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Komponentler
10,000 sonuç · Sayfa 92/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N6304
RECTIFIER DIODE |
Microchip Technology | Active | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 70A (DC) | 1.18 V @ 150 A | 25 µA @ 50 V | 600pF @ 10V, 1MHz | 60 ns | -65°C ~ 175°C | — |
|
1N6304R
RECTIFIER DIODE |
Microchip Technology | Active | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 70A (DC) | 1.18 V @ 150 A | 25 µA @ 50 V | 600pF @ 10V, 1MHz | 60 ns | -65°C ~ 175°C | — |
|
1N6305
RECTIFIER DIODE |
Microchip Technology | Active | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 70A (DC) | 1.18 V @ 150 A | 25 µA @ 100 V | 600pF @ 10V, 1MHz | 60 ns | -65°C ~ 175°C | — |
|
1N6305R
RECTIFIER DIODE |
Microchip Technology | Active | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 70A (DC) | 1.18 V @ 150 A | 25 µA @ 100 V | 600pF @ 10V, 1MHz | 60 ns | -65°C ~ 175°C | — |
|
1N6306
RECTIFIER DIODE |
Microchip Technology | Active | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 70A (DC) | 1.18 V @ 150 A | 25 µA @ 150 V | 600pF @ 10V, 1MHz | 60 ns | -65°C ~ 175°C | — |
|
1N6306R
RECTIFIER DIODE |
Microchip Technology | Active | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 70A (DC) | 1.18 V @ 150 A | 25 µA @ 150 V | 600pF @ 10V, 1MHz | 60 ns | -65°C ~ 175°C | — |
|
1N6391
SCHOTTKY BARRIER RECTIFIER |
Microchip Technology | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | Fast Recovery =< 500ns, > 200mA (Io) | 45 V | Schottky | 25A (DC) | 500 mV @ 5 A | 1.5 mA @ 45 V | 2000pF @ 5V, 1MHz | — | -55°C ~ 175°C | — |
|
1N6392
DIODE SCHOTTKY 45V 54A DO5 |
Microchip Technology | Active | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 45 V | Schottky | 54A | 820 mV @ 120 A | 2 mA @ 45 V | 3000pF @ 5V, 1MHz | — | -55°C ~ 175°C | — |
|
1N6392
DIODE SCHOTTKY 45V 60A DO203AB |
Vishay | Obsolete | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | Fast Recovery =< 500ns, > 200mA (Io) | 45 V | Schottky | 60A | 680 mV @ 60 A | 20 mA @ 45 V | — | — | -55°C ~ 175°C | ✓ |
|
1N6392E3
SCHOTTKY BARRIER RECTIFIER |
Microchip Technology | Active | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 45 V | Schottky | 54A | 820 mV @ 120 A | 2 mA @ 45 V | 3000pF @ 5V, 1MHz | — | -55°C ~ 175°C | — |
|
1N643
SILICON SWITCHING DIODES |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Small Signal =< 200mA (Io), Any Speed | 175 V | Standard | 25A | 1 V @ 10 mA | — | — | 300 ns | -65°C ~ 175°C | — |
|
1N645
D-SI 225V .4A |
NTE Electronics, Inc. | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Standard Recovery >500ns, > 200mA (Io) | 225 V | Standard | 400mA | 1 V @ 400 mA | 200 nA @ 225 V | 15pF @ 4V, 1MHz | — | -65°C ~ 175°C | — |
|
1N645
DIODE 4 AMP 225V DO35 |
Solid State Inc. | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Standard Recovery >500ns, > 200mA (Io) | 225 V | Standard | 400mA | 1 V @ 400 mA | 200 nA @ 225 V | 15pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N645 BK
TRANSISTOR |
Central Semiconductor | Obsolete | Through Hole | DO-204AA, DO-7, Axial | DO-7 | Standard Recovery >500ns, > 200mA (Io) | 225 V | Standard | 400mA | 1 V @ 400 mA | 200 nA @ 225 V | — | — | -65°C ~ 175°C | — |
|
1N645 TR
TRANSISTOR |
Central Semiconductor | Obsolete | Through Hole | DO-204AA, DO-7, Axial | DO-7 | Standard Recovery >500ns, > 200mA (Io) | 225 V | Standard | 400mA | 1 V @ 400 mA | 200 nA @ 225 V | — | — | -65°C ~ 175°C | — |
|
1N645-1
DIODE GEN PURP 225V 400MA DO35 |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Standard Recovery >500ns, > 200mA (Io) | 225 V | Standard | 400mA | 1 V @ 400 mA | 50 nA @ 225 V | — | — | -65°C ~ 175°C | — |
|
1N645-1
DO 35 4 AMP SILICON RECTFIER |
Solid State Inc. | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Standard Recovery >500ns, > 200mA (Io) | 225 V | Standard | 400mA | 1 V @ 400 mA | 50 nA @ 225 V | — | — | -65°C ~ 175°C | — |
|
1N645-1/TR
SWITCHING |
Microchip Technology | Active | Surface Mount | DO-213AA | DO-213AA | Standard Recovery >500ns, > 200mA (Io) | 225 V | Standard | 400mA | 1 V @ 400 mA | 50 nA @ 225 V | — | — | -65°C ~ 175°C | — |
|
1N645-1E3
SWITCHING DIODE |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Standard Recovery >500ns, > 200mA (Io) | 225 V | Standard | 400mA | 1 V @ 400 mA | 50 nA @ 225 V | — | — | -65°C ~ 175°C | — |
|
1N645-1E3/TR
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Standard Recovery >500ns, > 200mA (Io) | 225 V | Standard | 400mA | 1 V @ 400 mA | 50 nA @ 225 V | — | — | -65°C ~ 175°C | — |
|
1N645UR-1
DIODE GEN PURP 225V 400MA DO213 |
Microchip Technology | Market | Surface Mount | DO-213AA | DO-213AA | Standard Recovery >500ns, > 200mA (Io) | 225 V | Standard | 400mA | 1 V @ 400 mA | 50 nA @ 225 V | — | — | -65°C ~ 175°C | — |
