Transistörler - FET, MOSFET - Diziler
- Komponent
- 5,229
- Marka
- 44
Komponentler
5,229 sonuç · Sayfa 62/105| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MP6K31TR
MOSFET 2N-CH 60V 2A MPT6 |
ROHM Semiconductor | Obsolete | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 2W | MPT6 | 2 N-Channel (Dual) | Logic Level Gate | 60V | 2A | 290mOhm @ 2A, 10V | 2.5V @ 1mA | 2nC @ 5V | 110pF @ 10V | — |
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MP6M11TCR
MOSFET N/P-CH 30V 3.5A MPT6 |
ROHM Semiconductor | Obsolete | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 2W | MPT6 | N and P-Channel | Logic Level Gate | 30V | 3.5A | 98mOhm @ 3.5A, 10V | 2.5V @ 1mA | 1.9nC @ 5V | 85pF @ 10V | — |
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MP6M12TCR
MOSFET N/P-CH 30V 5A MPT6 |
ROHM Semiconductor | Obsolete | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 2W | MPT6 | N and P-Channel | Logic Level Gate | 30V | 5A | 42mOhm @ 5A, 10V | 2.5V @ 1mA | 4nC @ 5V | 250pF @ 10V | — |
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MP6M14TCR
MOSFET N/P-CH 30V 8A/6A MPT6 |
ROHM Semiconductor | Obsolete | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 2W | MPT6 | N and P-Channel | Logic Level Gate, 4V Drive | 30V | 8A, 6A | 25mOhm @ 8A, 10V | 2.5V @ 1mA | 7.3nC @ 5V | 470pF @ 10V | — |
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MPIC2112P
HALF BRIDGE BASED MOSFET DRIVER, |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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MPIC2117P
BUFFER/INVERTER BASED MOSFET DRI |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
MRF6V2300NBR5,578
LATERAL N CHANNEL SINGLE-ENDED B |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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MRF6V2300NR5578
N CHANNEL ENHANCEMENT-MODE RF PO |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
MRF6VP11KHR5,178
LATERAL N-CHANNEL BROADBAND RF |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
MRF7S15100HSR3128
N CHANNEL ENHANCEMENT-MODE RF PO |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
MRF8S18120HSR3,128
RF L BAND, N-CHANNEL |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
MRF8S21100HSR3,128
RF S BAND, N-CHANNEL, MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
MRF8S9170NR3,528
RF ULTRA HIGH FREQUENCY BAND, N |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
MSC017SMA120B
MOSFET SIC 1200V 17 MOHM TO-247 |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
MSC017SMA120B4
MOSFET SIC 1200V 17 MOHM TO-247 |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
MSC017SMA120J
MOSFET SIC 1200V 17 MOHM SOT-227 |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
MSC017SMA120S
MOSFET SIC 1200V 17 MOHM TO-268 |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
MSCC60AM23C4AG
PM-MOSFET-COOLMOS-SBD-SP4 |
Microchip Technology | Active | — | Chassis Mount | Module | — | SP4 | 2 N-Channel | Standard | 600V | 81A (Tc) | — | — | — | — | — |
|
MSCC60VRM45TAPG
PM-MOSFET-COOLMOS-SP6P |
Microchip Technology | Active | — | Chassis Mount | Module | — | SP6-P | — | — | 600V | 40A (Tc) | — | — | — | — | — |
|
MSCC60VRM99CT3AG
PM-MOSFET-COOLMOS-SBD-SP3F |
Microchip Technology | Active | — | Chassis Mount | Module | — | SP3F | — | — | 600V | 19A (Tc) | — | — | — | — | — |
|
MSCM20AM058G
PM-MOSFET-FREDFET-5-LP8 |
Microchip Technology | Active | — | Chassis Mount | Module | — | LP8 | 2 N Channel (Phase Leg) | Standard | 200V | 280A (Tc) | — | — | — | — | — |
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MSCM20XM10T3XG
PM-MOSFET-OTHER-SP3X |
Microchip Technology | Active | -40°C ~ 125°C (TC) | Chassis Mount | Module | 341W (Tc) | SP3X | 6 N-Channel (3-Phase Bridge) | Standard | 200V | 108A (Tc) | 9.7mOhm @ 81A, 10V | 5V @ 250µA | 161nC @ 10V | 10.7nF @ 50V | — |
|
MSCM20XM16F4G
PM-MOSFET-FREDFET-7-SP4 |
Microchip Technology | Active | — | Chassis Mount | Module | — | SP4 | — | — | 200V | 77A (Tc) | — | — | — | — | — |
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MSCMC120AM02CT6LIAG
PM-MOSFET-SIC-SBD~-SP6C LI |
