Transistörler - FET, MOSFET - Diziler
- Komponent
- 5,229
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Komponentler
5,229 sonuç · Sayfa 96/105| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SQJB60EP-T2_GE3
DUAL N-CHANNEL 60-V (D-S) 175C M |
Vishay | Active | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | 48W (Tc) | PowerPAK® SO-8 Dual | 2 N-Channel (Dual) | Standard | 60V | 30A (Tc) | 12mOhm @ 10A, 10V | 2.5V @ 250µA | 30nC @ 10V | 1600pF @ 25V | — |
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SQJB68EP-T1_GE3
MOSFET 2 N-CH 100V POWERPAK SO8 |
Vishay | Active | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | 27W | PowerPAK® SO-8 Dual | 2 N-Channel (Dual) | Standard | 100V | 11A (Tc) | 92mOhm @ 4A, 10V | 2.5V @ 250µA | 8nC @ 10V | 280pF @ 25V | — |
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SQJB70EP-T1_GE3
MOSFET 2 N-CH 100V POWERPAK SO8 |
Vishay | Active | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | 27W (Tc) | PowerPAK® SO-8 Dual | 2 N-Channel (Dual) | Standard | 100V | 11.3A (Tc) | 95mOhm @ 4A, 10V | 3.5V @ 250µA | 7nC @ 10V | 220pF @ 25V | — |
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SQJB80EP-T1_GE3
MOSFET 2 N-CH 80V POWERPAK SO8 |
Vishay | Active | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | 48W | PowerPAK® SO-8 Dual | 2 N-Channel (Dual) | Standard | 80V | 30A (Tc) | 19mOhm @ 8A, 10V | 2.5V @ 250µA | 32nC @ 10V | 1400pF @ 25V | — |
|
SQJB90EP-T1_GE3
MOSFET 2 N-CH 80V POWERPAK SO8 |
Vishay | Active | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | 48W | PowerPAK® SO-8 Dual | 2 N-Channel (Dual) | Standard | 80V | 30A (Tc) | 21.5mOhm @ 10A, 10V | 3.5V @ 250µA | 25nC @ 10V | 1200pF @ 25V | — |
|
SQJQ900E-T1_GE3
MOSFET 2 N-CH 40V POWERPAK8X8 |
Vishay | Active | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 8 x 8 Dual | 75W | PowerPAK® 8 x 8 Dual | 2 N-Channel (Dual) | Standard | 40V | 100A (Tc) | 3.9mOhm @ 20A, 10V | 2.5V @ 250µA | 120nC @ 10V | 5900pF @ 20V | — |
|
SQJQ904E-T1_GE3
MOSFET 2 N-CH 40V POWERPAK8X8 |
Vishay | Active | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 8 x 8 Dual | 75W | PowerPAK® 8 x 8 Dual | 2 N-Channel (Dual) | Standard | 40V | 100A (Tc) | 3.4mOhm @ 20A, 10V | 3.5V @ 250µA | 75nC @ 10V | 5900pF @ 20V | — |
|
SQJQ906E-T1_GE3
MOSFET 2 N-CH 40V POWERPAK8X8 |
Vishay | Active | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 8 x 8 Dual | 50W | PowerPAK® 8 x 8 Dual | 2 N-Channel (Dual) | Standard | 40V | 95A (Tc) | 3.3mOhm @ 5A, 10V | 3.5V @ 250µA | 42nC @ 10V | 3600pF @ 20V | — |
|
SQJQ906EL-T1_GE3
MOSFET 2 N-CH 40V POWERPAK8X8 |
Vishay | Active | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 8 x 8 Dual | 187W | PowerPAK® 8 x 8 Dual | 2 N-Channel (Dual) | Standard | 40V | 160A (Tc) | 4.3mOhm @ 5A, 10V | 2.5V @ 250µA | 45nC @ 10V | 3238pF @ 20V | — |
|
SQJQ910EL-T1_GE3
MOSFET 2 N-CH 100V POWERPAK8X8 |
Vishay | Active | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 8 x 8 Dual | 187W | PowerPAK® 8 x 8 Dual | 2 N-Channel (Dual) | Standard | 100V | 70A (Tc) | 8.6mOhm @ 10A, 10V | 2.5V @ 250µA | 58nC @ 10V | 2832pF @ 50V | — |
|
SQJQ960EL-T1_GE3
MOSFET 2 N-CH 60V POWERPAK8X8 |
Vishay | Active | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 8 x 8 Dual | 71W | PowerPAK® 8 x 8 Dual | 2 N-Channel (Dual) | Standard | 60V | 63A (Tc) | 9mOhm @ 10A, 10V | 2.5V @ 250µA | 24nC @ 10V | 1950pF @ 25V | — |
|
SQJQ980EL-T1_GE3
MOSFET 2 N-CH 80V POWERPAK8X8 |
Vishay | Active | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 8 x 8 Dual | 187W | PowerPAK® 8 x 8 Dual | 2 N-Channel (Dual) | Standard | 80V | 36A (Tc) | 13.5mOhm @ 5A, 10V | 2.5V @ 250µA | 36nC @ 10V | 1995pF @ 40V | — |
|
SQS944ENW-T1_GE3
MOSFET N-CHAN 40V |
Vishay | Active | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerPAK® 1212-8W Dual | 27.8W (Tc) | PowerPAK® 1212-8W Dual | 2 N-Channel (Dual) | Standard | 40V | 6A (Tc) | 25mOhm @ 1.25A, 10V | 2.5V @ 250µA | 10nC @ 10V | 615pF @ 25V | — |
|
SQS966ENW-T1_GE3
MOSFET N-CHAN 60V |
Vishay | Active | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerPAK® 1212-8W Dual | 27.8W (Tc) | PowerPAK® 1212-8W Dual | 2 N-Channel (Dual) | Standard | 60V | 6A (Tc) | 36mOhm @ 1.25A, 10V | 2.5V @ 250µA | 8.8nC @ 10V | 572pF @ 25V | — |
|
SQUN702E-T1_GE3
MOSFET N&P-CH COMMON DRAIN |
Vishay | Active | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | Die | 48W (Tc), 60W (Tc) | Die | N and P-Channel, Common Drain | Standard | 40V, 200V | 30A (Tc), 20A (Tc) | 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V | 2.5V @ 250µA, 3.5V @ 250µA | 23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V | 1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V | — |
|
SSD2007ASTF
MOSFET 2N-CH 50V 2A 8-SOIC |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | — | 2W | 8-SOIC | 2 N-Channel (Dual) | Logic Level Gate | 50V | 2A | 300mOhm @ 1.5A, 10V | 4V @ 250µA | 15nC @ 10V | — | — |
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SSD2007ATF
MOSFET 2N-CH 50V 2A 8-SOIC |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | — | 2W | 8-SOIC | 2 N-Channel (Dual) | Logic Level Gate | 50V | 2A | 300mOhm @ 1.5A, 10V | 4V @ 250µA | 15nC @ 10V | — | — |
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SSD2007ATF
N-CHANNEL POWER MOSFET |
Rochester Electronics | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | — | 2W | 8-SOIC | 2 N-Channel (Dual) | Logic Level Gate | 50V | 2A | 300mOhm @ 1.5A, 10V | 4V @ 250µA | 15nC @ 10V | — | — |
|
SSD2009ATF
MOSFET 2N-CH 50V 3A 8-SOIC |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | — | 2W | 8-SOIC | 2 N-Channel (Dual) | Logic Level Gate | 50V | 3A | 130mOhm @ 3A, 10V | 3V @ 250µA | 25nC @ 10V | — | — |
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SSD2025TF
MOSFET 2N-CH 60V 3.3A 8-SOIC |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | — | 2W | 8-SOIC | 2 N-Channel (Dual) | Logic Level Gate | 60V | 3.3A | 100mOhm @ 3.3A, 10V | 1V @ 250µA | 30nC @ 10V | — | — |
|
SSD2025TF
N-CHANNEL POWER MOSFET |
Rochester Electronics | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | — | 2W | 8-SOIC | 2 N-Channel (Dual) | Logic Level Gate | 60V | 3.3A | 100mOhm @ 3.3A, 10V | 1V @ 250µA | 30nC @ 10V | — | — |
|
SSM6L09FUTE85LF
MOSFET N/P-CH 30V 0.4A/0.2A US6 |
Toshiba Electronic Devices and Storage Corporation | Active | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 300mW | US6 | N and P-Channel | Logic Level Gate | 30V | 400mA, 200mA | 700mOhm @ 200MA, 10V | 1.8V @ 100µA | — | 20pF @ 5V | — |
|
SSM6L11TU(TE85L,F)
MOSFET N/P-CH 20V 0.5A UF6 S |
Toshiba Electronic Devices and Storage Corporation | Obsolete | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 500mW | UF6 | N and P-Channel | Logic Level Gate | 20V | 500mA | 145mOhm @ 250MA, 4V | 1.1V @ 100µA | — | 268pF @ 10V | — |
|
SSM6L12TU,LF
MOSFET N/P-CH 30V 500MA UF6 |
Toshiba Electronic Devices and Storage Corporation | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | 500mW | UF6 | N and P-Channel | Standard | 30V | 500mA (Ta) | 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V | 1.1V @ 100µA | — | 245pF @ 10V, 218pF @ 10V | — |
|
SSM6L13TU(T5L,F,T)
MOSFET N/P-CH 20V 800MA UF6 |
Toshiba Electronic Devices and Storage Corporation | Obsolete | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 500mW | UF6 | N and P-Channel | Logic Level Gate, 1.8V Drive | 20V | 800mA (Ta) | 143mOhm @ 600mA, 4V, 234mOhm @ 600mA, 4V | 1V @ 1mA | — | 268pF @ 10V, 250pF @ 10V | — |
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SSM6L14FE(TE85L,F)
X34 PB-F SMALL LOW ON RESISTANCE |
Toshiba Electronic Devices and Storage Corporation | Active | 150°C | Surface Mount | SOT-563, SOT-666 | 150mW (Ta) | ES6 | N and P-Channel | Logic Level Gate, 1.5V Drive | 20V | 800mA (Ta), 720mA (Ta) | 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V | 1V @ 1mA | 2nC @ 4.5V, 1.76nC @ 4.5V | 90pF @ 10V, 110pF @ 10V | — |