|
1N645UR-1/TR
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Surface Mount | DO-213AA | DO-213AA | Standard Recovery >500ns, > 200mA (Io) | 225 V | Standard | 400mA | 1 V @ 400 mA | 50 nA @ 225 V | — | — | -65°C ~ 175°C | — |
|
1N646
SILICON SWITCHING DIODES |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N646-1
DIODE GEN PURP 300V 400MA DO35 |
Microchip Technology | Market | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Standard Recovery >500ns, > 200mA (Io) | 300 V | Standard | 400mA | 1 V @ 400 mA | 50 nA @ 300 V | — | — | -65°C ~ 175°C | — |
|
1N646/TR
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Standard Recovery >500ns, > 200mA (Io) | 300 V | Standard | 400mA | 1 V @ 400 mA | 200 nA @ 300 V | — | — | -65°C ~ 175°C | — |
|
1N646UR-1
SILICON SWITCHING DIODES |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N647
D-SI 400V .4A |
NTE Electronics, Inc. | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | — | 1 V @ 400 mA | — | — | — | — | — |
|
1N647
SILICON SWITCHING DIODES |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | — | 1 V @ 400 mA | — | — | — | — | — |
|
1N647 BK
TRANSISTOR |
Central Semiconductor | Obsolete | Through Hole | DO-204AA, DO-7, Axial | DO-7 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 400mA | 1 V @ 400 mA | 200 nA @ 400 V | — | — | -65°C ~ 175°C | — |
|
1N647-1
DIODE GEN PURP 400V 400MA DO35 |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 400mA | 1 V @ 400 mA | 50 nA @ 400 V | — | — | -65°C ~ 175°C | — |
|
1N647-1/TR
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 400mA | 1 V @ 400 mA | 50 nA @ 400 V | — | — | -65°C ~ 175°C | — |
|
1N647-1E3
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 400mA | 1 V @ 400 mA | 200 nA @ 400 V | — | — | -65°C ~ 175°C | — |
|
1N647-1E3/TR
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 400mA | 1 V @ 400 mA | 200 nA @ 400 V | — | — | -65°C ~ 175°C | — |
|
1N647/TR
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | — | 1 V @ 400 mA | — | — | — | — | — |
|
1N6478-E3/96
DIODE GEN PURP 50V 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 50 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N6478-E3/97
DIODE GEN PURP 50V 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 50 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N6478HE3/96
DIODE GEN PURP 50V 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 50 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N6478HE3/97
DIODE GEN PURP 50V 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 50 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N6479-E3/96
DIODE GEN PURP 100V 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 100 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N6479-E3/97
DIODE GEN PURP 100V 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 100 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N6479HE3/96
DIODE GEN PURP 100V 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 100 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N6479HE3/97
DIODE GEN PURP 100V 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 100 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N647UR-1
DIODE GEN PURP 400V 400MA DO213 |
Microchip Technology | Active | Surface Mount | DO-213AA (Glass) | DO-213AA | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 400mA | 1 V @ 400 mA | 50 nA @ 400 V | — | — | -65°C ~ 175°C | — |
|
1N647UR-1/TR
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Surface Mount | DO-213AA (Glass) | DO-213AA | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 400mA | 1 V @ 400 mA | 50 nA @ 400 V | — | — | -65°C ~ 175°C | — |
|
1N648
SILICON RECTIFIER |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Standard Recovery >500ns, > 200mA (Io) | 500 V | Standard | — | 1 V @ 400 mA | — | — | — | — | — |
|
1N648-1
DIODE GEN PURP 500V 400MA DO35 |
Microchip Technology | Market | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Standard Recovery >500ns, > 200mA (Io) | 500 V | Standard | 400mA | 1 V @ 400 mA | 50 nA @ 500 V | — | — | -65°C ~ 175°C | — |
|
1N6480-E3/96
DIODE GEN PURP 200V 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 200 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N6480-E3/97
DIODE GEN PURP 200V 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 200 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N6480HE3/96
DIODE GEN PURP 200V 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 200 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N6480HE3/97
DIODE GEN PURP 200V 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 200 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |