Diyotlar - Doğrultucular - Tekil
- Komponent
- 49,938
- Marka
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Komponentler
10,000 sonuç · Sayfa 95/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N6638U/TR
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Surface Mount | SQ-MELF, E | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 125 V | Standard | 300mA (DC) | 1.1 V @ 200 mA | 500 nA @ 150 V | 2.5pF @ 0V, 1MHz | 4.5 ns | -65°C ~ 175°C | — |
|
1N6638US
.3A ULTRA FAST 115V |
Semtech | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6638US
DIODE GEN PURPOSE |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6638US/TR
SWITCHING |
Microchip Technology | Active | Surface Mount | SQ-MELF, D | D-5D | Fast Recovery =< 500ns, > 200mA (Io) | 125 V | Standard | 300mA | 1.1 V @ 200 mA | 500 nA @ 125 V | 2.5pF @ 0V, 1MHz | 20 ns | -65°C ~ 175°C | — |
|
1N6639
DIODE GEN PURPOSE |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Fast Recovery =< 500ns, > 200mA (Io) | 75 V | Standard | 300mA | 1.2 V @ 500 mA | — | — | 4 ns | -65°C ~ 175°C | — |
|
1N6639US
DIODE GEN PURPOSE |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | ✓ |
|
1N6640
DIODE GEN PURPOSE |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6640/TR
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Through Hole | D, Axial | D, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 300mA | 1 V @ 200 mA | 100 nA @ 50 V | — | 4 ns | -65°C ~ 175°C | — |
|
1N6640US
DIODE GEN PURP 75V 300MA D5D |
Microchip Technology | Active | Surface Mount | SQ-MELF, D | D-5D | Fast Recovery =< 500ns, > 200mA (Io) | 75 V | Standard | 300mA (DC) | 1 V @ 200 mA | 100 nA @ 50 V | — | 4 ns | -65°C ~ 175°C | ✓ |
|
1N6640US/TR
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Surface Mount | SQ-MELF, D | D-5D | Fast Recovery =< 500ns, > 200mA (Io) | 75 V | Standard | 300mA (DC) | 1 V @ 200 mA | 100 nA @ 50 V | — | 4 ns | -65°C ~ 175°C | — |
|
1N6641
DIODE GEN PURPOSE |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6641US
DIODE GEN PURPOSE |
Microchip Technology | Active | Surface Mount | D, SQ-MELF | D-5D | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 300mA (DC) | 1.1 V @ 200 mA | 100 nA @ 50 V | — | 5 ns | -65°C ~ 175°C | ✓ |
|
1N6642
DIODE GEN PURPOSE |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6642
DIODE GEN PURP 75V 300MA AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 75 V | Standard | 300mA | 800 mV @ 10 mA | 500 nA @ 75 V | — | 5 ns | — | — |
|
1N6642U
DIODE GEN PURP 75V 300MA D5D |
Microchip Technology | Active | Surface Mount | SQ-MELF, D | D-5D | Fast Recovery =< 500ns, > 200mA (Io) | 75 V | Standard | 300mA | 800 mV @ 10 mA | 500 µA @ 75 V | — | 5 ns | -65°C ~ 175°C | ✓ |
|
1N6642UB
DIODE GEN PURPOSE |
Microchip Technology | Active | Surface Mount | 4-SMD, No Lead | UB | Fast Recovery =< 500ns, > 200mA (Io) | — | Standard | — | 1.2 V @ 100 mA | — | 5pF @ 0V, 1MHz | 5 ns | — | — |
|
1N6642UB/TR
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Surface Mount | 4-SMD, No Lead | UB | Fast Recovery =< 500ns, > 200mA (Io) | — | Standard | — | 1.2 V @ 100 mA | — | 5pF @ 0V, 1MHz | 5 ns | — | — |
|
1N6642UB2
DIODE GEN PURPOSE |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6642UB2R
DIODE GEN PURPOSE |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6642UBCA
DIODE GEN PURPOSE |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6642UBCC
DIODE GEN PURPOSE |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6642UBD
DIODE GEN PURPOSE |
Microchip Technology | Active | Surface Mount | 4-SMD, No Lead | UB | Fast Recovery =< 500ns, > 200mA (Io) | — | Standard | — | 1.2 V @ 100 mA | — | 5pF @ 0V, 1MHz | 5 ns | — | — |
|
1N6642UBD/TR
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Surface Mount | 4-SMD, No Lead | UB | Fast Recovery =< 500ns, > 200mA (Io) | — | Standard | — | 1.2 V @ 100 mA | — | 5pF @ 0V, 1MHz | 5 ns | — | — |
|
1N6642US
DIODE GEN PURP 75V 300MA D5D |
Microchip Technology | Active | Surface Mount | SQ-MELF, D | D-5D | Fast Recovery =< 500ns, > 200mA (Io) | 75 V | Standard | 300mA | 1.2 V @ 100 mA | 500 nA @ 75 V | 5pF @ 0V, 1MHz | 5 ns | -65°C ~ 175°C | — |
|
1N6642US
.3A ULTRA FAST 100V |
Semtech | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6642US/TR
SWITCHING |
Microchip Technology | Active | Surface Mount | SQ-MELF, D | D-5D | Fast Recovery =< 500ns, > 200mA (Io) | 75 V | Standard | 300mA | 1.2 V @ 100 mA | 500 nA @ 75 V | 5pF @ 0V, 1MHz | 5 ns | -65°C ~ 175°C | — |