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SSM6L16FETE85LF
MOSFET N/P-CH 20V 0.18A/0.1A ES6 |
Toshiba Electronic Devices and Storage Corporation | Not For New Designs | 150°C (TA) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Standard | 20V | 100mA | 3Ohm @ 10mA, 4V | 1.1V @ 0.1mA | — | 9.3pF @ 3V | — |
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SSM6L35FE,LM
MOSFET N/P-CH 20V 0.18A/0.1A ES6 |
Toshiba Electronic Devices and Storage Corporation | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 | N and P-Channel | Logic Level Gate | 20V | 180mA, 100mA | 3Ohm @ 50mA, 4V | 1V @ 1mA | — | 9.5pF @ 3V | — |
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SSM6L35FU(TE85L,F)
MOSFET N/P-CH 20V 0.18A/0.1A US6 |
Toshiba Electronic Devices and Storage Corporation | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 200mW | US6 | N and P-Channel | Logic Level Gate, 1.2V Drive | 20V | 180mA, 100mA | 3Ohm @ 50mA, 4V | 1V @ 1mA | — | 9.5pF @ 3V | — |
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SSM6L36FE,LM
MOSFET N/P-CH 20V 0.5A/0.33A ES6 |
Toshiba Electronic Devices and Storage Corporation | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 | N and P-Channel | Logic Level Gate | 20V | 500mA, 330mA | 630mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | — |
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SSM6L36TU,LF
SMALL SIGNAL MOSFET N-CH + P-CH |
Toshiba Electronic Devices and Storage Corporation | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | 500mW (Ta) | UF6 | N and P-Channel | Logic Level Gate, 1.5V Drive | 20V | 500mA (Ta), 330mA (Ta) | 630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V | 1V @ 1mA | 1.23nC @ 4V, 1.2nC @ 4V | 46pF @ 10V, 43pF @ 10V | — |
|
SSM6L39TU,LF
MOSFET N/P-CH 20V 0.8A UF6 |
Toshiba Electronic Devices and Storage Corporation | Active | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 500mW | UF6 | N and P-Channel | Logic Level Gate, 1.8V Drive | 20V | 800mA | 143mOhm @ 600MA, 4V | 1V @ 1mA | — | 268pF @ 10V | — |
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SSM6L40TU,LF
X34 PB-F UF6 S-MOS (LF) TRANSIST |
Toshiba Electronic Devices and Storage Corporation | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | 500mW (Ta) | UF6 | N and P-Channel | Logic Level Gate, 4V Drive | 30V | 1.6A (Ta), 1.4A (Ta) | 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V | 2.6V @ 1mA, 2V @ 1mA | 5.1nC @ 10V, 2.9nC @ 10V | 180pF @ 15V, 120pF @ 15V | — |
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SSM6L56FE,LM
SMALL-SIGNAL MOSFET 2 IN 1 NCH + |
Toshiba Electronic Devices and Storage Corporation | Active | 150°C | Surface Mount | SOT-563, SOT-666 | 150mW (Ta) | ES6 | N and P-Channel | Logic Level Gate, 1.5V Drive | 20V | 800mA (Ta) | 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 10V | 55pF @ 10V, 100pF @ 10V | — |
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SSM6L61NU,LF
MOSFET N/P-CH 20V 4A UDFN6 |
Toshiba Electronic Devices and Storage Corporation | Active | — | Surface Mount | 6-WDFN Exposed Pad | — | 6-UDFN (2x2) | N and P-Channel | Standard | 20V | 4A | — | — | — | — | — |
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SSM6L820R,LXHF
AUTO AEC-Q SS MOS N-CH + P-CH LO |
Toshiba Electronic Devices and Storage Corporation | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | 1.4W (Ta) | 6-TSOP-F | N and P-Channel | Standard | 30V, 20V | 4A (Ta) | 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V | 1V @ 1mA, 1.2V @ 1mA | 3.2nC @ 4.5V, 6.7nC @4.5V | 310pF @ 15V, 480pF @ 10V | — |
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SSM6N15AFE,LM
MOSFET 2N-CH 30V 0.1A ES6 |
Toshiba Electronic Devices and Storage Corporation | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 N-Channel (Dual) | Logic Level Gate | 30V | 100mA | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | — | 13.5pF @ 3V | — |
