Transistörler - FET, MOSFET - Tekil
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Komponentler
10,000 sonuç · Sayfa 128/200| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BUZ76A
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220-3 | 40W (Tc) | N-Channel | — | 400 V | 2.6A (Tc) | 2.5Ohm @ 1.5A, 10V | 4V @ 1mA | — | 500 pF @ 25 V | 10V | ±20V | — |
|
BUZ77B
N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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BUZ80A
MOSFET N-CH 800V 3.6A TO220AB |
Infineon Technologies | Market | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | 100W (Tc) | N-Channel | — | 800 V | 3.6A (Tc) | 3Ohm @ 2A, 10V | 4V @ 1mA | — | 1350 pF @ 25 V | 10V | ±20V | — |
|
BVSS123LT1G
MOSFET N-CH 100V 170MA SOT23-3 |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | SOT-23-3 (TO-236) | 225mW (Ta) | N-Channel | — | 100 V | 170mA (Ta) | 6Ohm @ 100mA, 10V | 2.8V @ 1mA | — | 20 pF @ 25 V | 10V | ±20V | — |
|
BVSS138LT1G
MOSFET N-CH 50V 200MA SOT23-3 |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | SOT-23-3 (TO-236) | 225mW (Ta) | N-Channel | — | 50 V | 200mA (Ta) | 3.5Ohm @ 200mA, 5V | 1.5V @ 1mA | — | 50 pF @ 25 V | 5V | ±20V | — |
|
BVSS138LT3G
MOSFET N-CH 50V 200MA SOT-23-3 |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | SOT-23-3 (TO-236) | 225mW (Ta) | N-Channel | — | 50 V | 200mA (Ta) | 3.5Ohm @ 200mA, 5V | 1.5V @ 1mA | — | 50 pF @ 25 V | — | ±20V | — |
|
BVSS84LT1G
MOSFET P-CH 50V 130MA SOT23-3 |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | SOT-23-3 (TO-236) | 225mW (Ta) | P-Channel | — | 50 V | 130mA (Ta) | 10Ohm @ 100mA, 5V | 2V @ 250µA | 2.2 nC @ 10 V | 36 pF @ 5 V | 5V | ±20V | — |
|
BVSS84LT3G
MOSFET P-CH 50V 130MA SOT-23-3 |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | SOT-23-3 (TO-236) | 225mW (Ta) | P-Channel | — | 50 V | 130mA (Ta) | 10Ohm @ 100mA, 5V | 2V @ 250µA | 2.2 nC @ 10 V | 36 pF @ 5 V | 5V | ±20V | — |
|
BXL4001
MOSFET N-CH 75V 85A TO220 |
onsemi | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220(LS) | 1.75W (Ta), 75W (Tc) | N-Channel | — | 75 V | 85A (Ta) | 12.4mOhm @ 43A, 10V | 4V @ 1mA | 115 nC @ 10 V | 6700 pF @ 20 V | 10V | ±20V | — |
|
BXL4004-1E
BXL4004 - N-CHANNEL POWER MOSFET |
Rochester Electronics | Active | 150°C | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220-3 | 75W (Tc) | N-Channel | — | 40 V | 100A (Ta) | 3.9mOhm @ 50A, 10V | — | 140 nC @ 10 V | 8200 pF @ 20 V | 4.5V, 10V | ±20V | — |
|
BXL4004-1E
MOSFET N-CH 40V 100A TO220-3 |
onsemi | Obsolete | 150°C | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220-3 | 75W (Tc) | N-Channel | — | 40 V | 100A (Ta) | 3.9mOhm @ 50A, 10V | — | 140 nC @ 10 V | 8200 pF @ 20 V | 4.5V, 10V | ±20V | — |
|
C2M0025120D
SICFET N-CH 1200V 90A TO247-3 |
Wolfspeed | Not For New Designs | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | 463W (Tc) | N-Channel | — | 1200 V | 90A (Tc) | 34mOhm @ 50A, 20V | 2.4V @ 10mA | 161 nC @ 20 V | 2788 pF @ 1000 V | 20V | +25V, -10V | — |
|
C2M0040120D
SICFET N-CH 1200V 60A TO247-3 |
Wolfspeed | Not For New Designs | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | 330W (Tc) | N-Channel | — | 1200 V | 60A (Tc) | 52mOhm @ 40A, 20V | 2.8V @ 10mA | 115 nC @ 20 V | 1893 pF @ 1000 V | 20V | +25V, -10V | — |
|
C2M0045170D
SICFET N-CH 1700V 72A TO247-3 |
