Transistörler - FET, MOSFET - Tekil
- Komponent
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Komponentler
10,000 sonuç · Sayfa 107/200| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSZ086P03NS3GATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 2.1W (Ta), 69W (Tc) | P-Channel | — | 30 V | 13.5A (Ta), 40A (Tc) | 8.6mOhm @ 20A, 10V | 3.1V @ 105µA | 57.5 nC @ 10 V | 4785 pF @ 15 V | 6V, 10V | ±25V | — |
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BSZ088N03LSG
BSZ088N03 - 12V-300V N-CHANNEL P |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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BSZ088N03LSGATMA1
MOSFET N-CH 30V 12A/40A 8TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 2.1W (Ta), 35W (Tc) | N-Channel | — | 30 V | 12A (Ta), 40A (Tc) | 8.8mOhm @ 20A, 10V | 2.2V @ 250µA | 21 nC @ 10 V | 1700 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSZ088N03MSG
BSZ088N03 - 12V-300V N-CHANNEL P |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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BSZ088N03MSGATMA1
MOSFET N-CH 30V 11A/40A 8TSDSON |
Infineon Technologies | Not For New Designs | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 2.1W (Ta), 35W (Tc) | N-Channel | — | 30 V | 11A (Ta), 40A (Tc) | 8mOhm @ 20A, 10V | 2V @ 250µA | 27 nC @ 10 V | 2100 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSZ0901NSATMA1
MOSFET N-CH 30V 22A/40A 8TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 2.1W (Ta), 50W (Tc) | N-Channel | — | 30 V | 22A (Ta), 40A (Tc) | 2mOhm @ 20A, 10V | 2.2V @ 250µA | 45 nC @ 10 V | 2850 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSZ0901NSIATMA1
MOSFET N-CH 30V 25A/40A TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8-FL | 2.1W (Ta), 69W (Tc) | N-Channel | Schottky Diode (Body) | 30 V | 25A (Ta), 40A (Tc) | 2.1mOhm @ 20A, 10V | 2.2V @ 250µA | 41 nC @ 10 V | 2600 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSZ0902NSATMA1
MOSFET N-CH 30V 19A/40A TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8-FL | 2.1W (Ta), 48W (Tc) | N-Channel | — | 30 V | 19A (Ta), 40A (Tc) | 2.6mOhm @ 20A, 10V | 2V @ 250µA | 26 nC @ 10 V | 1700 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSZ0902NSIATMA1
MOSFET N-CH 30V 21A/40A TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8-FL | 2.5W (Ta), 48W (Tc) | N-Channel | — | 30 V | 21A (Ta), 40A (Tc) | 2.8mOhm @ 30A, 10V | 2V @ 250µA | 24 nC @ 10 V | 1500 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSZ0904NSIATMA1
MOSFET N-CH 30V 18A/40A TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8-FL | 2.1W (Ta), 37W (Tc) | N-Channel | Schottky Diode (Body) | 30 V | 18A (Ta), 40A (Tc) | 4mOhm @ 30A, 10V | 2V @ 250µA | 11 nC @ 4.5 V | 1463 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSZ0905PNSATMA1
MOSFET P-CH 30V 40A TDSON-8 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8 | 69W (Ta) | P-Channel | — | 30 V | 40A (Tc) | 8.6mOhm @ 20A, 10V | 1.9V @ 105µA | 43.2 nC @ 10 V | 3190 pF @ 15 V | 6V, 10V | ±25V | — |
|
BSZ0908NDXTMA1
