Diyotlar - Doğrultucular - Tekil
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Komponentler
10,000 sonuç · Sayfa 196/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYS12-90HE3_A/I
DIODE SCHOTTKY 90V 1.5A DO214AC |
Vishay | Active | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 90 V | Schottky | 1.5A | 750 mV @ 1 A | 100 µA @ 90 V | — | — | -55°C ~ 150°C | ✓ |
|
BYS459-1500-E3/45
DIODE GEN PURP 1.5KV 6.5A TO220 |
Vishay | Obsolete | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 1500 V | Standard | 6.5A | 1.3 V @ 6.5 A | 250 µA @ 1500 V | — | 350 ns | -55°C ~ 150°C | ✓ |
|
BYS459-1500SE3/45
DIODE GEN PURP 1.5KV 10A TO220AC |
Vishay | Obsolete | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 1500 V | Standard | 10A | 1.35 V @ 6.5 A | 250 µA @ 1500 V | — | 220 ns | -55°C ~ 150°C | ✓ |
|
BYS459B-1500E3/45
DIODE GEN PURP 1.5KV 6.5A TO263 |
Vishay | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 1500 V | Standard | 6.5A | 1.3 V @ 6.5 A | 250 µA @ 1500 V | — | 350 ns | -55°C ~ 150°C | ✓ |
|
BYS459B-1500E3/81
DIODE GEN PURP 1.5KV 6.5A TO263 |
Vishay | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 1500 V | Standard | 6.5A | 1.3 V @ 6.5 A | 250 µA @ 1500 V | — | 350 ns | -55°C ~ 150°C | ✓ |
|
BYS459B-1500SE3/45
DIODE GEN PURP 1.5KV 10A TO263AB |
Vishay | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 1500 V | Standard | 10A | 1.35 V @ 6.5 A | 250 µA @ 1500 V | — | 220 ns | -55°C ~ 150°C | ✓ |
|
BYS459B-1500SE3/81
DIODE GEN PURP 1.5KV 10A TO263AB |
Vishay | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 1500 V | Standard | 10A | 1.35 V @ 6.5 A | 250 µA @ 1500 V | — | 220 ns | -55°C ~ 150°C | ✓ |
|
BYS459F-1500E3/45
DIODE GEN PURP 1.5KV 6.5A ITO220 |
Vishay | Obsolete | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 1500 V | Standard | 6.5A | 1.3 V @ 6.5 A | 250 µA @ 1500 V | — | 350 ns | -55°C ~ 150°C | ✓ |
|
BYS459F-1500SE3/45
DIODE GEN PURP 1.5KV 10A ITO220 |
Vishay | Obsolete | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 1500 V | Standard | 10A | 1.35 V @ 6.5 A | 250 µA @ 1500 V | — | 220 ns | -55°C ~ 150°C | ✓ |
|
BYT01-400
DIODE GEN PURP 400V 1A DO15 |
STMicroelectronics | Obsolete | Through Hole | DO-204AC, DO-15, Axial | DO-15 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.5 V @ 1 A | 20 µA @ 400 V | — | 55 ns | -40°C ~ 150°C | — |
|
BYT01-400RL
DIODE GEN PURP 400V 1A DO15 |
STMicroelectronics | Obsolete | Through Hole | DO-204AC, DO-15, Axial | DO-15 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.5 V @ 1 A | 20 µA @ 400 V | — | 55 ns | -40°C ~ 150°C | — |
|
BYT03-400
DIODE GEN PURP 400V 3A DO201AD |
STMicroelectronics | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 3A | 1.5 V @ 3 A | 20 µA @ 400 V | — | 55 ns | 150°C (Max) | — |
|
BYT03-400RL
DIODE GEN PURP 400V 3A DO201AD |
STMicroelectronics | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 3A | 1.5 V @ 3 A | 20 µA @ 400 V | — | 55 ns | 150°C (Max) | — |
|
BYT08P-1000
DIODE GEN PURP 1KV 8A TO220AC |
STMicroelectronics | Obsolete | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 8A | 1.9 V @ 8 A | 35 µA @ 1000 V | — | 155 ns | -40°C ~ 150°C | — |
|
BYT08P-400
DIODE GEN PURP 400V 8A TO220AC |
STMicroelectronics | Obsolete | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 8A | 1.5 V @ 8 A | 15 µA @ 400 V | — | 75 ns | 150°C (Max) | — |
|
BYT08PI-400RG
DIODE GEN PURP 400V 8A TO220AC |
