Fevaris Elektronik

Ayrık Yarı İletken Ürünler

Transistörler - FET, MOSFET - RF

Komponent: 3,912
Marka: 26

Komponentler

3,912 sonuç · Sayfa 52/79

Parça No	Üretici	Part Status	Voltage - Rated	Package / Case	Frequency	Current Rating (Amps)	Supplier Device Package	Power - Output	Current - Test	Transistor Type	Gain	Voltage - Test	Noise Figure	Datasheet
MRF6S9130HSR3 RF ULTRA HIGH FREQUENCY BAND, N-	Rochester Electronics	Obsolete	68 V	NI-780S	880MHz	—	NI-780S	27W	950 mA	LDMOS	19.2dB	28 V	—	—
MRF6S9130HSR5 FET RF 68V 880MHZ NI-780S	Rochester Electronics	Obsolete	68 V	NI-780S	880MHz	—	NI-780S	27W	950 mA	LDMOS	19.2dB	28 V	—	—
MRF6S9160HR3 RF ULTRA HIGH FREQUENCY BAND, N-	Rochester Electronics	Obsolete	68 V	SOT-957A	880MHz	—	NI-780H-2L	35W	1.2 A	LDMOS	20.9dB	28 V	—	—
MRF6S9160HR5 FET RF 68V 880MHZ NI-780	NXP Semiconductors	Obsolete	68 V	SOT-957A	880MHz	—	NI-780H-2L	35W	1.2 A	LDMOS	20.9dB	28 V	—	—
MRF6S9160HSR3 RF ULTRA HIGH FREQUENCY BAND, N-	Rochester Electronics	Obsolete	68 V	NI-780S	880MHz	10µA	NI-780S	35W	1.2 A	LDMOS	20.9dB	28 V	—	—
MRF6S9160HSR5 FET RF 68V 880MHZ NI-780S	NXP Semiconductors	Obsolete	68 V	NI-780S	880MHz	—	NI-780S	35W	1.2 A	LDMOS	20.9dB	28 V	—	—
MRF6V10010NR4 FET RF 100V 1.09GHZ PLD-1.5	NXP Semiconductors	Active	100 V	PLD-1.5	1.09GHz	—	PLD-1.5	10W	10 mA	LDMOS	25dB	50 V	—	—
MRF6V10250HSR3 FET RF 100V 1.09GHZ NI780S	NXP Semiconductors	Obsolete	100 V	NI-780S	1.09GHz	—	NI-780S	250W	250 mA	LDMOS	21dB	50 V	—	—
MRF6V10250HSR5 FET RF 100V 1.09GHZ NI780S	NXP Semiconductors	Obsolete	100 V	NI-780S	1.09GHz	—	NI-780S	250W	250 mA	LDMOS	21dB	50 V	—	—
MRF6V12250HR3 FET RF 100V 1.03GHZ NI-780	NXP Semiconductors	Market	100 V	SOT-957A	1.03GHz	—	NI-780H-2L	275W	100 mA	LDMOS	20.3dB	50 V	—	—
MRF6V12250HR5 FET RF 100V 1.03GHZ NI-780	NXP Semiconductors	Active	100 V	SOT-957A	1.03GHz	—	NI-780H-2L	275W	100 mA	LDMOS	20.3dB	50 V	—	—
MRF6V12250HSR3 FET RF 100V 1.03GHZ NI-780S	NXP Semiconductors	Market	100 V	NI-780S	1.03GHz	—	NI-780S	275W	100 mA	LDMOS	20.3dB	50 V	—	—
MRF6V12250HSR5 FET RF 100V 1.03GHZ NI-780S	NXP Semiconductors	Active	100 V	NI-780S	1.03GHz	—	NI-780S	275W	100 mA	LDMOS	20.3dB	50 V	—	—
MRF6V12500GSR5 PULSED LATERAL N-CHANNEL RF POWE	NXP Semiconductors	Active	110 V	NI-780GS-2L	960MHz ~ 1.215GHz	200µA	NI-780GS-2L	—	200 mA	LDMOS	19.7dB	50 V	—	—
MRF6V12500HR3 FET RF 110V 1.03GHZ NI-780H	NXP Semiconductors	Market	110 V	SOT-957A	1.03GHz	—	NI-780H-2L	500W	200 mA	LDMOS	19.7dB	50 V	—	—
MRF6V12500HR5 FET RF 110V 1.03GHZ NI-780H	NXP Semiconductors	Active	110 V	SOT-957A	1.03GHz	—	NI-780H-2L	500W	200 mA	LDMOS	19.7dB	50 V	—	—
MRF6V12500HSR3 FET RF 110V 1.03GHZ NI780HS	NXP Semiconductors	Market	110 V	NI-780S	1.03GHz	—	NI-780S	500W	200 mA	LDMOS	19.7dB	50 V	—	—
MRF6V12500HSR5 FET RF 110V 1.03GHZ NI-1230H	NXP Semiconductors	Active	110 V	NI-780S	1.03GHz	—	NI-780S	500W	200 mA	LDMOS	19.7dB	50 V	—	—
MRF6V13250HR3 FET RF 120V 1.3GHZ NI-780	NXP Semiconductors	Market	120 V	SOT-957A	1.3GHz	—	NI-780H-2L	250W	100 mA	LDMOS	22.7dB	50 V	—	—
MRF6V13250HR5 RF L BAND, N-CHANNEL	Rochester Electronics	Obsolete	120 V	SOT-957A	1.3GHz	—	NI-780H-2L	250W	100 mA	LDMOS	22.7dB	50 V	—	—
MRF6V13250HSR3 FET RF 120V 1.3GHZ NI780S	NXP Semiconductors	Market	120 V	NI-780S	1.3GHz	—	NI-780S	250W	100 mA	LDMOS	22.7dB	50 V	—	—
MRF6V13250HSR5 FET RF 120V 1.3GHZ NI780S	NXP Semiconductors	Obsolete	120 V	NI-780S	1.3GHz	—	NI-780S	250W	100 mA	LDMOS	22.7dB	50 V	—	—
MRF6V14300HR3 FET RF 100V 1.4GHZ NI780	NXP Semiconductors	Market	100 V	SOT-957A	1.4GHz	—	NI-780H-2L	330W	150 mA	LDMOS	18dB	50 V	—	—
MRF6V14300HR5 RF POWER FIELD-EFFECT TRANSISTOR	Rochester Electronics	Active	100 V	SOT-957A	1.4GHz	—	NI-780H-2L	330W	150 mA	LDMOS	18dB	50 V	—	—
MRF6V14300HR5 RF MOSFET LDMOS 50V NI780H	NXP Semiconductors	Active	100 V	SOT-957A	1.4GHz	—	NI-780H-2L	330W	150 mA	LDMOS	18dB	50 V	—	—
MRF6V14300HS FET RF 100V 1.4GHZ NI780S	Rochester Electronics	Active	—	—	—	—	—	—	—	—	—	—	—	—
MRF6V14300HSR3 FET RF 100V 1.4GHZ NI780S	NXP Semiconductors	Market	100 V	NI-780S	1.4GHz	—	NI-780S	330W	150 mA	LDMOS	18dB	50 V	—	—
MRF6V14300HSR5 RF MOSFET LDMOS 50V NI-780S	NXP Semiconductors	Active	100 V	NI-780S	1.4GHz	—	NI-780S	330W	150 mA	LDMOS	18dB	50 V	—	—
MRF6V14300HSR5 RF POWER FIELD-EFFECT TRANSISTOR	Rochester Electronics	Active	100 V	NI-780S	1.4GHz	—	NI-780S	330W	150 mA	LDMOS	18dB	50 V	—	—
MRF6V2010GNR1 FET RF 110V 220MHZ TO-270G-2	NXP Semiconductors	Obsolete	110 V	TO-270BA	220MHz	—	TO-270G-2	10W	30 mA	LDMOS	23.9dB	50 V	—	—
MRF6V2010GNR5 FET RF 110V 220MHZ TO-270G-2	NXP Semiconductors	Obsolete	110 V	TO-270BA	220MHz	—	TO-270G-2	10W	30 mA	LDMOS	23.9dB	50 V	—	—
MRF6V2010NBR1 FET RF 110V 220MHZ TO272-2	NXP Semiconductors	Obsolete	110 V	TO-272BC	220MHz	—	TO-272-2	10W	30 mA	LDMOS	23.9dB	50 V	—	—
MRF6V2010NBR5 FET RF 110V 220MHZ TO-272-2	NXP Semiconductors	Obsolete	110 V	TO-272BC	220MHz	—	TO-272-2	10W	30 mA	LDMOS	23.9dB	50 V	—	—
MRF6V2010NR1 FET RF 110V 220MHZ TO270-2	NXP Semiconductors	Obsolete	110 V	TO-270AA	220MHz	—	TO-270-2	10W	30 mA	LDMOS	23.9dB	50 V	—	—
MRF6V2150NBR1 FET RF 110V 220MHZ TO-272-4	NXP Semiconductors	Obsolete	110 V	TO-272BB	220MHz	—	TO-272 WB-4	150W	450 mA	LDMOS	25dB	50 V	—	—
MRF6V2150NBR5 RF ULTRA HIGH FREQUENCY BAND, N-	Rochester Electronics	Obsolete	110 V	TO-272BB	220MHz	—	TO-272 WB-4	150W	450 mA	LDMOS	25dB	50 V	—	—
MRF6V2150NR1 RF ULTRA HIGH FREQUENCY BAND, N-	Rochester Electronics	Active	110 V	TO-270AB	220MHz	—	TO-270 WB-4	150W	450 mA	LDMOS	25dB	50 V	—	—
MRF6V2150NR1 RF MOSFET LDMOS 50V TO270	NXP Semiconductors	Obsolete	110 V	TO-270AB	220MHz	—	TO-270 WB-4	150W	450 mA	LDMOS	25dB	50 V	—	—
MRF6V2300NBR1 FET RF 110V 220MHZ TO-272-4	NXP Semiconductors	Obsolete	110 V	TO-272BB	220MHz	—	TO-272 WB-4	300W	900 mA	LDMOS	25.5dB	50 V	—	—
MRF6V2300NBR5 FET RF 110V 220MHZ TO-272-4	NXP Semiconductors	Obsolete	110 V	TO-272BB	220MHz	—	TO-272 WB-4	300W	900 mA	LDMOS	25.5dB	50 V	—	—
MRF6V2300NR1 RF ULTRA HIGH FREQUENCY BAND, N-	Rochester Electronics	Obsolete	110 V	TO-270AB	220MHz	2.5mA	TO-270 WB-4	300W	900 mA	LDMOS	25.5dB	50 V	—	—
MRF6V2300NR5 RF POWER FIELD-EFFECT TRANSISTOR	Rochester Electronics	Obsolete	110 V	TO-270AB	220MHz	—	TO-270 WB-4	300W	900 mA	LDMOS	25.5dB	50 V	—	—
MRF6V3090NBR1 RF ULTRA HIGH FREQUENCY BAND, N-	Rochester Electronics	Active	110 V	TO-272BB	860MHz	—	TO-272 WB-4	18W	350 mA	LDMOS	22dB	50 V	—	—
MRF6V3090NBR1 RF MOSFET LDMOS 50V TO272-4	NXP Semiconductors	Obsolete	110 V	TO-272BB	860MHz	—	TO-272 WB-4	18W	350 mA	LDMOS	22dB	50 V	—	—
MRF6V3090NBR5 FET RF 110V 860MHZ TO272-4	NXP Semiconductors	Obsolete	110 V	TO-272BB	860MHz	—	TO-272 WB-4	18W	350 mA	LDMOS	22dB	50 V	—	—
MRF6V3090NR1 RF ULTRA HIGH FREQUENCY BAND, N-	Rochester Electronics	Active	110 V	TO-270AB	860MHz	—	TO-270 WB-4	18W	350 mA	LDMOS	22dB	50 V	—	—
MRF6V3090NR1 RF MOSFET LDMOS 50V TO270	NXP Semiconductors	Obsolete	110 V	TO-270AB	860MHz	—	TO-270 WB-4	18W	350 mA	LDMOS	22dB	50 V	—	—
MRF6V3090NR5 FET RF 110V 860MHZ TO270-4	NXP Semiconductors	Obsolete	110 V	TO-270AB	860MHz	—	TO-270 WB-4	18W	350 mA	LDMOS	22dB	50 V	—	—
MRF6V4300NBR1 FET RF 110V 450MHZ TO-272-4	NXP Semiconductors	Obsolete	110 V	TO-272BB	450MHz	—	TO-272 WB-4	300W	900 mA	LDMOS	22dB	50 V	—	—
MRF6V4300NBR5 RF POWER FIELD-EFFECT TRANSISTOR	Rochester Electronics	Obsolete	110 V	TO-272BB	450MHz	2.5mA	TO-272 WB-4	300W	900 mA	LDMOS	22dB	50 V	—	—

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