Transistörler - IGBT - Tekil
- Komponent
- 4,505
- Marka
- 19
Komponentler
4,505 sonuç · Sayfa 6/91| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Input Type | Power - Max | Supplier Device Package | Reverse Recovery Time (trr) | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Test Condition | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT45GP120BG
IGBT 1200V 100A 625W TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | Standard | 625 W | TO-247 [B] | — | 100 A | 1200 V | PT | 3.9V @ 15V, 45A | 170 A | 900µJ (on), 904µJ (off) | 185 nC | 18ns/102ns | 600V, 45A, 5Ohm, 15V | — |
|
APT45GR65B
IGBT 650V 92A 357W TO-247 |
Microchip Technology | Active | — | Through Hole | TO-247-3 | Standard | 357 W | TO-247 | — | 92 A | 650 V | NPT | 2.4V @ 15V, 45A | 168 A | 900µJ (on), 580µJ (off) | 203 nC | 15ns/100ns | 433V, 45A, 4.3Ohm, 15V | — |
|
APT45GR65B2DU30
INSULATED GATE BIPOLAR TRANSISTO |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | Standard | 543 W | T-MAX™ [B2] | 80 ns | 118 A | 650 V | NPT | 2.4V @ 15V, 45A | 224 A | — | 203 nC | 15ns/100ns | 433V, 45A, 4.3Ohm, 15V | — |
|
APT45GR65BSCD10
INSULATED GATE BIPOLAR TRANSISTO |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | Standard | 543 W | TO-247 | 80 ns | 118 A | 650 V | NPT | 2.4V @ 15V, 45A | 224 A | — | 203 nC | 15ns/100ns | 433V, 45A, 4.3Ohm, 15V | — |
|
APT45GR65SSCD10
INSULATED GATE BIPOLAR TRANSISTO |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Standard | 543 W | D3PAK | 80 ns | 118 A | 650 V | NPT | 2.4V @ 15V, 45A | 224 A | — | 203 nC | 15ns/100ns | 433V, 45A, 4.3Ohm, 15V | — |
|
APT50GF120B2RG
IGBT 1200V 135A 781W TMAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | Standard | 781 W | — | — | 135 A | 1200 V | NPT | 3V @ 15V, 50A | 150 A | 3.6mJ (on), 2.64mJ (off) | 340 nC | 25ns/260ns | 800V, 50A, 1Ohm, 15V | — |
|
APT50GF120LRG
IGBT 1200V 135A 781W TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | Standard | 781 W | TO-264 [L] | — | 135 A | 1200 V | NPT | 3V @ 15V, 50A | 150 A | 3.6mJ (on), 2.64mJ (off) | 340 nC | 25ns/260ns | 800V, 50A, 1Ohm, 15V | — |
|
APT50GN120B2G
IGBT 1200V 134A 543W TO-247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | Standard | 543 W | — | — | 134 A | 1200 V | NPT, Trench Field Stop | 2.1V @ 15V, 50A | 150 A | 4495µJ (off) | 315 nC | 28ns/320ns | 800V, 50A, 2.2Ohm, 15V | — |
|
APT50GN120L2DQ2G
IGBT 1200V 134A 543W TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | Standard | 543 W | — | — | 134 A | 1200 V | NPT, Trench Field Stop | 2.1V @ 15V, 50A | 150 A | 4495µJ (off) | 315 nC | 28ns/320ns | 800V, 50A, 2.2Ohm, 15V | — |
|
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247 |
Microchip Technology | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | Standard | 366 W | TO-247 [B] | — | 107 A | 600 V | Trench Field Stop | 1.85V @ 15V, 50A | 150 A | 1185µJ (on), 1565µJ (off) | 325 nC | 20ns/230ns | 400V, 50A, 4.3Ohm, 15V | — |
|
APT50GN60BDQ3G
IGBT FIELDSTOP COMBI 600V 50A TO |
Microchip Technology | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | Standard | 366 W | TO-247-3 | 35 ns | 107 A | 600 V | Trench Field Stop | 1.85V @ 15V, 50A | 150 A | 1.185mJ (on), 1.565mJ (off) | 325 nC | 20ns/230ns | 400V, 50A, 4.3Ohm, 15V | — |
|
APT50GN60BG
IGBT 600V 107A 366W TO247 |
