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Komponentler
10,000 sonuç · Sayfa 199/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYV26EGP-E3/54
DIODE GEN PURP 1KV 1A DO204AC |
Vishay | Active | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 1A | 2.5 V @ 1 A | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | 75 ns | -65°C ~ 175°C | ✓ |
|
BYV26EGP-E3/73
DIODE AVALANCHE 1000V 1A DO204AC |
Vishay | Active | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Avalanche | 1A | 2.5 V @ 1 A | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | 75 ns | -65°C ~ 175°C | ✓ |
|
BYV26EGPHE3/54
DIODE GEN PURP 1KV 1A DO204AC |
Vishay | Obsolete | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 1A | 2.5 V @ 1 A | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | 75 ns | -65°C ~ 175°C | ✓ |
|
BYV26EGPHE3/73
DIODE GEN PURP 1KV 1A DO204AC |
Vishay | Obsolete | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 1A | 2.5 V @ 1 A | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | 75 ns | -65°C ~ 175°C | ✓ |
|
BYV27-050-TAP
DIODE AVALANCHE 55V 2A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 55 V | Avalanche | 2A | 1.07 V @ 3 A | 1 µA @ 55 V | — | 25 ns | -55°C ~ 175°C | ✓ |
|
BYV27-050-TR
DIODE AVALANCHE 55V 2A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 55 V | Avalanche | 2A | 1.07 V @ 3 A | 1 µA @ 55 V | — | 25 ns | -55°C ~ 175°C | ✓ |
|
BYV27-100-TAP
DIODE AVALANCHE 100V 2A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Avalanche | 2A | 1.07 V @ 3 A | 1 µA @ 100 V | — | 25 ns | -55°C ~ 175°C | — |
|
BYV27-100-TR
DIODE AVALANCHE 100V 2A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Avalanche | 2A | 1.07 V @ 3 A | 1 µA @ 100 V | — | 25 ns | -55°C ~ 175°C | — |
|
BYV27-150-TAP
DIODE AVALANCHE 165V 2A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 165 V | Avalanche | 2A | 1.07 V @ 3 A | 1 µA @ 165 V | — | 25 ns | -55°C ~ 175°C | — |
|
BYV27-150-TR
DIODE AVALANCHE 165V 2A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 165 V | Avalanche | 2A | 1.07 V @ 3 A | 1 µA @ 165 V | — | 25 ns | -55°C ~ 175°C | ✓ |
|
BYV27-200-TAP
DIODE AVALANCHE 200V 2A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Avalanche | 2A | 1.07 V @ 3 A | 1 µA @ 200 V | — | 25 ns | -55°C ~ 175°C | ✓ |
|
BYV27-200-TR
DIODE AVALANCHE 200V 2A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Avalanche | 2A | 1.07 V @ 3 A | 1 µA @ 200 V | — | 25 ns | -55°C ~ 175°C | ✓ |
|
BYV27-600-TAP
DIODE AVALANCHE 600V 2A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Avalanche | 2A | 1.35 V @ 3 A | 5 µA @ 600 V | — | 250 ns | -55°C ~ 175°C | ✓ |
|
BYV27-600-TR
DIODE AVALANCHE 600V 2A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Avalanche | 2A | 1.35 V @ 3 A | 5 µA @ 600 V | — | 250 ns | -55°C ~ 175°C | ✓ |
|
BYV28-050-TAP
DIODE AVALANCHE 50V 3.5A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Avalanche | 3.5A | 1.1 V @ 5 A | 1 µA @ 50 V | — | 30 ns | -55°C ~ 175°C | ✓ |
|
BYV28-050-TR
DIODE AVALANCHE 50V 3.5A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Avalanche | 3.5A | 1.1 V @ 5 A | 1 µA @ 50 V | — | 30 ns | -55°C ~ 175°C | ✓ |
|
BYV28-100-TAP
