Diyotlar - Doğrultucular - Tekil
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Komponentler
10,000 sonuç · Sayfa 198/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYT78-TR
DIODE AVALANCHE 1000V 3A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Avalanche | 3A | 1.2 V @ 3 A | 5 µA @ 1000 V | — | 250 ns | -55°C ~ 175°C | — |
|
BYT79-500,127
DIODE GEN PURP 500V 14A TO220AC |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 500 V | Standard | 14A | 1.38 V @ 30 A | 50 µA @ 500 V | — | 60 ns | 150°C (Max) | — |
|
BYT79-600,127
DIODE GEN PURP 600V 15A TO220AC |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 15A | 1.38 V @ 15 A | 50 µA @ 600 V | — | 60 ns | 150°C (Max) | — |
|
BYT79B-600PJ
DIODE GEN PURP 600V 15A D2PAK |
WeEn Semiconductors Co., Ltd | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 15A | 1.38 V @ 15 A | 10 µA @ 600 V | — | 60 ns | 175°C (Max) | — |
|
BYT79X-600,127
DIODE GEN PURP 600V 15A TO220F |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 15A | 1.38 V @ 15 A | 50 µA @ 600 V | — | 60 ns | 150°C (Max) | — |
|
BYT79X-600PQ
DIODE GEN PURP 600V 15A TO220F |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-220-2 Full Pack | TO-220F | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 15A | 1.38 V @ 15 A | 10 µA @ 600 V | — | 60 ns | 175°C (Max) | — |
|
BYV10-600P127
ULTRAFAST RECTIFIER DIODE TO 22 |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BYV10-600PQ
DIODE GEN PURP 600V 10A TO220AC |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 10A | 2 V @ 10 A | 10 µA @ 600 V | — | 50 ns | 175°C (Max) | — |
|
BYV10-600PQ127
ULTRAFAST RECTIFIER DIODE TO 22 |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BYV10ED-600PJ
DIODE GEN PURP 600V 10A DPAK |
WeEn Semiconductors Co., Ltd | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 10A | 2 V @ 10 A | 10 µA @ 600 V | — | 50 ns | 175°C (Max) | — |
|
BYV10EX-600P127
ULTRAFAST RECTIFIER DIODE TO 22 |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BYV10EX-600PQ
DIODE GEN PURP 600V 10A TO220F |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 10A | 2 V @ 10 A | 10 µA @ 600 V | — | 50 ns | -65°C ~ 175°C | — |
|
BYV10MX-600PQ
ULTRAFAST POWER DIODE IN 2-LEADS |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 10A | 2 V @ 10 A | 10 µA @ 600 V | — | 35 ns | 175°C | — |
|
BYV10X-600P127
NOW WEEN - BYV10X-600P - ULTRAFA |
Rochester Electronics | Active | Through Hole | TO-220-2 Full Pack | TO-220F | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 10A | 2 V @ 10 A | 10 µA @ 600 V | — | 50 ns | 175°C | — |
|
BYV10X-600PQ
DIODE GEN PURP 600V 10A TO220-2 |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 10A | 2 V @ 10 A | 10 µA @ 600 V | — | 20 ns | 175°C (Max) | — |
|
BYV12-TAP
DIODE AVALANCHE 100V 1.5A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Avalanche | 1.5A | 1.5 V @ 1 A | 5 µA @ 100 V | — | 300 ns | -55°C ~ 175°C | ✓ |
|
BYV12-TR
DIODE AVALANCHE 100V 1.5A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Avalanche | 1.5A | 1.5 V @ 1 A | 5 µA @ 100 V | — | 300 ns | -55°C ~ 175°C | ✓ |
|
BYV13-TAP
DIODE AVALANCHE 400V 1.5A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Avalanche | 1.5A | 1.5 V @ 1 A | 5 µA @ 400 V | — | 300 ns | -55°C ~ 175°C | ✓ |
|
BYV13-TR
DIODE AVALANCHE 400V 1.5A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Avalanche | 1.5A | 1.5 V @ 1 A | 5 µA @ 400 V | — | 300 ns | -55°C ~ 175°C | ✓ |
|
BYV14-TAP
DIODE AVALANCHE 600V 1.5A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Avalanche | 1.5A | 1.5 V @ 1 A | 5 µA @ 600 V | — | 300 ns | -55°C ~ 175°C | ✓ |
|
BYV14-TR
DIODE AVALANCHE 600V 1.5A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Avalanche | 1.5A | 1.5 V @ 1 A | 5 µA @ 600 V | — | 300 ns | -55°C ~ 175°C | ✓ |
|
BYV15-TAP
DIODE AVALANCHE 800V 1.5A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Avalanche | 1.5A | 1.5 V @ 1 A | 5 µA @ 800 V | — | 300 ns | -55°C ~ 175°C | ✓ |
|
BYV15-TR
DIODE AVALANCHE 800V 1.5A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Avalanche | 1.5A | 1.5 V @ 1 A | 5 µA @ 800 V | — | 300 ns | -55°C ~ 175°C | ✓ |
|
BYV16-TAP
DIODE AVALANCHE 1KV 1.5A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Avalanche | 1.5A | 1.5 V @ 1 A | 5 µA @ 1000 V | — | 300 ns | -55°C ~ 175°C | ✓ |
|
BYV16-TR
DIODE AVALANCHE 1KV 1.5A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Avalanche | 1.5A | 1.5 V @ 1 A | 5 µA @ 1000 V | — | 300 ns | -55°C ~ 175°C | ✓ |
|
BYV25D-600,118
DIODE GEN PURP 600V 5A DPAK |
WeEn Semiconductors Co., Ltd | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 5A | 1.3 V @ 5 A | 50 µA @ 600 V | — | 60 ns | 150°C (Max) | — |
|
BYV25F-600,127
DIODE GEN PURP 600V 5A TO220AC |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 5A | 1.9 V @ 5 A | 50 µA @ 600 V | — | 35 ns | 150°C (Max) | — |
|
BYV25FB-600,118
DIODE GEN PURP 600V 5A D2PAK |
WeEn Semiconductors Co., Ltd | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 5A | 1.9 V @ 5 A | 50 µA @ 600 V | — | 35 ns | 150°C (Max) | — |
|
BYV25FD-600,118
DIODE GEN PURP 600V 5A DPAK |
WeEn Semiconductors Co., Ltd | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 5A | 1.9 V @ 5 A | 50 µA @ 600 V | — | 35 ns | 150°C (Max) | — |
|
BYV25FX-600,127
NOW WEEN - BYV25FX-600 - ULTRAFA |
Rochester Electronics | Active | Through Hole | TO-220-2 Full Pack | TO-220F | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 5A | 1.9 V @ 5 A | 50 µA @ 600 V | — | 35 ns | 150°C (Max) | — |
|
BYV25FX-600,127
DIODE GEN PURP 600V 5A TO220FP |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 5A | 1.9 V @ 5 A | 50 µA @ 600 V | — | 35 ns | 150°C (Max) | — |
|
BYV25G-600,127
NOW WEEN - BYV25G-600 - ULTRAFAS |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BYV25G-600,127
DIODE GEN PURP 600V 5A I2PAK |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 5A | 1.3 V @ 5 A | 50 µA @ 600 V | — | 60 ns | 150°C (Max) | — |
|
BYV25X-600,127
NOW WEEN - BYV25X-600 - ULTRAFAS |
Rochester Electronics | Active | Through Hole | TO-220-2 Full Pack | TO-220F | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 5A | 1.3 V @ 5 A | 50 µA @ 600 V | — | 60 ns | 150°C (Max) | — |
|
BYV25X-600,127
DIODE GEN PURP 600V 5A TO220FP |
WeEn Semiconductors Co., Ltd | Active | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 5A | 1.3 V @ 5 A | 50 µA @ 600 V | — | 60 ns | 150°C (Max) | — |
|
BYV26A-TAP
DIODE AVALANCHE 200V 1A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Avalanche | 1A | 2.5 V @ 1 A | 5 µA @ 200 V | — | 30 ns | -55°C ~ 175°C | ✓ |
|
BYV26A-TR
DIODE AVALANCHE 200V 1A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Avalanche | 1A | 2.5 V @ 1 A | 5 µA @ 200 V | — | 30 ns | -55°C ~ 175°C | ✓ |
|
BYV26B-TAP
DIODE AVALANCHE 400V 1A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Avalanche | 1A | 2.5 V @ 1 A | 5 µA @ 400 V | — | 30 ns | -55°C ~ 175°C | ✓ |
|
BYV26B-TR
DIODE AVALANCHE 400V 1A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Avalanche | 1A | 2.5 V @ 1 A | 5 µA @ 400 V | — | 30 ns | -55°C ~ 175°C | ✓ |
|
BYV26C-TAP
DIODE AVALANCHE 600V 1A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Avalanche | 1A | 2.5 V @ 1 A | 5 µA @ 600 V | — | 30 ns | -55°C ~ 175°C | ✓ |
|
BYV26C-TR
DIODE AVALANCHE 600V 1A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Avalanche | 1A | 2.5 V @ 1 A | 5 µA @ 600 V | — | 30 ns | -55°C ~ 175°C | ✓ |
|
BYV26D-TAP
DIODE AVALANCHE 800V 1A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Avalanche | 1A | 2.5 V @ 1 A | 5 µA @ 800 V | — | 75 ns | -55°C ~ 175°C | — |
|
BYV26D-TR
DIODE AVALANCHE 800V 1A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Avalanche | 1A | 2.5 V @ 1 A | 5 µA @ 800 V | — | 75 ns | -55°C ~ 175°C | — |
|
BYV26DGP-E3/54
DIODE GEN PURP 800V 1A DO204AC |
Vishay | Active | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Standard | 1A | 2.5 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | 75 ns | -65°C ~ 175°C | ✓ |
|
BYV26DGP-E3/73
DIODE GEN PURP 800V 1A DO204AC |
Vishay | Active | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Standard | 1A | 2.5 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | 75 ns | -65°C ~ 175°C | ✓ |
|
BYV26DGPHE3/54
DIODE GEN PURP 800V 1A DO204AC |
Vishay | Obsolete | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Standard | 1A | 2.5 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | 75 ns | -65°C ~ 175°C | ✓ |
|
BYV26DGPHE3/73
DIODE GEN PURP 800V 1A DO204AC |
Vishay | Obsolete | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Standard | 1A | 2.5 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | 75 ns | -65°C ~ 175°C | ✓ |
|
BYV26E
DIODE AVALANCHE 1000V 1A DO41 |
EIC Semiconductor, Inc. | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Avalanche | 1A | 2.5 V @ 1 A | 5 µA @ 1000 V | — | 75 ns | -65°C ~ 175°C | ✓ |
|
BYV26E-TAP
DIODE AVALANCHE 1000V 1A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Avalanche | 1A | 2.5 V @ 1 A | 5 µA @ 1000 V | — | 75 ns | -55°C ~ 175°C | — |
|
BYV26E-TR
DIODE AVALANCHE 1000V 1A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Avalanche | 1A | 2.5 V @ 1 A | 5 µA @ 1000 V | — | 75 ns | -55°C ~ 175°C | ✓ |