Transistörler - FET, MOSFET - Tekil
- Komponent
- 40,131
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Komponentler
10,000 sonuç · Sayfa 108/200| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSZ440N10NS3GATMA1
MOSFET N-CH 100V 5.3A/18A TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 29W (Tc) | N-Channel | — | 100 V | 5.3A (Ta), 18A (Tc) | 44mOhm @ 12A, 10V | 2.7V @ 12µA | 9.1 nC @ 10 V | 640 pF @ 50 V | 6V, 10V | ±20V | — |
|
BSZ520N15NS3GATMA1
MOSFET N-CH 150V 21A 8TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 57W (Tc) | N-Channel | — | 150 V | 21A (Tc) | 52mOhm @ 18A, 10V | 4V @ 35µA | 12 nC @ 10 V | 890 pF @ 75 V | 8V, 10V | ±20V | — |
|
BSZ900N15NS3GATMA1
MOSFET N-CH 150V 13A 8TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 38W (Tc) | N-Channel | — | 150 V | 13A (Tc) | 90mOhm @ 10A, 10V | 4V @ 20µA | 7 nC @ 10 V | 510 pF @ 75 V | 8V, 10V | ±20V | — |
|
BSZ900N20NS3GATMA1
MOSFET N-CH 200V 15.2A 8TSDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | 62.5W (Tc) | N-Channel | — | 200 V | 15.2A (Tc) | 90mOhm @ 7.6A, 10V | 4V @ 30µA | 11.6 nC @ 10 V | 920 pF @ 100 V | 10V | ±20V | — |
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BTS110E3045ANTMA1
MOSFET N-CH 100V 10A TO220AB |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | TO-220AB | — | N-Channel | — | 100 V | 10A (Tc) | 200mOhm @ 5A, 10V | 3.5V @ 1mA | — | 600 pF @ 25 V | — | — | — |
|
BTS110NKSA1
MOSFET N-CH 100V 10A TO220AB |
Rochester Electronics | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | — | N-Channel | — | 100 V | 10A (Tc) | 200mOhm @ 5A, 10V | 3.5V @ 1mA | — | 600 pF @ 25 V | — | — | — |
|
BTS112A
N-CHANNEL POWER MOSFET |
Rochester Electronics | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BTS112AE3045ANTMA1
N-CHANNEL POWER MOSFET |
Rochester Electronics | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BTS113AE3045ANTMA1
MOSFET N-CH 60V 11.5A TO220AB |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | TO-220AB | 40W (Tc) | N-Channel | — | 60 V | 11.5A (Tc) | 170mOhm @ 5.8A, 4.5V | 2.5V @ 1mA | — | 560 pF @ 25 V | 4.5V | ±10V | — |
|
BTS113AE3064NKSA1
MOSFET N-CH 60V 11.5A TO220AB |
Rochester Electronics | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | 40W (Tc) | N-Channel | — | 60 V | 11.5A (Tc) | 170mOhm @ 5.8A, 4.5V | 2.5V @ 1mA | — | 560 pF @ 25 V | 4.5V | ±10V | — |
|
BTS113ANKSA1
MOSFET N-CH 60V 11.5A TO220AB |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | 40W (Tc) | N-Channel | — | 60 V | 11.5A (Tc) | 170mOhm @ 5.8A, 4.5V | 2.5V @ 1mA | — | 560 pF @ 25 V | 4.5V | ±10V | — |
|
BTS114A E3045A
N-CHANNEL POWER MOSFET |
Rochester Electronics | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BTS115A
N-CHANNEL POWER MOSFET |
Rochester Electronics | Obsolete | — | — | — | — | — | — | — | — | — | 15.5A (Tc) | — | — | — | — | — | — | — |
|
BTS115AE6327
N-CHANNEL POWER MOSFET |
Rochester Electronics | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BTS115ANKSA1
MOSFET N-CH 50V 15.5A TO220AB |
Rochester Electronics | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | 50W (Tc) | N-Channel | — | 50 V | 15.5A (Tc) | 120mOhm @ 7.8A, 4.5V | 2.5V @ 1mA | — | 735 pF @ 25 V | 4.5V | ±10V | — |
|
BTS121AE3045ANTMA1
MOSFET N CH 100V 22A TO-220AB |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | PG-TO220-3-5 | 95W (Tc) | N-Channel | — | 100 V | 22A (Tc) | 100mOhm @ 9.5A, 4.5V | 2.5V @ 1mA | — | 1500 pF @ 25 V | 4.5V | ±10V | — |
|
BTS121ANKSA1
MOSFET N-CH 100V 22A TO220-3 |
Rochester Electronics | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | PG-TO220-3 | 95W (Tc) | N-Channel | — | 100 V | 22A (Tc) | 100mOhm @ 9.5A, 4.5V | 2.5V @ 1mA | — | 1500 pF @ 25 V | 4.5V | ±10V | — |
|
BTS129NKSA1
POWER FIELD-EFFECT TRANSISTOR, 2 |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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BTS130-E3045A
