Transistörler - FET, MOSFET - Tekil
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Komponentler
10,000 sonuç · Sayfa 95/200| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSL207SP
MOSFET P-CH 20V 6A TSOP-6 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | PG-TSOP6-6 | 2W (Ta) | P-Channel | — | 20 V | 6A (Ta) | 41mOhm @ 6A, 4.5V | 1.2V @ 40µA | 20 nC @ 4.5 V | 1007 pF @ 15 V | 2.5V, 4.5V | ±12V | — |
|
BSL207SPH6327XTSA1
MOSFET P-CH 20V 6A TSOP-6 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | PG-TSOP6-6 | 2W (Ta) | P-Channel | — | 20 V | 6A (Ta) | 41mOhm @ 6A, 4.5V | 1.2V @ 40µA | 20 nC @ 10 V | 1007 pF @ 15 V | 2.5V, 4.5V | ±12V | — |
|
BSL207SPL6327HTSA1
MOSFET P-CH 20V 6A TSOP-6 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | PG-TSOP6-6 | 2W (Ta) | P-Channel | — | 20 V | 6A (Ta) | 41mOhm @ 6A, 4.5V | 1.2V @ 40µA | 20 nC @ 4.5 V | 1007 pF @ 15 V | 2.5V, 4.5V | ±12V | — |
|
BSL211SP
MOSFET P-CH 20V 4.7A TSOP-6 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | PG-TSOP6-6 | 2W (Ta) | P-Channel | — | 20 V | 4.7A (Ta) | 67mOhm @ 4.7A, 4.5V | 1.2V @ 25µA | 12.4 nC @ 4.5 V | 654 pF @ 15 V | 2.5V, 4.5V | ±12V | — |
|
BSL211SPH6327XTSA1
MOSFET P-CH 20V 4.7A TSOP-6 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | PG-TSOP6-6 | 2W (Ta) | P-Channel | — | 20 V | 4.7A (Ta) | 67mOhm @ 4.7A, 4.5V | 1.2V @ 25µA | 12.4 nC @ 10 V | 654 pF @ 15 V | 2.5V, 4.5V | ±12V | — |
|
BSL211SPL6327
P-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSL211SPL6327HTSA1
MOSFET P-CH 20V 4.7A TSOP-6 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | PG-TSOP6-6 | 2W (Ta) | P-Channel | — | 20 V | 4.7A (Ta) | 67mOhm @ 4.7A, 4.5V | 1.2V @ 25µA | 12.4 nC @ 4.5 V | 654 pF @ 15 V | 2.5V, 4.5V | ±12V | — |
|
BSL211SPT
MOSFET P-CH 20V 4.7A TSOP-6 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | PG-TSOP6-6 | 2W (Ta) | P-Channel | — | 20 V | 4.7A (Ta) | 67mOhm @ 4.7A, 4.5V | 1.2V @ 25µA | 12.4 nC @ 4.5 V | 654 pF @ 15 V | 2.5V, 4.5V | ±12V | — |
|
BSL296SNH6327XTSA1
MOSFET N-CH 100V 1.4A TSOP-6 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | PG-TSOP6-6 | 2W (Ta) | N-Channel | — | 100 V | 1.4A (Ta) | 460mOhm @ 1.26A, 10V | 1.8V @ 100µA | 4 nC @ 5 V | 152.7 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSL302SNH6327XTSA1
MOSFET N-CH 30V 7.1A TSOP-6 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | PG-TSOP6-6 | 2W (Ta) | N-Channel | — | 30 V | 7.1A (Ta) | 25mOhm @ 7.1A, 10V | 2V @ 30µA | 6.6 nC @ 5 V | 750 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSL302SNL6327
SMALL SIGNAL N-CHANNEL MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSL302SNL6327HTSA1
MOSFET N-CH 30V 7.1A TSOP-6 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | PG-TSOP6-6 | 2W (Ta) | N-Channel | — | 30 V | 7.1A (Ta) | 25mOhm @ 7.1A, 10V | 2V @ 30µA | 6.6 nC @ 5 V | 750 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSL303SPEH6327XTSA1
MOSFET P-CH 30V 6.3A TSOP-6 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | PG-TSOP6-6 | 2W (Ta) | P-Channel | — | 30 V | 6.3A (Ta) | 33mOhm @ 6.3A, 10V | 2V @ 30µA | 20.9 nC @ 10 V | 1401 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSL305SPEH6327XTSA1
