Transistörler - FET, MOSFET - Tekil
- Komponent
- 40,131
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Komponentler
10,000 sonuç · Sayfa 194/200| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FDH5500-F085
MOSFET N-CH 55V 75A TO247-3 |
onsemi | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 375W (Tc) | N-Channel | — | 55 V | 75A (Tc) | 7mOhm @ 75A, 10V | 4V @ 250µA | 268 nC @ 20 V | 3565 pF @ 25 V | 10V | ±20V | — |
|
FDH633605
MOSFET N-CH DO-35 |
onsemi | Obsolete | — | Through Hole | DO-204AH, DO-35, Axial | MOSFET (Metal Oxide) | DO-35 | — | N-Channel | — | — | — | — | — | — | — | — | — | — |
|
FDI025N06
MOSFET N-CH 60V 265A I2PAK |
Rochester Electronics | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 395W (Tc) | N-Channel | — | 60 V | 265A (Tc) | 2.5mOhm @ 75A, 10V | 4.5V @ 250µA | 226 nC @ 10 V | 14885 pF @ 25 V | 10V | ±20V | — |
|
FDI025N06
MOSFET N-CH 60V 265A I2PAK |
onsemi | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 395W (Tc) | N-Channel | — | 60 V | 265A (Tc) | 2.5mOhm @ 75A, 10V | 4.5V @ 250µA | 226 nC @ 10 V | 14885 pF @ 25 V | 10V | ±20V | — |
|
FDI030N06
MOSFET N-CH 60V 120A I2PAK |
onsemi | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 231W (Tc) | N-Channel | — | 60 V | 120A (Tc) | 3.2mOhm @ 75A, 10V | 4.5V @ 250µA | 151 nC @ 10 V | 9815 pF @ 25 V | 10V | ±20V | — |
|
FDI038AN06A0
MOSFET N-CH 60V 17A/80A I2PAK |
Rochester Electronics | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 310W (Tc) | N-Channel | — | 60 V | 17A (Ta), 80A (Tc) | 3.8mOhm @ 80A, 10V | 4V @ 250µA | 124 nC @ 10 V | 6400 pF @ 25 V | 6V, 10V | ±20V | — |
|
FDI038AN06A0
MOSFET N-CH 60V 17A/80A I2PAK |
onsemi | Last Time Buy | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 310W (Tc) | N-Channel | — | 60 V | 17A (Ta), 80A (Tc) | 3.8mOhm @ 80A, 10V | 4V @ 250µA | 124 nC @ 10 V | 6400 pF @ 25 V | 6V, 10V | ±20V | — |
|
FDI038AN06A0_NL
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 310W (Tc) | N-Channel | — | 60 V | 17A (Ta), 80A (Tc) | 3.8mOhm @ 80A, 10V | 4V @ 250µA | 124 nC @ 10 V | 6400 pF @ 25 V | 6V, 10V | ±20V | — |
|
FDI040N06
MOSFET N-CH 60V 120A I2PAK |
Rochester Electronics | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 231W (Tc) | N-Channel | — | 60 V | 120A (Tc) | 4mOhm @ 75A, 10V | 4.5V @ 250µA | 133 nC @ 10 V | 8235 pF @ 25 V | 10V | ±20V | — |
|
FDI040N06
MOSFET N-CH 60V 120A I2PAK |
onsemi | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 231W (Tc) | N-Channel | — | 60 V | 120A (Tc) | 4mOhm @ 75A, 10V | 4.5V @ 250µA | 133 nC @ 10 V | 8235 pF @ 25 V | 10V | ±20V | — |
|
FDI045N10A
MOSFET N-CH 100V 120A I2PAK-3 |
Rochester Electronics | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 263W (Tc) | N-Channel | — | 100 V | 120A (Tc) | 4.5mOhm @ 100A, 10V | 4V @ 250µA | 74 nC @ 10 V | 5270 pF @ 50 V | 10V | ±20V | — |
|
FDI045N10A
MOSFET N-CH 100V 120A I2PAK |
onsemi | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 263W (Tc) | N-Channel | — | 100 V | 120A (Tc) | 4.5mOhm @ 100A, 10V | 4V @ 250µA | 74 nC @ 10 V | 5270 pF @ 50 V | 10V | ±20V | — |
|
FDI045N10A-F102
MOSFET N-CH 100V 120A I2PAK |
onsemi | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 263W (Tc) | N-Channel | — | 100 V | 120A (Tc) | 4.5mOhm @ 100A, 10V | 4V @ 250µA | 74 nC @ 10 V | 5270 pF @ 50 V | 10V | ±20V | — |
|
FDI047AN08A0
MOSFET N-CH 75V 80A I2PAK |
Rochester Electronics | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 310W (Tc) | N-Channel | — | 75 V | 80A (Tc) | 4.7mOhm @ 80A, 10V | 4V @ 250µA | 138 nC @ 10 V | 6600 pF @ 25 V | 6V, 10V | ±20V | — |
|
FDI047AN08A0
MOSFET N-CH 75V 80A I2PAK |
onsemi | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 310W (Tc) | N-Channel | — | 75 V | 80A (Tc) | 4.7mOhm @ 80A, 10V | 4V @ 250µA | 138 nC @ 10 V | 6600 pF @ 25 V | 6V, 10V | ±20V | — |
|
FDI150N10
MOSFET N-CH 100V 57A I2PAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 110W (Tc) | N-Channel | — | 100 V | 57A (Tc) | 16mOhm @ 49A, 10V | 4.5V @ 250µA | 69 nC @ 10 V | 4760 pF @ 25 V | 10V | ±20V | — |
|
FDI2532
MOSFET N-CH 150V 8A/79A I2PAK |
onsemi | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 310W (Tc) | N-Channel | — | 150 V | 8A (Ta), 79A (Tc) | 16mOhm @ 33A, 10V | 4V @ 250µA | 107 nC @ 10 V | 5870 pF @ 25 V | 6V, 10V | ±20V | — |
|
FDI33N25TU
MOSFET N-CH 250V 33A I2PAK |
Rochester Electronics | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 235W (Tc) | N-Channel | — | 250 V | 33A (Tc) | 94mOhm @ 16.5A, 10V | 5V @ 250µA | 48 nC @ 10 V | 2135 pF @ 25 V | 10V | ±30V | — |
|
FDI33N25TU
MOSFET N-CH 250V 33A I2PAK |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 235W (Tc) | N-Channel | — | 250 V | 33A (Tc) | 94mOhm @ 16.5A, 10V | 5V @ 250µA | 48 nC @ 10 V | 2135 pF @ 25 V | 10V | ±30V | — |
|
FDI3632
MOSFET N-CH 100V 12A/80A I2PAK |
onsemi | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 310W (Tc) | N-Channel | — | 100 V | 12A (Ta), 80A (Tc) | 9mOhm @ 80A, 10V | 4V @ 250µA | 110 nC @ 10 V | 6000 pF @ 25 V | 6V, 10V | ±20V | — |
|
FDI3652
MOSFET N-CH 100V 9A/61A I2PAK |
onsemi | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 150W (Tc) | N-Channel | — | 100 V | 9A (Ta), 61A (Tc) | 16mOhm @ 61A, 10V | 4V @ 250µA | 53 nC @ 10 V | 2880 pF @ 25 V | 6V, 10V | ±20V | — |
|
FDI8441
MOSFET N-CH 40V 26A/80A I2PAK |
Rochester Electronics | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 300W (Tc) | N-Channel | — | 40 V | 26A (Ta), 80A (Tc) | 2.7mOhm @ 80A, 10V | 4V @ 250µA | 280 nC @ 10 V | 15 pF @ 25 V | 10V | ±20V | — |
|
FDI8441
MOSFET N-CH 40V 26A/80A I2PAK |
onsemi | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 300W (Tc) | N-Channel | — | 40 V | 26A (Ta), 80A (Tc) | 2.7mOhm @ 80A, 10V | 4V @ 250µA | 280 nC @ 10 V | 15000 pF @ 25 V | 10V | ±20V | — |
|
FDI8441_F085
MOSFET N-CH 40V 26A/80A I2PAK |
onsemi | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 300W (Tc) | N-Channel | — | 40 V | 26A (Ta), 80A (Tc) | 4.7mOhm @ 80A, 10V | 4V @ 250µA | 280 nC @ 10 V | 15000 pF @ 25 V | 10V | ±20V | — |
|
FDI8442
MOSFET N-CH 40V 23A/80A I2PAK |
Rochester Electronics | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 254W (Tc) | N-Channel | — | 40 V | 23A (Ta), 80A (Tc) | 2.9mOhm @ 80A, 10V | 4V @ 250µA | 235 nC @ 10 V | 12200 pF @ 25 V | 10V | ±20V | — |
|
FDI8442
MOSFET N-CH 40V 23A/80A I2PAK |
onsemi | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 254W (Tc) | N-Channel | — | 40 V | 23A (Ta), 80A (Tc) | 2.9mOhm @ 80A, 10V | 4V @ 250µA | 235 nC @ 10 V | 12200 pF @ 25 V | 10V | ±20V | — |
|
FDI9406-F085
