Transistörler - FET, MOSFET - Diziler
- Komponent
- 5,229
- Marka
- 44
Komponentler
5,229 sonuç · Sayfa 47/105| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FF08MR12W1MA1B11ABPSA1
EASY PACK |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | 20mW (Tc) | AG-EASY1BM-2 | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 150A (Tj) | 9.8mOhm @ 150A, 15V | 5.55V @ 90mA | 15V | 600V | — |
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FF11MR12W1M1B11BOMA1
MOSFET 2N-CH 1200V 100A MODULE |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | — | Module | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 100A | 11mOhm @ 100A, 15V | 5.55V @ 40mA | 250nC @ 15V | 7950pF @ 800V | — |
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FF11MR12W1M1B70BPSA1
LOW POWER EASY AG-EASY1B-2 |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | 20mW (Tc) | AG-EASY1B | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 100A (Tj) | 11.3mOhm @ 100A, 15V | 5.55V @ 40mA | 248nC @ 15V | 7.36nF @ 800V | — |
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FF11MR12W1M1PB11BPSA1
MOSFET MODULE 1200V DUAL |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | 20mW | AG-EASY1B-2 | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 100A (Tj) | 11.3mOhm @ 100A, 15V | 5.55V @ 40mA | 248nC @ 15V | 7360pF @ 800V | — |
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FF23MR12W1M1B11BOMA1
MOSFET 2 N-CH 1200V 50A MODULE |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | 20mW | Module | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 50A | 23mOhm @ 50A, 15V | 5.55V @ 20mA | 125nC @ 15V | 3950pF @ 800V | — |
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FF2MR12KM1HOSA1
MEDIUM POWER 62MM |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | — | AG-62MM | 2 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | 500A (Tc) | 2.13mOhm @ 500A, 15V | 5.15V @ 224mA | 1340nC @ 15V | 39700pF @ 800V | — |
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FF2MR12KM1PHOSA1
MEDIUM POWER 62MM |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | — | AG-62MM | 2 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | 500A (Tc) | 2.13mOhm @ 500A, 15V | 5.15V @ 224mA | 1340nC @ 15V | 39700pF @ 800V | — |
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FF3MR12KM1HOSA1
MEDIUM POWER 62MM |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | — | AG-62MM | 2 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | 375A (Tc) | 2.83mOhm @ 375A, 15V | 5.15V @ 168mA | 1000nC @ 15V | 29800pF @ 25V | — |
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FF3MR12KM1PHOSA1
MEDIUM POWER 62MM |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | — | AG-62MM | 2 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | 375A (Tc) | 2.83mOhm @ 375A, 15V | 5.15V @ 168mA | 1000nC @ 15V | 29800pF @ 25V | — |
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FF45MR12W1M1B11BOMA1
MOSFET MODULE 1200V 50A |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | 20mW (Tc) | AG-EASY1BM-2 | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 25A (Tj) | 45mOhm @ 25A, 15V (Typ) | 5.55V @ 10mA | 62nC @ 15V | 1840pF @ 800V | — |
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FF45MR12W1M1PB11BPSA1
LOW POWER EASY AG-EASY1BM-2 |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | 20mW (Tc) | AG-EASY1BM | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 25A (Tj) | 45mOhm @ 25A, 15V | 5.55V @ 10mA | 62nC @ 15V | 1.84nF @ 800V | — |
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FF6MR12KM1BOSA1
MEDIUM POWER 62MM |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | — | AG-62MM | 2 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | 250A (Tc) | 5.81mOhm @ 250A, 15V | 5.15V @ 80mA | 496nC @ 15V | 14700pF @ 800V | — |
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FF6MR12KM1PHOSA1
MEDIUM POWER 62MM |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | — | AG-62MM | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 250A (Tc) | 5.81mOhm @ 250A, 15V | 5.15V @ 80mA | 496nC @ 15V | 14700pF @ 800V | — |
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FF6MR12W2M1B11BOMA1
MOSFET MODULE 1200V 200A |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | 20mW (Tc) | AG-EASY2BM-2 | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 200A (Tj) | 5.63mOhm @ 200A, 15V | 5.55V @ 10mA | 496nC @ 15V | 14700pF @ 800V | — |
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FF6MR12W2M1B70BPSA1
LOW POWER EASY AG-EASY2B-2 |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | 20mW (Tc) | AG-EASY2B | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 200A (Tj) | 5.63mOhm @ 200A, 15V | 5.55V @ 80mA | 496nC @ 15V | 14.7nF @ 800V | — |