Wolfspeed | Not For New Designs | -40°C ~ 150°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | 520W (Tc) | N-Channel | — | 1700 V | 72A (Tc) | 70mOhm @ 50A, 20V | 4V @ 18mA | 188 nC @ 20 V | 3672 pF @ 1000 V | 20V | +25V, -10V | — |
|
C2M0045170P
SICFET N-CH 1700V 72A TO247-4 |
Wolfspeed | Not For New Designs | -40°C ~ 150°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | 520W (Tc) | N-Channel | — | 1700 V | 72A (Tc) | 59mOhm @ 50A, 20V | 4V @ 18mA | 188 nC @ 20 V | 3672 pF @ 1000 V | 20V | +25V, -10V | — |
|
C2M0080120D
SICFET N-CH 1200V 36A TO247-3 |
Wolfspeed | Not For New Designs | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | 192W (Tc) | N-Channel | — | 1200 V | 36A (Tc) | 98mOhm @ 20A, 20V | 4V @ 5mA | 62 nC @ 5 V | 950 pF @ 1000 V | 20V | +25V, -10V | — |
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C2M0080170P
SICFET N-CH 1700V 40A TO247-4 |
Wolfspeed | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | 277W (Tc) | N-Channel | — | 1700 V | 40A (Tc) | 125mOhm @ 28A, 20V | 4V @ 10mA | 120 nC @ 20 V | 2250 pF @ 1000 V | 20V | +25V, -10V | — |
|
C2M0160120D
SICFET N-CH 1200V 19A TO247-3 |
Wolfspeed | Not For New Designs | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | 125W (Tc) | N-Channel | — | 1200 V | 19A (Tc) | 196mOhm @ 10A, 20V | 2.5V @ 500µA | 32.6 nC @ 20 V | 527 pF @ 800 V | 20V | +25V, -10V | — |
|
C2M0280120D
SICFET N-CH 1200V 10A TO247-3 |
Wolfspeed | Not For New Designs | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | 62.5W (Tc) | N-Channel | — | 1200 V | 10A (Tc) | 370mOhm @ 6A, 20V | 2.8V @ 1.25mA (Typ) | 20.4 nC @ 20 V | 259 pF @ 1000 V | 20V | +25V, -10V | — |
|
C2M1000170D
SICFET N-CH 1700V 4.9A TO247-3 |
Wolfspeed | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | 69W (Tc) | N-Channel | — | 1700 V | 4.9A (Tc) | 1.1Ohm @ 2A, 20V | 2.4V @ 100µA | 13 nC @ 20 V | 191 pF @ 1000 V | 20V | +25V, -10V | — |
|
C2M1000170J
SICFET N-CH 1700V 5.3A D2PAK |
Wolfspeed | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-7 (Straight Leads) | SiCFET (Silicon Carbide) | D2PAK (7-Lead) | 78W (Tc) | N-Channel | — | 1700 V | 5.3A (Tc) | 1.4Ohm @ 2A, 20V | 3.1V @ 500µA (Typ) | 13 nC @ 20 V | 200 pF @ 1000 V | 20V | +25V, -10V | — |
|
C2M1000170J-TR
SICFET N-CH 1700V 5.3A D2PAK-7 |
Wolfspeed | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiCFET (Silicon Carbide) | D2PAK-7 | 78W (Tc) | N-Channel | — | 1700 V | 5.3A (Tc) | 1.4Ohm @ 2A, 20V | 3.1V @ 500µA (Typ) | 13 nC @ 20 V | 200 pF @ 1000 V | 20V | +25V, -10V | — |
|
C3M0015065D
SICFET N-CH 650V 120A TO247-3 |
Wolfspeed | Active | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | 416W (Tc) | N-Channel | — | 650 V | 120A (Tc) | 21mOhm @ 55.8A, 15V | 3.6V @ 15.5mA | 188 nC @ 15 V | 5011 pF @ 400 V | 15V | +15V, -4V | — |
|
C3M0015065K
SICFET N-CH 650V 120A TO247-4L |
Wolfspeed | Active | -40°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | 416W (Tc) | N-Channel | — | 650 V | 120A (Tc) | 21mOhm @ 55.8A, 15V | 3.6V @ 15.5mA | 188 nC @ 15 V | 5011 pF @ 400 V | 15V | +15V, -4V | — |
|
C3M0016120D
SICFET N-CH 1200V 115A TO247-3 |
Wolfspeed | Active | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | 556W (Tc) | N-Channel | — | 1200 V | 115A (Tc) | 22.3mOhm @ 75A, 15V | 3.6V @ 23mA | 207 nC @ 15 V | 6085 pF @ 1000 V | 15V | +15V, -4V | — |
|
C3M0016120K
SICFET N-CH 1.2KV 115A TO247-4 |
