Transistörler - FET, MOSFET - Diziler
- Komponent
- 5,229
- Marka
- 44
Komponentler
5,229 sonuç · Sayfa 18/105| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSC750N10NDGATMA1
MOSFET 2N-CH 100V 3.2A 8TDSON |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 26W | PG-TDSON-8-4 | 2 N-Channel (Dual) | Standard | 100V | 3.2A | 75mOhm @ 13A, 10V | 4V @ 12µA | 11nC @ 10V | 720pF @ 50V | — |
|
BSD223P
MOSFET 2P-CH 20V 0.39A SOT363 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | 250mW | PG-SOT363-6 | 2 P-Channel (Dual) | Logic Level Gate | 20V | 390mA | 1.2Ohm @ 390mA, 4.5V | 1.2V @ 1.5µA | 0.62nC @ 4.5V | 56pF @ 15V | — |
|
BSD223P L6327
MOSFET 2P-CH 20V 0.39A SOT363 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | 250mW | PG-SOT363-6 | 2 P-Channel (Dual) | Logic Level Gate | 20V | 390mA | 1.2Ohm @ 390mA, 4.5V | 1.2V @ 1.5µA | 0.62nC @ 4.5V | 56pF @ 15V | — |
|
BSD223PH6327XTSA1
MOSFET 2P-CH 20V 0.39A SOT363 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | 250mW | PG-SOT363-6-1 | 2 P-Channel (Dual) | Logic Level Gate | 20V | 390mA | 1.2Ohm @ 390mA, 4.5V | 1.2V @ 1.5µA | 0.62nC @ 4.5V | 56pF @ 15V | — |
|
BSD235C L6327
MOSFET N/P-CH 20V SOT-363 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | 500mW | PG-SOT363-6 | N and P-Channel | Logic Level Gate | 20V | 950mA, 530mA | 350mOhm @ 950mA, 4.5V | 1.2V @ 1.6µA | 0.34nC @ 4.5V | 47pF @ 10V | — |
|
BSD235CH6327XTSA1
MOSFET N/P-CH 20V SOT363 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | 500mW | PG-SOT363-6-1 | N and P-Channel | Logic Level Gate | 20V | 950mA, 530mA | 350mOhm @ 950mA, 4.5V | 1.2V @ 1.6µA | 0.34nC @ 4.5V | 47pF @ 10V | — |
|
BSD235N L6327
MOSFET 2N-CH 20V 0.95A SOT363 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | 500mW | PG-SOT363-6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 950mA | 350mOhm @ 950mA, 4.5V | 1.2V @ 1.6µA | 0.32nC @ 4.5V | 63pF @ 10V | — |
|
BSD235NH6327XTSA1
MOSFET 2N-CH 20V 0.95A SOT363 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | 500mW | PG-SOT363-6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 950mA | 350mOhm @ 950mA, 4.5V | 1.2V @ 1.6µA | 0.32nC @ 4.5V | 63pF @ 10V | — |
|
BSD340NH6327XTSA1
SMALL SIGNAL+P-CH |
Infineon Technologies | Obsolete | — | Surface Mount | 6-VSSOP, SC-88, SOT-363 | — | PG-SOT363-6 | — | — | — | — | — | — | — | — | — |
|
BSD840N L6327
MOSFET 2N-CH 20V 0.88A SOT363 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | 500mW | PG-SOT363-6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 880mA | 400mOhm @ 880mA, 2.5V | 750mV @ 1.6µA | 0.26nC @ 2.5V | 78pF @ 10V | — |
|
BSD840NH6327XTSA1
MOSFET 2N-CH 20V 0.88A SOT363 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | 500mW | PG-SOT363-6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 880mA | 400mOhm @ 880mA, 2.5V | 750mV @ 1.6µA | 0.26nC @ 2.5V | 78pF @ 10V | — |
|
BSG0810NDIATMA1
MOSFET 2N-CH 25V 19A/39A 8TISON |
