Transistörler - FET, MOSFET - Tekil
- Komponent
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Komponentler
10,000 sonuç · Sayfa 98/200| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSP230,135
MOSFET P-CH 300V 210MA SOT223 |
Nexperia | Active | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | SOT-223 | 1.5W (Ta) | P-Channel | — | 300 V | 210mA (Ta) | 17Ohm @ 170mA, 10V | 2.55V @ 1mA | — | 90 pF @ 25 V | 10V | ±20V | — |
|
BSP250,115
MOSFET P-CH 30V 3A SOT223 |
Nexperia | Active | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | SOT-223 | 1.65W (Ta) | P-Channel | — | 30 V | 3A (Tc) | 250mOhm @ 1A, 10V | 2.8V @ 1mA | 25 nC @ 10 V | 250 pF @ 20 V | 10V | ±20V | — |
|
BSP250,135
MOSFET P-CH 30V 3A SOT223 |
Nexperia | Active | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | SOT-223 | 1.65W (Ta) | P-Channel | — | 30 V | 3A (Tc) | 250mOhm @ 1A, 10V | 2.8V @ 1mA | 25 nC @ 10 V | 250 pF @ 20 V | 10V | ±20V | — |
|
BSP254A,126
MOSFET P-CH 250V 200MA TO92-3 |
NXP Semiconductors | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | MOSFET (Metal Oxide) | TO-92-3 | 1W (Ta) | P-Channel | — | 250 V | 200mA (Ta) | 15Ohm @ 200mA, 10V | 2.8V @ 1mA | — | 90 pF @ 25 V | 10V | ±20V | — |
|
BSP295E6327
MOSFET N-CH 60V 1.8A SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 60 V | 1.8A (Ta) | 300mOhm @ 1.8A, 10V | 1.8V @ 400µA | 17 nC @ 10 V | 368 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP295E6327T
MOSFET N-CH 60V 1.8A SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 60 V | 1.8A (Ta) | 300mOhm @ 1.8A, 10V | 1.8V @ 400µA | 17 nC @ 10 V | 368 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP295H6327XTSA1
MOSFET N-CH 60V 1.8A SOT223-4 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 60 V | 1.8A (Ta) | 300mOhm @ 1.8A, 10V | 1.8V @ 400µA | 17 nC @ 10 V | 368 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP295L6327
SMALL-SIGNAL N-CHANNEL MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSP295L6327HTSA1
MOSFET N-CH 60V 1.8A SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4-21 | 1.8W (Ta) | N-Channel | — | 60 V | 1.8A (Ta) | 300mOhm @ 1.8A, 10V | 1.8V @ 400µA | 17 nC @ 10 V | 368 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP296 E6433
MOSFET N-CH 100V 1.1A SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.79W (Ta) | N-Channel | — | 100 V | 1.1A (Ta) | 700mOhm @ 1.1A, 10V | 1.8V @ 400µA | 17.2 nC @ 10 V | 364 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP296E6327
MOSFET N-CH 100V 1.1A SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.79W (Ta) | N-Channel | — | 100 V | 1.1A (Ta) | 700mOhm @ 1.1A, 10V | 1.8V @ 400µA | 17.2 nC @ 10 V | 364 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP296L6327HTSA1
MOSFET N-CH 100V 1.1A SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.79W (Ta) | N-Channel | — | 100 V | 1.1A (Ta) | 700mOhm @ 1.1A, 10V | 1.8V @ 400µA | 17.2 nC @ 10 V | 364 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP296L6433
SMALL-SIGNAL N-CHANNEL MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSP296L6433HTMA1
MOSFET N-CH 100V 1.1A SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.79W (Ta) | N-Channel | — | 100 V | 1.1A (Ta) | 700mOhm @ 1.1A, 10V | 1.8V @ 400µA | 17.2 nC @ 10 V | 364 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP296NH6327XTSA1
MOSFET N-CH 100V 1.2A SOT223-4 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 100 V | 1.2A (Ta) | 600mOhm @ 1.2A, 10V | 1.8V @ 100µA | 6.7 nC @ 10 V | 152.7 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP296NH6433XTMA1
MOSFET N-CH 100V 1.2A SOT223-4 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 100 V | 1.2A (Ta) | 600mOhm @ 1.2A, 10V | 1.8V @ 100µA | 6.7 nC @ 10 V | 152.7 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP296NL6327HTSA1
