Transistörler - FET, MOSFET - Tekil
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Komponentler
10,000 sonuç · Sayfa 178/200| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FCPF600N65S3R0L-F154
POWER SUPERFET MOSFET N-CHANNEL |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | 24W (Tc) | N-Channel | — | 650 V | 6A (Tc) | 600mOhm @ 3A, 10V | 4.5V @ 120µA | 11 nC @ 10 V | 465 pF @ 400 V | 10V | ±30V | — |
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FCPF650N80Z
MOSFET N-CH 800V 8A TO220F |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | 30.5W (Tc) | N-Channel | — | 800 V | 8A (Tc) | 650mOhm @ 4A, 10V | 4.5V @ 800µA | 35 nC @ 10 V | 1565 pF @ 100 V | 10V | ±20V | — |
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FCPF7N60
MOSFET N-CH 600V 7A TO220F |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | 31W (Tc) | N-Channel | — | 600 V | 7A (Tc) | 600mOhm @ 3.5A, 10V | 5V @ 250µA | 30 nC @ 10 V | 920 pF @ 25 V | 10V | ±30V | — |
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FCPF7N60NT
MOSFET N-CH 600V 6.8A TO220F |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | 30.5W (Tc) | N-Channel | — | 600 V | 6.8A (Tc) | 520mOhm @ 3.4A, 10V | 4V @ 250µA | 35.6 nC @ 10 V | 960 pF @ 100 V | 10V | ±30V | — |
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FCPF7N60T
MOSFET N-CH 600V 7A TO220F |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | 31W (Tc) | N-Channel | — | 600 V | 7A (Tc) | 600mOhm @ 3.5A, 10V | 5V @ 250µA | 30 nC @ 10 V | 920 pF @ 25 V | 10V | ±30V | — |
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FCPF7N60YDTU
MOSFET N-CH 600V 7A TO220F-3 |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Formed Leads | MOSFET (Metal Oxide) | TO-220F-3 (Y-Forming) | 31W (Tc) | N-Channel | — | 600 V | 7A (Tc) | 600mOhm @ 3.5A, 10V | 5V @ 250µA | 30 nC @ 10 V | 920 pF @ 25 V | 10V | ±30V | — |
|
FCPF7N60YDTU
MOSFET N-CH 600V 7A TO220F-3 |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Formed Leads | MOSFET (Metal Oxide) | TO-220F-3 (Y-Forming) | 31W (Tc) | N-Channel | — | 600 V | 7A (Tc) | 600mOhm @ 3.5A, 10V | 5V @ 250µA | 30 nC @ 10 V | 920 pF @ 25 V | 10V | ±30V | — |
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FCPF850N80Z
POWER FIELD-EFFECT TRANSISTOR, N |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F | 28.4W (Tc) | N-Channel | — | 800 V | 6A (Tc) | 850mOhm @ 3A, 10V | 4.5V @ 600µA | 29 nC @ 10 V | 1315 pF @ 100 V | 10V | ±20V | — |
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FCPF9N60NT
MOSFET N-CH 600V 9A TO220F |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | 29.8W (Tc) | N-Channel | — | 600 V | 9A (Tc) | 385mOhm @ 4.5A, 10V | 4V @ 250µA | 29 nC @ 10 V | 1240 pF @ 100 V | 10V | ±30V | — |
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FCPF9N60NTYDTU
MOSFET N-CH 600V 9A TO220F-3 |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Formed Leads | MOSFET (Metal Oxide) | TO-220F-3 (Y-Forming) | 29.8W (Tc) | N-Channel | — | 600 V | 9A (Tc) | 385mOhm @ 4.5A, 10V | 4V @ 250µA | 29 nC @ 10 V | 1240 pF @ 100 V | 10V | ±30V | — |
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FCU2250N80Z
MOSFET N-CH 800V 2.6A I-PAK |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | I-PAK | 39W (Tc) | N-Channel | — | 800 V | 2.6A (Tc) | 2.25Ohm @ 1.3A, 10V | 4.5V @ 260µA | 14 nC @ 10 V | 585 pF @ 100 V | 10V | ±20V | — |
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FCU2250N80Z
MOSFET N-CH 800V 2.6A IPAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | I-PAK | 39W (Tc) | N-Channel | — | 800 V | 2.6A (Tc) | 2.25Ohm @ 1.3A, 10V | 4.5V @ 260µA | 14 nC @ 10 V | 585 pF @ 100 V | 10V | ±20V | — |
|
FCU3400N80Z
MOSFET N-CH 800V 2A I-PAK |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | I-PAK | 32W (Tc) | N-Channel | — | 800 V | 2A (Tc) | 3.4Ohm @ 1A, 10V | 4.5V @ 200µA | 9.6 nC @ 10 V | 400 pF @ 100 V | 10V | ±20V | — |
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FCU3400N80Z
MOSFET N-CH 800V 2A IPAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | I-PAK | 32W (Tc) | N-Channel | — | 800 V | 2A (Tc) | 3.4Ohm @ 1A, 10V | 4.5V @ 200µA | 9.6 nC @ 10 V | 400 pF @ 100 V | 10V | ±20V | — |
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FCU360N65S3R0
MOSFET N-CH 600V IPAK |
onsemi | Active | — | Through Hole | TO-251-3 Stub Leads, IPak | — | I-PAK | — | — | — | — | 10A (Tc) | — | — | — | — | — | — | — |
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FCU4300N80Z
MOSFET N-CH 800V 1.6A I-PAK |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | I-PAK | 27.8W (Tc) | N-Channel | — | 800 V | 1.6A (Tc) | 4.3Ohm @ 800mA, 10V | 4.5V @ 160µA | 8.8 nC @ 10 V | 355 pF @ 100 V | 10V | ±20V | — |
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FCU4300N80Z
MOSFET N-CH 800V 1.6A IPAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | I-PAK | 27.8W (Tc) | N-Channel | — | 800 V | 1.6A (Tc) | 4.3Ohm @ 800mA, 10V | 4.5V @ 160µA | 8.8 nC @ 10 V | 355 pF @ 100 V | 10V | ±20V | — |
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FCU5N60TU
MOSFET N-CH 600V 4.6A I-PAK |
onsemi | Not For New Designs | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | I-PAK | 54W (Tc) | N-Channel | — | 600 V | 4.6A (Tc) | 950mOhm @ 2.3A, 10V | 5V @ 250µA | 16 nC @ 10 V | 600 pF @ 25 V | 10V | ±30V | — |
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FCU5N60TU
4.6A, 600V, 0.95OHM, N-CHANNEL, |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | I-PAK | 54W (Tc) | N-Channel | — | 600 V | 4.6A (Tc) | 950mOhm @ 2.3A, 10V | 5V @ 250µA | 16 nC @ 10 V | 600 pF @ 25 V | 10V | ±30V | — |
|
FCU600N65S3R0
MOSFET N-CH 650V 6A IPAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | MOSFET (Metal Oxide) | I-PAK | 54W (Tc) | N-Channel | — | 650 V | 6A (Tc) | 600mOhm @ 3A, 10V | 4.5V @ 600µA | 11 nC @ 10 V | 465 pF @ 400 V | 10V | ±30V | — |
|
FCU7N60TU
MOSFET N-CH 600V 7A IPAK |
Rochester Electronics | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | I-PAK | 83W (Tc) | N-Channel | — | 600 V | 7A (Tc) | 600mOhm @ 3.5A, 10V | 5V @ 250µA | 30 nC @ 10 V | 920 pF @ 25 V | 10V | ±30V | — |
|
FCU7N60TU
MOSFET N-CH 600V 7A IPAK |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | I-PAK | 83W (Tc) | N-Channel | — | 600 V | 7A (Tc) | 600mOhm @ 3.5A, 10V | 5V @ 250µA | 30 nC @ 10 V | 920 pF @ 25 V | 10V | ±30V | — |
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FCU850N80Z
MOSFET N-CH 800V 6A IPAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | I-PAK | 75W (Tc) | N-Channel | — | 800 V | 6A (Tc) | 850mOhm @ 3A, 10V | 4.5V @ 600µA | 29 nC @ 10 V | 1315 pF @ 100 V | 10V | ±20V | — |
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FCU900N60Z
MOSFET N-CH 600V 4.5A IPAK |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | MOSFET (Metal Oxide) | I-PAK | 52W (Tc) | N-Channel | — | 600 V | 4.5A (Tc) | 900mOhm @ 2.3A, 10V | 3.5V @ 250µA | 17 nC @ 10 V | 710 pF @ 25 V | 10V | ±20V | — |
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FD70N20PWD
MOSFET N-CH 200V 70A TO3P |