DIODE AVALANCHE 100V 3.5A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Avalanche | 3.5A | 1.1 V @ 5 A | 1 µA @ 100 V | — | 30 ns | -55°C ~ 175°C | ✓ |
|
BYV28-100-TR
DIODE AVALANCHE 100V 3.5A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Avalanche | 3.5A | 1.1 V @ 5 A | 1 µA @ 100 V | — | 30 ns | -55°C ~ 175°C | ✓ |
|
BYV28-150-TAP
DIODE AVALANCHE 150V 3.5A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Avalanche | 3.5A | 1.1 V @ 5 A | 1 µA @ 150 V | — | 30 ns | -55°C ~ 175°C | — |
|
BYV28-150-TR
DIODE AVALANCHE 150V 3.5A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Avalanche | 3.5A | 1.1 V @ 5 A | 1 µA @ 150 V | — | 30 ns | -55°C ~ 175°C | — |
|
BYV28-200-RAS15-10
DIODE AVALANCHE 200V 3.5A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Avalanche | 3.5A | 1.1 V @ 5 A | 1 µA @ 200 V | — | 30 ns | -55°C ~ 175°C | ✓ |
|
BYV28-200-TAP
DIODE AVALANCHE 200V 3.5A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Avalanche | 3.5A | 1.1 V @ 5 A | 1 µA @ 200 V | — | 30 ns | -55°C ~ 175°C | ✓ |
|
BYV28-200-TR
DIODE AVALANCHE 200V 3.5A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Avalanche | 3.5A | 1.1 V @ 5 A | 1 µA @ 200 V | — | 30 ns | -55°C ~ 175°C | — |
|
BYV28-600-TAP
DIODE AVALANCHE 600V 3.5A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Avalanche | 3.5A | 1.35 V @ 5 A | 5 µA @ 600 V | — | 210 ns | -55°C ~ 175°C | ✓ |
|
BYV28-600-TR
DIODE AVALANCHE 600V 3.5A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Avalanche | 3.5A | 1.35 V @ 5 A | 5 µA @ 600 V | — | 50 ns | -55°C ~ 175°C | ✓ |
|
BYV29-300-E3/45
DIODE GEN PURP 300V 8A TO220AC |
Vishay | Active | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 300 V | Standard | 8A | 1.25 V @ 8 A | 10 µA @ 300 V | — | 50 ns | -40°C ~ 150°C | — |
|
BYV29-300HE3/45
DIODE GEN PURP 300V 8A TO220AC |
Vishay | Obsolete | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 300 V | Standard | 8A | 1.25 V @ 8 A | 10 µA @ 300 V | — | 50 ns | -40°C ~ 150°C | — |
|
BYV29-400,127
DIODE GEN PURP 400V 9A TO220AC |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 9A | 1.25 V @ 8 A | 50 µA @ 400 V | — | 60 ns | 150°C (Max) | — |
|
BYV29-400-E3/45
DIODE GEN PURP 400V 8A TO220AC |
Vishay | Active | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 8A | 1.25 V @ 8 A | 10 µA @ 400 V | — | 50 ns | -40°C ~ 150°C | — |
|
BYV29-400HE3/45
DIODE GEN PURP 400V 8A TO220AC |
Vishay | Obsolete | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 8A | 1.25 V @ 8 A | 10 µA @ 400 V | — | 50 ns | -40°C ~ 150°C | — |
|
BYV29-500,127
DIODE GEN PURP 500V 9A TO220AC |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 500 V | Standard | 9A | 1.25 V @ 8 A | 50 µA @ 500 V | — | 60 ns | 150°C (Max) | — |
|
BYV29-600,127
DIODE GEN PURP 600V 9A TO220AC |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 9A | 1.25 V @ 8 A | 50 µA @ 600 V | — | 60 ns | 150°C (Max) | — |
|
BYV29-600PQ
DIODE GEN PURP 600V 9A TO220AB |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-220-3 | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 9A | 1.3 V @ 8 A | 10 µA @ 600 V | — | 75 ns | 175°C (Max) | — |
|
BYV29B-300-E3/81
DIODE GEN PURP 300V 8A TO263AB |
Vishay | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 300 V | Standard | 8A | 1.25 V @ 8 A | 10 µA @ 300 V | — | 50 ns | -40°C ~ 150°C | — |
|
BYV29B-300HE3_A/I
DIODE GEN PURP 300V 8A TO263AB |
Vishay | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 300 V | Standard | 8A | 1.25 V @ 8 A | 10 µA @ 300 V | — | 50 ns | -40°C ~ 150°C | — |
|
BYV29B-300HE3_A/P
DIODE GEN PURP 300V 8A TO263AB |
Vishay | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 300 V | Standard | 8A | 1.25 V @ 8 A | 10 µA @ 300 V | — | 50 ns | -40°C ~ 150°C | — |
|
BYV29B-400-E3/81
DIODE GEN PURP 400V 8A TO263AB |
Vishay | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 8A | 1.25 V @ 8 A | 10 µA @ 400 V | — | 50 ns | -40°C ~ 150°C | — |
|
BYV29B-400HE3_A/I
DIODE GEN PURP 400V 8A TO263AB |
Vishay | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 8A | 1.25 V @ 8 A | 10 µA @ 400 V | — | 50 ns | -40°C ~ 150°C | — |
|
BYV29B-400HE3_A/P
DIODE GEN PURP 400V 8A TO263AB |
Vishay | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 8A | 1.25 V @ 8 A | 10 µA @ 400 V | — | 50 ns | -40°C ~ 150°C | — |
|
BYV29B-500,118
DIODE GEN PURP 500V 9A D2PAK |
WeEn Semiconductors Co., Ltd | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Fast Recovery =< 500ns, > 200mA (Io) | 500 V | Standard | 9A | 1.25 V @ 8 A | 50 µA @ 500 V | — | 60 ns | 150°C (Max) | — |
|
BYV29B-600,118
DIODE GEN PURP 600V 9A D2PAK |
WeEn Semiconductors Co., Ltd | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 9A | 1.25 V @ 8 A | 50 µA @ 600 V | — | 60 ns | 150°C (Max) | — |
|
BYV29B-600PJ
DIODE GEN PURP 600V 9A D2PAK |
WeEn Semiconductors Co., Ltd | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 9A | 1.3 V @ 8 A | 10 µA @ 600 V | — | 75 ns | 175°C (Max) | — |
|
BYV29D-600PJ
DIODE GEN PURP 600V 9A DPAK |
WeEn Semiconductors Co., Ltd | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 9A | 1.3 V @ 8 A | 10 µA @ 600 V | — | 75 ns | 175°C (Max) | — |
|
BYV29F-300-E3/45
DIODE GEN PURP 300V 8A ITO220AC |
Vishay | Active | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 300 V | Standard | 8A | 1.25 V @ 8 A | 10 µA @ 300 V | — | 50 ns | -40°C ~ 150°C | — |
|
BYV29F-300HE3_A/P
DIODE GEN PURP 300V 8A ITO220AC |
Vishay | Active | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 300 V | Standard | 8A | 1.25 V @ 8 A | 10 µA @ 300 V | — | 50 ns | -40°C ~ 150°C | — |
|
BYV29F-400-E3/45
DIODE GEN PURP 400V 8A ITO220AC |
Vishay | Active | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 8A | 1.25 V @ 8 A | 10 µA @ 400 V | — | 50 ns | -40°C ~ 150°C | — |
|
BYV29F-400HE3_A/P
DIODE GEN PURP 400V 8A ITO220AC |
Vishay | Active | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 8A | 1.25 V @ 8 A | 10 µA @ 400 V | — | 50 ns | -40°C ~ 150°C | — |
|
BYV29F-600,127
NOW WEEN - BYV29F-600 - ULTRAFAS |
Rochester Electronics | Active | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 9A | 1.9 V @ 8 A | 50 µA @ 600 V | — | 35 ns | 150°C (Max) | — |
|
BYV29F-600,127
DIODE GEN PURP 600V 9A TO220AC |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 9A | 1.9 V @ 8 A | 50 µA @ 600 V | — | 35 ns | 150°C (Max) | — |
|
BYV29FB-600,118
DIODE GEN PURP 600V 9A D2PAK |
WeEn Semiconductors Co., Ltd | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 9A | 1.9 V @ 8 A | 50 µA @ 600 V | — | 35 ns | 150°C (Max) | — |