Diyotlar - Doğrultucular - Tekil
- Komponent
- 49,938
- Marka
- 57
Komponentler
10,000 sonuç · Sayfa 91/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N6075US/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 3A | 2.04 V @ 9.4 A | 1 µA @ 150 V | — | 30 ns | -65°C ~ 155°C | — |
|
1N6076
DIODE GEN PURP 50V 1.3A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1.3A | 1.76 V @ 18.8 A | 5 µA @ 50 V | — | 30 ns | -65°C ~ 155°C | — |
|
1N6076
DIODE GEN PURP 50V 6A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 6A | 1.2 V @ 3 A | 5 µA @ 50 V | 60pF @ 5V, 1MHz | 30 ns | -65°C ~ 150°C | — |
|
1N6076/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1.3A | 1.76 V @ 18.8 A | 5 µA @ 50 V | — | 30 ns | -65°C ~ 155°C | — |
|
1N6076US
DIODE GEN PURP 50V 6A D5B |
Microchip Technology | Active | Surface Mount | SQ-MELF, E | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 6A | 1.76 V @ 18.8 A | 5 µA @ 50 V | — | 30 ns | -65°C ~ 155°C | — |
|
1N6077
DIODE GEN PURP 100V 1.3A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1.3A | 1.76 V @ 18.8 A | 5 µA @ 100 V | — | 30 ns | -65°C ~ 155°C | — |
|
1N6077
DIODE GEN PURP 100V 6A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 6A | 1.2 V @ 3 A | 5 µA @ 100 V | 60pF @ 5V, 1MHz | 30 ns | -65°C ~ 150°C | — |
|
1N6077/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1.3A | 1.76 V @ 18.8 A | 5 µA @ 100 V | — | 30 ns | -65°C ~ 155°C | — |
|
1N6077E3
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | E, Axial | E, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 6A | 1.76 V @ 18.8 A | 5 µA @ 100 V | — | 30 ns | -65°C ~ 155°C | — |
|
1N6077E3/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | E, Axial | E, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 6A | 1.76 V @ 18.8 A | 5 µA @ 100 V | — | 30 ns | -65°C ~ 155°C | — |
|
1N6077US
DIODE GEN PURP 100V 6A D5B |
Microchip Technology | Active | Surface Mount | SQ-MELF, E | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 6A | 1.76 V @ 18.8 A | 5 µA @ 100 V | — | 30 ns | -65°C ~ 155°C | — |
|
1N6078
DIODE GEN PURP 150V 6A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 6A | 1.2 V @ 3 A | 5 µA @ 150 V | 60pF @ 5V, 1MHz | 30 ns | -65°C ~ 150°C | — |
|
1N6078
DIODE GEN PURP 150V 1.3A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 1.3A | 1.76 V @ 18.8 A | 5 µA @ 150 V | — | 30 ns | -65°C ~ 155°C | — |
|
1N6078/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 1.3A | 1.76 V @ 18.8 A | 5 µA @ 150 V | — | 30 ns | -65°C ~ 155°C | — |
|
1N6078US
DIODE GEN PURP 150V 6A D5B |
Microchip Technology | Active | Surface Mount | E-MELF | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 6A | 1.76 V @ 18.8 A | 5 µA @ 150 V | — | 30 ns | -65°C ~ 155°C | — |
|
1N6079
DIODE GEN PURP 50V 2A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 2A | 1.5 V @ 37.7 A | 10 µA @ 50 V | — | 30 ns | -65°C ~ 155°C | — |
|
1N6079
DIODE GEN PURP 50V 5A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 5A | 970 mV @ 5 A | 10 µA @ 50 V | 230pF @ 5V, 1MHz | 30 ns | -65°C ~ 150°C | — |
|
1N6079/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 2A | 1.5 V @ 37.7 A | 10 µA @ 50 V | — | 30 ns | -65°C ~ 155°C | — |