MOSFET N-CH 100V 1.2A SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 100 V | 1.2A (Ta) | 600mOhm @ 1.2A, 10V | 1.8V @ 100µA | 6.7 nC @ 10 V | 152.7 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP297 E6327
MOSFET N-CH 200V 660MA SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 200 V | 660mA (Ta) | 1.8Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1 nC @ 10 V | 357 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP297H6327XTSA1
MOSFET N-CH 200V 660MA SOT223-4 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 200 V | 660mA (Ta) | 1.8Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1 nC @ 10 V | 357 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP297L6327
SMALL-SIGNAL N-CHANNEL MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSP297L6327HTSA1
MOSFET N-CH 200V 660MA SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4-21 | 1.8W (Ta) | N-Channel | — | 200 V | 660mA (Ta) | 1.8Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1 nC @ 10 V | 357 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP298 E6327
MOSFET N-CH 400V 500MA SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 400 V | 500mA (Ta) | 3Ohm @ 500mA, 10V | 4V @ 1mA | — | 400 pF @ 25 V | 10V | ±20V | — |
|
BSP298H6327XUSA1
MOSFET N-CH 400V 500MA SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 400 V | 500mA (Ta) | 3Ohm @ 500mA, 10V | 4V @ 1mA | — | 400 pF @ 25 V | 10V | ±20V | — |
|
BSP298L6327HUSA1
MOSFET N-CH 400V 500MA SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4-21 | 1.8W (Ta) | N-Channel | — | 400 V | 500mA (Ta) | 3Ohm @ 500mA, 10V | 4V @ 1mA | — | 400 pF @ 25 V | 10V | ±20V | — |
|
BSP299 E6327
MOSFET N-CH 500V 400MA SOT223-4 |
Infineon Technologies | Market | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4-21 | 1.8W (Ta) | N-Channel | — | 500 V | 400mA (Ta) | 4Ohm @ 400mA, 10V | 4V @ 1mA | — | 400 pF @ 25 V | 10V | ±20V | — |
|
BSP299H6327XUSA1
MOSFET N-CH 500V 400MA SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 500 V | 400mA (Ta) | 4Ohm @ 400mA, 10V | 4V @ 1mA | — | 400 pF @ 25 V | 10V | ±20V | — |
|
BSP299L6327
SMALL-SIGNAL N-CHANNEL MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSP299L6327HUSA1
MOSFET N-CH 500V 400MA SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4-21 | 1.8W (Ta) | N-Channel | — | 500 V | 400mA (Ta) | 4Ohm @ 400mA, 10V | 4V @ 1mA | — | 400 pF @ 25 V | 10V | ±20V | — |
|
BSP300 E6327
MOSFET N-CH 800V 190MA SOT223-4 |
Infineon Technologies | Market | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4-21 | 1.8W (Ta) | N-Channel | — | 800 V | 190mA (Ta) | 20Ohm @ 190mA, 10V | 4V @ 1mA | — | 230 pF @ 25 V | 10V | ±20V | — |
|
BSP300H6327XUSA1
MOSFET N-CH 800V 190MA SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 800 V | 190mA (Ta) | 20Ohm @ 190mA, 10V | 4V @ 1mA | — | 230 pF @ 25 V | 10V | ±20V | — |
|
BSP300L6327HUSA1
MOSFET N-CH 800V 190MA SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4-21 | 1.8W (Ta) | N-Channel | — | 800 V | 190mA (Ta) | 20Ohm @ 190mA, 10V | 4V @ 1mA | — | 230 pF @ 25 V | 10V | ±20V | — |
|
BSP304A,126
MOSFET P-CH 300V 170MA TO92-3 |
NXP Semiconductors | Obsolete | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | MOSFET (Metal Oxide) | TO-92-3 | 1W (Ta) | P-Channel | — | 300 V | 170mA (Ta) | 17Ohm @ 170mA, 10V | 2.55V @ 1mA | — | 90 pF @ 25 V | 10V | ±20V | — |
|
BSP315
MOSFET P-CH 50V 1A SOT223 |
Rochester Electronics | Obsolete | 150°C | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | SOT-223 | 1.8W | P-Channel | — | 50 V | 1A | 0.8Ohms | — | — | — | — | — | — |
|
BSP315P-E6327