MOSFET P-CH 30V 5.3A TSOP-6 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | PG-TSOP6-6 | 2W (Ta) | P-Channel | — | 30 V | 5.3A (Ta) | 45mOhm @ 5.3A, 10V | 2V @ 20µA | 14 nC @ 10 V | 939 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSL307SP
MOSFET P-CH 30V 5.5A TSOP-6 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | PG-TSOP6-6 | 2W (Ta) | P-Channel | — | 30 V | 5.5A (Ta) | 43mOhm @ 5.5A, 10V | 2V @ 40µA | 29 nC @ 10 V | 805 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSL307SPH6327XTSA1
MOSFET P-CH 30V 5.5A 6TSOP |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | SC-74, SOT-457 | MOSFET (Metal Oxide) | PG-TSOP-6-1 | 2W (Ta) | P-Channel | — | 30 V | 5.5A (Ta) | 43mOhm @ 5.5A, 10V | 2V @ 40µA | 29 nC @ 10 V | 805 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSL307SPH6327XTSA1
SMALL SIGNAL MOSFETS |
Rochester Electronics | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSL307SPL6327HTSA1
MOSFET P-CH 30V 5.5A TSOP-6 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | PG-TSOP6-6 | 2W (Ta) | P-Channel | — | 30 V | 5.5A (Ta) | 43mOhm @ 5.5A, 10V | 2V @ 40µA | 29 nC @ 10 V | 805 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSL307SPT
MOSFET P-CH 30V 5.5A TSOP-6 |
Infineon Technologies | Market | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | PG-TSOP6-6 | 2W (Ta) | P-Channel | — | 30 V | 5.5A (Ta) | 43mOhm @ 5.5A, 10V | 2V @ 40µA | 29 nC @ 10 V | 805 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSL372SNH6327XTSA1
MOSFET N-CH 100V 2A TSOP-6 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | PG-TSOP6-6 | 2W (Ta) | N-Channel | — | 100 V | 2A (Ta) | 220mOhm @ 2A, 10V | 1.8V @ 218µA | 14.3 nC @ 10 V | 329 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSL373SNH6327XTSA1
MOSFET N-CH 100V 2A TSOP-6 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | PG-TSOP6-6 | 2W (Ta) | N-Channel | — | 100 V | 2A (Ta) | 230mOhm @ 2A, 10V | 4V @ 218µA | 9.3 nC @ 10 V | 265 pF @ 25 V | 10V | ±20V | — |
|
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | PG-TSOP6-6 | 2W (Ta) | N-Channel | — | 60 V | 4.5A (Ta) | 60mOhm @ 4.5A, 10V | 2.3V @ 15µA | 5.6 nC @ 5 V | 657 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSL716SNH6327XTSA1
MOSFET N-CH 75V 2.5A TSOP-6 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | PG-TSOP6-6 | 2W (Ta) | N-Channel | — | 75 V | 2.5A (Ta) | 150mOhm @ 2.5A, 10V | 1.8V @ 218µA | 13.1 nC @ 10 V | 315 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSL802SNH6327XTSA1
MOSFET N-CH 20V 7.5A TSOP-6 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | PG-TSOP6-6 | 2W (Ta) | N-Channel | — | 20 V | 7.5A (Ta) | 22mOhm @ 7.5A, 2.5V | 0.75V @ 30µA | 4.7 nC @ 2.5 V | 1347 pF @ 10 V | 1.8V, 2.5V | ±8V | — |
|
BSL802SNL6327HTSA1
MOSFET N-CH 20V 7.5A TSOP-6 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | PG-TSOP6-6 | 2W (Ta) | N-Channel | — | 20 V | 7.5A (Ta) | 22mOhm @ 7.5A, 2.5V | 750mV @ 30µA | 4.7 nC @ 2.5 V | 1347 pF @ 10 V | 1.8V, 2.5V | ±8V | — |
|
BSM180C12P2E202
SICFET N-CH 1200V 204A MODULE |