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FF8MR12W2M1B11BOMA1
MOSFET 2N-CH 1200V AG-EASY2BM-2 |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | 20mW (Tc) | AG-EASY2BM-2 | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 150A (Tj) | 7.5mOhm @ 150A, 15V (Typ) | 5.55V @ 60mA | 372nC @ 15V | 11000pF @ 800V | — |
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FG6943010R
MOSFET N/P-CH 30V 0.1A SSMINI6 |
Panasonic | Obsolete | -40°C ~ 85°C (TJ) | Surface Mount | SOT-563, SOT-666 | — | SSMini6-F3-B | N and P-Channel | Standard | 30V | 100mA | — | — | — | — | — |
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FMK75-01F
MOSFET 2N-CH 100V 75A I4-PAC-5 |
Littelfuse | Active | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | — | ISOPLUS i4-PAC™ | 2 N-Channel (Dual) | Standard | 100V | 75A | 25mOhm @ 50A, 10V | 4V @ 4mA | 180nC @ 10V | — | — |
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FMM110-015X2F
MOSFET 2N-CH 150V 53A I4-PAC |
Littelfuse | Active | -55°C ~ 175°C (TJ) | Through Hole | i4-Pac™-5 | 180W | ISOPLUS i4-PAC™ | 2 N-Channel (Dual) | Standard | 150V | 53A | 20mOhm @ 55A, 10V | 4.5V @ 250µA | 150nC @ 10V | 8600pF @ 25V | — |
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FMM150-0075P
MOSFET 2N-CH 75V 150A I4-PAC-5 |
Littelfuse | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | i4-Pac™-5 | — | ISOPLUS i4-PAC™ | 2 N-Channel (Dual) | Standard | 75V | 150A | 4.2mOhm @ 120A, 10V | 4V @ 1mA | 225nC @ 10V | — | — |
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FMM150-0075X2F
MOSFET 2N-CH 75V 120A I4-PAC-5 |
Littelfuse | Active | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUSi5-Pak™ | 170W | ISOPLUS i4-PAC™ | 2 N-Channel (Dual) Asymmetrical | Standard | 75V | 120A | 5.8mOhm @ 100A, 10V | 4V @ 250µA | 178nC @ 10V | 10500pF @ 25V | — |
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FMM22-05PF
MOSFET 2N-CH 500V 13A I4-PAC |
Littelfuse | Active | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | 132W | ISOPLUS i4-PAC™ | 2 N-Channel (Dual) | Standard | 500V | 13A | 270mOhm @ 11A, 10V | 5V @ 1mA | 50nC @ 10V | 2630pF @ 25V | — |
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FMM22-06PF
MOSFET 2N-CH 600V 12A I4-PAC |
Littelfuse | Active | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | 130W | ISOPLUS i4-PAC™ | 2 N-Channel (Dual) | Standard | 600V | 12A | 350mOhm @ 11A, 10V | 5V @ 1mA | 58nC @ 10V | 3600pF @ 25V | — |
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FMM300-0055P
MOSFET 2N-CH 55V 300A I4-PAC-5 |
Littelfuse | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | i4-Pac™-5 | — | ISOPLUS i4-PAC™ | 2 N-Channel (Dual) | Standard | 55V | 300A | 3.6mOhm @ 150A, 10V | 4V @ 2mA | 172nC @ 10V | — | — |
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FMM50-025TF
MOSFET 2N-CH 250V 30A I4-PAC |
Littelfuse | Active | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | 125W | ISOPLUS i4-PAC™ | 2 N-Channel (Dual) | Standard | 250V | 30A | 50mOhm @ 25A, 10V | 4.5V @ 250µA | 78nC @ 10V | 4000pF @ 25V | — |
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FMM60-02TF
MOSFET 2N-CH 200V 33A I4-PAC |
Littelfuse | Active | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | 125W | ISOPLUS i4-PAC™ | 2 N-Channel (Dual) | Standard | 200V | 33A | 40mOhm @ 30A, 10V | 4.5V @ 250µA | 90nC @ 10V | 3700pF @ 25V | — |
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FMM65-015P
MOSFET 2N-CH 150V 65A I4-PAC-5 |
Littelfuse | Active | -55°C ~ 175°C (TJ) | Through Hole | i4-Pac™-5 | — | ISOPLUS i4-PAC™ | 2 N-Channel (Dual) | Standard | 150V | 65A | 22mOhm @ 50A, 10V | 4V @ 1mA | 230nC @ 10V | — | — |
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FMM75-01F
MOSFET 2N-CH 100V 75A I4-PAC-5 |
Littelfuse | Active | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | — | ISOPLUS i4-PAC™ | 2 N-Channel (Dual) | Standard | 100V | 75A | 25mOhm @ 50A, 10V | 4V @ 4mA | 180nC @ 10V | — | — |
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FMP26-02P
MOSFET N/P-CH 200V 26A/17A I4PAC |
Littelfuse | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | 125W | ISOPLUS i4-PAC™ | N and P-Channel | Standard | 200V | 26A, 17A | 60mOhm @ 25A, 10V | 5V @ 250µA | 70nC @ 10V | 2720pF @ 25V | — |
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FMP36-015P
MOSFET N/P-CH 150V 36A/22A I4PAC |
Littelfuse | Active | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | 125W | ISOPLUS i4-PAC™ | N and P-Channel | Standard | 150V | 36A, 22A | 40mOhm @ 31A, 10V | 5.5V @ 250µA | 70nC @ 10V | 2250pF @ 25V | — |
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FMP76-010T
MOSFET N/P-CH 100V 62A/54A I4PAC |
Littelfuse | Active | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | 89W, 132W | ISOPLUS i4-PAC™ | N and P-Channel | Standard | 100V | 62A, 54A | 11mOhm @ 25A, 10V | 4.5V @ 250µA | 104nC @ 10V | 5080pF @ 25V | — |
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FMP76-01T
MOSFET N/P-CH |
Littelfuse | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUSi5-Pak™ | 89W, 132W | ISOPLUS i4-PAC™ | N and P-Channel, Common Drain | Standard | 100V | 54A (Tc), 62A (Tc) | 24mOhm @ 38A, 10V, 11mOhm @ 25A, 10V | 4V @ 250µA, 4.5V @ 250µA | 197nC @ 10V, 104nC @ 10V | 1370pF @ 25V, 5080pF @ 25V | — |
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FPF1C2P5BF07A
MOSFET 5N-CH 650V 36A F1 MODULE |
onsemi | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | F1 Module | 250W | F1 | 5 N-Channel (Solar Inverter) | Standard | 650V | 36A | 90mOhm @ 27A, 10V | 3.8V @ 250µA | — | — | — |
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FPF1C2P5BF07A
INSULATED GATE BIPOLAR TRANSISTO |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Chassis Mount | F1 Module | 250W | F1 | 5 N-Channel (Solar Inverter) | Standard | 650V | 36A | 90mOhm @ 27A, 10V | 3.8V @ 250µA | — | — | — |
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FQB12N50TM
TRANS MOSFET N-CH 500V 12.1A 3PI |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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FQP3N50CTF
21A, 60V, N-CHANNEL, MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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FQPF6N50C
3.6A, 500V, N-CHANNEL, MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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FQPF9N25CRDTU
8.8A, 250V, N-CHANNEL, MOSFET |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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FQS4900TF
POWER FIELD-EFFECT TRANSISTOR, 1 |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Surface Mount | — | 2W | 8-SOIC | N and P-Channel | Standard | 60V, 300V | 1.3A, 300mA | 550mOhm @ 650mA, 10V | 1.95V @ 20mA | 2.1nC @ 5V | — | — |
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FQS4900TF
MOSFET N/P-CH 60V/300V 8SOP |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | — | 2W | 8-SOIC | N and P-Channel | Standard | 60V, 300V | 1.3A, 300mA | 550mOhm @ 650mA, 10V | 1.95V @ 20mA | 2.1nC @ 5V | — | — |
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FQS4901TF
MOSFET 2N-CH 400V 450MA 8SOIC |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | — | 2W | 8-SOIC | 2 N-Channel (Dual) | Standard | 400V | 450mA | 4.2Ohm @ 225mA, 10V | 4V @ 250µA | 7.5nC @ 10V | 210pF @ 25V | — |
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FQS4903TF
MOSFET 2N-CH 500V 0.37A 8SOP |
onsemi | Active | -55°C ~ 150°C (TJ) | Surface Mount | — | 2W | 8-SOIC | 2 N-Channel (Dual) | Standard | 500V | 370mA | 6.2Ohm @ 185mA, 10V | 4V @ 250µA | 8.2nC @ 10V | 200pF @ 25V | — |
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FQT1N60CTF
MOSFET N-CH 600V 0.2A SOT-223-4 |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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FS03MR12A6MA1B
HYBRID PACK DRIVE SIC AG-HYBRIDD |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | 20mW | AG-HYBRIDD-2 | 6 N-Channel | Silicon Carbide (SiC) | 1200V (1.2kV) | 400A (Tj) | 3.7mOhm @ 400A, 15V | 5.55V @ 240mA | 1320nC @ 15V | 42.5nF @ 600V | — |
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FS03MR12A6MA1BBPSA1
HYBRID PACK DRIVE SIC AG-HYBRIDD |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | 20mW | AG-HYBRIDD-2 | — | Silicon Carbide (SiC) | 1200V (1.2kV) | 400A (Tj) | 3.7mOhm @ 400A, 15V | 5.55V @ 240mA | 1320nC @ 15V | 42.5nF @ 600V | — |
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FS03MR12A6MA1LB
POWER MODULE |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | 20mW | AG-HYBRIDD-2 | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 400A | 3.7mOhm @ 400A, 15V | 5.55V @ 240mA | 1320nC @ 15V | 42.6nF @ 600V | — |
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FS03MR12A6MA1LBBPSA1
HYBRID PACK DRIVE SIC AG-HYBRIDD |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | 20mW | AG-HYBRIDD-2 | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 400A | 3.7mOhm @ 400A, 15V | 5.55V @ 240mA | 1320nC @ 15V | 42.5nF @ 600V | — |
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FS05MR12A6MA1BBPSA1
HYBRID PACK DRIVE SIC AG-HYBRIDD |
Infineon Technologies | Active | — | Chassis Mount | Module | — | AG-HYBRIDD-2 | — | Silicon Carbide (SiC) | 1200V (1.2kV) | 200A | — | — | — | — | — |
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FS10ASJ-2-T13#B00
HIGH SPEED SWITCHING N-CHANNEL |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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FS10ASJ-3-T13#C01
HIGH SPEED SWITCHING N-CHANNEL |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — |