | — | 100 V | 30A (Tc) | 9mOhm @ 30A, 5V | 2.5V @ 5mA | 11 nC @ 5 V | 1000 pF @ 50 V | 5V | +6V, -4V | — |
|
FBG20N18BC
GAN FET HEMT200V18A COTS 4FSMD-B |
EPC Space | Active | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, No Lead | GaNFET (Gallium Nitride) | 4-SMD | — | N-Channel | — | 200 V | 18A (Tc) | 26mOhm @ 18A, 5V | 2.5V @ 3mA | 6 nC @ 5 V | 900 pF @ 100 V | 5V | +6V, -4V | — |
|
FBG30N04CC
GAN FET HEMT 300V4A COTS 4FSMD-C |
EPC Space | Active | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, No Lead | GaNFET (Gallium Nitride) | 4-SMD | — | N-Channel | — | 300 V | 4A (Tc) | 404mOhm @ 4A, 5V | 2.8V @ 600µA | 2.6 nC @ 5 V | 450 pF @ 150 V | 5V | +6V, -4V | — |
|
FCA16N60
MOSFET N-CH 600V 16A TO3PN |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 167W (Tc) | N-Channel | — | 600 V | 16A (Tc) | 260mOhm @ 8A, 10V | 5V @ 250µA | 70 nC @ 10 V | 2250 pF @ 25 V | 10V | ±30V | — |
|
FCA16N60_F109
MOSFET N-CH 600V 16A TO3PN |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 167W (Tc) | N-Channel | — | 600 V | 16A (Tc) | 260mOhm @ 8A, 10V | 5V @ 250µA | 70 nC @ 10 V | 2250 pF @ 25 V | 10V | ±30V | — |
|
FCA16N60N
MOSFET N-CH 600V TO-3PN |
onsemi | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
FCA20N60
20A, 600V, 0.19OHM, N-CHANNEL, |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 208W (Tc) | N-Channel | — | 600 V | 20A (Tc) | 190mOhm @ 10A, 10V | 5V @ 250µA | 98 nC @ 10 V | 3080 pF @ 25 V | 10V | ±30V | — |
|
FCA20N60
MOSFET N-CH 600V 20A TO3PN |
onsemi | Not For New Designs | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 208W (Tc) | N-Channel | — | 600 V | 20A (Tc) | 190mOhm @ 10A, 10V | 5V @ 250µA | 98 nC @ 10 V | 3080 pF @ 25 V | 10V | ±30V | — |
|
FCA20N60-F109
DISCRETE MOSFET |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 208W (Tc) | N-Channel | — | 600 V | 20A (Tc) | 190mOhm @ 10A, 10V | 5V @ 250µA | 98 nC @ 10 V | 3080 pF @ 25 V | 10V | ±30V | — |
|
FCA20N60-F109
MOSFET N-CH 600V 20A TO3PN |
onsemi | Not For New Designs | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 208W (Tc) | N-Channel | — | 600 V | 20A (Tc) | 190mOhm @ 10A, 10V | 5V @ 250µA | 98 nC @ 10 V | 3080 pF @ 25 V | 10V | ±30V | — |
|
FCA20N60F
MOSFET N-CH 600V 20A TO3PN |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 208W (Tc) | N-Channel | — | 600 V | 20A (Tc) | 190mOhm @ 10A, 10V | 5V @ 250µA | 98 nC @ 10 V | 3080 pF @ 25 V | 10V | ±30V | — |
|
FCA20N60FS
MOSFET N-CH 600V 20A TO3PN |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 208W (Tc) | N-Channel | — | 600 V | 20A (Tc) | 190mOhm @ 10A, 10V | 5V @ 250µA | 98 nC @ 10 V | 3080 pF @ 25 V | 10V | ±30V | — |
|
FCA22N60N
MOSFET N-CH 600V 22A TO3PN |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 205W (Tc) | N-Channel | — | 600 V | 22A (Tc) | 165mOhm @ 11A, 10V | 4V @ 250µA | 45 nC @ 10 V | 1950 pF @ 100 V | 10V | ±30V | — |
|
FCA35N60
MOSFET N-CH 600V 35A TO3PN |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 312.5W (Tc) | N-Channel | — | 600 V | 35A (Tc) | 98mOhm @ 17.5A, 10V | 5V @ 250µA | 181 nC @ 10 V | 6640 pF @ 25 V | 10V | ±30V | — |
|
FCA36N60NF
MOSFET N-CH 600V 34.9A TO3PN |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 312W (Tc) | N-Channel | — | 600 V | 34.9A (Tc) | 95mOhm @ 18A, 10V | 5V @ 250µA | 112 nC @ 10 V | 4245 pF @ 100 V | 10V | ±30V | — |
|
FCA47N60
MOSFET N-CH 600V 47A TO3PN |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 417W (Tc) | N-Channel | — | 600 V | 47A (Tc) | 70mOhm @ 23.5A, 10V | 5V @ 250µA | 270 nC @ 10 V | 8000 pF @ 25 V | 10V | ±30V | — |
