Transistörler - FET, MOSFET - Tekil
- Komponent
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Komponentler
10,000 sonuç · Sayfa 88/200| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSB053N03LP G
MOSFET N-CH 30V 17A/71A 2WDSON |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | 3-WDSON | MOSFET (Metal Oxide) | MG-WDSON-2, CanPAK M™ | 2.3W (Ta), 42W (Tc) | N-Channel | — | 30 V | 17A (Ta), 71A (Tc) | 5.3mOhm @ 30A, 10V | 2.2V @ 250µA | 29 nC @ 10 V | 2700 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSB053N03LPG
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | 3-WDSON | MOSFET (Metal Oxide) | MG-WDSON-2, CanPAK M™ | 2.3W (Ta), 42W (Tc) | N-Channel | — | 30 V | 17A (Ta), 71A (Tc) | 5.3mOhm @ 30A, 10V | 2.2V @ 250µA | 29 nC @ 10 V | 2700 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSB056N10NN3G
BSB056N10 - 12V-300V N-CHANNEL P |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSB056N10NN3GXUMA1
MOSFET N-CH 100V 9A/83A 2WDSON |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | 3-WDSON | MOSFET (Metal Oxide) | MG-WDSON-2, CanPAK M™ | 2.8W (Ta), 78W (Tc) | N-Channel | — | 100 V | 9A (Ta), 83A (Tc) | 5.6mOhm @ 30A, 10V | 3.5V @ 100µA | 74 nC @ 10 V | 5500 pF @ 50 V | 6V, 10V | ±20V | — |
|
BSB104N08NP3GXUSA1
MOSFET N-CH 80V 13A/50A 2WDSON |
Infineon Technologies | Not For New Designs | -40°C ~ 150°C (TJ) | Surface Mount | 3-WDSON | MOSFET (Metal Oxide) | MG-WDSON-2, CanPAK M™ | 2.8W (Ta), 42W (Tc) | N-Channel | — | 80 V | 13A (Ta), 50A (Tc) | 10.4mOhm @ 10A, 10V | 3.5V @ 40µA | 31 nC @ 10 V | 2100 pF @ 40 V | 10V | ±20V | — |
|
BSB165N15NZ3G
BSB165N15 - 12V-300V N-CHANNEL P |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSB165N15NZ3GXUMA1
MOSFET N-CH 150V 9A/45A 2WDSON |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | 3-WDSON | MOSFET (Metal Oxide) | MG-WDSON-2, CanPAK M™ | 2.8W (Ta), 78W (Tc) | N-Channel | — | 150 V | 9A (Ta), 45A (Tc) | 16.5mOhm @ 30A, 10V | 4V @ 110µA | 35 nC @ 10 V | 2800 pF @ 75 V | 8V, 10V | ±20V | — |
|
BSB280N15NZ3G
BSB280N15 - 12V-300V N-CHANNEL P |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSB280N15NZ3GXUMA1
MOSFET N-CH 150V 9A/30A 2WDSON |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | 3-WDSON | MOSFET (Metal Oxide) | MG-WDSON-2, CanPAK M™ | 2.8W (Ta), 57W (Tc) | N-Channel | — | 150 V | 9A (Ta), 30A (Tc) | 28mOhm @ 30A, 10V | 4V @ 60µA | 21 nC @ 10 V | 1600 pF @ 75 V | 10V | ±20V | — |
|
BSB881N03LX3GXUMA1
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSC004NE2LS5ATMA1
TRENCH <= 40V |
Infineon Technologies | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8 | 2.5W (Ta), 188W (Tc) | N-Channel | — | 25 V | 40A (Ta), 479A (Tc) | 0.45mOhm @ 30A, 10V | 2V @ 10mA | 238 nC @ 10 V | 11000 pF @ 12.5 V | 4.5V, 10V | ±20V | — |
|
BSC005N03LS5ATMA1
TRENCH <= 40V |
Infineon Technologies | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8 FL | 3W (Ta), 188W (Tc) | N-Channel | — | 30 V | 42A (Ta), 433A (Tc) | 0.55mOhm @ 50A, 10V | 2V @ 250µA | 122 nC @ 10 V | 8900 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSC005N03LS5IATMA1
TRENCH <= 40V |
Infineon Technologies | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8 FL | 3W (Ta), 188W (Tc) | N-Channel | — | 30 V | 42A (Ta), 433A (Tc) | 0.55mOhm @ 50A, 10V | 2V @ 10mA | 128 nC @ 10 V | 8000 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSC007N04LS6ATMA1