ROHM Semiconductor | Active | 175°C (TJ) | Chassis Mount | Module | SiCFET (Silicon Carbide) | Module | 1360W (Tc) | N-Channel | — | 1200 V | 204A (Tc) | — | 4V @ 35.2mA | — | 20000 pF @ 10 V | — | +22V, -6V | — |
|
BSM180C12P3C202
SICFET N-CH 1200V 180A MODULE |
ROHM Semiconductor | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | SiCFET (Silicon Carbide) | Module | 880W (Tc) | N-Channel | — | 1200 V | 180A (Tc) | — | 5.6V @ 50mA | — | 9000 pF @ 10 V | — | +22V, -4V | — |
|
BSM300C12P3E201
SICFET N-CH 1200V 300A MODULE |
ROHM Semiconductor | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | SiCFET (Silicon Carbide) | Module | 1360W (Tc) | N-Channel | — | 1200 V | 300A (Tc) | — | 5.6V @ 80mA | — | 15000 pF @ 10 V | — | +22V, -4V | — |
|
BSM300C12P3E301
SICFET N-CH 1200V 300A MODULE |
ROHM Semiconductor | Active | -40°C ~ 150°C (TJ) | — | Module | SiCFET (Silicon Carbide) | Module | 1360W (Tc) | N-Channel | Standard | 1200 V | 300A (Tc) | — | 5.6V @ 80mA | — | 1500 pF @ 10 V | — | +22V, -4V | — |
|
BSM400C12P3G202
SICFET N-CH 1200V 400A MODULE |
ROHM Semiconductor | Active | 175°C (TJ) | Chassis Mount | Module | SiCFET (Silicon Carbide) | Module | 1570W (Tc) | N-Channel | — | 1200 V | 400A (Tc) | — | 5.6V @ 106.8mA | — | 17000 pF @ 10 V | — | +22V, -4V | — |
|
BSM600C12P3G201
SICFET N-CH 1200V 600A MODULE |
ROHM Semiconductor | Active | 175°C (TJ) | Chassis Mount | Module | SiCFET (Silicon Carbide) | Module | 2460W (Tc) | N-Channel | — | 1200 V | 600A (Tc) | — | 5.6V @ 182mA | — | 28000 pF @ 10 V | — | +22V, -4V | — |
|
BSN20,215
MOSFET N-CH 50V 173MA TO236AB |
Nexperia | Obsolete | -65°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | TO-236AB | 830mW (Tc) | N-Channel | — | 50 V | 173mA (Ta) | 15Ohm @ 100mA, 10V | 1V @ 1mA | — | 25 pF @ 10 V | 5V, 10V | ±20V | — |
|
BSN20,235
MOSFET N-CH 50V 173MA TO236AB |
Nexperia | Obsolete | -65°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | TO-236AB | 830mW (Tc) | N-Channel | — | 50 V | 173mA (Ta) | 15Ohm @ 100mA, 10V | 1V @ 1mA | — | 25 pF @ 10 V | 5V, 10V | ±20V | — |
|
BSN20-7
MOSFET N-CH 50V 500MA SOT23 |
Diodes Incorporated | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | SOT-23-3 | 600mW (Ta) | N-Channel | — | 50 V | 500mA (Ta) | 1.8Ohm @ 220mA, 10V | 1.5V @ 250µA | 0.8 nC @ 10 V | 40 pF @ 10 V | 4.5V, 10V | ±20V | — |
|
BSN20BK215
SMALL SIGNAL N-CHANNEL MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSN20BKR
MOSFET N-CH 60V 265MA TO236AB |
Nexperia | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | TO-236AB | 310mW (Ta) | N-Channel | — | 60 V | 265mA (Ta) | 2.8Ohm @ 200mA, 10V | 1.4V @ 250µA | 0.49 nC @ 4.5 V | 20.2 pF @ 30 V | 10V | ±20V | — |
|
BSN20Q-7
MOSFET N-CH 50V 500MA SOT23 |
Diodes Incorporated | Active | — | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | SOT-23-3 | 600mW (Ta), 920mW (Tc) | N-Channel | — | 50 V | 500mA (Ta) | 1.8Ohm @ 220mA, 10V | 1.5V @ 250µA | 0.8 nC @ 10 V | 40 pF @ 10 V | 4.5V, 10V | ±20V | — |
|
BSN254,126
MOSFET N-CH 250V 310MA TO92-3 |
NXP Semiconductors | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | MOSFET (Metal Oxide) | TO-92-3 | 1W (Ta) | N-Channel | — | 250 V | 310mA (Ta) | 5Ohm @ 300mA, 10V | 2V @ 1mA | — | 120 pF @ 25 V | 2.4V, 10V | ±20V | — |