onsemi | Obsolete | — | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3P | — | N-Channel | — | 200 V | 70A (Ta) | — | — | — | — | — | — | — |
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FDA032N08
MOSFET N-CH 75V 120A TO3PN |
Rochester Electronics | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 375W (Tc) | N-Channel | — | 75 V | 120A (Tc) | 3.2mOhm @ 75A, 10V | 4.5V @ 250µA | 220 nC @ 10 V | 15160 pF @ 25 V | 10V | ±20V | — |
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FDA15N65
MOSFET N-CH 650V 16A TO3PN |
Rochester Electronics | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 260W (Tc) | N-Channel | — | 650 V | 16A (Tc) | 440mOhm @ 8A, 10V | 5V @ 250µA | 63 nC @ 10 V | 3095 pF @ 25 V | 10V | ±30V | — |
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FDA15N65
MOSFET N-CH 650V 16A TO3PN |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 260W (Tc) | N-Channel | — | 650 V | 16A (Tc) | 440mOhm @ 8A, 10V | 5V @ 250µA | 63 nC @ 10 V | 3095 pF @ 25 V | 10V | ±30V | — |
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FDA16N50
MOSFET N-CH 500V 16.5A TO3PN |
Rochester Electronics | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 205W (Tc) | N-Channel | — | 500 V | 16.5A (Tc) | 380mOhm @ 8.3A, 10V | 5V @ 250µA | 45 nC @ 10 V | 1945 pF @ 25 V | 10V | ±30V | — |
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FDA16N50
MOSFET N-CH 500V 16.5A TO3PN |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 205W (Tc) | N-Channel | — | 500 V | 16.5A (Tc) | 380mOhm @ 8.3A, 10V | 5V @ 250µA | 45 nC @ 10 V | 1945 pF @ 25 V | 10V | ±30V | — |
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FDA16N50-F109
POWER FIELD-EFFECT TRANSISTOR, 1 |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 205W (Tc) | N-Channel | — | 500 V | 16.5A (Tc) | 380mOhm @ 8.3A, 10V | 5V @ 250µA | 45 nC @ 10 V | 1945 pF @ 25 V | 10V | ±30V | — |
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FDA16N50-F109
MOSFET N-CH 500V 16.5A TO3PN |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 205W (Tc) | N-Channel | — | 500 V | 16.5A (Tc) | 380mOhm @ 8.3A, 10V | 5V @ 250µA | 45 nC @ 10 V | 1945 pF @ 25 V | 10V | ±30V | — |
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FDA16N50LDTU
MOSFET N-CH 500V 16.5A TO3PN |
onsemi | Last Time Buy | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 (Formed Leads) | MOSFET (Metal Oxide) | TO-3PN (L-Forming) | 205W (Tc) | N-Channel | — | 500 V | 16.5A (Tc) | 380mOhm @ 8.3A, 10V | 5V @ 250µA | 45 nC @ 10 V | 1945 pF @ 25 V | 10V | ±30V | — |
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FDA18N50
MOSFET N-CH 500V 19A TO3PN |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 239W (Tc) | N-Channel | — | 500 V | 19A (Tc) | 265mOhm @ 9.5A, 10V | 5V @ 250µA | 60 nC @ 10 V | 2860 pF @ 25 V | 10V | ±30V | — |
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FDA20N50
MOSFET N-CH 500V 22A TO3PN |
Rochester Electronics | Obsolete | — | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | — | N-Channel | — | 500 V | 22A (Tc) | 230mOhm @ 11A, 10V | 5V @ 250µA | 59.5 nC @ 10 V | 3120 pF @ 25 V | — | — | — |
|
FDA20N50-F109
MOSFET N-CH 500V 22A TO3PN |
onsemi | Last Time Buy | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 280W (Tc) | N-Channel | — | 500 V | 22A (Tc) | 230mOhm @ 11A, 10V | 5V @ 250µA | 59.5 nC @ 10 V | 3120 pF @ 25 V | 10V | ±30V | — |
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FDA20N50F
MOSFET N-CH 500V 22A TO3PN |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 388W (Tc) | N-Channel | — | 500 V | 22A (Tc) | 260mOhm @ 11A, 10V | 5V @ 250µA | 65 nC @ 10 V | 3390 pF @ 25 V | 10V | ±30V | — |
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FDA24N40F
MOSFET N-CH 400V 23A TO3PN |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 235W (Tc) | N-Channel | — | 400 V | 23A (Tc) | 190mOhm @ 11.5A, 10V | 5V @ 250µA | 60 nC @ 10 V | 3030 pF @ 25 V | 10V | ±30V | — |
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FDA24N50
MOSFET N-CH 500V 24A TO3PN |
onsemi | Last Time Buy | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 270W (Tc) | N-Channel | — | 500 V | 24A (Tc) | 190mOhm @ 12A, 10V | 5V @ 250µA | 85 nC @ 10 V | 4150 pF @ 25 V | 10V | ±30V | — |
|
FDA24N50F
MOSFET N-CH 500V 24A TO3PN |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 270W (Tc) | N-Channel | — | 500 V | 24A (Tc) | 200mOhm @ 12A, 10V | 5V @ 250µA | 85 nC @ 10 V | 4310 pF @ 25 V | 10V | ±30V | — |
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FDA2712
MOSFET N-CH 250V 64A TO3PN |
Rochester Electronics | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 357W (Tc) | N-Channel | — | 250 V | 64A (Tc) | 34mOhm @ 40A, 10V | 5V @ 250µA | 129 nC @ 10 V | 10175 pF @ 25 V | 10V | ±30V | — |
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FDA2712
MOSFET N-CH 250V 64A TO3PN |
onsemi | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 357W (Tc) | N-Channel | — | 250 V | 64A (Tc) | 34mOhm @ 40A, 10V | 5V @ 250µA | 129 nC @ 10 V | 10175 pF @ 25 V | 10V | ±30V | — |
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FDA28N50
MOSFET N-CH 500V 28A TO3PN |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 310W (Tc) | N-Channel | — | 500 V | 28A (Tc) | 155mOhm @ 14A, 10V | 5V @ 250µA | 105 nC @ 10 V | 5140 pF @ 25 V | 10V | ±30V | — |
|
FDA28N50F
MOSFET N-CH 500V 28A TO3PN |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 310W (Tc) | N-Channel | — | 500 V | 28A (Tc) | 175mOhm @ 14A, 10V | 5V @ 250µA | 105 nC @ 10 V | 5387 pF @ 25 V | 10V | ±30V | — |
|
FDA33N25
MOSFET N-CH 250V 33A TO3PN |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 245W (Tc) | N-Channel | — | 250 V | 33A (Tc) | 94mOhm @ 16.5A, 10V | 5V @ 250µA | 46.8 nC @ 10 V | 2200 pF @ 25 V | 10V | ±30V | — |
|
FDA38N30
MOSFET N-CH 300V 38A TO3PN |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 312W (Tc) | N-Channel | — | 300 V | 38A (Tc) | 85mOhm @ 19A, 10V | 5V @ 250µA | 60 nC @ 10 V | 2600 pF @ 25 V | 10V | ±30V | — |
|
FDA38N30
POWER FIELD-EFFECT TRANSISTOR, 3 |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 312W (Tc) | N-Channel | — | 300 V | 38A (Tc) | 85mOhm @ 19A, 10V | 5V @ 250µA | 60 nC @ 10 V | 2600 pF @ 25 V | 10V | ±30V | — |
|
FDA50N50
MOSFET N-CH 500V 48A TO3PN |
onsemi | Last Time Buy | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 625W (Tc) | N-Channel | — | 500 V | 48A (Tc) | 105mOhm @ 24A, 10V | 5V @ 250µA | 137 nC @ 10 V | 6460 pF @ 25 V | 10V | ±20V | — |
|
FDA59N25
MOSFET N-CH 250V 59A TO3PN |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 392W (Tc) | N-Channel | — | 250 V | 59A (Tc) | 49mOhm @ 29.5A, 10V | 5V @ 250µA | 82 nC @ 10 V | 4020 pF @ 25 V | 10V | ±30V | — |
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FDA59N30
MOSFET N-CH 300V 59A TO3PN |
onsemi | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | 500W (Tc) | N-Channel | — | 300 V | 59A (Tc) | 56mOhm @ 29.5A, 10V | 5V @ 250µA | 100 nC @ 10 V | 4670 pF @ 25 V | 10V | ±30V | — |