MOSFET P-CH 60V 1.17A SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | P-Channel | — | 60 V | 1.17A (Ta) | 800mOhm @ 1.17A, 10V | 2V @ 160µA | 7.8 nC @ 10 V | 160 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP315PE6327T
MOSFET P-CH 60V 1.17A SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | P-Channel | — | 60 V | 1.17A (Ta) | 800mOhm @ 1.17A, 10V | 2V @ 160µA | 7.8 nC @ 10 V | 160 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP315PH6327XTSA1
MOSFET P-CH 60V 1.17A SOT223-4 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | P-Channel | — | 60 V | 1.17A (Ta) | 800mOhm @ 1.17A, 10V | 2V @ 160µA | 7.8 nC @ 10 V | 160 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP315PL6327HTSA1
MOSFET P-CH 60V 1.17A SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4-21 | 1.8W (Ta) | P-Channel | — | 60 V | 1.17A (Ta) | 800mOhm @ 1.17A, 10V | 2V @ 160µA | 7.8 nC @ 10 V | 160 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP316PE6327
MOSFET P-CH 100V 680MA SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | P-Channel | — | 100 V | 680mA (Ta) | 1.8Ohm @ 680mA, 10V | 2V @ 170µA | 6.4 nC @ 10 V | 146 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP316PE6327T
MOSFET P-CH 100V 680MA SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | P-Channel | — | 100 V | 680mA (Ta) | 1.8Ohm @ 680mA, 10V | 2V @ 170µA | 6.4 nC @ 10 V | 146 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP316PH6327XTSA1
MOSFET P-CH 100V 680MA SOT223-4 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | P-Channel | — | 100 V | 680mA (Ta) | 1.8Ohm @ 680mA, 10V | 2V @ 170µA | 6.4 nC @ 10 V | 146 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP316PL6327
P-CHANNEL MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSP316PL6327HTSA1
MOSFET P-CH 100V 680MA SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4-21 | 1.8W (Ta) | P-Channel | — | 100 V | 680mA (Ta) | 1.8Ohm @ 680mA, 10V | 2V @ 170µA | 6.4 nC @ 10 V | 146 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP317PE6327
MOSFET P-CH 250V 430MA SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | P-Channel | — | 250 V | 430mA (Ta) | 4Ohm @ 430mA, 10V | 2V @ 370µA | 15.1 nC @ 10 V | 262 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP317PE6327T
MOSFET P-CH 250V 430MA SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | P-Channel | — | 250 V | 430mA (Ta) | 4Ohm @ 430mA, 10V | 2V @ 370µA | 15.1 nC @ 10 V | 262 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP317PH6327XTSA1
MOSFET P-CH 250V 430MA SOT223-4 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | P-Channel | — | 250 V | 430mA (Ta) | 4Ohm @ 430mA, 10V | 2V @ 370µA | 15.1 nC @ 10 V | 262 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP317PL6327
P-CHANNEL MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSP317PL6327HTSA1
MOSFET P-CH 250V 430MA SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4-21 | 1.8W (Ta) | P-Channel | — | 250 V | 430mA (Ta) | 4Ohm @ 430mA, 10V | 2V @ 370µA | 15.1 nC @ 10 V | 262 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP318S E6327
MOSFET N-CH 60V 2.6A SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 60 V | 2.6A (Ta) | 90mOhm @ 2.6A, 10V | 2V @ 20µA | 20 nC @ 10 V | 380 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP318SH6327XTSA1
MOSFET N-CH 60V 2.6A SOT223-4 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 60 V | 2.6A (Tj) | 90mOhm @ 2.6A, 10V | 2V @ 20µA | 20 nC @ 10 V | 380 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP318SL6327HTSA1
MOSFET N-CH 60V 2.6A SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4-21 | 1.8W (Ta) | N-Channel | — | 60 V | 2.6A (Ta) | 90mOhm @ 2.6A, 10V | 2V @ 20µA | 20 nC @ 10 V | 380 pF @ 25 V | 4.5V, 10V | ±20V | — |