Transistörler - IGBT - Tekil
- Komponent
- 4,505
- Marka
- 19
Komponentler
4,505 sonuç · Sayfa 15/91| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Input Type | Power - Max | Supplier Device Package | Reverse Recovery Time (trr) | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Test Condition | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FS100R07N2E4_B11
FS100R07 - IGBT MODULE |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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FS100R12PT4
INSULATED GATE BIPOLAR TRANSISTO |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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FS150R07N3E4
FS150R07 - IGBT MODULE |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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FS200R07N3E4R_B11
FS200R07 - IGBT MODULE |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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FS200R12PT4
INSULATED GATE BIPOLAR TRANSISTO |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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FS50R06KE3
FS50R06 - IGBT MODULE |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
FS75R07N2E4_B11
FS75R07 - IGBT MODULE |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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FZ1600R12HP4
FZ1600R12 - IGBT MODULE |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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FZ1600R12HP4NPSA1
INSULATED GATE BIPOLAR TRANSISTO |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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FZ1600R17HP4_B21
FZ1600R17 - IGBT MODULE |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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FZ1800R12HP4B9NPSA1
INSULATED GATE BIPOLAR TRANSISTO |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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FZ1800R17HE4B9NPSA1
INSULATED GATE BIPOLAR TRANSISTO |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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FZ1800R17HP4_B29
FZ1800R17 - IGBT MODULE |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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FZ2400R12HE4B9NPSA1
INSULATED GATE BIPOLAR TRANSISTO |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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FZ2400R12HP4B9NPSA1
INSULATED GATE BIPOLAR TRANSISTO |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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FZ2400R12HP4NPSA1
INSULATED GATE BIPOLAR TRANSISTO |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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FZ2400R17HE4B9NPSA1
INSULATED GATE BIPOLAR TRANSISTO |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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FZ3600R17HE4NPSA1
INSULATED GATE BIPOLAR TRANSISTO |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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GA35XCP12-247
IGBT 1200V SOT247 |
GeneSiC Semiconductor | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | TO-247-3 | Standard | — | TO-247AB | 36 ns | — | 1200 V | PT | 3V @ 15V, 35A | 35 A | 2.66mJ (on), 4.35mJ (off) | 50 nC | — | 800V, 35A, 22Ohm, 15V | — |
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GN2470K4-G
IC IGBT 700V 3.5A 3DPAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | Standard | 2.5 W | TO-252 | — | 1 A | 700 V | — | 5V @ 13V, 3A | 3.5 A | — | — | 8ns/20ns | — | — |
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GPA015A120MN-ND
IGBT 1200V 30A 212W TO3PN |
SemiQ | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | Standard | 212 W | TO-3PN | 320 ns | 30 A | 1200 V | NPT and Trench | 2.5V @ 15V, 15A | 45 A | 1.61mJ (on), 530µJ (off) | 210 nC | 25ns/166ns | 600V, 15A, 10Ohm, 15V | — |
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GPA020A120MN-FD
IGBT 1200V 40A 223W TO3PN |
SemiQ | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | Standard | 223 W | TO-3PN | 425 ns | 40 A | 1200 V | Trench Field Stop | 2.5V @ 15V, 20A | 60 A | 2.8mJ (on), 480µJ (off) | 210 nC | 30ns/150ns | 600V, 20A, 10Ohm, 15V | — |
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GPA020A135MN-FD
IGBT 1350V 40A 223W TO3PN |
