Transistörler - FET, MOSFET - Tekil
- Komponent
- 40,166
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Komponentler
40,166 sonuç · Sayfa 1/804| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1HN04CH-TL-W
MOSFET N-CH 100V 270MA 3CPH |
onsemi | Obsolete | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | 3-CPH | — | N-Channel | — | 100 V | 270mA (Ta) | 8Ohm @ 140mA, 10V | 2.6V @ 100µA | 0.9 nC @ 10 V | 15 pF @ 20 V | 4V, 10V | ±20V | — |
|
1HP04CH-TL-W
MOSFET P-CH 100V 170MA 3CPH |
onsemi | Obsolete | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | 3-CPH | — | P-Channel | — | 100 V | 170mA (Ta) | 18Ohm @ 80mA, 10V | 2.6V @ 100µA | 0.9 nC @ 10 V | 14 pF @ 20 V | 4V, 10V | ±20V | — |
|
1IRF3710PBF
IRF3710 - 100V HEXFET N-CHANNEL |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
2301
P20V,RD(MAX)<56M@-4.5V,RD(MAX)<8 |
Goford Semiconductor | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | SOT-23 | 1W (Ta) | P-Channel | — | 20 V | 3A (Ta) | 56mOhm @ 1.7A, 4.5V | 900mV @ 250µA | 12 nC @ 2.5 V | 405 pF @ 10 V | 2.5V, 4.5V | ±10V | — |
|
2301H
P30V,RD(MAX)<130M@-4.5V,RD(MAX)< |
Goford Semiconductor | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | SOT-23-3 | 1W (Ta) | P-Channel | — | 30 V | 2A (Ta) | 125mOhm @ 3A, 10V | 2V @ 250µA | 12 nC @ 2.5 V | 405 pF @ 10 V | 4.5V, 10V | ±12V | — |
|
2302
MOSFET N-CH 20V 4.3A SOT-23 |
Goford Semiconductor | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | SOT-23-3 | 1W (Ta) | N-Channel | Standard | 20 V | 4.3A (Ta) | 27mOhm @ 2.2A, 4.5V | 1.1V @ 250µA | 10 nC @ 4.5 V | 300 pF @ 10 V | 2.5V, 4.5V | ±10V | — |
|
25P06
P60V,RD(MAX)<45M@-10V,VTH2V~3V T |
Goford Semiconductor | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252 | 100W (Tc) | P-Channel | — | 60 V | 25A (Tc) | 45mOhm @ 12A, 10V | 3V @ 250µA | 37 nC @ 10 V | 3384 pF @ 30 V | 10V | ±20V | — |
|
2N4351 TO-72 4L
N-CHANNEL ENHANCEMENT MODE MOSFE |
Linear Integrated Systems, Inc. | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-206AF, TO-72-4 Metal Can | MOSFET (Metal Oxide) | TO-72-4 | 350mW (Ta) | N-Channel | — | 25 V | 20mA | 300Ohm @ 100µA, 10V | 5V @ 10µA | — | — | 10V | ±30V | — |
|
2N6660
MOSFET N-CH 60V 410MA TO39 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | MOSFET (Metal Oxide) | TO-39 | 6.25W (Tc) | N-Channel | — | 60 V | 410mA (Ta) | 3Ohm @ 1A, 10V | 2V @ 1mA | — | 50 pF @ 24 V | 5V, 10V | ±20V | — |
|
2N6660
MOSFET N-CH 60V 1.1A TO39 |
Solid State Inc. | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | MOSFET (Metal Oxide) | TO-39 | 6.25W (Tc) | N-Channel | — | 60 V | 1.1A (Tc) | 3Ohm @ 1A, 10V | 2V @ 1mA | — | 50 pF @ 25 V | 5V, 10V | ±40V | — |
|
2N6660
MOSFET N-CH 60V 990MA TO205AD |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | MOSFET (Metal Oxide) | TO-205AD (TO-39) | 725mW (Ta), 6.25W (Tc) | N-Channel | — | 60 V | 990mA (Tc) | 3Ohm @ 1A, 10V | 2V @ 1mA | — | 50 pF @ 25 V | 5V, 10V | ±20V | — |
|
2N6660-2
MOSFET N-CH 60V 990MA TO205AD |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | MOSFET (Metal Oxide) | TO-205AD (TO-39) | 725mW (Ta), 6.25W (Tc) | N-Channel | — | 60 V | 990mA (Tc) | 3Ohm @ 1A, 10V | 2V @ 1mA | — | 50 pF @ 25 V | 5V, 10V | ±20V | — |
|
2N6660-E3
MOSFET N-CH 60V 990MA TO205AD |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | MOSFET (Metal Oxide) | TO-205AD (TO-39) | 725mW (Ta), 6.25W (Tc) | N-Channel | — | 60 V | 990mA (Tc) | 3Ohm @ 1A, 10V | 2V @ 1mA | — | 50 pF @ 25 V | 5V, 10V | ±20V | — |
|
2N6660JTVP02
MOSFET N-CH 60V 990MA TO205AD |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | MOSFET (Metal Oxide) | TO-205AD (TO-39) | 725mW (Ta), 6.25W (Tc) | N-Channel | — | 60 V | 990mA (Tc) | 3Ohm @ 1A, 10V | 2V @ 1mA | — | 50 pF @ 25 V | 5V, 10V | ±20V | — |
|
2N6660JTX02
MOSFET N-CH 60V 990MA TO205AD |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | MOSFET (Metal Oxide) | TO-205AD (TO-39) | 725mW (Ta), 6.25W (Tc) | N-Channel | — | 60 V | 990mA (Tc) | 3Ohm @ 1A, 10V | 2V @ 1mA | — | 50 pF @ 25 V | 5V, 10V | ±20V | — |
|
2N6660JTXL02
MOSFET N-CH 60V 990MA TO205AD |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | MOSFET (Metal Oxide) | TO-205AD (TO-39) | 725mW (Ta), 6.25W (Tc) | N-Channel | — | 60 V | 990mA (Tc) | 3Ohm @ 1A, 10V | 2V @ 1mA | — | 50 pF @ 25 V | 5V, 10V | ±20V | — |
|
2N6660JTXP02
MOSFET N-CH 60V 990MA TO205AD |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | MOSFET (Metal Oxide) | TO-205AD (TO-39) | 725mW (Ta), 6.25W (Tc) | N-Channel | — | 60 V | 990mA (Tc) | 3Ohm @ 1A, 10V | 2V @ 1mA | — | 50 pF @ 25 V | 5V, 10V | ±20V | — |
|
2N6660JTXV02
MOSFET N-CH 60V 990MA TO205AD |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | MOSFET (Metal Oxide) | TO-205AD (TO-39) | 725mW (Ta), 6.25W (Tc) | N-Channel | — | 60 V | 990mA (Tc) | 3Ohm @ 1A, 10V | 2V @ 1mA | — | 50 pF @ 25 V | 5V, 10V | ±20V | — |
|
2N6661
MOSFET N-CH 90V 350MA TO39 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | MOSFET (Metal Oxide) | TO-39 | 6.25W (Tc) | N-Channel | — | 90 V | 350mA (Tj) | 4Ohm @ 1A, 10V | 2V @ 1mA | — | 50 pF @ 24 V | 5V, 10V | ±20V | — |
|
2N6661
MOSFET N-CH 90V 900MA TO39 |
Solid State Inc. | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | MOSFET (Metal Oxide) | TO-39 | 6.25W (Tc) | N-Channel | — | 90 V | 900mA (Tc) | 4mOhm @ 1A, 10V | 2V @ 1mA | — | 50 pF @ 25 V | 5V, 10V | ±40V | — |
|
2N6661
MOSFET N-CH 90V 860MA TO39 |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | MOSFET (Metal Oxide) | TO-39 | 725mW (Ta), 6.25W (Tc) | N-Channel | — | 90 V | 860mA (Tc) | 4Ohm @ 1A, 10V | 2V @ 1mA | — | 50 pF @ 25 V | 5V, 10V | ±20V | — |
|
2N6661-2
MOSFET N-CH 90V 860MA TO39 |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | MOSFET (Metal Oxide) | TO-39 | 725mW (Ta), 6.25W (Tc) | N-Channel | — | 90 V | 860mA (Tc) | 4Ohm @ 1A, 10V | 2V @ 1mA | — | 50 pF @ 25 V | 5V, 10V | ±20V | — |
|
2N6661-E3
MOSFET N-CH 90V 860MA TO39 |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | MOSFET (Metal Oxide) | TO-39 | 725mW (Ta), 6.25W (Tc) | N-Channel | — | 90 V | 860mA (Tc) | 4Ohm @ 1A, 10V | 2V @ 1mA | — | 50 pF @ 25 V | 5V, 10V | ±20V | — |
|
2N6661JAN02