N-CHANNEL POWER MOSFET |
Rochester Electronics | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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BTS131E3045ANTMA1
N-CHANNEL POWER MOSFET |
Rochester Electronics | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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BTS132
N-CHANNEL POWER MOSFET |
Rochester Electronics | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BTS132E3045ANTMA1
N-CHANNEL POWER MOSFET |
Rochester Electronics | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BTS240AHKSA1
N-CHANNEL POWER MOSFET |
Rochester Electronics | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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BTS244Z
N-CHANNEL POWER MOSFET |
Rochester Electronics | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BTS244Z E3043
MOSFET N-CH 55V 35A TO220-5-43 |
Infineon Technologies | Obsolete | -40°C ~ 175°C (TJ) | Through Hole | TO-220-5 | MOSFET (Metal Oxide) | P-TO220-5-43 | 170W (Tc) | N-Channel | Temperature Sensing Diode | 55 V | 35A (Tc) | 13mOhm @ 19A, 10V | 2V @ 130µA | 130 nC @ 10 V | 2660 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BTS244Z E3062A
MOSFET N-CH 55V 35A TO220-5-62 |
Infineon Technologies | Obsolete | -40°C ~ 175°C (TJ) | Surface Mount | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB | MOSFET (Metal Oxide) | PG-TO220-5-62 | 170W (Tc) | N-Channel | Temperature Sensing Diode | 55 V | 35A (Tc) | 13mOhm @ 19A, 10V | 2V @ 130µA | 130 nC @ 10 V | 2660 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BTS244ZAKSA1
N-CHANNEL POWER MOSFET |
Rochester Electronics | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BTS244ZE3043
N-CHANNEL POWER MOSFET |
Rochester Electronics | Obsolete | -40°C ~ 175°C (TJ) | Through Hole | TO-220-5 | MOSFET (Metal Oxide) | TO-220-5 | 170W (Tc) | N-Channel | — | 55 V | 35A (Tc) | 13mOhm @ 19A, 10V | 2V @ 130µA | 130 nC @ 10 V | 2660 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BTS244ZE3043AKSA2
MOSFET N-CH 55V 35A TO220-5-12 |
Infineon Technologies | Not For New Designs | -40°C ~ 175°C (TJ) | Through Hole | TO-220-5 | MOSFET (Metal Oxide) | PG-TO220-5-12 | 170W (Tc) | N-Channel | Temperature Sensing Diode | 55 V | 35A (Tc) | 13mOhm @ 19A, 10V | 2V @ 130µA | 130 nC @ 10 V | 2660 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BTS244ZE3062AATMA1
N-CHANNEL POWER MOSFET |
Rochester Electronics | Obsolete | -40°C ~ 175°C (TJ) | Surface Mount | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB | MOSFET (Metal Oxide) | PG-TO263-5-2 | 170W (Tc) | N-Channel | — | 55 V | 35A (Tc) | 13mOhm @ 19A, 10V | 2V @ 130µA | 130 nC @ 10 V | 2660 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BTS244ZE3062AATMA2
MOSFET N-CH 55V 35A TO263-5 |
Infineon Technologies | Not For New Designs | -40°C ~ 175°C (TJ) | Surface Mount | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB | MOSFET (Metal Oxide) | PG-TO263-5-2 | 170W (Tc) | N-Channel | Temperature Sensing Diode | 55 V | 35A (Tc) | 13mOhm @ 19A, 10V | 2V @ 130µA | 130 nC @ 10 V | 2660 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BTS244ZE3062ANTMA1
BTS244 - TEMPFET, AUTOMOTIVE LOW |
Rochester Electronics | Active | -40°C ~ 175°C (TJ) | Surface Mount | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB | MOSFET (Metal Oxide) | PG-TO263-5-2 | 170W (Tc) | N-Channel | — | 55 V | 35A (Tc) | 13mOhm @ 19A, 10V | 2V @ 130µA | 130 nC @ 10 V | 2660 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BTS244ZNKSA1
MOSFET N-CH 55V 35A TO220-5-3 |
Infineon Technologies | Obsolete | -40°C ~ 175°C (TJ) | Through Hole | TO-220-5 Formed Leads | MOSFET (Metal Oxide) | PG-TO220-5-3 | 170W (Tc) | N-Channel | Temperature Sensing Diode | 55 V | 35A (Tc) | 13mOhm @ 19A, 10V | 2V @ 130µA | 130 nC @ 10 V | 2660 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BTS247Z