Microchip Technology | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | Standard | 366 W | TO-247 [B] | — | 107 A | 600 V | Trench Field Stop | 1.85V @ 15V, 50A | 150 A | 1185µJ (on), 1565µJ (off) | 325 nC | 20ns/230ns | 400V, 50A, 4.3Ohm, 15V | — |
|
APT50GP60B2DQ2G
IGBT 600V 150A 625W TMAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | Standard | 625 W | — | — | 150 A | 600 V | PT | 2.7V @ 15V, 50A | 190 A | 465µJ (on), 635µJ (off) | 165 nC | 19ns/85ns | 400V, 50A, 4.3Ohm, 15V | — |
|
APT50GP60BG
IGBT 600V 100A 625W TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | Standard | 625 W | TO-247 [B] | — | 100 A | 600 V | PT | 2.7V @ 15V, 50A | 190 A | 465µJ (on), 637µJ (off) | 165 nC | 19ns/83ns | 400V, 50A, 5Ohm, 15V | — |
|
APT50GP60LDLG
IGBT 600V 150A 625W TO264 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | Standard | 625 W | TO-264 | — | 150 A | 600 V | PT | 2.7V @ 15V, 50A | 190 A | 456µJ (on), 635µJ (off) | 165 nC | 19ns/85ns | 400V, 50A, 4.3Ohm, 15V | — |
|
APT50GR120B2
IGBT 1200V 117A 694W TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | Standard | 694 W | TO-247 | — | 117 A | 1200 V | NPT | 3.2V @ 15V, 50A | 200 A | 2.14mJ (on), 1.48mJ (off) | 445 nC | 28ns/237ns | 600V, 50A, 4.3Ohm, 15V | — |
|
APT50GR120L
IGBT 1200V 117A 694W TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | Standard | 694 W | TO-264 | — | 117 A | 1200 V | NPT | 3.2V @ 15V, 50A | 200 A | 2.14mJ (on), 1.48mJ (off) | 445 nC | 28ns/237ns | 600V, 50A, 4.3Ohm, 15V | — |
|
APT50GS60BRDLG
IGBT 600V 93A 415W TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | Standard | 415 W | TO-247 | — | 93 A | 600 V | NPT | 3.15V @ 15V, 50A | 195 A | 755µJ (off) | 235 nC | 16ns/225ns | 400V, 50A, 4.7Ohm, 15V | — |
|
APT50GS60BRDQ2G
IGBT 600V 93A 415W TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | Standard | 415 W | TO-247 [B] | 25 ns | 93 A | 600 V | NPT | 3.15V @ 15V, 50A | 195 A | 755µJ (off) | 235 nC | 16ns/225ns | 400V, 40A, 4.7Ohm, 15V | — |
|
APT50GS60BRG
IGBT 600V 93A 415W TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | Standard | 415 W | TO-247 [B] | — | 93 A | 600 V | NPT | 3.15V @ 15V, 50A | 195 A | 755µJ (off) | 235 nC | 16ns/225ns | 400V, 50A, 4.7Ohm, 15V | — |
|
APT50GT120B2RDLG
IGBT 1200V 106A 694W TO-247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | Standard | 694 W | — | — | 106 A | 1200 V | NPT | 3.7V @ 15V, 50A | 150 A | 3585µJ (on), 1910µJ (off) | 240 nC | 23ns/215ns | 800V, 50A, 4.7Ohm, 15V | — |
|
APT50GT120B2RDQ2G
IGBT 1200V 94A 625W TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | Standard | 625 W | — | — | 94 A | 1200 V | NPT | 3.7V @ 15V, 50A | 150 A | 2330µJ (off) | 340 nC | 24ns/230ns | 800V, 50A, 4.7Ohm, 15V | — |
|
APT50GT120B2RG
IGBT 1200V 94A 625W TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | Standard | 625 W | — | — | 94 A | 1200 V | NPT | 3.7V @ 15V, 50A | 150 A | 2330µJ (off) | 340 nC | 24ns/230ns | 800V, 50A, 4.7Ohm, 15V | — |
|
APT50GT120LRDQ2G
IGBT 1200V 106A 694W TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | Standard | 694 W | TO-264 [L] | — | 106 A | 1200 V | NPT | 3.7V @ 15V, 50A | 150 A | 2585µJ (on), 1910µJ (off) | 240 nC | 23ns/215ns | 800V, 50A, 1Ohm, 15V | — |
|
APT50GT120LRG