MOSFET N-CH 90V 860MA TO39 |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | MOSFET (Metal Oxide) | TO-39 | 725mW (Ta), 6.25W (Tc) | N-Channel | — | 90 V | 860mA (Tc) | 4Ohm @ 1A, 10V | 2V @ 1mA | — | 50 pF @ 25 V | 5V, 10V | ±20V | — |
|
2N6661JTVP02
MOSFET N-CH 90V 860MA TO39 |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | MOSFET (Metal Oxide) | TO-39 | 725mW (Ta), 6.25W (Tc) | N-Channel | — | 90 V | 860mA (Tc) | 4Ohm @ 1A, 10V | 2V @ 1mA | — | 50 pF @ 25 V | 5V, 10V | ±20V | — |
|
2N6661JTX02
MOSFET N-CH 90V 860MA TO39 |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | MOSFET (Metal Oxide) | TO-39 | 725mW (Ta), 6.25W (Tc) | N-Channel | — | 90 V | 860mA (Tc) | 4Ohm @ 1A, 10V | 2V @ 1mA | — | 50 pF @ 25 V | 5V, 10V | ±20V | — |
|
2N6661JTXL02
MOSFET N-CH 90V 860MA TO39 |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | MOSFET (Metal Oxide) | TO-39 | 725mW (Ta), 6.25W (Tc) | N-Channel | — | 90 V | 860mA (Tc) | 4Ohm @ 1A, 10V | 2V @ 1mA | — | 50 pF @ 25 V | 5V, 10V | ±20V | — |
|
2N6661JTXP02
MOSFET N-CH 90V 860MA TO39 |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | MOSFET (Metal Oxide) | TO-39 | 725mW (Ta), 6.25W (Tc) | N-Channel | — | 90 V | 860mA (Tc) | 4Ohm @ 1A, 10V | 2V @ 1mA | — | 50 pF @ 25 V | 5V, 10V | ±20V | — |
|
2N6661JTXV02
MOSFET N-CH 90V 860MA TO39 |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | MOSFET (Metal Oxide) | TO-39 | 725mW (Ta), 6.25W (Tc) | N-Channel | — | 90 V | 860mA (Tc) | 4Ohm @ 1A, 10V | 2V @ 1mA | — | 50 pF @ 25 V | 5V, 10V | ±20V | — |
|
2N6755
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
2N6756
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | TO-204AA | 4W (Ta), 75W (Tc) | N-Channel | — | 100 V | 14A (Tc) | 210mOhm @ 14A, 10V | 4V @ 250µA | 35 nC @ 10 V | — | 10V | ±20V | — |
|
2N6756
MOSFET N-CH 100V 14A TO204AA |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | TO-204AA | 4W (Ta), 75W (Tc) | N-Channel | — | 100 V | 14A (Tc) | 210mOhm @ 14A, 10V | 4V @ 250µA | 35 nC @ 10 V | — | 10V | ±20V | — |
|
2N6757
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | TO-3 | 75W (Tc) | N-Channel | — | 150 V | 8A (Tc) | 600mOhm @ 5A, 10V | 4V @ 1mA | — | 800 pF @ 25 V | 10V | ±20V | — |
|
2N6758
MOSFET N-CH 200V 9A TO204AA |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | TO-204AA | 4W (Ta), 75W (Tc) | N-Channel | — | 200 V | 9A (Tc) | 490mOhm @ 9A, 10V | 4V @ 250µA | 39 nC @ 10 V | — | 10V | ±20V | — |
|
2N6759
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA | MOSFET (Metal Oxide) | TO-3 | 75W (Tc) | N-Channel | — | 350 V | 4.5A (Tc) | 1.5Ohm @ 3A, 10V | 4V @ 1mA | — | 800 pF @ 25 V | 10V | ±20V | — |
|
2N6760
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | TO-204AA | 4W (Ta), 75W (Tc) | N-Channel | — | 400 V | 5.5A (Tc) | 1.22Ohm @ 5.5A, 10V | 4V @ 250µA | 39 nC @ 10 V | — | 10V | ±20V | — |
|
2N6760
MOSFET N-CH 400V 5.5A TO204AA |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | TO-204AA | 4W (Ta), 75W (Tc) | N-Channel | — | 400 V | 5.5A (Tc) | 1.22Ohm @ 5.5A, 10V | 4V @ 250µA | 39 nC @ 10 V | — | 10V | ±20V | — |
|
2N6760TXV