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SSM6N15AFU,LF
MOSFET 2N-CH 30V 0.1A 2-2J1C |
Toshiba Electronic Devices and Storage Corporation | Active | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 300mW | US6 | 2 N-Channel (Dual) | Logic Level Gate | 30V | 100mA | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | — | 13.5pF @ 3V | — |
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SSM6N16FE,L3F
SMALL SIGNAL MOSFET N-CH X 2 VDS |
Toshiba Electronic Devices and Storage Corporation | Active | 150°C | Surface Mount | SOT-563, SOT-666 | 150mW (Ta) | ES6 | 2 N-Channel (Dual) | Standard | 20V | 100mA (Ta) | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | — | 9.3pF @ 3V | — |
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SSM6N16FUTE85LF
MOSFET 2N-CH 20V 0.1A US6 |
Toshiba Electronic Devices and Storage Corporation | Active | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 200mW | US6 | 2 N-Channel (Dual) | Standard | 20V | 100mA | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | — | 9.3pF @ 3V | — |
|
SSM6N17FU(TE85L,F)
X34 SMALL LOW RON DUAL NCH MOSFE |
Toshiba Electronic Devices and Storage Corporation | Active | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 200mW (Ta) | US6 | 2 N-Channel (Dual) | Standard | 50V | 100mA (Ta) | 20Ohm @ 10mA, 4V | 1.5V @ 1µA | — | 7pF @ 3V | — |
|
SSM6N24TU,LF
SMALL SIGNAL MOSFET N-CHX2 VDSS3 |
Toshiba Electronic Devices and Storage Corporation | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | 500mW (Ta) | UF6 | 2 N-Channel (Dual) | Standard | 30V | 500mA (Ta) | 145mOhm @ 500mA, 4.5V | 1.1V @ 100µA | — | 245pF @ 10V | — |
|
SSM6N357R,LF
SMALL LOW R-ON MOSFETS DUAL NCH |
Toshiba Electronic Devices and Storage Corporation | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | 1.5W (Ta) | 6-TSOP-F | 2 N-Channel (Dual) | Standard | 60V | 650mA (Ta) | 1.8Ohm @ 150mA, 5V | 2V @ 1mA | 1.5nC @ 5V | 60pF @ 12V | — |
|
SSM6N35AFE,LF
MOSFET 2 N-CHANNEL 20V 250MA ES6 |
Toshiba Electronic Devices and Storage Corporation | Active | 150°C | Surface Mount | SOT-563, SOT-666 | 250mW | ES6 | 2 N-Channel (Dual) | Logic Level Gate, 1.2V Drive | 20V | 250mA (Ta) | 1.1Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | 36pF @ 10V | — |
|
SSM6N35AFU,LF
MOSFET 2 N-CHANNEL 20V 250MA US6 |
Toshiba Electronic Devices and Storage Corporation | Active | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 285mW (Ta) | US6 | 2 N-Channel (Dual) | Standard | 20V | 250mA (Ta) | 1.1Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | 36pF @ 10V | — |
|
SSM6N35FE,LM
MOSFET 2N-CH 20V 0.18A ES6 |
Toshiba Electronic Devices and Storage Corporation | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 180mA | 3Ohm @ 50mA, 4V | 1V @ 1mA | — | 9.5pF @ 3V | — |
|
SSM6N36FE,LM
MOSFET 2N-CH 20V 0.5A ES6 |
Toshiba Electronic Devices and Storage Corporation | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 N-Channel (Dual) | Logic Level Gate | 20V | 500mA | 630mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | — |
|
SSM6N36TU,LF
SMALL SIGNAL MOSFET N-CH X 2 VDS |
Toshiba Electronic Devices and Storage Corporation | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | 500mW (Ta) | UF6 | 2 N-Channel (Dual) | Logic Level Gate, 1.5V Drive | 20V | 500mA (Ta) | 630mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | — |
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SSM6N37CTD(TPL3)
MOSFET 2N-CH 20V 0.25A CST6D |
Toshiba Electronic Devices and Storage Corporation | Obsolete | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 140mW | CST6D | 2 N-Channel (Dual) | Logic Level Gate | 20V | 250mA | 2.2Ohm @ 100mA, 4.5V | 1V @ 1mA | — | 12pF @ 10V | — |
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SSM6N37FE,LM
MOSFET 2N-CH 20V 0.25A 2-2N1D |
Toshiba Electronic Devices and Storage Corporation | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 250mA | 2.2Ohm @ 100mA, 4.5V | 1V @ 1mA | — | 12pF @ 10V | — |