Transistörler - FET, MOSFET - Tekil
- Komponent
- 40,131
- Marka
- 50
Komponentler
10,000 sonuç · Sayfa 93/200| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSC190N15NS3GATMA1
MOSFET N-CH 150V 50A TDSON-8-1 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 125W (Tc) | N-Channel | — | 150 V | 50A (Tc) | 19mOhm @ 50A, 10V | 4V @ 90µA | 31 nC @ 10 V | 2420 pF @ 75 V | 8V, 10V | ±20V | — |
|
BSC196N10NSGATMA1
MOSFET N-CH 100V 8.5A/45A TDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 78W (Tc) | N-Channel | — | 100 V | 8.5A (Ta), 45A (Tc) | 19.6mOhm @ 45A, 10V | 4V @ 42µA | 34 nC @ 10 V | 2300 pF @ 50 V | 10V | ±20V | — |
|
BSC200P03LSG
P-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSC200P03LSGAUMA1
MOSFET P-CH 30V 9.9/12.5A 8TDSON |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 2.5W (Ta), 63W (Tc) | P-Channel | — | 30 V | 9.9A (Ta), 12.5A (Tc) | 20mOhm @ 12.5A, 10V | 2.2V @ 100µA | 48.5 nC @ 10 V | 2430 pF @ 15 V | 10V | ±25V | — |
|
BSC205N10LS G
MOSFET N-CH 100V 7.4A/45A TDSON |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 76W (Tc) | N-Channel | — | 100 V | 7.4A (Ta), 45A (Tc) | 20.5mOhm @ 45A, 10V | 2.4V @ 43µA | 41 nC @ 10 V | 2900 pF @ 50 V | 4.5V, 10V | ±20V | — |
|
BSC205N10LSG
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 76W (Tc) | N-Channel | — | 100 V | 7.4A (Ta), 45A (Tc) | 20.5mOhm @ 45A, 10V | 2.4V @ 43µA | 41 nC @ 10 V | 2900 pF @ 50 V | 4.5V, 10V | ±20V | — |
|
BSC205N10LSGATMA1
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSC220N20NSFDATMA1
MOSFET N-CH 200V 52A TSON-8 |
Infineon Technologies | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSON-8-3 | 214W (Tc) | N-Channel | — | 200 V | 52A (Tc) | 22mOhm @ 52A, 10V | 4V @ 137µA | 43 nC @ 10 V | 3680 pF @ 100 V | 10V | ±20V | — |
|
BSC22DN20NS3GATMA1
MOSFET N-CH 200V 7A TDSON-8-5 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-5 | 34W (Tc) | N-Channel | — | 200 V | 7A (Tc) | 225mOhm @ 3.5A, 10V | 4V @ 13µA | 5.6 nC @ 10 V | 430 pF @ 100 V | 10V | ±20V | — |
|
BSC240N12NS3 G
MOSFET N-CH 120V 37A TDSON-8-1 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 66W (Tc) | N-Channel | — | 120 V | 37A (Tc) | 24mOhm @ 31A, 10V | 4V @ 35µA | 27 nC @ 10 V | 1900 pF @ 60 V | 10V | ±20V | — |
|
BSC240N12NS3G
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 66W (Tc) | N-Channel | — | 120 V | 37A (Tc) | 24mOhm @ 31A, 10V | 4V @ 35µA | 27 nC @ 10 V | 1900 pF @ 60 V | 10V | ±20V | — |
|
BSC252N10NSFGATMA1
MOSFET N-CH 100V 7.2A/40A TDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 78W (Tc) | N-Channel | — | 100 V | 7.2A (Ta), 40A (Tc) | 25.2mOhm @ 20A, 10V | 4V @ 43µA | 17 nC @ 10 V | 1100 pF @ 50 V | 10V | ±20V | — |
|
BSC265N10LSFGATMA1
MOSFET N-CH 100V 6.5A/40A TDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 78W (Tc) | N-Channel | — | 100 V | 6.5A (Ta), 40A (Tc) | 26.5mOhm @ 20A, 10V | 2.4V @ 43µA | 21 nC @ 10 V | 1600 pF @ 50 V | 4.5V, 10V | ±20V | — |
|
BSC320N20NS3GATMA1
MOSFET N-CH 200V 36A TDSON-8 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 125W (Tc) | N-Channel | — | 200 V | 36A (Tc) | 32mOhm @ 36A, 10V | 4V @ 90µA | 29 nC @ 10 V | 2350 pF @ 100 V | 10V | ±20V | — |
|
BSC340N08NS3GATMA1
MOSFET N-CH 80V 7A/23A TDSON-8-5 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-5 | 2.5W (Ta), 32W (Tc) | N-Channel | — | 80 V | 7A (Ta), 23A (Tc) | 34mOhm @ 12A, 10V | 3.5V @ 12µA | 9.1 nC @ 10 V | 756 pF @ 40 V | 6V, 10V | ±20V | — |
|
BSC350N20NSFDATMA1
MOSFET N-CH 200V 35A TDSON-8-1 |
