Transistörler - FET, MOSFET - RF
- Komponent
- 3,912
- Marka
- 26
Komponentler
3,912 sonuç · Sayfa 6/79| Parça No | Üretici | Part Status | Voltage - Rated | Package / Case | Frequency | Current Rating (Amps) | Supplier Device Package | Power - Output | Current - Test | Transistor Type | Gain | Voltage - Test | Noise Figure | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
A2T18S165-12SR3
AIRFAST RF POWER LDMOS TRANSISTO |
NXP Semiconductors | Obsolete | 65 V | NI-780-2S2L | 1.805GHz ~ 1.995GHz | 10µA | NI-780-2S2L | 148W | 800 mA | LDMOS | 18dB | 28 V | — | — |
|
A2T18S166W12SR3
FET RF 1.8GHZ 166W NI-780S-2L2 |
NXP Semiconductors | Active | 28 V | NI-780-2S2L | 1.805GHz ~ 1.995GHz | — | NI-780-2S2L | 38W | — | LDMOS | — | — | — | — |
|
A2T18S260-12SR3
AIRFAST RF POWER LDMOS TRANSISTO |
NXP Semiconductors | Obsolete | 65 V | NI-780-2S2L | 1.805GHz ~ 1.995GHz | 10µA | NI-780-2S2L | 257W | 1.4 A | LDMOS | 18.9dB | 28 V | — | — |
|
A2T18S260W12NR3
AIRFAST RF POWER LDMOS TRANSISTO |
NXP Semiconductors | Obsolete | 65 V | OM-880X-2L2L | 1.805GHz ~ 1.88GHz | 10µA | OM-880X-2L2L | 280W | 1.5 A | LDMOS | 18.7dB | 28 V | — | — |
|
A2T18S261W12NR3
AIRFAST RF POWER LDMOS TRANSISTO |
NXP Semiconductors | Obsolete | 65 V | OM-880X-2L2L | 1.805GHz ~ 1.88GHz | 10µA | OM-880X-2L2L | 280W | 1.5 A | LDMOS | 18.2dB | 28 V | — | — |
|
A2T18S262W12NR3
AIRFAST RF POWER LDMOS TRANSISTO |
NXP Semiconductors | Last Time Buy | 65 V | OM-880X-2L2L | 1.805GHz ~ 1.88GHz | 10µA | OM-880X-2L2L | 231W | 1.6 A | LDMOS | 19.3dB | 28 V | — | — |
|
A2T20H160W04NR3
RF MOSFET LDMOS DUAL 28V OM780-4 |
NXP Semiconductors | Last Time Buy | 65 V | OM780-4 | 1.88GHz ~ 2.025GHz | 10µA | OM780-4 | 200W | 400 mA | LDMOS (Dual) | 17dB | 28 V | — | — |
|
A2T20H330W24NR6
AIRFAST RF POWER LDMOS TRANSISTO |
NXP Semiconductors | Obsolete | 65 V | OM-1230-4L2L | 1.88GHz ~ 2.025GHz | 10µA | OM-1230-4L2L | 229W | 700 mA | LDMOS | 15.9dB | 28 V | — | — |
|
A2T20H330W24SR6
IC TRANS RF LDMOS |
NXP Semiconductors | Last Time Buy | 65 V | NI-1230-4LS2L | 1.88GHz | — | NI-1230-4LS2L | 58W | 700 mA | LDMOS (Dual) | 16.5dB | 28 V | — | — |
|
A2T21H100-25SR3
IC RF LDMOS TRANS CELL |
NXP Semiconductors | Active | — | — | — | — | — | — | — | N-Channel | — | — | — | — |
|
A2T21H140-24SR3
RF MOSFET LDMOS DUAL 28V OM780-4 |