SemiQ | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | Standard | 223 W | TO-3PN | 425 ns | 40 A | 1350 V | Trench Field Stop | 2.3V @ 15V, 20A | 60 A | 2.5mJ (on), 760µJ (off) | 180 nC | 25ns/175ns | 600V, 20A, 10Ohm, 15V | — |
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GPA025A120MN-ND
IGBT 1200V 50A 312W TO3PN |
SemiQ | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | Standard | 312 W | TO-3PN | 480 ns | 50 A | 1200 V | NPT and Trench | 2.5V @ 15V, 25A | 75 A | 4.15mJ (on), 870µJ (off) | 350 nC | 57ns/240ns | 600V, 25A, 10Ohm, 15V | — |
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GPA030A120I-FD
IGBT 1200V 60A 329W TO247 |
SemiQ | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | Standard | 329 W | TO-247 | 450 ns | 60 A | 1200 V | Trench Field Stop | 2.5V @ 15V, 30A | 90 A | 4.5mJ (on), 850µJ (off) | 330 nC | 40ns/245ns | 600V, 30A, 10Ohm, 15V | — |
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GPA030A120MN-FD
IGBT 1200V 60A 329W TO3PN |
SemiQ | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | Standard | 329 W | TO-3PN | 450 ns | 60 A | 1200 V | Trench Field Stop | 2.5V @ 15V, 30A | 90 A | 4.5mJ (on), 850µJ (off) | 330 nC | 40ns/245ns | 600V, 30A, 10Ohm, 15V | — |
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GPA030A135MN-FDR
IGBT 1350V 60A 329W TO3PN |
SemiQ | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | Standard | 329 W | TO-3PN | 450 ns | 60 A | 1350 V | Trench Field Stop | 2.4V @ 15V, 30A | 90 A | 4.4mJ (on), 1.18mJ (off) | 300 nC | 30ns/145ns | 600V, 30A, 5Ohm, 15V | — |
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GPA040A120L-FD
IGBT 1200V 80A 480W TO264 |
SemiQ | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | Standard | 480 W | TO-264 | 200 ns | 80 A | 1200 V | Trench Field Stop | 2.6V @ 15V, 40A | 120 A | 5.3mJ (on), 1.1mJ (off) | 480 nC | 55ns/200ns | 600V, 40A, 5Ohm, 15V | — |
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GPA040A120L-ND
IGBT 1200V 80A 455W TO264 |
SemiQ | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | Standard | 455 W | TO-264 | 220 ns | 80 A | 1200 V | NPT and Trench | 2.8V @ 15V, 40A | 120 A | 5.8mJ (on), 1.5mJ (off) | 510 nC | 41ns/200ns | 600V, 40A, 5Ohm, 15V | — |
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GPA040A120MN-FD
IGBT 1200V 80A 480W TO3PN |
SemiQ | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | Standard | 480 W | TO-3PN | 200 ns | 80 A | 1200 V | Trench Field Stop | 2.6V @ 15V, 40A | 120 A | 5.3mJ (on), 1.1mJ (off) | 480 nC | 55ns/200ns | 600V, 40A, 5Ohm, 15V | — |
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GPA042A100L-ND
IGBT 1000V 60A 463W TO264 |
SemiQ | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | Standard | 463 W | TO-264 | 465 ns | 60 A | 1000 V | NPT and Trench | 2.9V @ 15V, 60A | 120 A | 13.1mJ (on), 6.3mJ (off) | 405 nC | 230ns/1480ns | 600V, 60A, 50Ohm, 15V | — |
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GPA060A060MN-FD
IGBT 600V 120A 347W TO3PN |
SemiQ | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | Standard | 347 W | TO-3PN | 140 ns | 120 A | 600 V | Trench Field Stop | 2.3V @ 15V, 60A | 180 A | 2.66mJ (on), 1.53mJ (off) | 225 nC | 45ns/150ns | 400V, 60A, 10Ohm, 15V | — |
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GPI040A060MN-FD
IGBT 600V 80A 231W TO3PN |
SemiQ | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | Standard | 231 W | TO-3PN | 60 ns | 80 A | 600 V | Trench Field Stop | 2.3V @ 15V, 40A | 120 A | 1.46mJ (on), 540µJ (off) | 173 nC | 35ns/85ns | 400V, 40A, 5Ohm, 15V | — |
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GT10G131(TE12L,Q)
IGBT 400V 1W 8-SOIC |
Toshiba Electronic Devices and Storage Corporation | Obsolete | 150°C (TJ) | Surface Mount | — | Standard | 1 W | 8-SOP (5.5x6.0) | — | — | 400 V | — | 2.3V @ 4V, 200A | 200 A | — | — | 3.1µs/2µs | — | — |
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GT10J312(Q)
IGBT 600V 10A 60W TO220SM |
Toshiba Electronic Devices and Storage Corporation | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | Standard | 60 W | TO-220SM | 200 ns | 10 A | 600 V | — | 2.7V @ 15V, 10A | 20 A | — | — | 400ns/400ns | 300V, 10A, 100Ohm, 15V | — |
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GT20N135SRA,S1E
D-IGBT TO-247 VCES=1350V IC=40A |
Toshiba Electronic Devices and Storage Corporation | Active | 175°C (TJ) | Through Hole | TO-247-3 | Standard | 312 W | TO-247 | — | 40 A | 1350 V | — | 2.4V @ 15V, 40A | 80 A | -, 700µJ (off) | 185 nC | — | 300V, 40A, 39Ohm, 15V | — |