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BTS247Z E3062A
MOSFET N-CH 55V 33A TO263-5 |
Infineon Technologies | Obsolete | -40°C ~ 175°C (TJ) | Surface Mount | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB | MOSFET (Metal Oxide) | PG-TO263-5-2 | 120W (Tc) | N-Channel | Temperature Sensing Diode | 55 V | 33A (Tc) | 18mOhm @ 12A, 10V | 2V @ 90µA | 90 nC @ 10 V | 1730 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BTS247ZAKSA1
MOSFET N-CH 55V 33A TO220-5-3 |
Infineon Technologies | Obsolete | -40°C ~ 175°C (TJ) | Through Hole | TO-220-5 Formed Leads | MOSFET (Metal Oxide) | PG-TO220-5-3 | 120W (Tc) | N-Channel | Temperature Sensing Diode | 55 V | 33A (Tc) | 18mOhm @ 12A, 10V | 2V @ 90µA | 90 nC @ 10 V | 1730 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BTS247ZE3043AKSA1
MOSFET N-CH 55V 33A TO220-5-43 |
Rochester Electronics | Obsolete | -40°C ~ 175°C (TJ) | Through Hole | TO-220-5 | MOSFET (Metal Oxide) | P-TO220-5-43 | 120W (Tc) | N-Channel | Temperature Sensing Diode | 55 V | 33A (Tc) | 18mOhm @ 12A, 10V | 2V @ 90µA | 90 nC @ 10 V | 1730 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BTS247ZE3062AATMA1
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BTS247ZE3062AATMA2
MOSFET N-CH 55V 33A TO263-5 |
Infineon Technologies | Not For New Designs | -40°C ~ 175°C (TJ) | Surface Mount | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB | MOSFET (Metal Oxide) | PG-TO263-5-2 | 120W (Tc) | N-Channel | Temperature Sensing Diode | 55 V | 33A (Tc) | 18mOhm @ 12A, 10V | 2V @ 90µA | 90 nC @ 10 V | 1730 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BTS247ZE3062ANTMA1
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BTS282Z E3180A
MOSFET N-CH 49V 80A TO220-7 |
Infineon Technologies | Obsolete | -40°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | MOSFET (Metal Oxide) | PG-TO220-7-180 | 300W (Tc) | N-Channel | Temperature Sensing Diode | 49 V | 80A (Tc) | 6.5mOhm @ 36A, 10V | 2V @ 240µA | 232 nC @ 10 V | 4800 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BTS282Z E3230
MOSFET N-CH 49V 80A TO220-7 |
Infineon Technologies | Obsolete | -40°C ~ 175°C (TJ) | Through Hole | TO-220-7 | MOSFET (Metal Oxide) | P-TO220-7-230 | 300W (Tc) | N-Channel | Temperature Sensing Diode | 49 V | 80A (Tc) | 6.5mOhm @ 36A, 10V | 2V @ 240µA | 232 nC @ 10 V | 4800 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BTS282ZAKSA1
MOSFET N-CH 49V 80A TO220-7 |
Rochester Electronics | Obsolete | -40°C ~ 175°C (TJ) | Through Hole | TO-220-7 | MOSFET (Metal Oxide) | P-TO220-7-3 | 300W (Tc) | N-Channel | Temperature Sensing Diode | 49 V | 80A (Tc) | 6.5mOhm @ 36A, 10V | 2V @ 240µA | 232 nC @ 10 V | 4800 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BTS282ZDELCO
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BTS282ZE3180A
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BTS282ZE3180AATMA1
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BTS282ZE3180AATMA2
MOSFET N-CH 49V 80A TO263-7 |
Infineon Technologies | Not For New Designs | -40°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | MOSFET (Metal Oxide) | PG-TO263-7-1 | 300W (Tc) | N-Channel | Temperature Sensing Diode | 49 V | 80A (Tc) | 6.5mOhm @ 36A, 10V | 2V @ 240µA | 232 nC @ 10 V | 4800 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BTS282ZE3180ANTMA1
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BTS282ZE3230
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BTS282ZE3230AKSA2
MOSFET N-CH 49V 80A TO220-7 |
Rochester Electronics | Not For New Designs | -40°C ~ 175°C (TJ) | Through Hole | TO-220-7 | MOSFET (Metal Oxide) | PG-TO220-7-12 | 300W (Tc) | N-Channel | Temperature Sensing Diode | 49 V | 80A (Tc) | 6.5mOhm @ 36A, 10V | 2V @ 240µA | 232 nC @ 10 V | 4800 pF @ 25 V | 4.5V, 10V | ±20V | — |