IGBT NPT SINGLE 1200V 50A TO-264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | Standard | 625 W | TO-264 (L) | — | 50 A | 1200 V | NPT | 3.7V @ 15V, 50A | 150 A | -, 2.33mJ (off) | 340 nC | 24ns/230ns | 800V, 50A, 4.7Ohm, 15V | — |
|
APT50GT60BRDQ2G
IGBT 600V 110A 446W TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | Standard | 446 W | TO-247 [B] | 22 ns | 110 A | 600 V | NPT | 2.5V @ 15V, 50A | 150 A | 995µJ (on), 1070µJ (off) | 240 nC | 14ns/240ns | 400V, 50A, 5Ohm, 15V | — |
|
APT50GT60BRG
IGBT 600V 110A 446W TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | Standard | 446 W | TO-247 [B] | — | 110 A | 600 V | NPT | 2.5V @ 15V, 50A | 150 A | 995µJ (on), 1070µJ (off) | 240 nC | 14ns/240ns | 400V, 50A, 4.3Ohm, 15V | — |
|
APT54GA60B
IGBT 600V 96A 416W TO-247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | Standard | 416 W | TO-247 [B] | — | 96 A | 600 V | PT | 2.5V @ 15V, 32A | 161 A | 534µJ (on), 466µJ (off) | 158 nC | 17ns/112ns | 400V, 32A, 4.7Ohm, 15V | — |
|
APT54GA60BD30
IGBT 600V 96A 416W TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | Standard | 416 W | TO-247 [B] | — | 96 A | 600 V | PT | 2.5V @ 15V, 32A | 161 A | 534µJ (on), 466µJ (off) | 28 nC | 17ns/112ns | 400V, 32A, 4.7Ohm, 15V | — |
|
APT60GT60BRG
IGBT 600V 100A 500W TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | Standard | 500 W | TO-247 [B] | — | 100 A | 600 V | NPT | 2.5V @ 15V, 60A | 360 A | 3.4mJ | 275 nC | 26ns/395ns | — | — |
|
APT64GA90B
IGBT 900V 117A 500W TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | Standard | 500 W | TO-247 [B] | — | 117 A | 900 V | PT | 3.1V @ 15V, 38A | 193 A | 1857µJ (on), 2311µJ (off) | 162 nC | 18ns/131ns | 600V, 38A, 4.7Ohm, 15V | — |
|
APT64GA90B2D30
IGBT 900V 117A 500W TO-247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | Standard | 500 W | — | — | 117 A | 900 V | PT | 3.1V @ 15V, 38A | 193 A | 1192µJ (on), 1088µJ (off) | 162 nC | 18ns/131ns | 600V, 38A, 4.7Ohm, 15V | — |
|
APT64GA90LD30
IGBT 900V 117A 500W TO-264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | Standard | 500 W | TO-264 [L] | — | 117 A | 900 V | PT | 3.1V @ 15V, 38A | 193 A | 1192µJ (on), 1088µJ (off) | 162 nC | 18ns/131ns | 600V, 38A, 4.7Ohm, 15V | — |
|
APT65GP60B2G
IGBT 600V 100A 833W TMAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | Standard | 833 W | — | — | 100 A | 600 V | PT | 2.7V @ 15V, 65A | 250 A | 605µJ (on), 896µJ (off) | 210 nC | 30ns/91ns | 400V, 65A, 5Ohm, 15V | — |
|
APT65GP60L2DQ2G
IGBT 600V 198A 833W TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | Standard | 833 W | — | — | 198 A | 600 V | PT | 2.7V @ 15V, 65A | 250 A | 605µJ (on), 895µJ (off) | 210 nC | 30ns/90ns | 400V, 65A, 5Ohm, 15V | — |
|
APT68GA60B
IGBT 600V 121A 520W TO-247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | Standard | 520 W | TO-247 [B] | — | 121 A | 600 V | PT | 2.5V @ 15V, 40A | 202 A | 715µJ (on), 607µJ (off) | 298 nC | 21ns/133ns | 400V, 40A, 4.7Ohm, 15V | — |
|
APT68GA60B2D40
IGBT 600V 121A 520W TO-247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | Standard | 520 W | — | — | 121 A | 600 V | PT | 2.5V @ 15V, 40A | 202 A | 715µJ (on), 607µJ (off) | 198 nC | 21ns/133ns | 400V, 40A, 4.7Ohm, 15V | — |
|
APT68GA60LD40
IGBT 600V 121A 520W TO-264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | Standard | 520 W | TO-264 [L] | 22 ns | 121 A | 600 V | PT | 2.5V @ 15V, 40A | 202 A | 715µJ (on), 607µJ (off) | 198 nC | 21ns/133ns | 400V, 40A, 4.7Ohm, 15V | — |
|
APT70GR120B2
IGBT 1200V 160A 961W TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | Standard | 961 W | TO-247 | — | 160 A | 1200 V | NPT | 3.2V @ 15V, 70A | 280 A | 3.82mJ (on), 2.58mJ (off) | 544 nC | 33ns/278ns | 600V, 70A, 4.3Ohm, 15V | — |
|
APT70GR120L
IGBT 1200V 160A 961W TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | Standard | 961 W | TO-264 | — | 160 A | 1200 V | NPT | 3.2V @ 15V, 70A | 280 A | 3.82mJ (on), 2.58mJ (off) | 544 nC | 33ns/278ns | 600V, 70A, 4.3Ohm, 15V | — |
|
APT70GR65B
IGBT 650V 134A 595W TO-247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | Standard | 595 W | TO-247 | — | 134 A | 650 V | NPT | 2.4V @ 15V, 70A | 260 A | 1.51mJ (on), 1.46mJ (off) | 305 nC | 19ns/170ns | 433V, 70A, 4.3Ohm, 15V | — |
|
APT70GR65B2DU40
INSULATED GATE BIPOLAR TRANSISTO |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | Standard | 595 W | T-MAX™ [B2] | — | 134 A | 650 V | NPT | 2.4V @ 15V, 70A | 280 A | — | 305 nC | 18ns/170ns | 433V, 70A, 4.3Ohm, 15V | — |
|
APT70GR65B2SCD30
INSULATED GATE BIPOLAR TRANSISTO |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | — | 595 W | T-MAX™ [B2] | — | 134 A | 650 V | NPT | 2.4V @ 15V, 70A | 260 A | — | 305 nC | 19ns/170ns | 433V, 70A, 4.3Ohm, 15V | — |
|
APT75GN120B2G
IGBT 1200V 200A 833W TMAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | Standard | 833 W | — | — | 200 A | 1200 V | Trench Field Stop | 2.1V @ 15V, 75A | 225 A | 8045µJ (on), 7640µJ (off) | 425 nC | 60ns/620ns | 800V, 75A, 1Ohm, 15V | — |
|
APT75GN120LG
IGBT 1200V 200A 833W TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | Standard | 833 W | TO-264 [L] | — | 200 A | 1200 V | Trench Field Stop | 2.1V @ 15V, 75A | 225 A | 8620µJ (on), 11400µJ (off) | 425 nC | 60ns/620ns | 800V, 75A, 1Ohm, 15V | — |
|
APT75GN60B2DQ3G
IGBT 600V 155A 536W TO264 |
Microchip Technology | Obsolete | — | Through Hole | TO-264-3, TO-264AA | Standard | 536 W | — | — | 155 A | 600 V | — | 1.85V @ 15V, 75A | 225 A | 2500µJ (on), 2140µJ (off) | 485 nC | 47ns/385ns | 400V, 75A, 1Ohm, 15V | — |
|
APT75GN60BDQ2G
IGBT FIELDSTOP SINGLE 600V 75A T |
Microchip Technology | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | Standard | 536 W | TO-247-3 | 25 ns | 155 A | 600 V | Trench Field Stop | 1.85V @ 15V, 75A | 225 A | 2.5mJ (on), 2.14mJ (off) | 485 nC | 47ns/385ns | 400V, 75A, 1Ohm, 15V | — |
|
APT75GN60BG
IGBT 600V 155A 536W TO247 |
Microchip Technology | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | Standard | 536 W | TO-247 [B] | — | 155 A | 600 V | Trench Field Stop | 1.85V @ 15V, 75A | 225 A | 2500µJ (on), 2140µJ (off) | 485 nC | 47ns/385ns | 400V, 75A, 1Ohm, 15V | — |
|
APT75GN60LDQ3G
IGBT 600V 155A 536W TO264 |
Microchip Technology | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-264-3, TO-264AA | Standard | 536 W | TO-264 [L] | — | 155 A | 600 V | Trench Field Stop | 1.85V @ 15V, 75A | 225 A | 2500µJ (on), 2140µJ (off) | 485 nC | 47ns/385ns | 400V, 75A, 1Ohm, 15V | — |
|
APT75GN60SDQ2G
IGBT FIELDSTOP COMBI 600V 75A TO |
Microchip Technology | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | Standard | 536 W | D3PAK | 25 ns | 155 A | 600 V | Trench Field Stop | 1.85V @ 15V, 75A | 225 A | 2.5mJ (on), 2.14mJ (off) | 485 nC | 47ns/385ns | 400V, 75A, 1Ohm, 15V | — |