5.5A, 400V, 1OHM, N-CHANNEL |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA | MOSFET (Metal Oxide) | TO-3 | 75W (Tc) | N-Channel | — | 400 V | 5.5A (Tc) | 1Ohm @ 3.5A, 10V | 4V @ 1mA | — | 800 pF @ 25 V | 10V | ±20V | — |
|
2N6761
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | TO-3 | 75W (Tc) | N-Channel | — | 450 V | 4A (Tc) | 2Ohm @ 2.5A, 10V | 4V @ 1mA | — | 800 pF @ 25 V | 10V | ±20V | — |
|
2N6762
MOSFET N-CH 500V 4.5A TO204AA |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | TO-204AA | 4W (Ta), 75W (Tc) | N-Channel | — | 500 V | 4.5A (Tc) | 1.8Ohm @ 4.5A, 10V | 4V @ 250µA | 40 nC @ 10 V | — | 10V | ±20V | — |
|
2N6763
POWER FIELD-EFFECT TRANSISTOR, N |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
2N6764
MOSFET N-CH 100V 38A TO3 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-204AE | MOSFET (Metal Oxide) | TO-3 | 4W (Ta), 150W (Tc) | N-Channel | — | 100 V | 38A (Tc) | 65mOhm @ 38A, 10V | 4V @ 250µA | 125 nC @ 10 V | — | 10V | ±20V | — |
|
2N6764T1
MOSFET N-CH 100V 38A TO3 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-204AE | MOSFET (Metal Oxide) | TO-3 | 4W (Ta), 150W (Tc) | N-Channel | — | 100 V | 38A (Tc) | 65mOhm @ 38A, 10V | 4V @ 250µA | 125 nC @ 10 V | — | 10V | ±20V | — |
|
2N6766
MOSFET N-CH 200V 30A TO3 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-204AE | MOSFET (Metal Oxide) | TO-3 | 4W (Ta), 150W (Tc) | N-Channel | — | 200 V | 30A (Tc) | 90mOhm @ 30A, 10V | 4V @ 250µA | 115 nC @ 10 V | — | 10V | ±20V | — |
|
2N6766T1
MOSFET N-CH 200V 30A TO254AA |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-254-3, TO-254AA (Straight Leads) | MOSFET (Metal Oxide) | TO-254AA | 4W (Ta), 150W (Tc) | N-Channel | — | 200 V | 30A (Tc) | 90mOhm @ 30A, 10V | 4V @ 250µA | 115 nC @ 10 V | — | 10V | ±20V | — |
|
2N6767
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | TO-3 | 150W (Tc) | N-Channel | — | 350 V | 12A (Tc) | 400mOhm @ 7.75A, 10V | 4V @ 1mA | — | 3000 pF @ 25 V | 10V | ±20V | — |
|
2N6768
MOSFET N-CH 400V 14A TO3 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-204AE | MOSFET (Metal Oxide) | TO-3 | 4W (Ta), 150W (Tc) | N-Channel | — | 400 V | 14A (Tc) | 400mOhm @ 14A, 10V | 4V @ 250µA | 110 nC @ 10 V | — | 10V | ±20V | — |
|
2N6768T1
MOSFET N-CH 400V 14A TO254AA |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-254-3, TO-254AA (Straight Leads) | MOSFET (Metal Oxide) | TO-254AA | 4W (Ta), 150W (Tc) | N-Channel | — | 400 V | 14A (Ta) | 400mOhm @ 14A, 10V | 4V @ 250µA | 110 nC @ 10 V | — | 10V | ±20V | — |
|
2N6770
MOSFET N-CH 500V 12A TO3 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-204AE | MOSFET (Metal Oxide) | TO-3 | 4W (Ta), 150W (Tc) | N-Channel | — | 500 V | 12A (Tc) | 500mOhm @ 12A, 10V | 4V @ 250µA | 120 nC @ 10 V | — | 10V | ±20V | — |
|
2N6770T1
MOSFET N-CH 500V 12A TO254AA |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-254-3, TO-254AA (Straight Leads) | MOSFET (Metal Oxide) | TO-254AA | 4W (Ta), 150W (Tc) | N-Channel | — | 500 V | 12A (Ta) | 500mOhm @ 12A, 10V | 4V @ 250µA | 120 nC @ 10 V | — | 10V | ±20V | — |