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GT30J121(Q)
IGBT 600V 30A 170W TO3PN |
Toshiba Electronic Devices and Storage Corporation | Active | — | Through Hole | TO-3P-3, SC-65-3 | Standard | 170 W | TO-3P(N) | — | 30 A | 600 V | — | 2.45V @ 15V, 30A | 60 A | 1mJ (on), 800µJ (off) | — | 90ns/300ns | 300V, 30A, 24Ohm, 15V | — |
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GT30J341,Q
IGBT TRANS 600V 30A TO3PN |
Toshiba Electronic Devices and Storage Corporation | Active | 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | Standard | 230 W | TO-3P(N) | 50 ns | 59 A | 600 V | — | 2V @ 15V, 30A | 120 A | 800µJ (on), 600µJ (off) | — | 80ns/280ns | 300V, 30A, 24Ohm, 15V | — |
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GT30N135SRA,S1E
D-IGBT TO-247 VCES=1350V IC=30A |
Toshiba Electronic Devices and Storage Corporation | Active | 175°C (TJ) | Through Hole | TO-247-3 | Standard | 348 W | TO-247 | — | 60 A | 1350 V | — | 2.6V @ 15V, 60A | 120 A | -, 1.3mJ (off) | 270 nC | — | 300V, 60A, 39Ohm, 15V | — |
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GT50J121(Q)
IGBT 600V 50A 240W TO3P LH |
Toshiba Electronic Devices and Storage Corporation | Obsolete | 150°C (TJ) | Through Hole | TO-3PL | Standard | 240 W | TO-3P(LH) | — | 50 A | 600 V | — | 2.45V @ 15V, 50A | 100 A | 1.3mJ (on), 1.34mJ (off) | — | 90ns/300ns | 300V, 50A, 13Ohm, 15V | — |
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GT60N321(Q)
IGBT 1000V 60A 170W TO3P LH |
Toshiba Electronic Devices and Storage Corporation | Obsolete | 150°C (TJ) | Through Hole | TO-3PL | Standard | 170 W | TO-3P(LH) | 2.5 µs | 60 A | 1000 V | — | 2.8V @ 15V, 60A | 120 A | — | — | 330ns/700ns | — | — |
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GT8G133(TE12L,Q)
IGBT 400V 600MW 8TSSOP |
Toshiba Electronic Devices and Storage Corporation | Obsolete | 150°C (TJ) | Surface Mount | — | Standard | 600 mW | 8-TSSOP | — | — | 400 V | — | 2.9V @ 4V, 150A | 150 A | — | — | 1.7µs/2µs | — | — |
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HG24N60D1D
HG24N60D1D |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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HGT1S10N120BNS
IGBT, 35A, 1200V, N-CHANNEL, TO- |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Standard | 298 W | TO-263AB | — | 35 A | 1200 V | NPT | 2.7V @ 15V, 10A | 80 A | 320µJ (on), 800µJ (off) | 100 nC | 23ns/165ns | 960V, 10A, 10Ohm, 15V | — |
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HGT1S10N120BNS
IGBT 1200V 35A 298W TO263AB |
onsemi | Not For New Designs | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Standard | 298 W | D²PAK (TO-263) | — | 35 A | 1200 V | NPT | 2.7V @ 15V, 10A | 80 A | 320µJ (on), 800µJ (off) | 100 nC | 23ns/165ns | 960V, 10A, 10Ohm, 15V | — |
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HGT1S10N120BNST
IGBT 1200V 35A 298W TO263AB |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Standard | 298 W | D²PAK (TO-263) | — | 35 A | 1200 V | NPT | 2.7V @ 15V, 10A | 80 A | 320µJ (on), 800µJ (off) | 100 nC | 23ns/165ns | 960V, 10A, 10Ohm, 15V | — |
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HGT1S12N60A4DS
IGBT, 54A, 600V, N-CHANNEL, TO-2 |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Standard | 167 W | TO-263AB | 30 ns | 54 A | 600 V | — | 2.7V @ 15V, 12A | 96 A | 55µJ (on), 50µJ (off) | 120 nC | 17ns/96ns | 390V, 12A, 10Ohm, 15V | — |
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HGT1S12N60A4DS
IGBT 600V 54A 167W D2PAK |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Standard | 167 W | D²PAK (TO-263) | 30 ns | 54 A | 600 V | — | 2.7V @ 15V, 12A | 96 A | 55µJ (on), 50µJ (off) | 78 nC | 17ns/96ns | 390V, 12A, 10Ohm, 15V | — |
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HGT1S12N60A4S9A
IGBT 600V 54A 167W TO263AB |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Standard | 167 W | D²PAK (TO-263) | — | 54 A | 600 V | — | 2.7V @ 15V, 12A | 96 A | 55µJ (on), 50µJ (off) | 78 nC | 17ns/96ns | 390V, 12A, 10Ohm, 15V | — |
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HGT1S12N60B3
27A, 600V, N-CHANNEL IGBT |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | Standard | 104 W | I2PAK (TO-262) | — | 27 A | 600 V | — | 2.1V @ 15V, 12A | 110 A | 304µJ (on), 250µJ (off) | 68 nC | 26ns/150ns | 480V, 12A, 25Ohm, 15V | — |