NXP Semiconductors | Last Time Buy | 65 V | OM780-4 | 2.11GHz ~ 2.17GHz | 10µA | OM780-4 | 169W | 350 mA | LDMOS (Dual) | 17.4dB | 28 V | — | — |
|
A2T21H141W24SR3
AIRFAST RF POWER LDMOS TRANSISTO |
NXP Semiconductors | Last Time Buy | — | — | — | — | — | — | — | — | — | — | — | — |
|
A2T21H360-23NR6
RF TRANS 2.1GHZ 360W OM1230-4L2S |
NXP Semiconductors | Last Time Buy | 65 V | OM-1230-4L2L | 2.11GHz ~ 2.2GHz | 10µA | OM-1230-4L2L | 373W | 500 mA | LDMOS (Dual) | 16.8dB | 28 V | — | — |
|
A2T21H360-24SR6
IC TRANS RF LDMOS |
NXP Semiconductors | Last Time Buy | 65 V | NI-1230-4LS2L | 2.14GHz | — | NI-1230-4LS2L | 63W | 500 mA | LDMOS | 16.2dB | 28 V | — | — |
|
A2T21H360-24SR6
AIRFAST RF POWER LDMOS TRANSISTO |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — |
|
A2T21H410-24SR6
IC TRANS RF LDMOS |
NXP Semiconductors | Last Time Buy | 65 V | NI-1230-4LS2L | 2.17GHz | — | NI-1230-4LS2L | 72W | 600 mA | LDMOS (Dual) | 15.6dB | 28 V | — | — |
|
A2T21H450W19SR6
2.1GHZ 450W NI1230S-4S4S |
NXP Semiconductors | Obsolete | 65 V | NI-1230S-4S4S | 2.11GHz ~ 2.2GHz | 10µA | NI-1230S-4S4S | 390W | 800 mA | LDMOS | 15.7dB | 30 V | — | — |
|
A2T21S160-12SR3
IC TRANS RF LDMOS |
NXP Semiconductors | Obsolete | 65 V | NI-780-2S2L | 2.17GHz | — | NI-780-2S2L | 38W | 600 mA | LDMOS | 18.4dB | 28 V | — | — |
|
A2T21S161W12SR3
AIRFAST RF POWER LDMOS TRANSISTO |
NXP Semiconductors | Last Time Buy | 28 V | NI-780-2S2L | 2.11GHz ~ 2.2GHz | — | NI-780-2S2L | 38W | — | LDMOS | — | — | — | — |
|
A2T21S260-12SR3
IC TRANS RF LDMOS |
NXP Semiconductors | Last Time Buy | 65 V | NI-780-2S2L | 2.17GHz | — | NI-780-2S2L | 65W | 1.2 A | LDMOS | 18.7dB | 28 V | — | — |
|
A2T21S260W12NR3
AIRFAST RF POWER LDMOS TRANSISTO |
NXP Semiconductors | Obsolete | 65 V | OM-880X-2L2L | 2.11GHz ~ 2.2GHz | 10µA | OM-880X-2L2L | 218W | 1.6 A | LDMOS | 17.9dB | 28 V | — | — |
|
A2T23H160-24SR3
IC TRANS RF LDMOS |
NXP Semiconductors | Active | 65 V | NI-780S-4L2L | 2.3GHz | — | NI-780S-4L2L | 28W | 350 mA | LDMOS (Dual) | 17.7dB | 28 V | — | — |
|
A2T23H200W23SR6
AIRFAST RF POWER LDMOS TRANSISTO |
NXP Semiconductors | Obsolete | 65 V | ACP-1230S-4L2S | 2.3GHz ~ 2.4GHz | 10µA | ACP-1230S-4L2S | 51W | 500 mA | LDMOS | 15.5dB | 28 V | — | — |
|
A2T23H300-24SR6
IC TRANS RF LDMOS |
NXP Semiconductors | Last Time Buy | 65 V | NI-1230-4LS2L | 2.3GHz | — | NI-1230-4LS2L | 66W | 750 mA | LDMOS (Dual) | 14.9dB | 28 V | — | — |
|
A2T26H160-24SR3
