Transistörler - FET, MOSFET - Tekil
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Komponentler
10,000 sonuç · Sayfa 99/200| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSP320S E6327
MOSFET N-CH 60V 2.9A SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 60 V | 2.9A (Ta) | 120mOhm @ 2.9A, 10V | 4V @ 20µA | 12 nC @ 10 V | 340 pF @ 25 V | 10V | ±20V | — |
|
BSP320S E6433
MOSFET N-CH 60V 2.9A SOT223-4 |
Infineon Technologies | Market | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 60 V | 2.9A (Ta) | 120mOhm @ 2.9A, 10V | 4V @ 20µA | 12 nC @ 10 V | 340 pF @ 25 V | 10V | ±20V | — |
|
BSP320SH6327XTSA1
MOSFET N-CH 60V 2.9A SOT223-4 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 60 V | 2.9A (Tj) | 120mOhm @ 2.9A, 10V | 4V @ 20µA | 12 nC @ 10 V | 340 pF @ 25 V | 10V | ±20V | — |
|
BSP320SH6433XTMA1
MOSFET N-CH 60V 2.9A SOT223 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | SOT-223 | 1.8W (Ta) | N-Channel | — | 60 V | 2.9A (Tj) | 120mOhm @ 2.9A, 10V | 4V @ 20µA | 9.3 nC @ 7 V | 340 pF @ 25 V | 10V | ±20V | — |
|
BSP320SL6327
SMALL-SIGNAL N-CHANNEL MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSP320SL6327HTSA1
MOSFET N-CH 60V 2.9A SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4-21 | 1.8W (Ta) | N-Channel | — | 60 V | 2.9A (Ta) | 120mOhm @ 2.9A, 10V | 4V @ 20µA | 12 nC @ 10 V | 340 pF @ 25 V | 10V | ±20V | — |
|
BSP320SL6433
SMALL-SIGNAL N-CHANNEL MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSP320SL6433HTMA1
MOSFET N-CH 60V 2.9A SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 60 V | 2.9A (Ta) | 120mOhm @ 2.9A, 10V | 4V @ 20µA | 12 nC @ 10 V | 340 pF @ 25 V | 10V | ±20V | — |
|
BSP321PH6327XTSA1
MOSFET P-CH 100V 980MA SOT223-4 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | P-Channel | — | 100 V | 980mA (Tc) | 900mOhm @ 980mA, 10V | 4V @ 380µA | 12 nC @ 10 V | 319 pF @ 25 V | 10V | ±20V | — |
|
BSP321PL6327
P-CHANNEL MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSP321PL6327HTSA1
MOSFET P-CH 100V 980MA SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4-21 | 1.8W (Ta) | P-Channel | — | 100 V | 980mA (Tc) | 900mOhm @ 980mA, 10V | 4V @ 380µA | 12 nC @ 10 V | 319 pF @ 25 V | 10V | ±20V | — |
|
BSP322PH6327XTSA1
MOSFET P-CH 100V 1A SOT223-4 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | P-Channel | — | 100 V | 1A (Tc) | 800mOhm @ 1A, 10V | 1V @ 380µA | 16.5 nC @ 10 V | 372 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP322PL6327
P-CHANNEL MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSP322PL6327HTSA1
MOSFET P-CH 100V 1A SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4-21 | 1.8W (Ta) | P-Channel | — | 100 V | 1A (Tc) | 800mOhm @ 1A, 10V | 1V @ 380µA | 16.5 nC @ 10 V | 372 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP324 E6327
MOSFET N-CH 400V 170MA SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 400 V | 170mA (Ta) | 25Ohm @ 170mA, 10V | 2.3V @ 94µA | 5.9 nC @ 10 V | 154 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP324H6327XTSA1
MOSFET N-CH 400V 170MA SOT223-4 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 400 V | 170mA (Ta) | 25Ohm @ 170mA, 10V | 2.3V @ 94µA | 5.9 nC @ 10 V | 154 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP324L6327
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSP324L6327HTSA1
MOSFET N-CH 400V 170MA SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4-21 | 1.8W (Ta) | N-Channel | — | 400 V | 170mA (Ta) | 25Ohm @ 170mA, 10V | 2.3V @ 94µA | 5.9 nC @ 10 V | 154 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP372 E6327
MOSFET N-CH 100V 1.7A SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 100 V | 1.7A (Ta) | 310mOhm @ 1.7A, 5V | 2V @ 1mA | — | 520 pF @ 25 V | 5V | ±14V | — |
|
BSP372L6327HTSA1
MOSFET N-CH 100V 1.7A SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 100 V | 1.7A (Ta) | 310mOhm @ 1.7A, 5V | 2V @ 1mA | — | 520 pF @ 25 V | 5V | ±14V | — |
|
BSP372NH6327XTSA1
MOSFET N-CH 100V 1.8A SOT223-4 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 100 V | 1.8A (Ta) | 230mOhm @ 1.8A, 10V | 1.8V @ 218µA | 14.3 nC @ 10 V | 329 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP373 E6327
MOSFET N-CH 100V 1.7A SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 100 V | 1.7A (Ta) | 300mOhm @ 1.7A, 10V | 4V @ 1mA | — | 550 pF @ 25 V | 10V | ±20V | — |
|
BSP373E6327
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 100 V | 1.7A (Ta) | 300mOhm @ 1.7A, 10V | 4V @ 1mA | — | 550 pF @ 25 V | 10V | ±20V | — |
|
BSP373L6327
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSP373L6327HTSA1
MOSFET N-CH 100V 1.7A SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 100 V | 1.7A (Ta) | 300mOhm @ 1.7A, 10V | 4V @ 1mA | — | 550 pF @ 25 V | 10V | ±20V | — |
|
BSP373NH6327XTSA1
MOSFET N-CH 100V 1.8A SOT223-4 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 100 V | 1.8A (Ta) | 240mOhm @ 1.8A, 10V | 4V @ 218µA | 9.3 nC @ 10 V | 265 pF @ 25 V | 10V | ±20V | — |
|
BSP603S2LHUMA1
MOSFET N-CH 55V 5.2A SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 55 V | 5.2A (Ta) | 33mOhm @ 2.6A, 10V | 2V @ 50µA | 42 nC @ 10 V | 1390 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP603S2LNT
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSP612PH6327XTSA1
SMALL SIGNAL+P-CH |
Infineon Technologies | Obsolete | — | — | — | — | — | — | — | — | — | 3A (Ta) | — | — | — | — | — | — | — |
|
BSP613P
MOSFET P-CH 60V 2.9A SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4-21 | 1.8W (Ta) | P-Channel | — | 60 V | 2.9A (Ta) | 130mOhm @ 2.9A, 10V | 4V @ 1mA | 33 nC @ 10 V | 875 pF @ 25 V | 10V | ±20V | — |
|
BSP613PH6327XTSA1
MOSFET P-CH 60V 2.9A SOT223-4 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | P-Channel | — | 60 V | 2.9A (Ta) | 130mOhm @ 2.9A, 10V | 4V @ 1mA | 33 nC @ 10 V | 875 pF @ 25 V | 10V | ±20V | — |
|
BSP613PL6327
P-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSP613PL6327HUSA1
MOSFET P-CH 60V 2.9A SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | P-Channel | — | 60 V | 2.9A (Ta) | 130mOhm @ 2.9A, 10V | 4V @ 1mA | 33 nC @ 10 V | 875 pF @ 25 V | 10V | ±20V | — |
|
BSP615S2L
MOSFET N-CH 55V 2.8A SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 55 V | 2.8A (Ta) | 90mOhm @ 1.4A, 10V | 2V @ 12µA | 10 nC @ 10 V | 330 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP615S2LHUMA1
MOSFET SOT223-4 |