MOSFET N-CH 40V 100A TDSON-8-6 |
Infineon Technologies | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-6 | 188W | N-Channel | — | 40 V | 381A (Tc) | 0.7mOhm @ 50A, 10V | 2.3V @ 250µA | 94 nC @ 4.5 V | 8400 pF @ 20 V | 4.5V, 10V | ±20V | — |
|
BSC009NE2LS5ATMA1
MOSFET N-CH 25V 41A/100A TDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-7 | 2.5W (Ta), 74W (Tc) | N-Channel | — | 25 V | 41A (Ta), 100A (Tc) | 0.9mOhm @ 30A, 10V | 2V @ 250µA | 57 nC @ 10 V | 3900 pF @ 12 V | 4.5V, 10V | ±16V | — |
|
BSC009NE2LS5IATMA1
MOSFET N-CH 25V 40A/100A TDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-7 | 2.5W (Ta), 74W (Tc) | N-Channel | — | 25 V | 40A (Ta), 100A (Tc) | 0.95mOhm @ 30A, 10V | 2V @ 250µA | 49 nC @ 10 V | 3200 pF @ 12 V | 4.5V, 10V | ±16V | — |
|
BSC009NE2LSATMA1
MOSFET N-CH 25V 41A/100A TDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-7 | 2.5W (Ta), 96W (Tc) | N-Channel | — | 25 V | 41A (Ta), 100A (Tc) | 0.9mOhm @ 30A, 10V | 2.2V @ 250µA | 126 nC @ 10 V | 5800 pF @ 12 V | 4.5V, 10V | ±20V | — |
|
BSC010N04LS6ATMA1
MOSFET N-CH 40V 40A/100A TDSON |
Infineon Technologies | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-6 | 3W (Ta), 150W (Tc) | N-Channel | — | 40 V | 40A (Ta), 100A (Tc) | 1mOhm @ 50A, 10V | 2.3V @ 250µA | 67 nC @ 4.5 V | 4600 pF @ 20 V | 4.5V, 10V | ±20V | — |
|
BSC010N04LSATMA1
MOSFET N-CH 40V 38A/100A TDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8 FL | 2.5W (Ta), 139W (Tc) | N-Channel | — | 40 V | 38A (Ta), 100A (Tc) | 1mOhm @ 50A, 10V | 2V @ 250µA | 95 nC @ 10 V | 6800 pF @ 20 V | 4.5V, 10V | ±20V | — |
|
BSC010N04LSCATMA1
DIFFERENTIATED MOSFETS |
Infineon Technologies | Active | — | — | — | — | — | — | — | — | — | 282A (Tc) | — | — | — | — | — | — | — |
|
BSC010N04LSIATMA1
MOSFET N-CH 40V 37A/100A TDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8 FL | 2.5W (Ta), 139W (Tc) | N-Channel | Schottky Diode (Body) | 40 V | 37A (Ta), 100A (Tc) | 1.05mOhm @ 50A, 10V | 2V @ 250µA | 87 nC @ 10 V | 6200 pF @ 20 V | 4.5V, 10V | ±20V | — |
|
BSC010N04LSTATMA1
MOSFET N-CH 40V 39A/100A TDSON |
Infineon Technologies | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8 FL | 3W (Ta), 167W (Tc) | N-Channel | — | 40 V | 39A (Ta), 100A (Tc) | 1mOhm @ 50A, 10V | 2V @ 250µA | 133 nC @ 10 V | 9520 pF @ 20 V | 4.5V, 10V | ±20V | — |
|
BSC010NE2LSATMA1
MOSFET N-CH 25V 39A/100A TDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-7 | 2.5W (Ta), 96W (Tc) | N-Channel | — | 25 V | 39A (Ta), 100A (Tc) | 1mOhm @ 30A, 10V | 2V @ 250µA | 64 nC @ 10 V | 4700 pF @ 12 V | 4.5V, 10V | ±20V | — |
|
BSC010NE2LSIATMA1
MOSFET N-CH 25V 38A/100A TDSON |
Infineon Technologies | Active | — | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-7 | 2.5W (Ta), 96W (Tc) | N-Channel | — | 25 V | 38A (Ta), 100A (Tc) | 1.05mOhm @ 30A, 10V | 2V @ 250µA | 59 nC @ 10 V | 4200 pF @ 12 V | 4.5V, 10V | ±20V | — |
|
BSC011N03LSATMA1
MOSFET N-CH 30V 37A/100A TDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 2.5W (Ta), 96W (Tc) | N-Channel | — | 30 V | 37A (Ta), 100A (Tc) | 1.1mOhm @ 30A, 10V | 2.2V @ 250µA | 72 nC @ 10 V | 4700 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSC011N03LSIATMA1
MOSFET N-CH 30V 37A/100A TDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-7 | 2.5W (Ta), 96W (Tc) | N-Channel | — | 30 V | 37A (Ta), 100A (Tc) | 1.1mOhm @ 30A, 10V | 2V @ 250µA | 68 nC @ 10 V | 4300 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSC011N03LSTATMA1
MOSFET N-CH 30V 39A/100A TDSON |
Infineon Technologies | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8 FL | 3W (Ta), 115W (Tc) | N-Channel | — | 30 V | 39A (Ta), 100A (Tc) | 1.1mOhm @ 30A, 10V | 2V @ 250µA | 48 nC @ 4.5 V | 6300 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSC012N06NSATMA1
MOSFET N-CH 60V 100A TSON-8 |
Infineon Technologies | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSON-8-3 | 214W (Tc) | N-Channel | — | 60 V | 36A (Ta), 306A (Tc) | 1.2mOhm @ 50A, 10V | 3.3V @ 147µA | 143 nC @ 10 V | 11000 pF @ 30 V | 6V, 10V | ±20V | — |
|
BSC014N03LSGATMA1
BSC014N03 - 12V-300V N-CHANNEL P |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 2.5W (Ta), 139W (Tc) | N-Channel | — | 30 V | 34A (Ta), 100A (Tc) | 1.4mOhm @ 30A, 10V | 2.2V @ 250µA | 131 nC @ 10 V | 10000 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSC014N03LSGATMA1
MOSFET N-CH 30V 34A/100A TDSON |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 2.5W (Ta), 139W (Tc) | N-Channel | — | 30 V | 34A (Ta), 100A (Tc) | 1.4mOhm @ 30A, 10V | 2.2V @ 250µA | 131 nC @ 10 V | 10000 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSC014N03MSGATMA1
MOSFET N-CH 30V 30A/100A TDSON |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 2.5W (Ta), 139W (Tc) | N-Channel | — | 30 V | 30A (Ta), 100A (Tc) | 1.4mOhm @ 30A, 10V | 2V @ 250µA | 173 nC @ 10 V | 13000 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSC014N04LSATMA1
MOSFET N-CH 40V 32/100A SUPERSO8 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | SuperSO8 | 2.5W (Ta), 96W (Tc) | N-Channel | — | 40 V | 32A (Ta), 100A (Tc) | 1.4mOhm @ 50A, 10V | 2V @ 250µA | 61 nC @ 10 V | 4300 pF @ 20 V | 4.5V, 10V | ±20V | — |
|
BSC014N04LSIATMA1
MOSFET N-CH 40V 31A/100A TDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8 FL | 2.5W (Ta), 96W (Tc) | N-Channel | — | 40 V | 31A (Ta), 100A (Tc) | 1.45mOhm @ 50A, 10V | 2V @ 250µA | 55 nC @ 10 V | 4000 pF @ 20 V | 4.5V, 10V | ±20V | — |
|
BSC014N04LSTATMA1
MOSFET N-CH 40V 33A/100A TDSON |
Infineon Technologies | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8 FL | 3W (Ta), 115W (Tc) | N-Channel | — | 40 V | 33A (Ta), 100A (Tc) | 1.4mOhm @ 50A, 10V | 2V @ 250µA | 85 nC @ 10 V | 6020 pF @ 20 V | 4.5V, 10V | ±20V | — |
|
BSC014N06LS5ATMA1
MOSFET 60V TDSON-8-7 |
Infineon Technologies | Active | — | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-7 | — | — | — | 60 V | — | — | — | — | — | — | — | — |
|
BSC014N06NSATMA1
MOSFET N-CH 60V 30A/100A TDSON7 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-17 | 2.5W (Ta), 156W (Tc) | N-Channel | — | 60 V | 30A (Ta), 100A (Tc) | 1.45mOhm @ 50A, 10V | 2.8V @ 120µA | 89 nC @ 10 V | 6500 pF @ 30 V | 6V, 10V | ±20V | — |
|
BSC014N06NSSCATMA1
MOSFET N-CH 60V 261A WSON-8 |
Infineon Technologies | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | MOSFET (Metal Oxide) | PG-WSON-8-2 | 3W (Ta), 188W (Tc) | N-Channel | — | 60 V | 261A (Tc) | 1.4mOhm @ 50A, 10V | 3.3V @ 120µA | 104 nC @ 10 V | 8125 pF @ 30 V | 6V, 10V | ±20V | — |
|
BSC014N06NSTATMA1
MOSFET N-CH 60V 100A TDSON-8 FL |
Infineon Technologies | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8 FL | 3W (Ta), 188W (Tc) | N-Channel | — | 60 V | 100A (Tc) | 1.45mOhm @ 50A, 10V | 3.3V @ 120µA | 104 nC @ 10 V | 8125 pF @ 30 V | 6V, 10V | ±20V | — |
|
BSC014NE2LSIATMA1
MOSFET N-CH 25V 33A/100A TDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-7 | 2.5W (Ta), 74W (Tc) | N-Channel | — | 25 V | 33A (Ta), 100A (Tc) | 1.4mOhm @ 30A, 10V | 2V @ 250µA | 39 nC @ 10 V | 2700 pF @ 12 V | 4.5V, 10V | ±20V | — |
|
BSC015NE2LS5IATMA1
MOSFET N-CH 25V 33A/100A TDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-6 | 2.5W (Ta), 50W (Tc) | N-Channel | — | 25 V | 33A (Ta), 100A (Tc) | 1.5mOhm @ 30A, 10V | 2V @ 250µA | 30 nC @ 10 V | 2000 pF @ 12 V | 4.5V, 10V | ±16V | — |
|
BSC016N03LSG
BSC016N03 - 12V-300V N-CHANNEL P |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSC016N03LSGATMA1
MOSFET N-CH 30V 32A/100A TDSON |
Infineon Technologies | Not For New Designs | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 2.5W (Ta), 125W (Tc) | N-Channel | — | 30 V | 32A (Ta), 100A (Tc) | 1.6mOhm @ 30A, 10V | 2.2V @ 250µA | 131 nC @ 10 V | 10000 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSC016N03LSGATMA1/BK
BSC016N03LSGATMA1/BK |
WEC | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 2.5W (Ta), 125W (Tc) | N-Channel | — | 30 V | 32A (Ta), 100A (Tc) | 1.6mOhm @ 30A, 10V | 2.2V @ 250µA | 131 nC @ 10 V | 10000 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSC016N03MSG
BSC016N03 - 12V-300V N-CHANNEL P |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BSC016N03MSGATMA1
MOSFET N-CH 30V 28A/100A TDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 2.5W (Ta), 125W (Tc) | N-Channel | — | 30 V | 28A (Ta), 100A (Tc) | 1.6mOhm @ 30A, 10V | 2V @ 250µA | 173 nC @ 10 V | 13000 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
BSC016N04LSGATMA1
MOSFET N-CH 40V 31A/100A TDSON |
Infineon Technologies | Not For New Designs | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 2.5W (Ta), 139W (Tc) | N-Channel | — | 40 V | 31A (Ta), 100A (Tc) | 1.6mOhm @ 50A, 10V | 2V @ 85µA | 150 nC @ 10 V | 12000 pF @ 20 V | 4.5V, 10V | ±20V | — |
|
BSC016N06NSATMA1
MOSFET N-CH 60V 30A/100A TDSON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8 FL | 2.5W (Ta), 139W (Tc) | N-Channel | — | 60 V | 30A (Ta), 100A (Tc) | 1.6mOhm @ 50A, 10V | 2.8V @ 95µA | 71 nC @ 10 V | 5200 pF @ 30 V | 6V, 10V | ±20V | — |
|
BSC016N06NSSCATMA1
TRENCH 40<-<100V PG-WSON-8 |
Infineon Technologies | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8 | 167W (Tc) | N-Channel | — | 60 V | 234A (Tc) | 1.6mOhm @ 50A, 10V | 3.3V @ 95µA | 95 nC @ 10 V | 6500 pF @ 30 V | 6V, 10V | ±20V | — |
|
BSC016N06NSTATMA1
MOSFET N-CH 60V 31A/100A TDSON |
Infineon Technologies | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8 FL | 3W (Ta), 167W (Tc) | N-Channel | — | 60 V | 31A (Ta), 100A (Tc) | 1.6mOhm @ 50A, 10V | 3.3V @ 95µA | 95 nC @ 10 V | 6500 pF @ 30 V | 6V, 10V | ±20V | — |
|
BSC017N04NSGATMA1
MOSFET N-CH 40V 30A/100A TDSON |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | 2.5W (Ta), 139W (Tc) | N-Channel | — | 40 V | 30A (Ta), 100A (Tc) | 1.7mOhm @ 50A, 10V | 4V @ 85µA | 108 nC @ 10 V | 8800 pF @ 20 V | 10V | ±20V | — |