Wolfspeed | Active | -40°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | 556W (Tc) | N-Channel | — | 1200 V | 115A (Tc) | 22.3mOhm @ 75A, 15V | 3.6V @ 23mA | 211 nC @ 15 V | 6085 pF @ 1000 V | 15V | +15V, -4V | — |
|
C3M0021120D
SICFET N-CH 1200V 100A TO247-3 |
Wolfspeed | Active | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | 469W (Tc) | N-Channel | — | 1200 V | 100A (Tc) | 28.8mOhm @ 50A, 15V | 3.6V @ 17.7mA | 160 nC @ 15 V | 4818 pF @ 1000 V | 15V | +15V, -4V | — |
|
C3M0021120K
SICFET N-CH 1200V 100A TO247-4L |
Wolfspeed | Active | -40°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | 469W (Tc) | N-Channel | — | 1200 V | 100A (Tc) | 28.8mOhm @ 50A, 15V | 3.6V @ 17.7mA | 162 nC @ 15 V | 4818 pF @ 1000 V | 15V | +15V, -4V | — |
|
C3M0025065D
GEN 3 650V 25 M SIC MOSFET |
Wolfspeed | Active | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | 326W (Tc) | N-Channel | — | 650 V | 97A (Tc) | 34mOhm @ 33.5A, 15V | 3.6V @ 9.22mA | 108 nC @ 15 V | 2980 pF @ 600 V | 15V | +19V, -8V | — |
|
C3M0025065J1
650V 25 M SIC MOSFET |
Wolfspeed | Active | -40°C ~ 150°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiC (Silicon Carbide Junction Transistor) | TO-263-7 | 271W (Tc) | N-Channel | — | 650 V | 80A (Tc) | 34mOhm @ 33.5A, 15V | 3.6V @ 9.22mA | 109 nC @ 15 V | 2980 pF @ 400 V | 15V | +19V, -8V | — |
|
C3M0025065K
GEN 3 650V 25 M SIC MOSFET |
Wolfspeed | Active | -40°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | 326W (Tc) | N-Channel | — | 650 V | 97A (Tc) | 34mOhm @ 33.5A, 15V | 3.6V @ 9.22mA | 112 nC @ 15 V | 2980 pF @ 600 V | 15V | +19V, -8V | — |
|
C3M0030090K
SICFET N-CH 900V 63A TO247-4 |
Wolfspeed | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | 149W (Tc) | N-Channel | — | 900 V | 63A (Tc) | 39mOhm @ 35A, 15V | 3.5V @ 11mA | 87 nC @ 15 V | 1864 pF @ 600 V | 15V | +15V, -4V | — |
|
C3M0032120D
SICFET N-CH 1200V 63A TO247-3 |
Wolfspeed | Active | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | 283W (Tc) | N-Channel | — | 1200 V | 63A (Tc) | 43mOhm @ 40A, 15V | 3.6V @ 11.5mA | 114 nC @ 15 V | 3357 pF @ 1000 V | 15V | +15V, -4V | — |
|
C3M0032120J1
1200V 32MOHM SIC MOSFET |
Wolfspeed | Active | -40°C ~ 150°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiCFET (Silicon Carbide) | TO-263-7 | 277W (Tc) | N-Channel | — | 1200 V | 68A (Tc) | 43mOhm @ 41.4A, 15V | 3.6V @ 11.5mA | 111 nC @ 15 V | 3424 pF @ 1000 V | 15V | +15V, -4V | — |
|
C3M0032120K
SICFET N-CH 1200V 63A TO247-4L |
Wolfspeed | Active | -40°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | 283W (Tc) | N-Channel | — | 1200 V | 63A (Tc) | 43mOhm @ 40A, 15V | 3.6V @ 11.5mA | 118 nC @ 15 V | 3357 pF @ 1000 V | 15V | +15V, -4V | — |
|
C3M0040120D
1200V 40MOHM SIC MOSFET |
Wolfspeed | Active | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | 326W (Tc) | N-Channel | — | 1200 V | 66A (Tc) | 53.5mOhm @ 33.3A, 15V | 3.6V @ 9.5mA | 101 nC @ 15 V | 2900 pF @ 1000 V | 15V | +15V, -4V | — |
|
C3M0040120J1
1200V 40 M SIC MOSFET |
Wolfspeed | Active | -40°C ~ 150°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiC (Silicon Carbide Junction Transistor) | TO-263-7 | 272W (Tc) | N-Channel | — | 1200 V | 64A (Tc) | 53.5mOhm @ 33.3A, 15V | 3.6V @ 9.2mA | 94 nC @ 15 V | 2900 pF @ 1000 V | 15V | +15V, -4V | — |
|
C3M0040120J1-TR
1200V 40 M SIC MOSFET |
Wolfspeed | Active | -40°C ~ 150°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiC (Silicon Carbide Junction Transistor) | TO-263-7 | 272W (Tc) | N-Channel | — | 1200 V | 64A (Tc) | 53.5mOhm @ 33.3A, 15V | 3.6V @ 9.2mA | 94 nC @ 15 V | 2900 pF @ 1000 V | 15V | +15V, -4V | — |