Infineon Technologies | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSP716NH6327XTSA1
MOSFET N-CH 75V 2.3A SOT223-4 |
Infineon Technologies | Not For New Designs | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 75 V | 2.3A (Ta) | 160mOhm @ 2.3A, 10V | 1.8V @ 218µA | 13.1 nC @ 10 V | 315 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP88E6327
MOSFET N-CH 240V 350MA SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.7W (Ta) | N-Channel | — | 240 V | 350mA (Ta) | 6Ohm @ 350mA, 10V | 1.4V @ 108µA | 6.8 nC @ 10 V | 95 pF @ 25 V | 2.8V, 4.5V | ±20V | — |
|
BSP88H6327XTSA1
MOSFET N-CH 240V 350MA SOT223-4 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 240 V | 350mA (Ta) | 6Ohm @ 350mA, 10V | 1.4V @ 108µA | 6.8 nC @ 10 V | 95 pF @ 25 V | 2.8V, 10V | ±20V | — |
|
BSP88L6327
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSP88L6327HTSA1
MOSFET N-CH 240V 350MA SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4-21 | 1.7W (Ta) | N-Channel | — | 240 V | 350mA (Ta) | 6Ohm @ 350mA, 10V | 1.4V @ 108µA | 6.8 nC @ 10 V | 95 pF @ 25 V | 2.8V, 4.5V | ±20V | — |
|
BSP89 E6327
MOSFET N-CH 240V 350MA SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 240 V | 350mA (Ta) | 6Ohm @ 350mA, 10V | 1.8V @ 108µA | 6.4 nC @ 10 V | 140 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP89,115
MOSFET N-CH 240V 375MA SOT223 |
Nexperia | Active | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | SOT-223 | 1.5W (Ta) | N-Channel | — | 240 V | 375mA (Ta) | 5Ohm @ 340mA, 10V | 2V @ 1mA | — | 120 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP89H6327XTSA1
MOSFET N-CH 240V 350MA SOT223-4 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | N-Channel | — | 240 V | 350mA (Ta) | 6Ohm @ 350mA, 10V | 1.8V @ 108µA | 6.4 nC @ 10 V | 140 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP89L6327HTSA1
MOSFET N-CH 240V 350MA SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4-21 | 1.8W (Ta) | N-Channel | — | 240 V | 350mA (Ta) | 6Ohm @ 350mA, 10V | 1.8V @ 108µA | 6.4 nC @ 10 V | 140 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSP92P E6327
MOSFET P-CH 250V 260MA SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | P-Channel | — | 250 V | 260mA (Ta) | 12Ohm @ 260mA, 10V | 2V @ 130µA | 5.4 nC @ 10 V | 104 pF @ 25 V | 2.8V, 10V | ±20V | — |
|
BSP92PH6327XTSA1
MOSFET P-CH 250V 260MA SOT223-4 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | 1.8W (Ta) | P-Channel | — | 250 V | 260mA (Ta) | 12Ohm @ 260mA, 10V | 2V @ 130µA | 5.4 nC @ 10 V | 104 pF @ 25 V | 2.8V, 10V | ±20V | — |
|
BSP92PL6327
P-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSP92PL6327HTSA1
MOSFET P-CH 250V 260MA SOT223-4 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4-21 | 1.8W (Ta) | P-Channel | — | 250 V | 260mA (Ta) | 12Ohm @ 260mA, 10V | 2V @ 130µA | 5.4 nC @ 10 V | 104 pF @ 25 V | 4.5V, 10V | ±20V | — |
|
BSR202NL6327HTSA1
MOSFET N-CH 20V 3.8A SC59 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | PG-SC59-3 | 500mW (Ta) | N-Channel | — | 20 V | 3.8A (Ta) | 21mOhm @ 3.8A, 4.5V | 1.2V @ 30µA | 8.8 nC @ 4.5 V | 1147 pF @ 10 V | 2.5V, 4.5V | ±12V | — |
|
BSR302KL6327
SMALL SIGNAL MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |