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Komponent
49,938
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Part Status

Mounting Type

Package / Case

Supplier Device Package

Speed

Voltage - DC Reverse (Vr) (Max)

Diode Type

Current - Average Rectified (Io)

Voltage - Forward (Vf) (Max) @ If

Current - Reverse Leakage @ Vr

Capacitance @ Vr, F

Reverse Recovery Time (trr)

Operating Temperature - Junction

Komponentler

10,000 sonuç · Sayfa 98/200
Parça No Üretici Part Status Mounting Type Package / Case Supplier Device Package Speed Voltage - DC Reverse (Vr) (Max) Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Capacitance @ Vr, F Reverse Recovery Time (trr) Operating Temperature - Junction Datasheet
1N774 BK

TRANSISTOR

Central Semiconductor Obsolete Through Hole DO-204AA, DO-7, Axial DO-7 Small Signal =< 200mA (Io), Any Speed 70 V Standard 100mA (DC) 1 V @ 100 mA 15 µA @ 10 V — — -65°C ~ 100°C —
1N8024-GA

DIODE SCHOTTKY 1.2KV 750MA TO257

GeneSiC Semiconductor Obsolete Through Hole TO-257-3 TO-257 No Recovery Time > 500mA (Io) 1200 V Silicon Carbide Schottky 750mA 1.74 V @ 750 mA 10 µA @ 1200 V 66pF @ 1V, 1MHz 0 ns -55°C ~ 250°C ✓
1N8026-GA

DIODE SILICON 1.2KV 8A TO257

GeneSiC Semiconductor Obsolete Through Hole TO-257-3 TO-257 No Recovery Time > 500mA (Io) 1200 V Silicon Carbide Schottky 8A (DC) 1.6 V @ 2.5 A 10 µA @ 1200 V 237pF @ 1V, 1MHz 0 ns -55°C ~ 250°C ✓
1N8028-GA

DIODE SCHOTTKY 1.2KV 9.4A TO257

GeneSiC Semiconductor Obsolete Through Hole TO-257-3 TO-257 No Recovery Time > 500mA (Io) 1200 V Silicon Carbide Schottky 9.4A (DC) 1.6 V @ 10 A 20 µA @ 1200 V 884pF @ 1V, 1MHz 0 ns -55°C ~ 250°C ✓
1N8030-GA

DIODE SCHOTTKY 650V 750MA TO257

GeneSiC Semiconductor Obsolete Through Hole TO-257-3 TO-257 No Recovery Time > 500mA (Io) 650 V Silicon Carbide Schottky 750mA 1.39 V @ 750 mA 5 µA @ 650 V 76pF @ 1V, 1MHz 0 ns -55°C ~ 250°C ✓
1N8031-GA

DIODE SCHOTTKY 650V 1A TO276

GeneSiC Semiconductor Obsolete Through Hole TO-276AA TO-276 No Recovery Time > 500mA (Io) 650 V Silicon Carbide Schottky 1A 1.5 V @ 1 A 5 µA @ 650 V 76pF @ 1V, 1MHz 0 ns -55°C ~ 250°C ✓
1N8032-GA

DIODE SCHOTTKY 650V 2.5A TO257

GeneSiC Semiconductor Obsolete Through Hole TO-257-3 TO-257 No Recovery Time > 500mA (Io) 650 V Silicon Carbide Schottky 2.5A 1.3 V @ 2.5 A 5 µA @ 650 V 274pF @ 1V, 1MHz 0 ns -55°C ~ 250°C ✓
1N8033-GA

DIODE SCHOTTKY 650V 4.3A TO276

GeneSiC Semiconductor Obsolete Surface Mount TO-276AA TO-276 No Recovery Time > 500mA (Io) 650 V Silicon Carbide Schottky 4.3A (DC) 1.65 V @ 5 A 5 µA @ 650 V 274pF @ 1V, 1MHz 0 ns -55°C ~ 250°C ✓
1N8034-GA

DIODE SCHOTTKY 650V 9.4A TO257

GeneSiC Semiconductor Obsolete Through Hole TO-257-3 TO-257 No Recovery Time > 500mA (Io) 650 V Silicon Carbide Schottky 9.4A (DC) 1.34 V @ 10 A 5 µA @ 650 V 1107pF @ 1V, 1MHz 0 ns -55°C ~ 250°C ✓
1N8035-GA