SMALL SIGNAL N-CHANNEL MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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BSZ0909LSATMA1
MOSFET N-CH 30V 19A/40A TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8 FL | — | N-Channel | — | 30 V | 19A (Ta), 40A (Tc) | 3mOhm @ 20A, 10V | 2V @ 250µA | 26 nC @ 10 V | 1700 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSZ0909NSATMA1
MOSFET N-CH 34V 9A/36A 8TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 2.1W (Ta), 25W (Tc) | N-Channel | — | 34 V | 9A (Ta), 36A (Tc) | 12mOhm @ 20A, 10V | 2V @ 250µA | 17 nC @ 10 V | 1310 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSZ0910LSATMA1
MOSFET N-CH 30V 18A/40A TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8 FL | 2.1W (Ta), 37W (Tc) | N-Channel | — | 30 V | 18A (Ta), 40A (Tc) | 4.5mOhm @ 30A, 10V | 2V @ 250µA | 17 nC @ 10 V | 1100 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSZ0911LSATMA1
MOSFET N-CH 30V 12A/40A TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8 FL | — | N-Channel | — | 30 V | 12A (Ta), 40A (Tc) | 7mOhm @ 20A, 10V | 2V @ 250µA | 10 nC @ 10 V | 670 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSZ0945NDXTMA1
TRENCH <= 40V |
Infineon Technologies | Not For New Designs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSZ096N10LS5ATMA1
MOSFET N-CH 100V 40A TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8-FL | 69W (Tc) | N-Channel | Standard | 100 V | 40A (Tc) | 9.6mOhm @ 20A, 10V | 2.3V @ 36µA | 22 nC @ 10 V | 2100 pF @ 50 V | 4.5V, 10V | ±20V | — |
|
BSZ097N04LSGATMA1
MOSFET N-CH 40V 12A/40A 8TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 2.1W (Ta), 35W (Tc) | N-Channel | — | 40 V | 12A (Ta), 40A (Tc) | 9.7mOhm @ 20A, 10V | 2V @ 14µA | 24 nC @ 10 V | 1900 pF @ 20 V | 4.5V, 10V | ±20V | — |
|
BSZ097N10NS5ATMA1
MOSFET N-CH 100V 8A/40A TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8-FL | 2.1W (Ta), 69W (Tc) | N-Channel | — | 100 V | 8A (Ta), 40A (Tc) | 9.7mOhm @ 20A, 10V | 3.8V @ 36µA | 28 nC @ 10 V | 2080 pF @ 50 V | 6V, 10V | ±20V | — |
|
BSZ0994NSATMA1
MOSFET N-CH 30V 13A 8TSDSON-25 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8-25 | 2.1W (Ta) | N-Channel | — | 30 V | 13A (Ta) | 7mOhm @ 5A, 10V | 2V @ 250µA | 7 nC @ 4.5 V | 890 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSZ099N06LS5ATMA1
MOSFET N-CH 60V 46A TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8-FL | 36W (Tc) | N-Channel | Standard | 60 V | 46A (Tc) | 9.9mOhm @ 20A, 10V | 2.3V @ 14µA | 3.1 nC @ 4.5 V | 1300 pF @ 30 V | 4.5V, 10V | ±20V | — |
|
BSZ100N03LSGATMA1
MOSFET N-CH 30V 12A/40A 8TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 2.1W (Ta), 30W (Tc) | N-Channel | — | 30 V | 12A (Ta), 40A (Tc) | 10mOhm @ 20A, 10V | 2.2V @ 250µA | 17 nC @ 10 V | 1500 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSZ100N03MSGATMA1
MOSFET N-CH 30V 10A/40A 8TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 2.1W (Ta), 30W (Tc) | N-Channel | — | 30 V | 10A (Ta), 40A (Tc) | 9.1mOhm @ 20A, 10V | 2V @ 250µA | 23 nC @ 10 V | 1700 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSZ100N06LS3GATMA1