|
FCA47N60-F109
MOSFET N-CH 600V 47A TO3PN |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 417W (Tc) | N-Channel | — | 600 V | 47A (Tc) | 70mOhm @ 23.5A, 10V | 5V @ 250µA | 270 nC @ 10 V | 8000 pF @ 25 V | 10V | ±30V | — |
|
FCA47N60F
MOSFET N-CH 600V 47A TO3PN |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 417W (Tc) | N-Channel | — | 600 V | 47A (Tc) | 73mOhm @ 23.5A, 10V | 5V @ 250µA | 270 nC @ 10 V | 8000 pF @ 25 V | 10V | ±30V | — |
|
FCA47N60F_SN00171
MOSFET N-CH 600V 47A TO3PN |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 417W | N-Channel | — | 600 V | 47A (Tc) | 73mOhm @ 23.5A, 10V | 5V @ 250µA | 270 nC @ 10 V | 8000 pF @ 25 V | 10V | ±30V | — |
|
FCA76N60N
MOSFET N-CH 600V 76A TO3PN |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 543W (Tc) | N-Channel | — | 600 V | 76A (Tc) | 36mOhm @ 38A, 10V | 4V @ 250µA | 285 nC @ 10 V | 12385 pF @ 100 V | 10V | ±30V | — |
|
FCB070N65S3
MOSFET N-CH 650V 44A D2PAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D²PAK (TO-263) | 312W (Tc) | N-Channel | — | 650 V | 44A (Tc) | 70mOhm @ 22A, 10V | 4.5V @ 4.4mA | 78 nC @ 10 V | 3090 pF @ 400 V | 10V | ±30V | — |
|
FCB099N65S3
MOSFET N-CH 650V 30A D2PAK-3 |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D²PAK-3 (TO-263-3) | 227W (Tc) | N-Channel | — | 650 V | 30A (Tc) | 99mOhm @ 15A, 10V | 4.5V @ 740µA | 61 nC @ 10 V | 2480 pF @ 400 V | 10V | ±30V | — |
|
FCB110N65F
MOSFET N-CH 650V 35A D2PAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D²PAK (TO-263) | 357W (Tc) | N-Channel | — | 650 V | 35A (Tc) | 110mOhm @ 17.5A, 10V | 5V @ 3.5mA | 145 nC @ 10 V | 4895 pF @ 100 V | 10V | ±20V | — |
|
FCB11N60FTM
MOSFET N-CH 600V 11A D2PAK |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D²PAK (TO-263) | 125W (Tc) | N-Channel | — | 600 V | 11A (Tc) | 380mOhm @ 5.5A, 10V | 5V @ 250µA | 52 nC @ 10 V | 1490 pF @ 25 V | 10V | ±30V | — |
|
FCB11N60TM
MOSFET N-CH 600V 11A D2PAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D²PAK (TO-263) | 125W (Tc) | N-Channel | — | 600 V | 11A (Tc) | 380mOhm @ 5.5A, 10V | 5V @ 250µA | 52 nC @ 10 V | 1490 pF @ 25 V | 10V | ±30V | — |
|
FCB125N65S3
MOSFET N-CH 650V 24A TO263 |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D²PAK-3 (TO-263-3) | 181W (Tc) | N-Channel | — | 650 V | 24A (Tc) | 125mOhm @ 12A, 10V | 4.5V @ 590µA | 46 nC @ 10 V | 1940 pF @ 400 V | 10V | ±30V | — |
|
FCB199N65S3
MOSFET N-CH 650V 14A D2PAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D²PAK (TO-263) | 98W (Tc) | N-Channel | — | 650 V | 14A (Tc) | 199mOhm @ 7A, 10V | 4.5V @ 1.4mA | 30 nC @ 10 V | 1225 pF @ 400 V | 10V | ±30V | — |
|
FCB20N60-F085
MOSFET N-CH 600V 20A D2PAK |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK (TO-263) | 341W (Tc) | N-Channel | — | 600 V | 20A (Tc) | 198mOhm @ 20A, 10V | 5V @ 250µA | 102 nC @ 10 V | 3080 pF @ 25 V | — | ±30V | — |
|
FCB20N60-F085
MOSFET N-CH 600V 20A TO263AB |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D²PAK (TO-263) | 341W (Tc) | N-Channel | — | 600 V | 20A (Tc) | 198mOhm @ 20A, 10V | 5V @ 250µA | 102 nC @ 10 V | 3080 pF @ 25 V | 10V | ±30V | — |
|
FCB20N60F-F085
MOSFET N-CH 600V 20A TO263AB |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D²PAK (TO-263) | 405W (Tc) | N-Channel | — | 600 V | 20A (Tc) | 195mOhm @ 20A, 10V | 5V @ 250µA | 102 nC @ 10 V | 2035 pF @ 25 V | 10V | ±30V | — |
|
FCB20N60FTM
MOSFET N-CH 600V 20A D2PAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D²PAK (TO-263) | 208W (Tc) | N-Channel | — | 600 V | 20A (Tc) | 190mOhm @ 10A, 10V | 5V @ 250µA | 98 nC @ 10 V | 3080 pF @ 25 V | 10V | ±30V | — |