|
1N6079US
DIODE GEN PURP 50V 2A G-MELF |
Microchip Technology | Active | Surface Mount | SQ-MELF, G | G-MELF (D-5C) | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 2A | 1.5 V @ 37.7 A | 10 µA @ 50 V | — | 30 ns | -65°C ~ 155°C | — |
|
1N6080
DIODE GEN PURP 100V 2A AXIAL |
Microchip Technology | Market | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 2A | 1.5 V @ 37.7 A | 10 µA @ 100 V | — | 30 ns | -65°C ~ 155°C | — |
|
1N6080
DIODE GEN PURP 100V 5A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 5A | 970 mV @ 5 A | 10 µA @ 100 V | 230pF @ 5V, 1MHz | 30 ns | -65°C ~ 150°C | — |
|
1N6080/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 2A | 1.5 V @ 37.7 A | 10 µA @ 100 V | — | 30 ns | -65°C ~ 155°C | — |
|
1N6080US
DIODE GEN PURP 100V 2A G-MELF |
Microchip Technology | Market | Surface Mount | SQ-MELF, G | G-MELF (D-5C) | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 2A | 1.5 V @ 37.7 A | 10 µA @ 100 V | — | 30 ns | -65°C ~ 155°C | ✓ |
|
1N6081
DIODE GEN PURP 150V 2A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 2A | 1.5 V @ 37.7 A | 10 µA @ 150 V | — | 30 ns | -65°C ~ 155°C | — |
|
1N6081
DIODE GEN PURP 150V 5A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 5A | 970 mV @ 5 A | 10 µA @ 150 V | 230pF @ 5V, 1MHz | 30 ns | -65°C ~ 150°C | — |
|
1N6081/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 2A | 1.5 V @ 37.7 A | 10 µA @ 150 V | — | 30 ns | -65°C ~ 155°C | — |
|
1N6081US
DIODE GEN PURP 150V 2A G-MELF |
Microchip Technology | Active | Surface Mount | SQ-MELF, G | G-MELF (D-5C) | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 2A | 1.5 V @ 37.7 A | 10 µA @ 150 V | — | 30 ns | -65°C ~ 155°C | ✓ |
|
1N6095
DIODE SCHOTTKY 30V 25A DO4 |
GeneSiC Semiconductor | Active | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | Schottky | 25A | 580 mV @ 25 A | 2 mA @ 20 V | — | — | -55°C ~ 150°C | ✓ |
|
1N6095
SCHOTTKY RECTIFIER |
Microchip Technology | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | Schottky | 25A | 600 mV @ 5 A | 2 mA @ 20 V | — | — | -65°C ~ 150°C | — |
|
1N6095R
DIODE SCHOTTKY REV 30V DO4 |
GeneSiC Semiconductor | Active | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | Schottky, Reverse Polarity | 25A | 580 mV @ 25 A | 2 mA @ 20 V | — | — | -55°C ~ 150°C | ✓ |
|
1N6096
DIODE SCHOTTKY 40V 25A DO4 |
GeneSiC Semiconductor | Active | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | Schottky | 25A | 580 mV @ 25 A | 2 mA @ 20 V | — | — | -55°C ~ 150°C | ✓ |
|
1N6096
SCHOTTKY RECTIFIER |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6096R
DIODE SCHOTTKY REV 40V DO4 |
GeneSiC Semiconductor | Active | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | Schottky, Reverse Polarity | 25A | 580 mV @ 25 A | 2 mA @ 20 V | — | — | -55°C ~ 150°C | — |
|
1N6097
SCHOTTKY RECTIFIER |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6097
DIODE SCHOTTKY 30V 50A DO5 |
GeneSiC Semiconductor | Active | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | Schottky | 50A | 700 mV @ 50 A | 5 mA @ 30 V | — | — | -65°C ~ 150°C | — |
|
1N6097
50 AMP SCHOTTKY D-05 |
Solid State Inc. | Active | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | Schottky | 50A | 860 mV @ 157 A | 250 mA @ 30 V | 7000pF @ 1V, 1MHz | — | -65°C ~ 125°C | — |
|
1N6097
DIODE SCHOTTKY 30V 50A DO203AB |
Vishay | Obsolete | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | Schottky | 50A | 600 mV @ 10 A | 75 mA @ 30 V | — | — | -65°C ~ 125°C | ✓ |
|
1N6097R
DIODE SCHOTTKY REV 30V DO5 |
GeneSiC Semiconductor | Active | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | Schottky, Reverse Polarity | 50A | 700 mV @ 50 A | 5 mA @ 30 V | — | — | -65°C ~ 150°C | — |
|
1N6098
DIODE SCHOTTKY 40V 50A DO5 |
GeneSiC Semiconductor | Active | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | Schottky | 50A | 700 mV @ 50 A | 5 mA @ 30 V | — | — | -65°C ~ 150°C | ✓ |
|
1N6098
SCHOTTKY RECTIFIER |
Microchip Technology | Active | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | Schottky | 50A | 600 mV @ 10 A | 5 mA @ 30 V | — | — | -65°C ~ 150°C | — |
|
1N6098
50 AMP SCHOTTKY D-05 |
Solid State Inc. | Active | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | Schottky | 50A | 860 mV @ 157 A | 250 mA @ 40 V | 7000pF @ 1V, 1MHz | — | -65°C ~ 125°C | — |
|
1N6098R
DIODE SCHOTTKY REV 40V DO5 |
GeneSiC Semiconductor | Active | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | Schottky, Reverse Polarity | 50A | 700 mV @ 50 A | 5 mA @ 30 V | — | — | -65°C ~ 150°C | — |
|
1N60A
D-GE 40PRV .005A |
NTE Electronics, Inc. | Active | Through Hole | DO-204AA, DO-7, Axial | DO-7 | Small Signal =< 200mA (Io), Any Speed | 30 V | Standard | 150mA (DC) | 1 V @ 5 mA | 65 µA @ 10 V | — | — | -65°C ~ 85°C | — |
|
1N62
D-GE 140 PRV .005A |
NTE Electronics, Inc. | Active | Through Hole | DO-204AA, DO-7, Axial | DO-7 | Standard Recovery >500ns, > 200mA (Io) | 110 V | Standard | 500mA (DC) | 1 V @ 5 mA | 700 µA @ 125 V | — | — | -65°C ~ 85°C | — |
|
1N6263
DIODE SCHOTTKY 60V 15MA DO35 |
STMicroelectronics | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 60 V | Schottky | 15mA (DC) | 1 V @ 15 mA | 200 nA @ 50 V | 2.2pF @ 0V, 1MHz | — | -65°C ~ 200°C | — |
|
1N6263 BK
TRANSISTOR |
Central Semiconductor | Obsolete | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 60 V | Schottky | 15mA | 1 V @ 15 mA | 200 nA @ 50 V | 2.2pF @ 0V, 1MHz | — | -65°C ~ 200°C | — |
|
1N6263 TR
TRANSISTOR |
Central Semiconductor | Obsolete | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 60 V | Schottky | 15mA | 1 V @ 15 mA | 200 nA @ 50 V | 2.2pF @ 0V, 1MHz | — | -65°C ~ 200°C | — |
|
1N6263 TR4K
TRANSISTOR |
Central Semiconductor | Obsolete | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 60 V | Schottky | 15mA | 1 V @ 15 mA | 200 nA @ 50 V | 2.2pF @ 0V, 1MHz | — | -65°C ~ 200°C | — |
|
1N6263W-7
DIODE SCHOTTKY 60V 15MA SOD123 |
Diodes Incorporated | Market | Surface Mount | SOD-123 | SOD-123 | Small Signal =< 200mA (Io), Any Speed | 60 V | Schottky | 15mA (DC) | 1 V @ 15 mA | 200 nA @ 50 V | 2.2pF @ 0V, 1MHz | 1 ns | -55°C ~ 125°C | — |
|
1N6263W-7-F
DIODE SCHOTTKY 60V 15MA SOD123 |
Diodes Incorporated | Active | Surface Mount | SOD-123 | SOD-123 | Small Signal =< 200mA (Io), Any Speed | 60 V | Schottky | 15mA (DC) | 1 V @ 15 mA | 200 nA @ 50 V | 2.2pF @ 0V, 1MHz | 1 ns | -55°C ~ 125°C | — |