Diyotlar - Doğrultucular - Tekil
- Komponent
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Komponentler
10,000 sonuç · Sayfa 93/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N6481-E3/96
DIODE GEN PURP 400V 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 400 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N6481-E3/97
DIODE GEN PURP 400V 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 400 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N6481HE3/96
DIODE GEN PURP 400V 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 400 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N6481HE3/97
DIODE GEN PURP 400V 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 400 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N6482-E3/96
DIODE GEN PURP 600V 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 600 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N6482-E3/97
DIODE GEN PURP 600V 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 600 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N6482HE3/96
DIODE GEN PURP 600V 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 600 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N6482HE3/97
DIODE GEN PURP 600V 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 600 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N6483-E3/96
DIODE GEN PURP 800V 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 800 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N6483-E3/97
DIODE GEN PURP 800V 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 800 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N6483HE3/96
DIODE GEN PURP 800V 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 800 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N6483HE3/97
DIODE GEN PURP 800V 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 800 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N6484-E3/96
DIODE GEN PURP 1KV 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 1000 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N6484-E3/97
DIODE GEN PURP 1KV 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 1000 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N6484HE3/96
DIODE GEN PURP 1KV 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 1000 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N6484HE3/97
DIODE GEN PURP 1KV 1A DO213AB |
Vishay | Active | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 1000 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N649 BK
TRANSISTOR |
Central Semiconductor | Obsolete | Through Hole | DO-204AA, DO-7, Axial | DO-7 | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 400mA | 1 V @ 400 mA | 200 nA @ 600 V | — | — | -65°C ~ 175°C | — |
|
1N649-1/TR
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 400mA | 1 V @ 400 mA | 50 nA @ 600 V | — | — | -65°C ~ 175°C | — |
|
1N6491
ZENER DIODE |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 400mA | 1 V @ 400 mA | 50 nA @ 600 V | — | — | -65°C ~ 175°C | — |
|
1N649UR-1
DIODE GEN PURP 600V 400MA DO213 |
Microchip Technology | Active | Surface Mount | DO-213AA (Glass) | DO-213AA | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 400mA | 1 V @ 400 mA | 50 nA @ 600 V | — | — | -65°C ~ 175°C | — |
|
1N649UR-1/TR
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Surface Mount | DO-213AA (Glass) | DO-213AA | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 400mA | 1 V @ 400 mA | 50 nA @ 600 V | — | — | -65°C ~ 175°C | — |
|
1N6536
DIODE GEN PURP 400V 1A A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 1A (DC) | 1.5 V @ 1 A | 10 µA @ 400 V | — | 30 ns | — | — |
|
1N6537
DIODE RECT ULT FAST REC A-PKG |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6538
DIODE RECT ULT FAST REC A-PKG |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6538/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6539
DIODE RECT ULT FAST REC A-PKG |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6539/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6540
DIODE RECT ULT FAST REC A-PKG |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6540/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6541
DIODE RECT ULT FAST REC A-PKG |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6542
DIODE RECT ULT FAST REC A-PKG |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6543
DIODE RECT ULT FAST REC A-PKG |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6543/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6544
DIODE RECT ULT FAST REC A-PKG |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6544/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6545
DIODE RECT ULT FAST REC A-PKG |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6545/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6546
DIODE RECT ULT FAST REC A-PKG |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6547
DIODE RECT ULT FAST REC A-PKG |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6548
DIODE RECT ULT FAST REC A-PKG |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6549
DIODE RECT ULT FAST REC A-PKG |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N6620
DIODE GEN PURP 220V 1.2A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 220 V | Standard | 1.2A | 1.4 V @ 1.2 A | 500 nA @ 220 V | 10pF @ 10V, 1MHz | 30 ns | -65°C ~ 150°C | — |
|
1N6620/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 220 V | Standard | 1.2A | 1.4 V @ 1.2 A | 500 nA @ 220 V | 10pF @ 10V, 1MHz | 30 ns | -65°C ~ 150°C | — |
|
1N6620E3
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | Axial | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1.2A | 1.4 V @ 1.2 A | 500 nA @ 200 V | — | 30 ns | -65°C ~ 150°C | — |
|
1N6620E3/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | Axial | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1.2A | 1.4 V @ 1.2 A | 500 nA @ 200 V | — | 30 ns | -65°C ~ 150°C | — |
|
1N6620US
DIODE GEN PURP 220V 1.2A A-MELF |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 220 V | Standard | 1.2A | 1.4 V @ 1.2 A | 500 nA @ 220 V | 10pF @ 10V, 1MHz | 30 ns | -65°C ~ 150°C | — |
|
1N6620US/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 220 V | Standard | 1.2A | 1.4 V @ 1.2 A | 500 nA @ 220 V | 10pF @ 10V, 1MHz | 30 ns | -65°C ~ 150°C | — |
|
1N6621
DIODE GEN PURP 440V 1.2A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 440 V | Standard | 1.2A | 1.4 V @ 1.2 A | 500 nA @ 440 V | 10pF @ 10V, 1MHz | 30 ns | -65°C ~ 150°C | — |
|
1N6621/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 440 V | Standard | 1.2A | 1.4 V @ 1.2 A | 500 nA @ 440 V | 10pF @ 10V, 1MHz | 30 ns | -65°C ~ 150°C | — |
|
1N6621US
DIODE GEN PURP 440V 1.2A A-MELF |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 440 V | Standard | 1.2A | 1.4 V @ 1.2 A | 500 nA @ 440 V | 10pF @ 10V, 1MHz | 30 ns | -65°C ~ 150°C | — |