Microchip Technology | Active | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 3200W (Tc) | SP6C LI | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 742A (Tc) | 2.85mOhm @ 600A, 20V | 4V @ 180mA | 1932nC @ 20V | 33500pF @ 1000V | — |
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MSCMC120AM03CT6LIAG
PM-MOSFET-SIC-SBD~-SP6C LI |
Microchip Technology | Active | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 2778W (Tc) | SP6C LI | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 631A (Tc) | 3.4mOhm @ 500A, 20V | 4V @ 150mA | 1610nC @ 20V | 27900pF @ 1000V | — |
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MSCMC120AM04CT6LIAG
PM-MOSFET-SIC-SBD~-SP6C LI |
Microchip Technology | Active | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 1754W (Tc) | SP6C LI | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 388A (Tc) | 5.7mOhm @ 300A, 20V | 4V @ 90mA | 966nC @ 20V | 16700pF @ 1000V | — |
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MSCMC120AM07CT6LIAG
PM-MOSFET-SIC-SBD~-SP6C LI |
Microchip Technology | Active | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 1350W (Tc) | SP6C LI | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 264A (Tc) | 8.7mOhm @ 240A, 20V | 4V @ 60mA | 690nC @ 20V | 11400pF @ 1000V | — |
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MSCMC170AM08CT6LIAG
PM-MOSFET-SIC-SBD~-SP6C LI |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | 1780W (Tc) | SP6C LI | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1700V (1.7kV) | 280A (Tc) | 11.7mOhm @ 300A, 20V | 4V @ 108mA | 1128nC @ 20V | 22000pF @ 1000V | — |
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MSCMC90AM12C3AG
PM-MOSFET-SIC-SBD~-SP3F |
Microchip Technology | Active | — | Chassis Mount | Module | — | SP3F | — | — | 900V | 110A (Tc) | — | — | — | — | — |
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MSCSM120AM027CD3AG
PM-MOSFET-SIC-SBD~-D3 |
Microchip Technology | Active | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 2.97kW (Tc) | D3 | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 733A (Tc) | 3.5mOhm @ 360A, 20V | 2.8V @ 9mA | 2088nC @ 20V | 27000pF @1000V | — |
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MSCSM120AM027CT6AG
PM-MOSFET-SIC-SBD~-SP6C |
Microchip Technology | Active | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 2.97kW (Tc) | SP6C | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 733A (Tc) | 3.5mOhm @ 360A, 20V | 2.8V @ 9mA | 2088nC @ 20V | 27000pF @1000V | — |
|
MSCSM120AM02CT6LIAG
PM-MOSFET-SIC-SBD~-SP6C LI |
Microchip Technology | Active | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 3.75kW (Tc) | SP6C LI | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 947A (Tc) | 2.6mOhm @ 480A, 20V | 2.8V @ 12mA | 2784nC @ 20V | 36240pF @ 1000V | — |
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MSCSM120AM03CT6LIAG
PM-MOSFET-SIC-SBD~-SP6C LI |
Microchip Technology | Active | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 3.215kW (Tc) | SP6C LI | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 805A (Tc) | 3.1mOhm @ 400A, 20V | 2.8V @ 10mA | 2320nC @ 20V | 30200pF @ 1kV | — |
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MSCSM120AM042CD3AG
PM-MOSFET-SIC-SBD~-D3 |
Microchip Technology | Active | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 2.031kW (Tc) | D3 | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 495A (Tc) | 5.2mOhm @ 240A, 20V | 2.8V @ 6mA | 1392nC @ 20V | 18.1pF @ 1000V | — |
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MSCSM120AM042CT6AG
PM-MOSFET-SIC-SBD~-SP6C |
Microchip Technology | Active | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 2.031kW (Tc) | SP6C | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 495A (Tc) | 5.2mOhm @ 240A, 20V | 2.8V @ 6mA | 1392nC @ 20V | 18.1pF @ 1000V | — |
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MSCSM120AM042CT6LIAG
PM-MOSFET-SIC-SBD~-SP6C LI |
Microchip Technology | Active | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 2.031kW (Tc) | SP6C LI | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 495A (Tc) | 5.2mOhm @ 240A, 20V | 2.8V @ 6mA | 1392nC @ 20V | 18100pF @ 1kV | — |
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MSCSM120AM08CT3AG
