Diyotlar - Doğrultucular - Tekil
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Komponentler
10,000 sonuç · Sayfa 94/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N6621US/TR
UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 2A | 1.6 V @ 2 A | 500 nA @ 400 V | 10pF @ 10V, 1MHz | 45 ns | -65°C ~ 150°C | — |
|
1N6622
DIODE GEN PURP 600V 1.2A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | A-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1.2A | 1.4 V @ 1.2 A | 500 nA @ 600 V | — | 45 ns | -65°C ~ 150°C | — |
|
1N6622/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | A-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1.2A | 1.4 V @ 1.2 A | 500 nA @ 600 V | — | 45 ns | -65°C ~ 150°C | — |
|
1N6622E3
ZENER DIODE |
Microchip Technology | Active | Through Hole | A, Axial | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | — | — | — | 1.6 V @ 2 A | — | — | 30 ns | — | — |
|
1N6622E3/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | — | — | — | 1.6 V @ 2 A | — | — | 30 ns | — | — |
|
1N6622US
DIODE GEN PURP 660V 1.2A A-MELF |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 660 V | Standard | 1.2A | 1.4 V @ 1.2 A | 500 nA @ 660 V | 10pF @ 10V, 1MHz | 30 ns | -65°C ~ 150°C | — |
|
1N6622US/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 660 V | Standard | 1.2A | 1.4 V @ 1.2 A | 500 nA @ 660 V | 10pF @ 10V, 1MHz | 30 ns | -65°C ~ 150°C | — |
|
1N6623
DIODE GEN PURP 880V 1A AXIAL |
WEC | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 880 V | Standard | 1A | 1.55 V @ 1 A | 500 nA @ 880 V | 10pF @ 10V, 1MHz | 50 ns | -65°C ~ 150°C | — |
|
1N6623/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 880 V | Standard | 1A | 1.55 V @ 1 A | 500 nA @ 880 V | 10pF @ 10V, 1MHz | 50 ns | -65°C ~ 150°C | — |
|
1N6623US
DIODE GEN PURP 880V 1A A-MELF |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 880 V | Standard | 1A | 1.55 V @ 1 A | 500 nA @ 880 V | 10pF @ 10V, 1MHz | 50 ns | -65°C ~ 150°C | — |
|
1N6623US/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 880 V | Standard | 1A | 1.55 V @ 1 A | 500 nA @ 880 V | 10pF @ 10V, 1MHz | 50 ns | -65°C ~ 150°C | — |
|
1N6624
DIODE GEN PURP 990V 1A A-PAK |
Microchip Technology | Market | Through Hole | A, Axial | A-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 990 V | Standard | 1A | 18 V @ 500 mA | 500 nA @ 900 V | 10pF @ 10V, 1MHz | 60 ns | -65°C ~ 150°C | — |
|
1N6624/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | A-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 990 V | Standard | 1A | 18 V @ 500 mA | 500 nA @ 900 V | 10pF @ 10V, 1MHz | 60 ns | -65°C ~ 150°C | — |
|
1N6624US
DIODE GEN PURP 990V 1A A-MELF |
Microchip Technology | Market | Surface Mount | SQ-MELF, A | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 990 V | Standard | 1A | 1.55 V @ 1 A | 500 nA @ 990 V | 10pF @ 10V, 1MHz | 50 ns | -65°C ~ 150°C | — |
|
1N6625
DIODE GEN PURP 1.1KV 1A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 1100 V | Standard | 1A | 1.75 V @ 1 A | 1 µA @ 1100 V | 10pF @ 10V, 1MHz | 60 ns | -65°C ~ 150°C | — |
|
1N6625/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 1.1 V | Standard | 1A | 1.75 V @ 1 A | 1 µA @ 1.1 V | 10pF @ 10V, 1MHz | 60 ns | -65°C ~ 150°C | — |
|
1N6625E3
DIODE GEN PURP 1.1KV 1A AXIAL |
Microchip Technology | Market | Through Hole | A, Axial | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 1100 V | Standard | 1A | 1.95 V @ 1.5 A | 1 µA @ 1000 V | — | 80 ns | -65°C ~ 150°C | — |
|
1N6625E3/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 1.1 V | Standard | 1A | 1.95 V @ 1.5 A | 1 µA @ 1 V | — | 80 ns | -65°C ~ 150°C | — |
|
1N6625US
DIODE GEN PURP 1.1KV 1A A-MELF |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 1100 V | Standard | 1A | 1.75 V @ 1 A | 1 µA @ 1100 V | 10pF @ 10V, 1MHz | 60 ns | -65°C ~ 150°C | — |
|
1N6625US/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 1.1 V | Standard | 1A | 1.75 V @ 1 A | 1 µA @ 1.1 V | 10pF @ 10V, 1MHz | 60 ns | -65°C ~ 150°C | — |
|
1N6626
DIODE GEN PURP 220V 1.75A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 220 V | Standard | 1.75A | 1.35 V @ 2 A | 2 µA @ 220 V | 40pF @ 10V, 1MHz | 30 ns | -65°C ~ 150°C | — |
|
1N6626/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 220 V | Standard | 1.75A | 1.35 V @ 2 A | 2 µA @ 220 V | 40pF @ 10V, 1MHz | 30 ns | -65°C ~ 150°C | — |
|
1N6626UE3
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | E, Axial | E, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1.75A | 1.35 V @ 2 A | 2 µA @ 200 V | — | 30 ns | -65°C ~ 150°C | — |
|
1N6626US
DIODE GEN PURP 220V 1.75A A-MELF |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 220 V | Standard | 1.75A | 1.35 V @ 2 A | 2 µA @ 220 V | 40pF @ 10V, 1MHz | 30 ns | -65°C ~ 150°C | — |
|
1N6626US/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 220 V | Standard | 1.75A | 1.35 V @ 2 A | 2 µA @ 220 V | 40pF @ 10V, 1MHz | 30 ns | -65°C ~ 150°C | — |
|
1N6627
DIODE GEN PURP 440V 1.75A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 440 V | Standard | 1.75A | 1.35 V @ 2 A | 2 µA @ 440 V | 40pF @ 10V, 1MHz | 30 ns | -65°C ~ 150°C | — |
|
1N6627/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 440 V | Standard | 1.75A | 1.35 V @ 2 A | 2 µA @ 440 V | 40pF @ 10V, 1MHz | 30 ns | -65°C ~ 150°C | — |
|
1N6627U
ZENER DIODE |
Microchip Technology | Active | Surface Mount | SQ-MELF, E | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 4A | 1.5 V @ 4 A | 2 µA @ 400 V | — | 30 ns | — | — |
|
1N6627U/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, E | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 4A | 1.5 V @ 4 A | 2 µA @ 400 V | — | 30 ns | — | — |
|
1N6627US
DIODE GEN PURP 440V 1.75A A-MELF |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 440 V | Standard | 1.75A | 1.35 V @ 2 A | 2 µA @ 440 V | 40pF @ 10V, 1MHz | 30 ns | -65°C ~ 150°C | — |
|
1N6627US/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 440 V | Standard | 1.75A | 1.35 V @ 2 A | 2 µA @ 440 V | 40pF @ 10V, 1MHz | 30 ns | -65°C ~ 150°C | — |
|
1N6628
DIODE GEN PURP 600V 1.75A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | A-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1.75A | 1.35 V @ 2 A | 2 µA @ 600 V | — | 45 ns | -65°C ~ 150°C | — |
|
1N6628/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | A-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1.75A | 1.35 V @ 2 A | 2 µA @ 600 V | — | 45 ns | -65°C ~ 150°C | — |
|
1N6628US
DIODE GEN PURP 660V 1.75A A-MELF |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 660 V | Standard | 1.75A | 1.35 V @ 2 A | 2 µA @ 660 V | 40pF @ 10V, 1MHz | 30 ns | -65°C ~ 150°C | — |
|
1N6628US/TR
UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, E | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 2.3A | 1.5 V @ 4 A | 2 µA @ 600 V | 40pF @ 10V, 1MHz | 45 ns | -65°C ~ 150°C | — |
|
1N6629
DIODE GEN PURP 880V 1.4A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 880 V | Standard | 1.4A | 1.4 V @ 1.4 A | 2 µA @ 880 V | 40pF @ 10V, 1MHz | 50 ns | -65°C ~ 150°C | — |
|
1N6629US
DIODE GEN PURP 880V 1.4A A-MELF |
Microchip Technology | Market | Surface Mount | SQ-MELF, A | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 880 V | Standard | 1.4A | 1.4 V @ 1.4 A | 2 µA @ 880 V | 40pF @ 10V, 1MHz | 50 ns | -65°C ~ 150°C | — |
|
1N662A BK
DIODE |
Central Semiconductor | Last Time Buy | Through Hole | DO-204AA, DO-7, Axial | DO-7 | Small Signal =< 200mA (Io), Any Speed | 80 V | Standard | 150mA | 1 V @ 100 mA | 20 µA @ 75 V | — | 300 ns | -65°C ~ 200°C | — |
|
1N662A TR
DIODE |
Central Semiconductor | Last Time Buy | Through Hole | DO-204AA, DO-7, Axial | DO-7 | Small Signal =< 200mA (Io), Any Speed | 80 V | Standard | 150mA | 1 V @ 100 mA | 20 µA @ 75 V | — | 300 ns | -65°C ~ 200°C | — |
|
1N6630
DIODE GEN PURP 990V 1.4A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 990 V | Standard | 1.4A | 1.4 V @ 1.4 A | 2 µA @ 990 V | 40pF @ 10V, 1MHz | 50 ns | -65°C ~ 150°C | — |
|
1N6630/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 990 V | Standard | 1.4A | 1.4 V @ 1.4 A | 2 µA @ 990 V | 40pF @ 10V, 1MHz | 50 ns | -65°C ~ 150°C | — |
|
1N6630US
DIODE GEN PURP 900V 1.4A D5B |
Microchip Technology | Active | Surface Mount | E-MELF | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 900 V | Standard | 1.4A | 1.7 V @ 3 A | 4 µA @ 100 V | — | 50 ns | -65°C ~ 150°C | — |
|
1N6630US/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | E-MELF | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 900 V | Standard | 1.4A | 1.7 V @ 3 A | 4 µA @ 100 V | — | 50 ns | -65°C ~ 150°C | — |
|
1N6631
DIODE GEN PURP 1.1KV 1.4A AXIAL |
Microchip Technology | Market | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 1100 V | Standard | 1.4A | 1.4 V @ 1.4 A | 4 µA @ 1100 V | 40pF @ 10V, 1MHz | 60 ns | -65°C ~ 150°C | — |
|
1N6631/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 1.1 V | Standard | 1.4A | 1.4 V @ 1.4 A | 4 µA @ 1.1 V | 40pF @ 10V, 1MHz | 60 ns | -65°C ~ 150°C | — |
|
1N6631US
DIODE GEN PURP 1.1KV 1.4A A-MELF |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 1100 V | Standard | 1.4A | 1.4 V @ 1.4 A | 4 µA @ 1100 V | 40pF @ 10V, 1MHz | 60 ns | -65°C ~ 150°C | — |
|
1N6631US/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 1.1 V | Standard | 1.4A | 1.4 V @ 1.4 A | 4 µA @ 1.1 V | 40pF @ 10V, 1MHz | 60 ns | -65°C ~ 150°C | — |
|
1N6638
DIODE GEN PURPOSE |
WEC | Active | Through Hole | D, Axial | D, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 125 V | Standard | 300mA | 1.1 V @ 200 mA | 500 nA @ 125 V | 2pF @ 0V, 1MHz | 4.5 ns | -65°C ~ 200°C | — |
|
1N6638
DIODE GEN PURP 125V 300MA AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 125 V | Standard | 300mA | 800 mV @ 10 mA | 500 nA @ 125 V | — | 4.5 ns | — | — |
|
1N6638U
DIODE GEN PURPOSE |
Microchip Technology | Active | Surface Mount | SQ-MELF, E | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 125 V | Standard | 300mA (DC) | 1.1 V @ 200 mA | 500 nA @ 150 V | 2.5pF @ 0V, 1MHz | 4.5 ns | -65°C ~ 175°C | — |