FDI9406 - N-CHANNEL POWERTRENCH |
Rochester Electronics | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 176W (Tj) | N-Channel | — | 40 V | 110A (Tc) | 2.2mOhm @ 80A, 10V | 4V @ 250µA | 138 nC @ 10 V | 7710 pF @ 25 V | 10V | ±20V | — |
|
FDI9406-F085
MOSFET N-CH 40V 110A I2PAK |
Flip Electronics | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 176W (Tj) | N-Channel | — | 40 V | 110A (Tc) | 2.2mOhm @ 80A, 10V | 4V @ 250µA | 138 nC @ 10 V | 7710 pF @ 25 V | 10V | ±20V | — |
|
FDI9409-F085
FDI9409 - N-CHANNEL POWERTRENCH |
Rochester Electronics | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 94W (Tj) | N-Channel | — | 40 V | 80A (Tc) | 3.8mOhm @ 80A, 10V | 4V @ 250µA | 56 nC @ 10 V | 2980 pF @ 25 V | 10V | ±20V | — |
|
FDI9409-F085
MOSFET N-CH 40V 80A I2PAK |
onsemi | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | 94W (Tj) | N-Channel | — | 40 V | 80A (Tc) | 3.8mOhm @ 80A, 10V | 4V @ 250µA | 56 nC @ 10 V | 2980 pF @ 25 V | 10V | ±20V | — |
|
FDJ127P
MOSFET P-CH 20V 4.1A SC75-6 FLMP |
Rochester Electronics | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SC-75-6 FLMP | MOSFET (Metal Oxide) | SC75-6 FLMP | 1.6W (Ta) | P-Channel | — | 20 V | 4.1A (Ta) | 60mOhm @ 4.1A, 4.5V | 1.5V @ 250µA | 10 nC @ 4.5 V | 780 pF @ 10 V | 1.8V, 4.5V | ±8V | — |
|
FDJ127P
MOSFET P-CH 20V 4.1A SC75-6 FLMP |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SC-75-6 FLMP | MOSFET (Metal Oxide) | SC75-6 FLMP | 1.6W (Ta) | P-Channel | — | 20 V | 4.1A (Ta) | 60mOhm @ 4.1A, 4.5V | 1.5V @ 250µA | 10 nC @ 4.5 V | 780 pF @ 10 V | 1.8V, 4.5V | ±8V | — |
|
FDJ128N
MOSFET N-CH 20V 5.5A SC75-6 FLMP |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SC-75-6 FLMP | MOSFET (Metal Oxide) | SC75-6 FLMP | 1.6W (Ta) | N-Channel | — | 20 V | 5.5A (Ta) | 35mOhm @ 5.5A, 4.5V | 1.5V @ 250µA | 8 nC @ 5 V | 543 pF @ 10 V | 2.5V, 4.5V | ±12V | — |
|
FDJ128N_F077
MOSFET N-CH 20V 5.5A SC75-6 FLMP |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SC-75-6 FLMP | MOSFET (Metal Oxide) | SC75-6 FLMP | 1.6W (Ta) | N-Channel | — | 20 V | 5.5A (Ta) | 35mOhm @ 5.5A, 4.5V | 1.5V @ 250µA | 8 nC @ 5 V | 543 pF @ 10 V | 2.5V, 4.5V | ±12V | — |
|
FDJ129P
MOSFET P-CH 20V 4.2A SC75-6 FLMP |
Rochester Electronics | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SC-75-6 FLMP | MOSFET (Metal Oxide) | SC75-6 FLMP | 1.6W (Ta) | P-Channel | — | 20 V | 4.2A (Ta) | 70mOhm @ 4.2A, 4.5V | 1.5V @ 250µA | 6 nC @ 4.5 V | 780 pF @ 10 V | 2.5V, 4.5V | ±12V | — |
|
FDJ129P
MOSFET P-CH 20V 4.2A SC75-6 FLMP |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SC-75-6 FLMP | MOSFET (Metal Oxide) | SC75-6 FLMP | 1.6W (Ta) | P-Channel | — | 20 V | 4.2A (Ta) | 70mOhm @ 4.2A, 4.5V | 1.5V @ 250µA | 6 nC @ 4.5 V | 780 pF @ 10 V | 2.5V, 4.5V | ±12V | — |
|
FDJ129P_F077
MOSFET P-CH 20V 4.2A SC75-6 FLMP |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SC-75-6 FLMP | MOSFET (Metal Oxide) | SC75-6 FLMP | 1.6W (Ta) | P-Channel | — | 20 V | 4.2A (Ta) | 70mOhm @ 4.2A, 4.5V | 1.5V @ 250µA | 6 nC @ 4.5 V | 780 pF @ 10 V | 2.5V, 4.5V | ±12V | — |
|
FDL100N50F
MOSFET N-CH 500V 100A TO264-3 |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264-3 | 2500W (Tc) | N-Channel | — | 500 V | 100A (Tc) | 55mOhm @ 50A, 10V | 5V @ 250µA | 238 nC @ 10 V | 12000 pF @ 25 V | 10V | ±30V | — |