|
FCB20N60TM
MOSFET N-CH 600V 20A D2PAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D²PAK (TO-263) | 208W (Tc) | N-Channel | — | 600 V | 20A (Tc) | 190mOhm @ 10A, 10V | 5V @ 250µA | 98 nC @ 10 V | 3080 pF @ 25 V | 10V | ±30V | — |
|
FCB20N60TM
FCB20N60 - N-CHANNEL, SUPERFET, |
Rochester Electronics | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
FCB260N65S3
MOSFET N-CH 650V 12A D2PAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D²PAK (TO-263) | 90W (Tc) | N-Channel | — | 650 V | 12A (Tc) | 260mOhm @ 6A, 10V | 4.5V @ 1.2mA | 24 nC @ 10 V | 1010 pF @ 400 V | 10V | ±30V | — |
|
FCB290N80
MOSFET N-CH 800V 17A D2PAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D²PAK (TO-263) | 212W (Tc) | N-Channel | — | 800 V | 17A (Tc) | 290mOhm @ 8.5A, 10V | 4.5V @ 1.7mA | 75 nC @ 10 V | 3205 pF @ 100 V | 10V | ±20V | — |
|
FCB36N60NTM
MOSFET N-CH 600V 36A D2PAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D²PAK (TO-263) | 312W (Tc) | N-Channel | — | 600 V | 36A (Tc) | 90mOhm @ 18A, 10V | 4V @ 250µA | 112 nC @ 10 V | 4785 pF @ 100 V | 10V | ±30V | — |
|
FCB36N60NTM
POWER MOSFET, N-CHANNEL, SUPREMO |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D²PAK (TO-263) | 312W (Tc) | N-Channel | — | 600 V | 36A (Tc) | 90mOhm @ 18A, 10V | 4V @ 250µA | 112 nC @ 10 V | 4785 pF @ 100 V | 10V | ±30V | — |
|
FCD1300N80Z
MOSFET N-CH 800V 4A DPAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252AA | 52W (Tc) | N-Channel | — | 800 V | 4A (Tc) | 1.3Ohm @ 2A, 10V | 4.5V @ 400µA | 21 nC @ 10 V | 880 pF @ 100 V | 10V | ±20V | — |
|
FCD2250N80Z
MOSFET N-CH 800V 2.6A DPAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252AA | 39W (Tc) | N-Channel | — | 800 V | 2.6A (Tc) | 2.25Ohm @ 1.3A, 10V | 4.5V @ 260µA | 14 nC @ 10 V | 585 pF @ 100 V | 10V | ±20V | — |
|
FCD260N65S3
MOSFET N-CH 650V 12A TO252 |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252AA | 90W (Tc) | N-Channel | — | 650 V | 12A (Tc) | 260mOhm @ 6A, 10V | 4.5V @ 1.2mA | 24 nC @ 10 V | 1010 pF @ 400 V | 10V | ±30V | — |
|
FCD3400N80Z
MOSFET N-CH 800V 2A DPAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252AA | 32W (Tc) | N-Channel | — | 800 V | 2A (Tc) | 3.4Ohm @ 1A, 10V | 4.5V @ 200µA | 9.6 nC @ 10 V | 400 pF @ 100 V | 10V | ±20V | — |
|
FCD3400N80Z
POWER FIELD-EFFECT TRANSISTOR, N |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252AA | 32W (Tc) | N-Channel | — | 800 V | 2A (Tc) | 3.4Ohm @ 1A, 10V | 4.5V @ 200µA | 9.6 nC @ 10 V | 400 pF @ 100 V | 10V | ±20V | — |
|
FCD360N65S3R0
MOSFET N-CH 650V 10A DPAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | D-PAK (TO-252) | 83W (Tc) | N-Channel | — | 650 V | 10A (Tc) | 360mOhm @ 5A, 10V | 4.5V @ 1mA | 18 nC @ 10 V | 730 pF @ 400 V | 10V | ±30V | — |
|
FCD380N60E
MOSFET N-CH 600V 10.2A DPAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252AA | 106W (Tc) | N-Channel | — | 600 V | 10.2A (Tc) | 380mOhm @ 5A, 10V | 3.5V @ 250µA | 45 nC @ 10 V | 1770 pF @ 25 V | 10V | ±20V | — |
|
FCD4N60TF
MOSFET N-CH 600V 3.9A DPAK |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252AA | 50W (Tc) | N-Channel | — | 600 V | 3.9A (Tc) | 1.2Ohm @ 2A, 10V | 5V @ 250µA | 16.6 nC @ 10 V | 540 pF @ 25 V | 10V | ±30V | — |
|
FCD4N60TM
MOSFET N-CH 600V 3.9A DPAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252AA | 50W (Tc) | N-Channel | — | 600 V | 3.9A (Tc) | 1.2Ohm @ 2A, 10V | 5V @ 250µA | 16.6 nC @ 10 V | 540 pF @ 25 V | 10V | ±30V | — |