|
C3M0040120K
1200V 40MOHM SIC MOSFET |
Wolfspeed | Active | -40°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | 326W (Tc) | N-Channel | — | 1200 V | 66A (Tc) | 53.5mOhm @ 33.3A, 15V | 3.6V @ 9.2mA | 99 nC @ 15 V | 2900 pF @ 1000 V | 15V | +15V, -4V | — |
|
C3M0045065D
GEN 3 650V 45 M SIC MOSFET |
Wolfspeed | Active | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | 176W (Tc) | N-Channel | — | 650 V | 49A (Tc) | 60mOhm @ 17.6A, 15V | 3.6V @ 4.84mA | 63 nC @ 15 V | 1621 pF @ 600 V | 15V | +19V, -8V | — |
|
C3M0045065J1
650V 45 M SIC MOSFET |
Wolfspeed | Active | -40°C ~ 150°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiC (Silicon Carbide Junction Transistor) | TO-263-7 | 147W (Tc) | N-Channel | — | 650 V | 47A (Tc) | 60mOhm @ 17.6A, 15V | 3.6V @ 4.84mA | 61 nC @ 15 V | 1621 pF @ 400 V | 15V | +19V, -8V | — |
|
C3M0045065K
GEN 3 650V 49A SIC MOSFET |
Wolfspeed | Active | -40°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | 176W (Tc) | N-Channel | — | 650 V | 49A (Tc) | 60mOhm @ 17.6A, 15V | 3.6V @ 4.84mA | 63 nC @ 15 V | 1621 pF @ 600 V | 15V | +19V, -8V | — |
|
C3M0060065D
SICFET N-CH 650V 37A TO247-3 |
Wolfspeed | Active | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | 150W (Tc) | N-Channel | — | 650 V | 37A (Tc) | 79mOhm @ 13.2A, 15V | 3.6V @ 5mA | 46 nC @ 15 V | 1020 pF @ 600 V | 15V | +15V, -4V | — |
|
C3M0060065J
SICFET N-CH 650V 36A TO263-7 |
Wolfspeed | Active | -40°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiCFET (Silicon Carbide) | TO-263-7 | 136W (Tc) | N-Channel | — | 650 V | 36A (Tc) | 79mOhm @ 13.2A, 15V | 3.6V @ 5mA | 46 nC @ 15 V | 1020 pF @ 600 V | 15V | +15V, -4V | — |
|
C3M0060065K
SICFET N-CH 650V 37A TO247-4L |
Wolfspeed | Active | -40°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | 150W (Tc) | N-Channel | — | 650 V | 37A (Tc) | 79mOhm @ 13.2A, 15V | 3.6V @ 5mA | 46 nC @ 15 V | 1020 pF @ 600 V | 15V | +15V, -4V | — |
|
C3M0065090D
SICFET N-CH 900V 36A TO247-3 |
Wolfspeed | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | 125W (Tc) | N-Channel | — | 900 V | 36A (Tc) | 78mOhm @ 20A, 15V | 2.1V @ 5mA | 30.4 nC @ 15 V | 660 pF @ 600 V | 15V | +18V, -8V | — |
|
C3M0065090J
SICFET N-CH 900V 35A D2PAK-7 |
Wolfspeed | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiCFET (Silicon Carbide) | D2PAK-7 | 113W (Tc) | N-Channel | — | 900 V | 35A (Tc) | 78mOhm @ 20A, 15V | 2.1V @ 5mA | 30 nC @ 15 V | 660 pF @ 600 V | 15V | +19V, -8V | — |
|
C3M0065090J-TR
SICFET N-CH 900V 35A D2PAK-7 |
Wolfspeed | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiCFET (Silicon Carbide) | D2PAK-7 | 113W (Tc) | N-Channel | — | 900 V | 35A (Tc) | 78mOhm @ 20A, 15V | 2.1V @ 5mA | 30 nC @ 15 V | 660 pF @ 600 V | 15V | +19V, -8V | — |
|
C3M0065100J
SICFET N-CH 1000V 35A D2PAK-7 |
Wolfspeed | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiCFET (Silicon Carbide) | D2PAK-7 | 113.5W (Tc) | N-Channel | — | 1000 V | 35A (Tc) | 78mOhm @ 20A, 15V | 3.5V @ 5mA | 35 nC @ 15 V | 660 pF @ 600 V | 15V | +15V, -4V | — |
|
C3M0065100J-TR
SICFET N-CH 1000V 35A TO263-7 |
Wolfspeed | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiCFET (Silicon Carbide) | TO-263-7 | 113.5W (Tc) | N-Channel | — | 1000 V | 35A (Tc) | 78mOhm @ 20A, 15V | 3.5V @ 5mA | 35 nC @ 15 V | 660 pF @ 600 V | 15V | +15V, -4V | — |