Infineon Technologies | Active | -55°C ~ 155°C (TJ) | Surface Mount | 8-PowerTDFN | 2.5W | PG-TISON-8 | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate, 4.5V Drive | 25V | 19A, 39A | 3mOhm @ 20A, 10V | 2V @ 250µA | 8.4nC @ 4.5V | 1040pF @ 12V | — |
|
BSG0811NDATMA1
MOSFET 2N-CH 25V 19A/41A 8TISON |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 2.5W | PG-TISON-8 | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate, 4.5V Drive | 25V | 19A, 41A | 3mOhm @ 20A, 10V | 2V @ 250µA | 8.4nC @ 4.5V | 1100pF @ 12V | — |
|
BSG0813NDIATMA1
MOSFET 2N-CH 25V 19A/33A TISON8 |
Infineon Technologies | Active | -55°C ~ 155°C (TJ) | Surface Mount | 8-PowerTDFN | 2.5W | PG-TISON-8 | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate, 4.5V Drive | 25V | 19A, 33A | 3mOhm @ 20A, 10V | 2V @ 250µA | 8.4nC @ 4.5V | 1100pF @ 12V | — |
|
BSL205NH6327XTSA1
MOSFET 2N-CH 20V 2.5A 6TSOP |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 N-Channel (Dual) | Logic Level Gate, 4.5V Drive | 20V | 2.5A | 50mOhm @ 2.5A, 4.5V | 1.2V @ 11µA | 3.2nC @ 4.5V | 419pF @ 10V | — |
|
BSL205NL6327
SMALL SIGNAL N-CHANNEL MOSFET |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 2.5A | 50mOhm @ 2.5A, 4.5V | 1.2V @ 11µA | 3.2nC @ 4.5V | 419pF @ 10V | — |
|
BSL205NL6327HTSA1
MOSFET 2N-CH 20V 2.5A 6TSOP |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 2.5A | 50mOhm @ 2.5A, 4.5V | 1.2V @ 11µA | 3.2nC @ 4.5V | 419pF @ 10V | — |
|
BSL207NH6327XTSA1
MOSFET 2N-CH 20V 2.1A 6TSOP |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SC-74, SOT-457 | 500mW | PG-TSOP-6-1 | 2 N-Channel (Dual) | Logic Level Gate, 2.5V Drive | 20V | 2.1A | 70mOhm @ 2.1A, 4.5V | 1.2V @ 11µA | 2.1nC @ 4.5V | 419pF @ 10V | — |
|
BSL207NL6327
SMALL SIGNAL N-CHANNEL MOSFET |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 2.1A | 70mOhm @ 2.1A, 4.5V | 1.2V @ 11µA | 2.1nC @ 4.5V | 419pF @ 10V | — |
|
BSL207NL6327HTSA1
MOSFET 2N-CH 20V 2.1A 6TSOP |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 2.1A | 70mOhm @ 2.1A, 4.5V | 1.2V @ 11µA | 2.1nC @ 4.5V | 419pF @ 10V | — |
|
BSL214NH6327XTSA1
MOSFET 2N-CH 20V 1.5A 6TSOP |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 N-Channel (Dual) | Logic Level Gate, 2.5V Drive | 20V | 1.5A | 140mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.8nC @ 5V | 143pF @ 10V | — |
|
BSL214NL6327
SMALL SIGNAL N-CHANNEL MOSFET |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 1.5A | 140mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.8nC @ 5V | 143pF @ 10V | — |
|
BSL214NL6327HTSA1
MOSFET 2N-CH 20V 1.5A 6TSOP |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 1.5A | 140mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.8nC @ 5V | 143pF @ 10V | — |
|
BSL215CH6327XTSA1
MOSFET N/P-CH 20V 1.5A TSOP-6 |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | N and P-Channel Complementary | Logic Level Gate, 2.5V Drive | 20V | 1.5A | 140mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.73nC @ 4.5V | 143pF @ 10V | — |
|
BSL215CL6327HTSA1
MOSFET N/P-CH 20V 1.5A TSOP-6 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | N and P-Channel | Logic Level Gate | 20V | 1.5A | 140mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.73nC @ 4.5V | 143pF @ 10V | — |
|
BSL215PL6327
P-CHANNEL MOSFET |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 P-Channel (Dual) | Logic Level Gate | 20V | 1.5A | 150mOhm @ 1.5A, 4.5V | 1.2V @ 11µA | 3.55nC @ 4.5V | 346pF @ 15V | — |
|
BSL215PL6327HTSA1
MOSFET 2P-CH 20V 1.5A TSOP-6 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 P-Channel (Dual) | Logic Level Gate | 20V | 1.5A | 150mOhm @ 1.5A, 4.5V | 1.2V @ 11µA | 3.55nC @ 4.5V | 346pF @ 15V | — |
|
BSL306NH6327XTSA1
MOSFET 2N-CH 30V 2.3A 6TSOP |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 N-Channel (Dual) | Logic Level Gate, 4.5V Drive | 30V | 2.3A | 57mOhm @ 2.3A, 10V | 2V @ 11µA | 1.6nC @ 5V | 275pF @ 15V | — |
|
BSL306NL6327HTSA1
MOSFET 2N-CH 30V 2.3A 6TSOP |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 N-Channel (Dual) | Logic Level Gate | 30V | 2.3A | 57mOhm @ 2.3A, 10V | 2V @ 11µA | 1.6nC @ 5V | 275pF @ 15V | — |
|
BSL308CH6327XTSA1
MOSFET N/P-CH 30V 2.3A/2A 6TSOP |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | N and P-Channel Complementary | Logic Level Gate, 4.5V Drive | 30V | 2.3A, 2A | 57mOhm @ 2.3A, 10V | 2V @ 11µA | 1.5nC @ 10V | 275pF @ 15V | — |
|
BSL308CL6327HTSA1
MOSFET N/P-CH 30V 2.3A/2A 6TSOP |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | N and P-Channel | Logic Level Gate | 30V | 2.3A, 2A | 80mOhm @ 2A, 10V | 2V @ 11µA | 500nC @ 10V | 275pF @ 15V | — |
|
BSL308PEH6327XTSA1
MOSFET 2P-CH 30V 2A 6TSOP |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 P-Channel (Dual) | Logic Level Gate, 4.5V Drive | 30V | 2A | 80mOhm @ 2A, 10V | 1V @ 11µA | 5nC @ 10V | 500pF @ 15V | — |
|
BSL308PEL6327HTSA1
MOSFET 2P-CH 30V 2A 6TSOP |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2A | 80mOhm @ 2A, 10V | 1V @ 11µA | 5nC @ 10V | 500pF @ 15V | — |
|
BSL314PEH6327XTSA1
MOSFET 2P-CH 30V 1.5A 6TSOP |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 P-Channel (Dual) | Logic Level Gate, 4.5V Drive | 30V | 1.5A | 140mOhm @ 1.5A, 10V | 2V @ 6.3µA | 2.9nC @ 10V | 294pF @ 15V | — |
|
BSL314PEL6327HTSA1
MOSFET 2P-CH 30V 1.5A 6TSOP |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 P-Channel (Dual) | Logic Level Gate | 30V | 1.5A | 140mOhm @ 1.5A, 10V | 2V @ 6.3µA | 2.9nC @ 10V | 294pF @ 15V | — |
|
BSL315PL6327HTSA1
MOSFET 2P-CH 30V 1.5A TSOP-6 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 P-Channel (Dual) | Logic Level Gate | 30V | 1.5A | 150mOhm @ 1.5A, 10V | 2V @ 11µA | 2.3nC @ 5V | 282pF @ 15V | — |
|
BSL316CH6327XTSA1
MOSFET N/P-CH 30V 1.4A/1.5A TSOP |
Infineon Technologies | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | N and P-Channel Complementary | Logic Level Gate, 4.5V Drive | 30V | 1.4A, 1.5A | 160mOhm @ 1.4A, 10V | 2V @ 3.7µA | 0.6nC @ 5V | 282pF @ 15V | — |
|
BSL316CL6327
P-CHANNEL MOSFET |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | N and P-Channel | Logic Level Gate | 30V | 1.4A, 1.5A | 160mOhm @ 1.4A, 10V | 2V @ 3.7µA | 0.6nC @ 5V | 94pF @ 15V | — |
|
BSL316CL6327HTSA1
MOSFET N/P-CH 30V TSOP-6 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | N and P-Channel | Logic Level Gate | 30V | 1.4A, 1.5A | 160mOhm @ 1.4A, 10V | 2V @ 3.7µA | 0.6nC @ 5V | 94pF @ 15V | — |
|
BSL806NH6327XTSA1
MOSFET 2 N-CH 20V 2.3A TSOP6-6 |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 N-Channel (Dual) | Logic Level Gate, 1.8V Drive | 20V | 2.3A (Ta) | 57mOhm @ 2.3A, 2.5V | 750mV @ 11µA | 1.7nC @ 2.5V | 259pF @ 10V | — |
|
BSL806NL6327
SMALL SIGNAL N-CHANNEL MOSFET |
Rochester Electronics | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 2.3A | 57mOhm @ 2.3A, 2.5V | 750mV @ 11µA | 1.7nC @ 2.5V | 259pF @ 10V | — |
|
BSL806NL6327HTSA1
MOSFET 2N-CH 20V 2.3A 6TSOP |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 2.3A | 57mOhm @ 2.3A, 2.5V | 750mV @ 11µA | 1.7nC @ 2.5V | 259pF @ 10V | — |
|
BSM080D12P2C008
SIC POWER MODULE-1200V-80A |
ROHM Semiconductor | Active | 175°C (TJ) | Chassis Mount | Module | 600W | Module | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 80A (Tc) | — | 4V @ 13.2mA | — | 800pF @ 10V | — |
|
BSM120C12P2C201
1200V, 134A, CHOPPER, SILICON-CA |
ROHM Semiconductor | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | 935W (Tc) | Module | 2 N-Channel | Silicon Carbide (SiC) | 1200V (1.2kV) | 134A (Tc) | — | 4V @ 22mA | — | 14000pF @ 10V | — |
|
BSM120D12P2C005
MOSFET 2N-CH 1200V 120A MODULE |
ROHM Semiconductor | Active | -40°C ~ 150°C (TJ) | — | Module | 780W | Module | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 120A (Tc) | — | 2.7V @ 22mA | — | 14000pF @ 10V | — |
|
BSM180D12P2C101
MOSFET 2N-CH 1200V 180A MODULE |
ROHM Semiconductor | Active | -40°C ~ 150°C (TJ) | — | Module | 1130W | Module | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 204A (Tc) | — | 4V @ 35.2mA | — | 23000pF @ 10V | — |
|
BSM180D12P2E002
1200V, 204A, HALF BRIDGE, SILICO |
ROHM Semiconductor | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | 1360W (Tc) | Module | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 204A (Tc) | — | 4V @ 35.2mA | — | 18000pF @ 10V | — |
|
BSM180D12P3C007
SIC POWER MODULE |
ROHM Semiconductor | Active | 175°C (TJ) | Surface Mount | Module | 880W | Module | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 180A (Tc) | — | 5.6V @ 50mA | — | 900pF @ 10V | — |
|
BSM250D17P2E004
HALF BRIDGE MODULE CONSISTING OF |
ROHM Semiconductor | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | 1800W (Tc) | Module | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1700V (1.7kV) | 250A (Tc) | — | 4V @ 66mA | — | 30000pF @ 10V | — |
|
BSM300D12P2E001
MOSFET 2N-CH 1200V 300A |
ROHM Semiconductor | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | 1875W | Module | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 300A (Tc) | — | 4V @ 68mA | — | 35000pF @ 10V | — |