Infineon Technologies | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 150W (Tc) | N-Channel | — | 200 V | 35A (Tc) | 35mOhm @ 35A, 10V | 4V @ 90µA | 30 nC @ 10 V | 2410 pF @ 100 V | 10V | ±20V | — |
|
BSC360N15NS3GATMA1
MOSFET N-CH 150V 33A 8TDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 74W (Tc) | N-Channel | — | 150 V | 33A (Tc) | 36mOhm @ 25A, 10V | 4V @ 45µA | 15 nC @ 10 V | 1190 pF @ 75 V | 8V, 10V | ±20V | — |
|
BSC430N25NSFDATMA1
MOSFET N-CH 250V TSON-8 |
Infineon Technologies | Active | — | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSON-8-3 | — | N-Channel | — | 250 V | 36A (Tc) | — | — | — | — | — | — | — |
|
BSC440N10NS3GATMA1
MOSFET N-CH 100V 5.3A/18A TDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 29W (Tc) | N-Channel | — | 100 V | 5.3A (Ta), 18A (Tc) | 44mOhm @ 12A, 10V | 3.5V @ 12µA | 10.8 nC @ 10 V | 810 pF @ 50 V | 6V, 10V | ±20V | — |
|
BSC500N20NS3GATMA1
MOSFET N-CH 200V 24A TDSON-8 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 96W (Tc) | N-Channel | — | 200 V | 24A (Tc) | 50mOhm @ 22A, 10V | 4V @ 60µA | 15 nC @ 10 V | 1580 pF @ 100 V | 10V | ±20V | — |
|
BSC520N15NS3GATMA1
MOSFET N-CH 150V 21A TDSON-8-5 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-5 | 57W (Tc) | N-Channel | — | 150 V | 21A (Tc) | 52mOhm @ 18A, 10V | 4V @ 35µA | 12 nC @ 10 V | 890 pF @ 75 V | 8V, 10V | ±20V | — |
|
BSC600N25NS3GATMA1
MOSFET N-CH 250V 25A TDSON-8-1 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 125W (Tc) | N-Channel | — | 250 V | 25A (Tc) | 60mOhm @ 25A, 10V | 4V @ 90µA | 29 nC @ 10 V | 2350 pF @ 100 V | 10V | ±20V | — |
|
BSC670N25NSFDATMA1
MOSFET N-CH 250V 24A TDSON-8-1 |
Infineon Technologies | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 150W (Tc) | N-Channel | — | 250 V | 24A (Tc) | 67mOhm @ 24A, 10V | 4V @ 90µA | 30 nC @ 10 V | 2410 pF @ 125 V | 10V | ±20V | — |
|
BSC882N03LS G
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSC882N03LSGATMA1
MOSFET N-CH 34V 8TDSON |
Infineon Technologies | Not For New Designs | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | — | N-Channel | — | 34 V | — | 4.2mOhm @ 30A, 10V | 2.2V @ 250µA | 46 nC @ 10 V | 3700 pF @ 15 V | 10V | ±20V | — |
|
BSC882N03MSG
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSC882N03MSGATMA1
MOSFET N-CH 34V 22A/100A TDSON |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 2.5W (Ta), 69W (Tc) | N-Channel | — | 34 V | 22A (Ta), 100A (Tc) | 2.6mOhm @ 30A, 10V | 2V @ 250µA | 55 nC @ 10 V | 4300 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSC883N03LS G
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSC883N03LSGATMA1
MOSFET N-CH 34V 17A/98A TDSON |
Infineon Technologies | Not For New Designs | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 2.5W (Ta), 57W (Tc) | N-Channel | — | 34 V | 17A (Ta), 98A (Tc) | 3.8mOhm @ 30A, 10V | 2.2V @ 250µA | 34 nC @ 10 V | 2800 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSC883N03MSG
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSC883N03MSGATMA1
MOSFET N-CH 34V 19A/98A TDSON |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 2.5W (Ta), 57W (Tc) | N-Channel | — | 34 V | 19A (Ta), 98A (Tc) | 3.8mOhm @ 30A, 10V | 2V @ 250µA | 41 nC @ 10 V | 3200 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSC884N03MS G
MOSFET N-CH 34V 17A/85A TDSON |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 2.5W (Ta), 50W (Tc) | N-Channel | — | 34 V | 17A (Ta), 85A (Tc) | 4.5mOhm @ 30A, 10V | 2V @ 250µA | 34 nC @ 10 V | 2700 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSC884N03MSG
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 2.5W (Ta), 50W (Tc) | N-Channel | — | 34 V | 17A (Ta), 85A (Tc) | 4.5mOhm @ 30A, 10V | 2V @ 250µA | 34 nC @ 10 V | 2700 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSC886N03LS G
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSC886N03LSGATMA1
MOSFET N-CH 30V 13A/65A TDSON |
Infineon Technologies | Not For New Designs | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 2.5W (Ta), 39W (Tc) | N-Channel | — | 30 V | 13A (Ta), 65A (Tc) | 6mOhm @ 30A, 10V | 2.2V @ 250µA | 26 nC @ 10 V | 2100 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSC8899N03MS
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSC889N03LSG
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSC889N03LSGATMA1
MOSFET N-CH 30V 13A/45A TDSON |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 2.5W (Ta), 28W (Tc) | N-Channel | — | 30 V | 13A (Ta), 45A (Tc) | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 16 nC @ 10 V | 1300 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSC889N03MSG
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSC889N03MSGATMA1
MOSFET N-CH 30V 12A 44A TDSON |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 2.5W (Ta), 28W (Tc) | N-Channel | — | 30 V | 12A (Ta) 44A (Tc) | 9.1mOhm @ 30A, 10V | 2V @ 250µA | 20 nC @ 10 V | 1500 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSC900N20NS3GATMA1
MOSFET N-CH 200V 15.2A TDSON-8 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-5 | 62.5W (Tc) | N-Channel | — | 200 V | 15.2A (Tc) | 90mOhm @ 7.6A, 10V | 4V @ 30µA | 11.6 nC @ 10 V | 920 pF @ 100 V | 10V | ±20V | — |
|
BSD214SN L6327
MOSFET N-CH 20V 1.5A SOT363-6 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | MOSFET (Metal Oxide) | PG-SOT363-6 | 500mW (Ta) | N-Channel | — | 20 V | 1.5A (Ta) | 140mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.8 nC @ 5 V | 143 pF @ 10 V | 2.5V, 4.5V | ±12V | — |
|
BSD214SNH6327
BSD314 - 250V-600V SMALL SIGNAL/ |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSD214SNH6327XTSA1
MOSFET N-CH 20V 1.5A SOT363-6 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | MOSFET (Metal Oxide) | PG-SOT363-6 | 500mW (Ta) | N-Channel | — | 20 V | 1.5A (Ta) | 140mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.8 nC @ 5 V | 143 pF @ 10 V | 2.5V, 4.5V | ±12V | — |
|
BSD214SNL6327
SMALL SIGNAL N-CHANNEL MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSD314SPEH6327XTSA1
MOSFET P-CH 30V 1.5A SOT363-6 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | MOSFET (Metal Oxide) | PG-SOT363-6 | 500mW (Ta) | P-Channel | — | 30 V | 1.5A (Ta) | 140mOhm @ 1.5A, 10V | 2V @ 6.3µA | 2.9 nC @ 10 V | 294 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSD314SPEL6327
P-CHANNEL MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSD314SPEL6327HTSA1
MOSFET P-CH 30V 1.5A SOT363-6 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | MOSFET (Metal Oxide) | PG-SOT363-6 | 500mW (Ta) | P-Channel | — | 30 V | 1.5A (Ta) | 140mOhm @ 1.5A, 10V | 2V @ 6.3µA | 2.9 nC @ 10 V | 294 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSD316NL6327
SMALL SIGNAL N-CHANNEL MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSD316SNH6327XTSA1
MOSFET N-CH 30V 1.4A SOT363-6 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | MOSFET (Metal Oxide) | PG-SOT363-6 | 500mW (Ta) | N-Channel | — | 30 V | 1.4A (Ta) | 160mOhm @ 1.4A, 10V | 2V @ 3.7µA | 0.6 nC @ 5 V | 94 pF @ 15 V | 4.5V, 10V | ±20V | — |