STMicroelectronics | Obsolete | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 8A | 1.5 V @ 8 A | 15 µA @ 400 V | — | 75 ns | 150°C (Max) | — |
|
BYT12P-1000
DIODE GEN PURP 1KV 12A TO220AC |
STMicroelectronics | Obsolete | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 12A | 1.9 V @ 12 A | 50 µA @ 1000 V | — | 155 ns | -40°C ~ 150°C | — |
|
BYT12PI-1000
DIODE GEN PURP 1KV 12A TO220AC |
STMicroelectronics | Obsolete | Through Hole | TO-220-2 Isolated Tab | TO220AC Isolated | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 12A | 1.9 V @ 12 A | 50 µA @ 1000 V | — | 155 ns | -40°C ~ 150°C | — |
|
BYT12PI-1000RG
DIODE GEN PURP 1KV 12A TO220AC |
STMicroelectronics | Obsolete | Through Hole | TO-220-2 Isolated Tab | TO220AC Isolated | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 12A | 1.9 V @ 12 A | 50 µA @ 1000 V | — | 155 ns | -40°C ~ 150°C | ✓ |
|
BYT30G-400
DIODE GEN PURP 400V 30A D2PAK |
STMicroelectronics | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 30A | 1.5 V @ 30 A | 35 µA @ 400 V | — | 100 ns | -40°C ~ 150°C | — |
|
BYT30G-400-TR
DIODE GEN PURP 400V 30A D2PAK |
STMicroelectronics | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 30A | 1.5 V @ 30 A | 35 µA @ 400 V | — | 100 ns | -40°C ~ 150°C | — |
|
BYT30P-1000
DIODE GEN PURP 1KV 30A SOD93-2 |
STMicroelectronics | Obsolete | Through Hole | SOD-93-2 | SOD-93-2 | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 30A | 1.9 V @ 30 A | 100 µA @ 1000 V | — | 165 ns | -40°C ~ 150°C | — |
|
BYT30P-400
DIODE GEN PURP 400V 30A SOD93-2 |
STMicroelectronics | Obsolete | Through Hole | SOD-93-2 | SOD-93-2 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 30A | 1.5 V @ 30 A | 35 µA @ 400 V | — | 100 ns | -40°C ~ 150°C | — |
|
BYT30PI-1000
DIODE GEN PURP 1KV 30A DOP3I |
STMicroelectronics | Obsolete | Through Hole | DOP3I-2 Insulated (Straight Leads) | DOP3I | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 30A | 1.9 V @ 30 A | 100 µA @ 1000 V | — | 165 ns | -40°C ~ 150°C | — |
|
BYT30PI-1000RG
DIODE GEN PURP 1KV 30A DOP3I |
STMicroelectronics | Obsolete | Through Hole | DOP3I-2 Insulated (Straight Leads) | DOP3I | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 30A | 1.9 V @ 30 A | 100 µA @ 1000 V | — | 165 ns | -40°C ~ 150°C | — |
|
BYT30PI-400RG
DIODE GEN PURP 400V 30A DOP3I |
STMicroelectronics | Obsolete | Through Hole | DOP3I-2 Insulated (Straight Leads) | DOP3I | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 30A | 1.5 V @ 30 A | 35 µA @ 400 V | — | 100 ns | -40°C ~ 150°C | ✓ |
|
BYT51A-TAP
DIODE AVALANCHE 50V 1.5A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Standard Recovery >500ns, > 200mA (Io) | 50 V | Avalanche | 1.5A | 1.1 V @ 1 A | 1 µA @ 50 V | — | 4 µs | -55°C ~ 175°C | ✓ |
|
BYT51A-TR
DIODE AVALANCHE 50V 1.5A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Standard Recovery >500ns, > 200mA (Io) | 50 V | Avalanche | 1.5A | 1.1 V @ 1 A | 1 µA @ 50 V | — | 4 µs | -55°C ~ 175°C | ✓ |
|
BYT51B-TAP
DIODE AVALANCHE 100V 1.5A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Standard Recovery >500ns, > 200mA (Io) | 100 V | Avalanche | 1.5A | 1.1 V @ 1 A | 1 µA @ 100 V | — | 4 µs | -55°C ~ 175°C | ✓ |
|
BYT51B-TR
DIODE AVALANCHE 100V 1.5A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Standard Recovery >500ns, > 200mA (Io) | 100 V | Avalanche | 1.5A | 1.1 V @ 1 A | 1 µA @ 100 V | — | 4 µs | -55°C ~ 175°C | ✓ |
|
BYT51D-TAP
DIODE AVALANCHE 200V 1.5A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Avalanche | 1.5A | 1.1 V @ 1 A | 1 µA @ 200 V | — | 4 µs | -55°C ~ 175°C | ✓ |
|
BYT51D-TR
DIODE AVALANCHE 200V 1.5A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Avalanche | 1.5A | 1.1 V @ 1 A | 1 µA @ 200 V | — | 4 µs | -55°C ~ 175°C | ✓ |
|
BYT51G-TAP
DIODE AVALANCHE 400V 1.5A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Avalanche | 1.5A | 1.1 V @ 1 A | 1 µA @ 400 V | — | 4 µs | -55°C ~ 175°C | ✓ |
|
BYT51G-TR
DIODE AVALANCHE 400V 1.5A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Avalanche | 1.5A | 1.1 V @ 1 A | 1 µA @ 400 V | — | 4 µs | -55°C ~ 175°C | ✓ |
|
BYT51J-TAP
DIODE AVALANCHE 600V 1.5A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Standard Recovery >500ns, > 200mA (Io) | 600 V | Avalanche | 1.5A | 1.1 V @ 1 A | 1 µA @ 600 V | — | 4 µs | -55°C ~ 175°C | ✓ |
|
BYT51J-TR
DIODE AVALANCHE 600V 1.5A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Standard Recovery >500ns, > 200mA (Io) | 600 V | Avalanche | 1.5A | 1.1 V @ 1 A | 1 µA @ 600 V | — | 4 µs | -55°C ~ 175°C | ✓ |
|
BYT51K-TAP
DIODE AVALANCHE 800V 1.5A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Avalanche | 1.5A | 1.1 V @ 1 A | 1 µA @ 800 V | — | 4 µs | -55°C ~ 175°C | ✓ |
|
BYT51K-TR
DIODE AVALANCHE 800V 1.5A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Avalanche | 1.5A | 1.1 V @ 1 A | 1 µA @ 800 V | — | 4 µs | -55°C ~ 175°C | ✓ |
|
BYT51M-TAP
DIODE AVALANCHE 1KV 1.5A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Avalanche | 1.5A | 1.1 V @ 1 A | 1 µA @ 1000 V | — | 4 µs | -55°C ~ 175°C | ✓ |
|
BYT51M-TR
DIODE AVALANCHE 1KV 1.5A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Avalanche | 1.5A | 1.1 V @ 1 A | 1 µA @ 1000 V | — | 4 µs | -55°C ~ 175°C | ✓ |
|
BYT52A-TAP
DIODE AVALANCHE 50V 1.4A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Avalanche | 1.4A | 1.3 V @ 1 A | 5 µA @ 50 V | — | 200 ns | -55°C ~ 175°C | ✓ |
|
BYT52A-TR
DIODE AVALANCHE 50V 1.4A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Avalanche | 1.4A | 1.3 V @ 1 A | 5 µA @ 50 V | — | 200 ns | -55°C ~ 175°C | ✓ |
|
BYT52B-TAP
DIODE AVALANCHE 100V 1.4A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Avalanche | 1.4A | 1.3 V @ 1 A | 5 µA @ 100 V | — | 200 ns | -55°C ~ 175°C | ✓ |
|
BYT52B-TR
DIODE AVALANCHE 100V 1.4A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Avalanche | 1.4A | 1.3 V @ 1 A | 5 µA @ 100 V | — | 200 ns | -55°C ~ 175°C | ✓ |
|
BYT52D-TAP
DIODE AVALANCHE 200V 1.4A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Avalanche | 1.4A | 1.3 V @ 1 A | 5 µA @ 200 V | — | 200 ns | -55°C ~ 175°C | ✓ |
|
BYT52D-TR
DIODE AVALANCHE 200V 1.4A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Avalanche | 1.4A | 1.3 V @ 1 A | 5 µA @ 200 V | — | 200 ns | -55°C ~ 175°C | ✓ |
|
BYT52G-TAP
DIODE AVALANCHE 400V 1.4A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Avalanche | 1.4A | 1.3 V @ 1 A | 5 µA @ 400 V | — | 200 ns | -55°C ~ 175°C | ✓ |
|
BYT52G-TR
DIODE AVALANCHE 400V 1.4A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Avalanche | 1.4A | 1.3 V @ 1 A | 5 µA @ 400 V | — | 200 ns | -55°C ~ 175°C | ✓ |
|
BYT52J-TAP
DIODE AVALANCHE 600V 1.4A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Avalanche | 1.4A | 1.3 V @ 1 A | 5 µA @ 600 V | — | 200 ns | -55°C ~ 175°C | ✓ |
|
BYT52J-TR
DIODE AVALANCHE 600V 1.4A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Avalanche | 1.4A | 1.3 V @ 1 A | 5 µA @ 600 V | — | 200 ns | -55°C ~ 175°C | — |