|
BSN254A,126
MOSFET N-CH 250V 310MA TO92-3 |
NXP Semiconductors | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | MOSFET (Metal Oxide) | TO-92-3 | 1W (Ta) | N-Channel | — | 250 V | 310mA (Ta) | 5Ohm @ 300mA, 10V | 2V @ 1mA | — | 120 pF @ 25 V | 2.4V, 10V | ±20V | — |
|
BSN304,126
MOSFET N-CH 300V 300MA TO92-3 |
NXP Semiconductors | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | MOSFET (Metal Oxide) | TO-92-3 | 1W (Ta) | N-Channel | — | 300 V | 300mA (Ta) | 6Ohm @ 250mA, 10V | 2V @ 1mA | — | 120 pF @ 25 V | 2.4V, 10V | ±20V | — |
|
BSO033N03MSGXUMA1
MOSFET N-CH 30V 17A 8DSO |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | — | MOSFET (Metal Oxide) | PG-DSO-8 | 1.56W (Ta) | N-Channel | — | 30 V | 17A (Ta) | 3.3mOhm @ 22A, 10V | 2V @ 250µA | 124 nC @ 10 V | 9600 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSO040N03MSGXUMA1
MOSFET N-CH 30V 16A 8DSO |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | — | MOSFET (Metal Oxide) | PG-DSO-8 | 1.56W (Ta) | N-Channel | — | 30 V | 16A (Ta) | 4mOhm @ 20A, 10V | 2V @ 250µA | 73 nC @ 10 V | 5700 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSO040N03MSGXUMA1
BSO040N03MS - 30V N-CHANNEL POWE |
Rochester Electronics | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSO051N03MS G
MOSFET N-CH 30V 14A 8DSO |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | — | MOSFET (Metal Oxide) | PG-DSO-8 | 1.56W (Ta) | N-Channel | — | 30 V | 14A (Ta) | 5.1mOhm @ 18A, 10V | 2V @ 250µA | 55 nC @ 10 V | 4300 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSO051N03MSGXUMA1
SMALL SIGNAL FIELD-EFFECT TRANSI |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSO052N03S
MOSFET N-CH 30V 14A 8DSO |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | — | MOSFET (Metal Oxide) | PG-DSO-8 | 1.56W (Ta) | N-Channel | — | 30 V | 14A (Ta) | 5.2mOhm @ 17A, 10V | 2V @ 70µA | 43 nC @ 5 V | 5530 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSO064N03S
MOSFET N-CH 30V 12A 8DSO |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | — | MOSFET (Metal Oxide) | PG-DSO-8 | 1.56W (Ta) | N-Channel | — | 30 V | 12A (Ta) | 6.4mOhm @ 16A, 10V | 2V @ 50µA | 28 nC @ 5 V | 3620 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSO065N03MSGXUMA1
MOSFET N-CH 30V 13A 8DSO |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | — | MOSFET (Metal Oxide) | PG-DSO-8 | 1.56W (Ta) | N-Channel | — | 30 V | 13A (Ta) | 6.5mOhm @ 16A, 10V | 2V @ 250µA | 40 nC @ 10 V | 3100 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSO072N03S
MOSFET N-CH 30V 12A 8DSO |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | — | MOSFET (Metal Oxide) | PG-DSO-8 | 1.56W (Ta) | N-Channel | — | 30 V | 12A (Ta) | 6.8mOhm @ 15A, 10V | 2V @ 45µA | 25 nC @ 5 V | 3230 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSO080P03NS3EGXUMA1
MOSFET P-CH 30V 12A 8DSO |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | — | MOSFET (Metal Oxide) | PG-DSO-8 | 1.6W (Ta) | P-Channel | — | 30 V | 12A (Ta) | 8mOhm @ 14.8A, 10V | 3.1V @ 150µA | 81 nC @ 10 V | 6750 pF @ 15 V | 6V, 10V | ±25V | — |