|
FDM100-0045SP
MOSFET N-CH 55V 100A I4PAC |
Littelfuse | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | i4-Pac™-5 | MOSFET (Metal Oxide) | ISOPLUS i4-PAC™ | — | N-Channel | — | 55 V | 100A (Tc) | 7.2mOhm @ 80A, 10V | 4V @ 1mA | 100 nC @ 10 V | — | 10V | ±20V | — |
|
FDM15-06KC5
MOSFET N-CH 600V 15A I4PAC |
Littelfuse | Active | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUSi5-Pak™ | MOSFET (Metal Oxide) | ISOPLUS i4-PAC™ | — | N-Channel | — | 600 V | 15A (Tc) | 165mOhm @ 12A, 10V | 3.5V @ 790µA | 52 nC @ 10 V | 2000 pF @ 100 V | 10V | ±20V | — |
|
FDM21-05QC
MOSFET N-CH 500V 21A I4PAC |
Littelfuse | Active | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | MOSFET (Metal Oxide) | ISOPLUS i4-PAC™ | — | N-Channel | — | 500 V | 21A (Tc) | 220mOhm @ 15A, 10V | 4.5V @ 250µA | 95 nC @ 10 V | — | 10V | ±20V | — |
|
FDM3622
MOSFET N-CH 100V 4.4A 8MLP |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | MOSFET (Metal Oxide) | 8-MLP (3.3x3.3) | 2.1W (Ta) | N-Channel | — | 100 V | 4.4A (Ta) | 60mOhm @ 4.4A, 10V | 4V @ 250µA | 17 nC @ 10 V | 1090 pF @ 25 V | 6V, 10V | ±20V | — |
|
FDM3622
POWER FIELD-EFFECT TRANSISTOR, 4 |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | MOSFET (Metal Oxide) | 8-MLP (3.3x3.3) | 2.1W (Ta) | N-Channel | — | 100 V | 4.4A (Ta) | 60mOhm @ 4.4A, 10V | 4V @ 250µA | 17 nC @ 10 V | 1090 pF @ 25 V | 6V, 10V | ±20V | — |
|
FDM47-06KC5
MOSFET N-CH 600V 47A I4PAC |
Littelfuse | Active | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUSi5-Pak™ | MOSFET (Metal Oxide) | ISOPLUS i4-PAC™ | — | N-Channel | — | 600 V | 47A (Tc) | 45mOhm @ 44A, 10V | 3.5V @ 3mA | 190 nC @ 10 V | 6800 pF @ 100 V | 10V | ±20V | — |
|
FDM606P
MOSFET P-CH 20V 6.8A 8MLP |
Rochester Electronics | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead Exposed Pad | MOSFET (Metal Oxide) | 8-MLP, MicroFET (3x2) | 1.92W (Ta) | P-Channel | — | 20 V | 6.8A (Tc) | 30mOhm @ 6.8A, 4.5V | 1.5V @ 250µA | 30 nC @ 4.5 V | 2200 pF @ 10 V | 1.8V, 4.5V | ±8V | — |
|
FDM606P
MOSFET P-CH 20V 6.8A 8MLP |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead Exposed Pad | MOSFET (Metal Oxide) | 8-MLP, MicroFET (3x2) | 1.92W (Ta) | P-Channel | — | 20 V | 6.8A (Tc) | 30mOhm @ 6.8A, 4.5V | 1.5V @ 250µA | 30 nC @ 4.5 V | 2200 pF @ 10 V | 1.8V, 4.5V | ±8V | — |
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FDM6296
MOSFET N-CH 30V 11.5A 8POWER33 |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | 8-Power33 (3x3) | 2.1W (Ta) | N-Channel | — | 30 V | 11.5A (Ta) | 10.5mOhm @ 11.5A, 10V | 3V @ 250µA | 17 nC @ 5 V | 2005 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
FDM6296-G
FDM6296 - TBD_25CH |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
FDMA008P20LZ
MOSFET P-CHANNEL 20V 12A 6PQFN |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerWDFN | MOSFET (Metal Oxide) | 6-PQFN (2x2) | 2.4W (Ta) | P-Channel | — | 20 V | 12A (Ta) | 13mOhm @ 2.5A, 4.5V | 1.4V @ 250µA | 39 nC @ 4.5 V | 4383 pF @ 10 V | 1.5V, 4.5V | ±8V | — |
|
FDMA0104
TRANS MOSFET N-CH 20V 9.4A 6PIN |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | MOSFET (Metal Oxide) | 6-MicroFET (2x2) | 1.9W (Ta) | N-Channel | — | 20 V | 9.4A (Ta) | 14.5mOhm @ 9.4A, 4.5V | 1V @ 250µA | 17.5 nC @ 4.5 V | 1680 pF @ 10 V | — | — | — |