RF MOSFET LDMOS DL 28V NI780S |
NXP Semiconductors | Last Time Buy | 65 V | NI-780S-4L2L | 2.58GHz | — | NI-780S-4L2L | 28W | 350 mA | LDMOS (Dual) | 15.5dB | 28 V | — | — |
|
A2T26H160-24SR3
RF POWER FIELD-EFFECT TRANSISTOR |
Rochester Electronics | Active | 65 V | NI-780S-4L2L | 2.58GHz | — | NI-780S-4L2L | 28W | 350 mA | LDMOS (Dual) | 15.5dB | 28 V | — | — |
|
A2T26H165-24SR3
IC TRANS RF LDMOS |
NXP Semiconductors | Last Time Buy | 65 V | NI-780S-4L2L | 2.5GHz | — | NI-780S-4L2L | 32W | 400 mA | LDMOS (Dual) | 14.7dB | 28 V | — | — |
|
A2T26H300-24SR6
IC TRANS RF LDMOS |
NXP Semiconductors | Last Time Buy | 65 V | NI-1230-4LS2L | 2.5GHz | — | NI-1230-4LS2L | 60W | 800 mA | LDMOS (Dual) | 14.5dB | 28 V | — | — |
|
A2T27S007NT1
AIRFAST RF POWER LDMOS TRANSISTO |
NXP Semiconductors | Obsolete | 28 V | 16-VDFN Exposed Pad | 728MHz ~ 3.6GHz | — | 16-DFN (4x6) | 28.8dBm | — | LDMOS | — | — | — | — |
|
A2T27S020GNR1
AIRFAST RF POWER LDMOS TRANSISTO |
NXP Semiconductors | Active | 65 V | TO-270BA | 400MHz ~ 2.7GHz | 10µA | TO-270-2 GULL | 20W | 185 mA | LDMOS | 21dB | 28 V | — | — |
|
A2T27S020NR1
AIRFAST RF POWER LDMOS TRANSISTO |
NXP Semiconductors | Active | 65 V | TO-270-2 | 400MHz ~ 2.7GHz | 10µA | TO-270-2 | 20W | 185 mA | LDMOS | 21dB | 28 V | — | — |
|
A2V07H400-04NR3
AIRFAST RF POWER LDMOS TRANSISTO |
NXP Semiconductors | Active | 105 V | OM-780G-4L | 595MHz ~ 851MHz | 10µA | OM-780G-4L | 267W | 700 mA | LDMOS (Dual) | 19.9dB | 48 V | — | — |
|
A2V07H525-04NR6
AIRFAST RF LDMOS WIDEBAND INTEGR |
NXP Semiconductors | Active | 105 V | OM-1230-4L | 595MHz ~ 851MHz | 10µA | OM-1230-4L | 120W | 700 mA | LDMOS | 17.5dB | 48 V | — | — |
|
A2V09H300-04NR3
AIRFAST RF POWER LDMOS TRANSISTO |
NXP Semiconductors | Active | 105 V | OM-780G-4L | 720MHz ~ 960MHz | 10µA | OM-780G-4L | 53dBm | 400 mA | LDMOS | 19.7dB | 48 V | — | — |
|
A2V09H400-04NR3
AIRFAST RF POWER LDMOS TRANSISTO |
NXP Semiconductors | Active | 105 V | OM-780-4L | 720MHz ~ 960MHz | 10µA | OM-780-4L | 107W | 688 mA | LDMOS | 17.9dB | 48 V | — | — |
|
A2V09H400-04SR3
AIRFAST RF POWER LDMOS TRANSISTO |
NXP Semiconductors | Active | 105 V | NI-780S-4L | 720MHz ~ 960MHz | 10µA | NI-780S-4L | 102W | 750 mA | LDMOS (Dual) | 18.7dB | 48 V | — | — |
|
A2V09H525-04NR6
AIRFAST RF LDMOS WIDEBAND INTEGR |
NXP Semiconductors | Active | 105 V | OM-1230-4L | 720MHz ~ 960MHz | 10µA | OM-1230-4L | 120W | 688 mA | LDMOS | 18.9dB | 48 V | — | — |