PM-MOSFET-SIC-SBD~-SP3F |
Microchip Technology | Active | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 1.409kW (Tc) | SP3F | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 337A (Tc) | 7.8mOhm @ 160A, 20V | 2.8V @ 4mA | 928nC @ 20V | 12.08pF @ 1000V | — |
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MSCSM120AM11CT3AG
PM-MOSFET-SIC-SBD~-SP3F |
Microchip Technology | Active | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 1.067kW (Tc) | SP3F | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 254A (Tc) | 10.4mOhm @ 120A, 20V | 2.8V @ 3mA | 696nC @ 20V | 9060pF @ 1000V | — |
|
MSCSM120AM16CT1AG
PM-MOSFET-SIC-SBD~-SP1F |
Microchip Technology | Active | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 745W (Tc) | SP1F | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 173A (Tc) | 16mOhm @ 80A, 20V | 2.8V @ 2mA | 464nC @ 20V | 6040pF @ 1000V | — |
|
MSCSM120AM31CT1AG
PM-MOSFET-SIC-SBD~-SP1F |
Microchip Technology | Active | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 395W (Tc) | SP1F | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 89A (Tc) | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | — |
|
MSCSM120AM50CT1AG
PM-MOSFET-SIC-SBD~-SP1F |
Microchip Technology | Active | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 245W (Tc) | SP1F | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 55A (Tc) | 50mOhm @ 40A, 20V | 2.7V @ 1mA | 137nC @ 20V | 1990pF @ 1000V | — |
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MSCSM120DUM027AG
PM-MOSFET-SIC-SP6C |
Microchip Technology | Active | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 2968W (Tc) | — | 2 N-Channel (Dual) Common Source | Silicon Carbide (SiC) | 1200V (1.2kV) | 733A (Tc) | 3.5mOhm @ 360A, 20V | 2.8V @ 9mA | 2088nC @ 20V | 27000pF @ 1000V | — |
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MSCSM120DUM042AG
PM-MOSFET-SIC-SP6C |
Microchip Technology | Active | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 2031W (Tc) | — | 2 N-Channel (Dual) Common Source | Silicon Carbide (SiC) | 1200V (1.2kV) | 495A (Tc) | 5.2mOhm @ 240A, 20V | 2.8V @ 6mA | 1392nC @ 20V | 18100pF @ 1000V | — |
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MSCSM120DUM08T3AG
PM-MOSFET-SIC-SP3F |
Microchip Technology | Active | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 1409W (Tc) | SP3F | 2 N-Channel (Dual) Common Source | Silicon Carbide (SiC) | 1200V (1.2kV) | 337A (Tc) | 7.8mOhm @ 80A, 20V | 2.8V @ 4mA | 928nC @ 20V | 12100pF @ 1000V | — |
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MSCSM120DUM11T3AG
PM-MOSFET-SIC-SP3F |
Microchip Technology | Active | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 1067W (Tc) | SP3F | 2 N-Channel (Dual) Common Source | Silicon Carbide (SiC) | 1200V (1.2kV) | 254A (Tc) | 10.4mOhm @ 120A, 20V | 2.8V @ 3mA | 696nC @ 20V | 9060pF @ 1000V | — |
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MSCSM120DUM16T3AG
PM-MOSFET-SIC-SP3F |
Microchip Technology | Active | -55°C ~ 175°C (TJ) | Chassis Mount | Module | 745W (Tc) | SP3F | 2 N-Channel (Dual) Common Source | Silicon Carbide (SiC) | 1200V (1.2kV) | 173A (Tc) | 16mOhm @ 80A, 20V | 2.8V @ 2mA | 464nC @ 20V | 6040pF @ 1000V | — |
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MSCSM120HM063CAG
PM-MOSFET-SIC-SBD-SP6C |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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MSCSM120HM083CAG
PM-MOSFET-SIC-SBD-SP6C |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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MSCSM120HM16CT3AG
PM-MOSFET-SIC-SBD~-SP3F |
Microchip Technology | Active | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 745W (Tc) | SP3F | 4 N-Channel | Silicon Carbide (SiC) | 1200V (1.2kV) | 173A (Tc) | 16mOhm @ 80A, 20V | 2.8V @ 2mA | 464nC @ 20V | 6040pF @ 1000V | — |
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MSCSM120HM31CT3AG
PM-MOSFET-SIC-SBD~-SP3F |
Microchip Technology | Active | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 395W (Tc) | SP3F | 4 N-Channel | Silicon Carbide (SiC) | 1200V (1.2kV) | 89A (Tc) | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | — |