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Komponentler
10,000 sonuç · Sayfa 200/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYV29FD-600,118
NOW WEEN - BYV29FD-600 - ULTRAFA |
Rochester Electronics | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 9A | 1.9 V @ 8 A | 50 µA @ 600 V | — | 35 ns | 150°C (Max) | — |
|
BYV29FD-600,118
DIODE GEN PURP 600V 9A DPAK |
WeEn Semiconductors Co., Ltd | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 9A | 1.9 V @ 8 A | 50 µA @ 600 V | — | 35 ns | 150°C (Max) | — |
|
BYV29FX-600,127
DIODE GEN PURP 600V 9A TO220FP |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 9A | 1.9 V @ 8 A | 50 µA @ 600 V | — | 35 ns | 150°C (Max) | — |
|
BYV29G-600,127
DIODE GEN PURP 600V 9A I2PAK |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 9A | 1.25 V @ 8 A | 50 µA @ 600 V | — | 60 ns | 150°C (Max) | — |
|
BYV29G-600PQ
DIODE GEN PURP 600V 9A I2PAK |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 9A | 1.3 V @ 8 A | 10 µA @ 600 V | — | 75 ns | 175°C (Max) | — |
|
BYV29X-500,127
DIODE GEN PURP 500V 9A TO220FP |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | Fast Recovery =< 500ns, > 200mA (Io) | 500 V | Standard | 9A | 1.25 V @ 8 A | 50 µA @ 500 V | — | 60 ns | 150°C (Max) | — |
|
BYV29X-600,127
DIODE GEN PURP 600V 9A TO220FP |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 9A | 1.26 V @ 8 A | 50 µA @ 600 V | — | 60 ns | 150°C (Max) | — |
|
BYV29X-600AQ
DIODE GEN PURP TO220F |
WeEn Semiconductors Co., Ltd | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BYV29X-600PQ
DIODE GEN PURP 600V 9A TO220F |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-220-2 Full Pack | TO-220F | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 9A | 1.3 V @ 8 A | 10 µA @ 600 V | — | 75 ns | 175°C (Max) | — |
|
BYV30-600PQ
DIODE GEN PURP 600V 30A TO220AC |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 30A | 1.55 V @ 30 A | 10 µA @ 600 V | — | 75 ns | 175°C (Max) | — |
|
BYV30B-600PJ
DIODE GEN PURP 600V 30A D2PAK |
WeEn Semiconductors Co., Ltd | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 30A | 1.55 V @ 30 A | 10 µA @ 600 V | — | 75 ns | 175°C (Max) | — |
|
BYV30JT-600PQ
DIODE GEN PURP 600V 30A TO-3P |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-3P-3, SC-65-3 | TO-3P | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 30A | 1.8 V @ 30 A | 10 µA @ 600 V | — | 65 ns | 175°C (Max) | — |
|
BYV30W-600PQ
DIODE GEN PURP 600V 30A TO247-2 |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-247-2 | TO-247-2 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 30A | 1.55 V @ 30 A | 10 µA @ 600 V | — | 75 ns | 175°C (Max) | — |
|
BYV30X-600PQ
DIODE GEN PURP 600V 30A TO220F |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 30A | 1.55 V @ 30 A | 10 µA @ 600 V | — | 75 ns | 175°C (Max) | — |
|
BYV37-TAP
DIODE AVALANCHE 800V 2A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Avalanche | 2A | 1.1 V @ 1 A | 5 µA @ 800 V | — | 300 ns | -55°C ~ 175°C | ✓ |
|
BYV37-TR
DIODE AVALANCHE 800V 2A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Avalanche | 2A | 1.1 V @ 1 A | 5 µA @ 800 V | — | 300 ns | -55°C ~ 175°C | ✓ |
|
BYV38-TAP
DIODE AVALANCHE 1KV 2A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Avalanche | 2A | 1.1 V @ 1 A | 5 µA @ 1000 V | — | 300 ns | -55°C ~ 175°C | — |
|
BYV38-TR
DIODE AVALANCHE 1KV 2A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Avalanche | 2A | 1.1 V @ 1 A | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | 300 ns | -55°C ~ 175°C | ✓ |
|
BYV40W-600PQ
BYV40W-600PQ/TO247/STANDARD MARK |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-247-2 | TO-247-2 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 40A | 1.6 V @ 40 A | 10 µA @ 600 V | — | 79 ns | 175°C (Max) | — |
|
BYV415K-600PQ127
ULTRAFAST RECTIFIER DIODE |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BYV415W-600P127
ULTRAFAST RECTIFIER DIODE TO 24 |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BYV60W-600PQ
DIODE GEN PURP 600V 60A TO247-2 |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-247-2 | TO-247-2 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 60A | 2 V @ 60 A | 10 µA @ 600 V | — | 55 ns | 175°C (Max) | — |
|
BYV79E-200,127
DIODE GEN PURP 200V 14A TO220AC |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 14A | 1.05 V @ 14 A | 50 µA @ 200 V | — | 30 ns | 150°C (Max) | — |
|
BYV95-1-EBT1111TAP
DIODE AVALANCHE 700V SOD57 |
Vishay | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BYV95-2-EBT1133TAP
DIODE AVALANCHE 700V SOD57 |
Vishay | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BYV95-3-EBT1124TAP
DIODE AVALANCHE 850V SOD57 |
Vishay | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BYV96E T/R
DIODE AVALANCHE 1000V 1.5A DO15 |
EIC Semiconductor, Inc. | Active | Through Hole | DO-204AC, DO-15, Axial | DO-15 | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Avalanche | 1.5A | 1.6 V @ 1.5 A | 5 µA @ 1000 V | — | 300 ns | 175°C | ✓ |
|
BYV98-100-TAP
DIODE AVALANCHE 100V 4A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Avalanche | 4A | 1.1 V @ 5 A | 10 µA @ 100 V | — | 35 ns | -55°C ~ 175°C | ✓ |
|
BYV98-100-TR
DIODE AVALANCHE 100V 4A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Avalanche | 4A | 1.1 V @ 5 A | 10 µA @ 100 V | — | 35 ns | -55°C ~ 175°C | ✓ |
|
BYV98-150-TAP
DIODE AVALANCHE 150V 4A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Avalanche | 4A | 1.1 V @ 5 A | 10 µA @ 150 V | — | 35 ns | -55°C ~ 175°C | ✓ |
|
BYV98-150-TR
DIODE AVALANCHE 150V 4A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Avalanche | 4A | 1.1 V @ 5 A | 10 µA @ 150 V | — | 35 ns | -55°C ~ 175°C | ✓ |
|
BYV98-200-TAP
DIODE AVALANCHE 200V 4A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Avalanche | 4A | 1.1 V @ 5 A | 10 µA @ 200 V | — | 35 ns | -55°C ~ 175°C | ✓ |
|
BYV98-200-TR
DIODE AVALANCHE 200V 4A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Avalanche | 4A | 1.1 V @ 5 A | 10 µA @ 200 V | — | 35 ns | -55°C ~ 175°C | — |
|
BYV98-50-TAP
DIODE AVALANCHE 50V 4A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Avalanche | 4A | 1.1 V @ 5 A | 10 µA @ 50 V | — | 35 ns | -55°C ~ 175°C | ✓ |
|
BYV98-50-TR
DIODE AVALANCHE 50V 4A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Avalanche | 4A | 1.1 V @ 5 A | 10 µA @ 50 V | — | 35 ns | -55°C ~ 175°C | ✓ |
|
BYW100-200
DIODE GEN PURP 200V 1.5A DO15 |
STMicroelectronics | Obsolete | Through Hole | DO-204AC, DO-15, Axial | DO-15 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1.5A | 1.2 V @ 4.5 A | 10 µA @ 200 V | — | 35 ns | 150°C (Max) | ✓ |
|
BYW100-200RL
DIODE GEN PURP 200V 1.5A DO15 |
STMicroelectronics | Obsolete | Through Hole | DO-204AC, DO-15, Axial | DO-15 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1.5A | 1.2 V @ 4.5 A | 10 µA @ 200 V | — | 35 ns | 150°C (Max) | — |
|
BYW172D-TAP
DIODE AVALANCHE 200V 3A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Avalanche | 3A | 1.5 V @ 9 A | 1 µA @ 200 V | — | 100 ns | -55°C ~ 175°C | ✓ |
|
BYW172D-TR
DIODE AVALANCHE 200V 3A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Avalanche | 3A | 1.5 V @ 9 A | 1 µA @ 200 V | — | 100 ns | -55°C ~ 175°C | ✓ |
|
BYW172F-TAP
DIODE AVALANCHE 300V 3A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 300 V | Avalanche | 3A | 1.5 V @ 9 A | 1 µA @ 300 V | — | 100 ns | -55°C ~ 175°C | ✓ |
|
BYW172F-TR
DIODE AVALANCHE 300V 3A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 300 V | Avalanche | 3A | 1.5 V @ 9 A | 1 µA @ 300 V | — | 100 ns | -55°C ~ 175°C | ✓ |
|
BYW172G-TAP
DIODE AVALANCHE 400V 3A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Avalanche | 3A | 1.5 V @ 9 A | 1 µA @ 400 V | — | 100 ns | -55°C ~ 175°C | ✓ |
|
BYW172G-TR
DIODE AVALANCHE 400V 3A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Avalanche | 3A | 1.5 V @ 9 A | 1 µA @ 400 V | — | 100 ns | -55°C ~ 175°C | ✓ |
|
BYW178-TAP
DIODE AVALANCHE 800V 3A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Avalanche | 3A | 1.9 V @ 3 A | 1 µA @ 800 V | — | 60 ns | -55°C ~ 175°C | ✓ |
|
BYW178-TR
DIODE AVALANCHE 800V 3A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Avalanche | 3A | 1.9 V @ 3 A | 1 µA @ 800 V | — | 60 ns | -55°C ~ 175°C | — |
|
BYW27-100
DIODE STD DO-41 100V 1A |
Diotec Semiconductor | Active | Through Hole | DO-204AC, DO-41, Axial | DO-41/DO-204AC | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.3 V @ 1 A | 200 nA @ 100 V | — | 1.5 µs | -50°C ~ 175°C | — |
|
BYW27-100
ST Rect, 100V, 1A |
DComponents | Active | Through Hole | DO-204AC, DO-41, Axial | DO-41/DO-204AC | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.3 V @ 1 A | 200 nA @ 100 V | — | 1.5 µs | -50°C ~ 175°C | ✓ |
|
BYW27-100-CT
CUT-TAPE VERSION. STANDARD RECO |
DComponents | Active | Through Hole | DO-204AC, DO-41, Axial | DO-41/DO-204AC | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.3 V @ 1 A | 200 nA @ 100 V | — | 1.5 µs | -50°C ~ 175°C | ✓ |
|
BYW27-1000
DIODE STD DO-41 1000V 1A |
Diotec Semiconductor | Active | Through Hole | DO-204AC, DO-41, Axial | DO-41/DO-204AC | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.3 V @ 1 A | 200 nA @ 1000 V | — | 1.5 µs | -50°C ~ 175°C | — |
|
BYW27-1000
ST Rect, 1000V, 1A |
DComponents | Active | Through Hole | DO-204AC, DO-41, Axial | DO-41/DO-204AC | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.3 V @ 1 A | 200 nA @ 1000 V | — | 1.5 µs | -50°C ~ 175°C | ✓ |