|
1N6642USE3
SWITCHING |
Microchip Technology | Active | Surface Mount | SQ-MELF, B | B, SQ-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 75 V | Standard | 300mA | 1.2 V @ 100 mA | 500 nA @ 75 V | 5pF @ 0V, 1MHz | 5 ns | -65°C ~ 175°C | — |
|
1N6642USE3/TR
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Surface Mount | SQ-MELF, B | B, SQ-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 75 V | Standard | 300mA | 1.2 V @ 100 mA | 500 nA @ 75 V | 5pF @ 0V, 1MHz | 5 ns | -65°C ~ 175°C | — |
|
1N6643
DIODE GEN PURPOSE |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6643
DIODE GEN PURP 50V 300MA AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 300mA | 800 mV @ 10 mA | 500 nA @ 50 V | — | 6 ns | — | — |
|
1N6643US
DIODE GEN PURP 50V 300MA D5B |
Microchip Technology | Active | Surface Mount | SQ-MELF, B | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 300mA | 1.2 V @ 100 mA | 50 nA @ 50 V | 5pF @ 0V, 1MHz | 20 ns | -65°C ~ 175°C | — |
|
1N6643US
.3A ULTRA FAST 75V |
Semtech | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6643US/TR
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Surface Mount | SQ-MELF, B | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 300mA | 1.2 V @ 100 mA | 50 nA @ 50 V | 5pF @ 0V, 1MHz | 20 ns | -65°C ~ 175°C | — |
|
1N6651
RECTIFIER DIODE |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6657
RECTIFIER DIODE |
Microchip Technology | Active | Through Hole | TO-254-3, TO-254AA | TO-254 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 15A (DC) | 1.2 V @ 20 A | 10 µA @ 100 V | 150pF @ 10V, 1MHz | 35 ns | -55°C ~ 175°C | — |
|
1N6657R
RECTIFIER DIODE |
Microchip Technology | Active | Through Hole | TO-254-3, TO-254AA | TO-254 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 15A (DC) | 1.2 V @ 20 A | 10 µA @ 100 V | 150pF @ 10V, 1MHz | 35 ns | -55°C ~ 175°C | — |
|
1N6658
RECTIFIER DIODE |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6658R
RECTIFIER DIODE |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6659R
RECTIFIER DIODE |
Microchip Technology | Active | Through Hole | TO-254-3, TO-254AA | TO-254 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 15A (DC) | 1.2 V @ 20 A | 10 µA @ 200 V | 150pF @ 10V, 1MHz | 35 ns | -55°C ~ 175°C | — |
|
1N6660CAT1
RECTIFIER DIODE |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6660CCT1
RECTIFIER DIODE |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6660DT1
RECTIFIER DIODE |
Microchip Technology | Active | Through Hole | TO-254-3, TO-254AA (Straight Leads) | TO-254AA | Fast Recovery =< 500ns, > 200mA (Io) | 45 V | Schottky | 15A | 750 mV @ 15 A | 1 mA @ 45 V | 2000pF @ 5V, 1MHz | — | -65°C ~ 150°C | — |
|
1N6660R
RECTIFIER DIODE |
Microchip Technology | Active | Through Hole | TO-254-3, TO-254AA (Straight Leads) | TO-254AA | Fast Recovery =< 500ns, > 200mA (Io) | 45 V | Schottky | 15A | 750 mV @ 15 A | 1 mA @ 45 V | 2000pF @ 5V, 1MHz | — | -65°C ~ 150°C | — |
|
1N6661
RECTIFIER DIODE |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Standard Recovery >500ns, > 200mA (Io) | 225 V | Standard | 500mA | 1 V @ 400 mA | 50 nA @ 225 V | — | — | -65°C ~ 175°C | — |
|
1N6661/TR
STD RECTIFIER |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Standard Recovery >500ns, > 200mA (Io) | 225 V | Standard | 500mA | 1 V @ 400 mA | 50 nA @ 225 V | — | — | -65°C ~ 175°C | — |
|
1N6661US
RECTIFIER DIODE |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | A, SQ-MELF | Standard Recovery >500ns, > 200mA (Io) | 225 V | Standard | — | 1 V @ 400 mA | 50 nA @ 225 V | — | — | -65°C ~ 175°C | — |
|
1N6661US/TR
STD RECTIFIER |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | A, SQ-MELF | Standard Recovery >500ns, > 200mA (Io) | 225 V | Standard | — | 1 V @ 400 mA | 50 nA @ 225 V | — | — | -65°C ~ 175°C | — |
|
1N6662
RECT , .5AMP 400V DO7 |
Solid State Inc. | Active | Through Hole | DO-204AA, DO-7, Axial | DO-7 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 500mA | — | — | — | — | — | — |
|
1N6662
RECTIFIER DIODE |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 500mA | 1 V @ 400 mA | 50 nA @ 400 V | — | — | -65°C ~ 175°C | — |
|
1N6662/TR
STD RECTIFIER |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 500mA | 1 V @ 400 mA | 50 nA @ 400 V | — | — | -65°C ~ 175°C | — |