|
A3G18D510-04SR3
AIRFAST RF POWER GAN TRANSISTOR, |
NXP Semiconductors | Active | 125 V | NI-780S-4L | 1.805GHz ~ 2.2GHz | — | NI-780S-4L | 56W | 250 mA | — | 16dB | 48 V | — | — |
|
A3G18H500-04SR3
RF MOSFET LDMOS 48V NI-780S-4L |
NXP Semiconductors | Active | 125 V | NI-780S-4L | 1.805GHz ~ 1.88GHz | — | NI-780S-4L | 107W | 200 mA | LDMOS (Dual) | 15.4dB | 48 V | — | — |
|
A3G20S250-01SR3
AIRFAST RF POWER GAN TRANSISTOR |
NXP Semiconductors | Active | — | — | — | — | — | — | — | — | — | — | — | — |
|
A3G22H400-04SR3
AIRFAST RF POWER GAN TRANSISTOR |
NXP Semiconductors | Active | — | — | — | — | — | — | — | — | — | — | — | — |
|
A3G26D055N-100
RF REF CIRCUIT 25W 100-2800MHZ |
NXP Semiconductors | Active | 125 V | 6-LDFN Exposed Pad | 100MHz ~ 2.69GHz | — | 6-PDFN (7x6.5) | 8W | 40 mA | GaN | 13.9dB | 48 V | — | — |
|
A3G26D055N-1805
RF REFERENCE CIRCUIT 25W 1805-18 |
NXP Semiconductors | Active | 125 V | 6-LDFN Exposed Pad | 100MHz ~ 2.69GHz | — | 6-PDFN (7x6.5) | 8W | 40 mA | GaN | 13.9dB | 48 V | — | — |
|
A3G26D055N-2110
RF REFERENCE CIRCUIT 25W 2110-22 |
NXP Semiconductors | Active | 125 V | 6-LDFN Exposed Pad | 100MHz ~ 2.69GHz | — | 6-PDFN (7x6.5) | 8W | 40 mA | GaN | 13.9dB | 48 V | — | — |
|
A3G26D055N-2400
RF REFERENCE CIRCUIT 28W 2400MHZ |
NXP Semiconductors | Active | 125 V | 6-LDFN Exposed Pad | 100MHz ~ 2.69GHz | — | 6-PDFN (7x6.5) | 8W | 40 mA | GaN | 13.9dB | 48 V | — | — |
|
A3G26D055N-2515
RF REFERENCE CIRCUIT 55W 2515MHZ |
NXP Semiconductors | Active | 125 V | 6-LDFN Exposed Pad | 100MHz ~ 2.69GHz | — | 6-PDFN (7x6.5) | 8W | 40 mA | GaN | 13.9dB | 48 V | — | — |
|
A3G26D055NT4
RF GAN MOSFET AIRFAST 8W 48V |
NXP Semiconductors | Active | 125 V | 6-LDFN Exposed Pad | 100MHz ~ 2.69GHz | — | 6-PDFN (7x6.5) | 8W | 40 mA | GaN | 13.9dB | 48 V | — | — |
|
A3G26H200W17SR3
AIRFAST RF POWER GAN TRANSISTOR, |
NXP Semiconductors | Active | 125 V | NI-780S-4S2S | 2.496GHz ~ 2.69GHz | — | NI-780S-4S2S | 34W | 120 mA | — | 14.2dB | 48 V | — | — |
|
A3G26H350W17SR3
AIRFAST RF POWER GAN TRANSISTOR, |
NXP Semiconductors | Active | 125 V | NI-780S-4S2S | 2.496GHz ~ 2.69GHz | — | NI-780S-4S2S | 59W | 250 mA | — | 13.3dB | 48 V | — | — |
|
A3G26H501W17SR3
AIRFAST RF POWER GAN TRANSISTOR |
NXP Semiconductors | Active | — | — | — | — | — | — | — | — | — | — | — | — |