DIODE SCHOTTKY 650V 14.6A TO276

GeneSiC Semiconductor Obsolete Surface Mount TO-276AA TO-276 No Recovery Time > 500mA (Io) 650 V Silicon Carbide Schottky 14.6A (DC) 1.5 V @ 15 A 5 µA @ 650 V 1107pF @ 1V, 1MHz 0 ns -55°C ~ 250°C —
1N87A BK

TRANSISTOR

Central Semiconductor Obsolete Through Hole DO-204AA, DO-7, Axial DO-7 Small Signal =< 200mA (Io), Any Speed 23 V Standard 50mA 250 mV @ 100 µA 10 µA @ 1.5 V — — -50°C ~ 75°C —
1N87A TR

TRANSISTOR

Central Semiconductor Obsolete Through Hole DO-204AA, DO-7, Axial DO-7 Small Signal =< 200mA (Io), Any Speed 23 V Standard 50mA 250 mV @ 100 µA 10 µA @ 1.5 V — — -50°C ~ 75°C —
1N914

DIODE GEN PURP 75V 200MA DO35

Microchip Technology Active Through Hole DO-204AH, DO-35, Axial DO-35 (DO-204AH) Small Signal =< 200mA (Io), Any Speed 75 V Standard 200mA 1.2 V @ 50 mA 500 nA @ 75 V 4pF @ 0V, 1MHz 20 ns -65°C ~ 175°C —
1N914

D-SI 100V 200MA DO-35

NTE Electronics, Inc. Active Through Hole DO-204AH, DO-35, Axial DO-35 Small Signal =< 200mA (Io), Any Speed 100 V Standard 200mA 1 V @ 10 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns -65°C ~ 175°C —
1N914

DIODE FAST SIGNAL 300MA/100V

TubeDepot Active — — — — 100 V Standard 300mA — — — — — —
1N914

DIODE GEN PURP 100V 200MA DO35

onsemi Active Through Hole DO-204AH, DO-35, Axial DO-35 Small Signal =< 200mA (Io), Any Speed 100 V Standard 200mA 1 V @ 10 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns -65°C ~ 175°C —
1N914 BK TIN/LEAD

THROUGH-HOLE-DIODE-SWITCH

Central Semiconductor Active Through Hole DO-204AH, DO-35, Axial DO-35 Small Signal =< 200mA (Io), Any Speed 100 V Standard 150mA 1 V @ 10 mA 25 nA @ 20 V 4pF @ 0V, 1MHz 4 ns -65°C ~ 200°C —
1N914-T50A

DIODE GEN PURP 100V 200MA DO35

onsemi Active Through Hole DO-204AH, DO-35, Axial DO-35 Small Signal =< 200mA (Io), Any Speed 100 V Standard 200mA 1 V @ 10 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns 150°C (Max) —
1N914-TP

DIODE GEN PURP 100V 200MA DO35

Micro Commercial Components (MCC) Obsolete Through Hole DO-204AH, DO-35, Axial DO-35 Small Signal =< 200mA (Io), Any Speed 100 V Standard 200mA 1 V @ 10 mA 5 µA @ 75 V — 4 ns -55°C ~ 150°C ✓
1N914_NL

DIODE ZENER

Rochester Electronics Active Through Hole DO-204AH, DO-35, Axial DO-35 (DO-204AH) Small Signal =< 200mA (Io), Any Speed 100 V Standard 200mA 1 V @ 10 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns -55°C ~ 175°C —
1N914_S00Z

DIODE GEN PURP 100V 200MA DO35

onsemi Obsolete Through Hole DO-204AH, DO-35, Axial DO-35 Small Signal =< 200mA (Io), Any Speed 100 V Standard 200mA 1 V @ 10 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns -55°C ~ 175°C —
1N914_T26A

DIODE GEN PURP 100V 200MA DO35

onsemi Obsolete Through Hole DO-204AH, DO-35, Axial DO-35 Small Signal =< 200mA (Io), Any Speed 100 V Standard 200mA 1 V @ 10 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns 150°C (Max) —
1N914_T50R

DIODE GEN PURP 100V 200MA DO35

onsemi Obsolete Through Hole DO-204AH, DO-35, Axial DO-35 Small Signal =< 200mA (Io), Any Speed 100 V Standard 200mA 1 V @ 10 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns 150°C (Max) —
1N914A

ZENER DIODE

Rochester Electronics Obsolete Through Hole DO-204AH, DO-35, Axial DO-35 (DO-204AH) Small Signal =< 200mA (Io), Any Speed 100 V Standard 200mA 1 V @ 20 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns 175°C (Max) —
1N914A

D-SI 100PRV .02A

NTE Electronics, Inc. Active Through Hole DO-204AH, DO-35, Axial DO-35 Small Signal =< 200mA (Io), Any Speed 100 V Standard 200mA 1 V @ 20 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns 175°C (Max) —
1N914A

DIODE GEN PURP 100V 200MA DO35

onsemi Obsolete Through Hole DO-204AH, DO-35, Axial DO-35 Small Signal =< 200mA (Io), Any Speed 100 V Standard 200mA 1 V @ 20 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns 175°C (Max) —
1N914A-TP

DIODE 500MW HIGH SPEED DO-35

Micro Commercial Components (MCC) Obsolete Through Hole DO-204AH, DO-35, Axial DO-35 Small Signal =< 200mA (Io), Any Speed 100 V Standard 200mA 1 V @ 20 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns -55°C ~ 150°C ✓
1N914A_T50R

DIODE GEN PURP 100V 200MA DO35

onsemi Obsolete Through Hole DO-204AH, DO-35, Axial DO-35 Small Signal =< 200mA (Io), Any Speed 100 V Standard 200mA 1 V @ 20 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns 175°C (Max) —
1N914ATR

DIODE GEN PURP 100V 200MA DO35

onsemi Active Through Hole DO-204AH, DO-35, Axial DO-35 Small Signal =< 200mA (Io), Any Speed 100 V Standard 200mA 1 V @ 20 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns 175°C (Max) —
1N914B

DIODE GEN PURP 100V 200MA DO35

onsemi Active Through Hole DO-204AH, DO-35, Axial DO-35 Small Signal =< 200mA (Io), Any Speed 100 V Standard 200mA 1 V @ 100 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns -65°C ~ 175°C —
1N914B

DIODE GEN PURP 100V 200MA DO35

NTE Electronics, Inc. Active Through Hole DO-204AH, DO-35, Axial DO-35 Small Signal =< 200mA (Io), Any Speed 100 V Standard 200mA 1 V @ 100 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns -65°C ~ 175°C —
1N914B A0G

DIODE GEN PURP 100V 150MA DO35

Taiwan Semiconductor Active Through Hole DO-204AH, DO-35, Axial DO-35 Small Signal =< 200mA (Io), Any Speed 100 V Standard 150mA 720 mV @ 5 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns -65°C ~ 150°C —
1N914B BK

TRANSISTOR

Central Semiconductor Obsolete Through Hole DO-204AH, DO-35, Axial DO-35 Small Signal =< 200mA (Io), Any Speed 100 V Standard 150mA 1 V @ 100 mA 25 nA @ 20 V 4pF @ 0V, 1MHz 4 ns -65°C ~ 200°C —
1N914B BK TIN/LEAD

THROUGH-HOLE-DIODE-SWITCH

Central Semiconductor Obsolete Through Hole DO-204AH, DO-35, Axial DO-35 Small Signal =< 200mA (Io), Any Speed 100 V Standard 150mA 1 V @ 20 mA 25 nA @ 20 V 4pF @ 0V, 1MHz 4 ns -65°C ~ 200°C —
1N914B TR

TRANSISTOR

Central Semiconductor Obsolete Through Hole DO-204AH, DO-35, Axial DO-35 Small Signal =< 200mA (Io), Any Speed 100 V Standard 150mA 1 V @ 100 mA 25 nA @ 20 V 4pF @ 0V, 1MHz 4 ns -65°C ~ 200°C —
1N914B,113

DIODE GEN PURP 100V 200MA ALF2

NXP Semiconductors Obsolete Through Hole DO-204AH, DO-35, Axial ALF2 Small Signal =< 200mA (Io), Any Speed 100 V Standard 200mA 1 V @ 100 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns 175°C (Max) ✓
1N914B-TP

DIODE GEN PURP 100V 200MA DO35

Micro Commercial Components (MCC) Obsolete Through Hole DO-204AH, DO-35, Axial DO-35 Small Signal =< 200mA (Io), Any Speed 100 V Standard 200mA 1 V @ 100 mA 5 µA @ 75 V — 4 ns -55°C ~ 150°C ✓
1N914B_NL

DIODE ZENER

Rochester Electronics Active Through Hole DO-204AH, DO-35, Axial DO-35 (DO-204AH) Small Signal =< 200mA (Io), Any Speed 100 V Standard 200mA 1 V @ 100 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns -55°C ~ 175°C —
1N914B_S00Z

DIODE GEN PURP 100V 200MA DO35

onsemi Obsolete Through Hole DO-204AH, DO-35, Axial DO-35 Small Signal =< 200mA (Io), Any Speed 100 V Standard 200mA 1 V @ 100 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns -55°C ~ 175°C —
1N914B_S62Z

DIODE GEN PURP 100V 200MA DO35

onsemi Obsolete Through Hole DO-204AH, DO-35, Axial DO-35 Small Signal =< 200mA (Io), Any Speed 100 V Standard 200mA 1 V @ 100 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns -55°C ~ 175°C —
1N914B_T50A

DIODE GEN PURP 100V 200MA DO35

onsemi Obsolete Through Hole DO-204AH, DO-35, Axial DO-35 Small Signal =< 200mA (Io), Any Speed 100 V Standard 200mA 1 V @ 100 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns 175°C (Max) —
1N914B_T50R

DIODE GEN PURP 100V 200MA DO35

onsemi Obsolete Through Hole DO-204AH, DO-35, Axial DO-35 Small Signal =< 200mA (Io), Any Speed 100 V Standard 200mA 1 V @ 100 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns 175°C (Max) —
1N914BTR

DIODE GEN PURP 100V 200MA DO35

onsemi Active Through Hole DO-204AH, DO-35, Axial DO-35 Small Signal =< 200mA (Io), Any Speed 100 V Standard 200mA 1 V @ 100 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns -65°C ~ 175°C —
1N914BTR_S00Z

DIODE GEN PURP 100V 200MA DO35

onsemi Obsolete Through Hole DO-204AH, DO-35, Axial DO-35 Small Signal =< 200mA (Io), Any Speed 100 V Standard 200mA 1 V @ 100 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns -55°C ~ 175°C —
1N914BW RHG

DIODE GEN PURP 75V 150MA SOD123F

Taiwan Semiconductor Active Surface Mount SOD-123F SOD-123F Small Signal =< 200mA (Io), Any Speed 75 V Standard 150mA (DC) 1 V @ 100 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns -65°C ~ 150°C —
1N914BWS

DIODE GEN PURP 75V 150MA SOD323F

onsemi Active Surface Mount SC-90, SOD-323F SOD-323F Small Signal =< 200mA (Io), Any Speed 75 V Standard 150mA 1 V @ 100 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns 150°C (Max) —
1N914BWS

RECTIFIER DIODE, 0.15A, 100V

Rochester Electronics Active Surface Mount SC-90, SOD-323F SOD-323F Small Signal =< 200mA (Io), Any Speed 75 V Standard 150mA 1 V @ 100 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns 150°C (Max) —
1N914BWS RRG

DIODE GEN PURP 100V 150MA SOD323

Taiwan Semiconductor Active Surface Mount SC-90, SOD-323F SOD-323F Small Signal =< 200mA (Io), Any Speed 100 V Standard 150mA 1 V @ 100 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns -65°C ~ 150°C —
1N914BWT

DIODE GEN PURP 75V 200MA SOD523F

onsemi Active Surface Mount SC-79, SOD-523F SOD-523F Small Signal =< 200mA (Io), Any Speed 75 V Standard 200mA 1 V @ 100 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns -55°C ~ 150°C —
1N914BWT

RECTIFIER DIODE, 0.3A, 75V

Rochester Electronics Active Surface Mount SC-79, SOD-523F SOD-523F Small Signal =< 200mA (Io), Any Speed 75 V Standard 200mA 1 V @ 100 mA 5 µA @ 75 V 4pF @ 0V, 1MHz 4 ns -55°C ~ 150°C —

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