MOSFET N-CH 60V 11A/20A 8TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 2.1W (Ta), 50W (Tc) | N-Channel | — | 60 V | 11A (Ta), 20A (Tc) | 10mOhm @ 20A, 10V | 2.2V @ 23µA | 45 nC @ 10 V | 3500 pF @ 30 V | 4.5V, 10V | ±20V | — |
|
BSZ100N06NSATMA1
MOSFET N-CH 60V 40A TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8-FL | 2.1W (Ta), 36W (Tc) | N-Channel | — | 60 V | 40A (Tc) | 10mOhm @ 20A, 10V | 3.3V @ 14µA | 15 nC @ 10 V | 1075 pF @ 30 V | 6V, 10V | ±20V | — |
|
BSZ105N04NSGATMA1
MOSFET N-CH 40V 11A/40A 8TSDSON |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 2.1W (Ta), 35W (Tc) | N-Channel | — | 40 V | 11A (Ta), 40A (Tc) | 10.5mOhm @ 20A, 10V | 4V @ 14µA | 17 nC @ 10 V | 1300 pF @ 20 V | 10V | ±20V | — |
|
BSZ110N06NS3GATMA1
MOSFET N-CH 60V 20A 8TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 2.1W (Ta), 50W (Tc) | N-Channel | — | 60 V | 20A (Tc) | 11mOhm @ 20A, 10V | 4V @ 23µA | 33 nC @ 10 V | 2700 pF @ 30 V | 10V | ±20V | — |
|
BSZ110N08NS5ATMA1
MOSFET N-CH 80V 40A TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8-FL | 50W (Tc) | N-Channel | — | 80 V | 40A (Tc) | 11mOhm @ 20A, 10V | 3.8V @ 22µA | 18.5 nC @ 10 V | 1300 pF @ 40 V | 6V, 10V | ±20V | — |
|
BSZ120P03NS3EGATMA1
MOSFET P-CH 30V 11A/40A 8TSDSON |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 2.1W (Ta), 52W (Tc) | P-Channel | — | 30 V | 11A (Ta), 40A (Tc) | 12mOhm @ 20A, 10V | 3.1V @ 73µA | 45 nC @ 10 V | 3360 pF @ 15 V | 6V, 10V | ±25V | — |
|
BSZ120P03NS3GATMA1
MOSFET P-CH 30V 11A/40A 8TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 2.1W (Ta), 52W (Tc) | P-Channel | — | 30 V | 11A (Ta), 40A (Tc) | 12mOhm @ 20A, 10V | 3.1V @ 73µA | 45 nC @ 10 V | 3360 pF @ 15 V | 6V, 10V | ±25V | — |
|
BSZ123N08NS3GATMA1
MOSFET N-CH 80V 10A/40A 8TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 2.1W (Ta), 66W (Tc) | N-Channel | — | 80 V | 10A (Ta), 40A (Tc) | 12.3mOhm @ 20A, 10V | 3.5V @ 33µA | 25 nC @ 10 V | 1700 pF @ 40 V | 6V, 10V | ±20V | — |
|
BSZ12DN20NS3G
BSZ12DN20 - 12V-300V N-CHANNEL P |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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BSZ12DN20NS3GATMA1
MOSFET N-CH 200V 11.3A 8TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 50W (Tc) | N-Channel | — | 200 V | 11.3A (Tc) | 125mOhm @ 5.7A, 10V | 4V @ 25µA | 8.7 nC @ 10 V | 680 pF @ 100 V | 10V | ±20V | — |
|
BSZ130N03LSGATMA1
MOSFET N-CH 30V 10A/35A 8TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 2.1W (Ta), 25W (Tc) | N-Channel | — | 30 V | 10A (Ta), 35A (Tc) | 13mOhm @ 20A, 10V | 2.2V @ 250µA | 13 nC @ 10 V | 970 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSZ130N03MSG
BSZ130N03 - 12V-300V N-CHANNEL P |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSZ130N03MSGATMA1
MOSFET N-CH 30V 9A/35A 8TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 2.1W (Ta), 25W (Tc) | N-Channel | — | 30 V | 9A (Ta), 35A (Tc) | 11.5mOhm @ 20A, 10V | 2V @ 250µA | 17 nC @ 10 V | 1300 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSZ146N10LS5ATMA1
MOSFET N-CH 100V 40A TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8-FL | 52W (Tc) | N-Channel | Standard | 100 V | 40A (Tc) | 14.6mOhm @ 20A, 10V | 2.3V @ 23µA | 3.2 nC @ 4.5 V | 1300 pF @ 50 V | 4.5V, 10V | ±20V | — |
|
BSZ150N10LS3GATMA1
MOSFET N-CH 100V 40A 8TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 2.1W (Ta), 63W (Tc) | N-Channel | — | 100 V | 40A (Tc) | 15mOhm @ 20A, 10V | 2.1V @ 33µA | 35 nC @ 10 V | 2500 pF @ 50 V | 4.5V, 10V | ±20V | — |
|
BSZ160N10NS3GATMA1
MOSFET N-CH 100V 8A/40A 8TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 2.1W (Ta), 63W (Tc) | N-Channel | — | 100 V | 8A (Ta), 40A (Tc) | 16mOhm @ 20A, 10V | 3.5V @ 12µA | 25 nC @ 10 V | 1700 pF @ 50 V | 6V, 10V | ±20V | — |
|
BSZ165N04NSGATMA1
MOSFET N-CH 40V 8.9A/31A TSDSON |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 2.1W (Ta), 25W (Tc) | N-Channel | — | 40 V | 8.9A (Ta), 31A (Tc) | 16.5mOhm @ 20A, 10V | 4V @ 10µA | 10 nC @ 10 V | 840 pF @ 20 V | 10V | ±20V | — |
|
BSZ16DN25NS3GATMA1
MOSFET N-CH 250V 10.9A 8TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 62.5W (Tc) | N-Channel | — | 250 V | 10.9A (Tc) | 165mOhm @ 5.5A, 10V | 4V @ 32µA | 11.4 nC @ 10 V | 920 pF @ 100 V | 10V | ±20V | — |
|
BSZ180P03NS3EGATMA1
MOSFET P-CH 30V 9A/39.5A TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 2.1W (Ta), 40W (Tc) | P-Channel | — | 30 V | 9A (Ta), 39.5A (Tc) | 18mOhm @ 20A, 10V | 3.1V @ 48µA | 30 nC @ 10 V | 2220 pF @ 15 V | 6V, 10V | ±25V | — |
|
BSZ180P03NS3GATMA1
MOSFET P-CH 30V 9A/39.6A TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 2.1W (Ta), 40W (Tc) | P-Channel | — | 30 V | 9A (Ta), 39.6A (Tc) | 18mOhm @ 20A, 10V | 3.1V @ 48µA | 30 nC @ 10 V | 2220 pF @ 15 V | 6V, 10V | ±25V | — |
|
BSZ22DN20NS3G
BSZ22DN20 - 12V-300V N-CHANNEL P |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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BSZ22DN20NS3GATMA1
MOSFET N-CH 200V 7A 8TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 34W (Tc) | N-Channel | — | 200 V | 7A (Tc) | 225mOhm @ 3.5A, 10V | 4V @ 13µA | 5.6 nC @ 10 V | 430 pF @ 100 V | 10V | ±20V | — |
|
BSZ240N12NS3GATMA1
MOSFET N-CH 120V 37A 8TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 66W (Tc) | N-Channel | — | 120 V | 37A (Tc) | 24mOhm @ 20A, 10V | 4V @ 35µA | 27 nC @ 10 V | 1900 pF @ 60 V | 10V | ±20V | — |
|
BSZ300N15NS5ATMA1
MOSFET N-CH 150V 32A TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8-FL | 62.5W (Tc) | N-Channel | — | 150 V | 32A (Tc) | 30mOhm @ 16A, 10V | 4.6V @ 32µA | 13 nC @ 10 V | 950 pF @ 75 V | 8V, 10V | ±20V | — |
|
BSZ340N08NS3GATMA1
MOSFET N-CH 80V 6A/23A 8TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 2.1W (Ta), 32W (Tc) | N-Channel | — | 80 V | 6A (Ta), 23A (Tc) | 34mOhm @ 12A, 10V | 3.5V @ 12µA | 9.1 nC @ 10 V | 630 pF @ 40 V | 6V, 10V | ±20V | — |
|
BSZ42DN25NS3GATMA1
MOSFET N-CH 250V 5A TSDSON-8 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8-2 | 33.8W (Tc) | N-Channel | — | 250 V | 5A (Tc) | 425mOhm @ 2.5A, 10V | 4V @ 13µA | 5.5 nC @ 10 V | 430 pF @ 100 V | 10V | ±20V | — |