Diyotlar - Doğrultucular - Tekil
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Komponentler
10,000 sonuç · Sayfa 85/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5806USE3
UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 1A | 975 mV @ 2.5 A | 1 µA @ 150 V | 25pF @ 10V, 1MHz | 25 ns | -65°C ~ 175°C | — |
|
1N5806USE3/TR
UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 1A | 975 mV @ 2.5 A | 1 µA @ 150 V | 25pF @ 10V, 1MHz | 25 ns | -65°C ~ 175°C | — |
|
1N5807
DIODE GEN PURP 50V 3A AXIAL |
Microchip Technology | Active | Through Hole | B, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 3A | 875 mV @ 4 A | 5 µA @ 50 V | 60pF @ 10V, 1MHz | 30 ns | -65°C ~ 175°C | — |
|
1N5807
DIODE GEN PURP 50V 6A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 6A | 875 mV @ 4 A | 5 µA @ 50 V | 60pF @ 5V, 1MHz | 30 ns | — | — |
|
1N5807
G4 6 AMP RECTIFIER |
Solid State Inc. | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 6A | 875 mV @ 4 A | 5 µA @ 50 V | — | 30 ns | -65°C ~ 175°C | — |
|
1N5807/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | B, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 3A | 875 mV @ 4 A | 5 µA @ 50 V | 60pF @ 10V, 1MHz | 30 ns | -65°C ~ 175°C | — |
|
1N5807US
DIODE GEN PURP 50V 6A |
Semtech | Active | Surface Mount | SQ-MELF | — | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 6A | 875 mV @ 4 A | 5 µA @ 50 V | 60pF @ 5V, 1MHz | 30 ns | — | — |
|
1N5807US
DIODE GEN PURP 50V 3A B-MELF |
Microchip Technology | Market | Surface Mount | SQ-MELF, B | B, SQ-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 3A | 875 mV @ 4 A | 5 µA @ 50 V | 60pF @ 10V, 1MHz | 30 ns | -65°C ~ 175°C | — |
|
1N5807US/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, B | B, SQ-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 3A | 875 mV @ 4 A | 5 µA @ 50 V | 60pF @ 10V, 1MHz | 30 ns | -65°C ~ 175°C | — |
|
1N5808
DIODE RECT ULT FAST REC B-PKG |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N5808
G4 6 AMP RECTIFIER |
Solid State Inc. | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 75 V | Standard | 6A | 875 mV @ 4 A | 5 µA @ 75 V | — | 30 ns | -65°C ~ 175°C | — |
|
1N5808/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N5809
DIODE GEN PURP 100V 3A AXIAL |
Microchip Technology | Active | Through Hole | B, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 3A | 875 mV @ 4 A | 5 µA @ 100 V | 60pF @ 10V, 1MHz | 30 ns | -65°C ~ 175°C | — |
|
1N5809
DIODE GEN PURP 100V 6A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 6A | 875 mV @ 4 A | 5 µA @ 100 V | 60pF @ 5V, 1MHz | 30 ns | — | — |
|
1N5809
G4 6 AMP RECTIFIER |
Solid State Inc. | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 6A | 875 mV @ 4 A | 5 µA @ 100 V | — | 30 ns | -65°C ~ 175°C | — |
|
1N5809/TR
UFR,FRR |
Microchip Technology | Active | Through Hole | B, Axial | B, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 3A | 875 mV @ 4 A | 5 µA @ 100 V | 60pF @ 10V, 1MHz | 30 ns | -65°C ~ 175°C | — |
|
1N5809E3
RECTIFIER DIODE |
Microchip Technology | Active | Through Hole | B, Axial | B, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 6A | 875 mV @ 4 A | — | — | 30 ns | -65°C ~ 175°C | — |
|
1N5809E3/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | B, Axial | B, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 6A | 875 mV @ 4 A | — | — | 30 ns | -65°C ~ 175°C | — |
|
1N5809US
DIODE GEN PURP 100V 3A B-MELF |
Microchip Technology | Active | Surface Mount | SQ-MELF, B | B, SQ-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 3A | 875 mV @ 4 A | 5 µA @ 100 V | 60pF @ 10V, 1MHz | 30 ns | -65°C ~ 175°C | — |
|
1N5809US
DIODE GEN PURP 100V 6A |
WEC | Active | Surface Mount | SQ-MELF | — | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 6A | 875 mV @ 4 A | 5 µA @ 100 V | 60pF @ 5V, 1MHz | 30 ns | — | — |
|
1N5809US.TR
DIODE GEN PURP 100V 6A |
Semtech | Active | Surface Mount | SQ-MELF | — | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 6A | 875 mV @ 4 A | 5 µA @ 100 V | 60pF @ 5V, 1MHz | 30 ns | — | — |
|
1N5809US/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, B | B, SQ-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 3A | 875 mV @ 4 A | 5 µA @ 100 V | 60pF @ 10V, 1MHz | 30 ns | -65°C ~ 175°C | — |
|
1N5810
G4 6 AMP RECTIFIER |
Solid State Inc. | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 125 V | Standard | 6A | 875 mV @ 4 A | 5 µA @ 125 V | — | 30 ns | -65°C ~ 175°C | — |
|
1N5811
G 4 6 AMP SILICON RECTIFIER |
Solid State Inc. | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 6A | 875 mV @ 4 A | 5 µA @ 150 V | — | 30 ns | -65°C ~ 175°C | — |
|
1N5811
DIODE GEN PURP 150V 6A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 6A | 875 mV @ 4 A | 5 µA @ 150 V | 60pF @ 5V, 1MHz | 30 ns | — | — |
|
1N5811
RECTIFIER UFR,FRR |
WEC | Active | Through Hole | B, Axial | B, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 3A | 875 mV @ 4 A | 5 µA @ 150 V | 60pF @ 10V, 1MHz | 30 ns | -65°C ~ 175°C | — |
|
1N5811C.TR
DIODE GEN PURP 150V 6A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 6A | 875 mV @ 4 A | 5 µA @ 150 V | 60pF @ 5V, 1MHz | 30 ns | -65°C ~ 175°C | — |
|
1N5811E3
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | B, Axial | B, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 3A | 875 mV @ 4 A | 5 µA @ 150 V | 60pF @ 10V, 1MHz | 30 ns | -65°C ~ 175°C | — |
|
1N5811E3/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | B, Axial | B, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 3A | 875 mV @ 4 A | 5 µA @ 150 V | 60pF @ 10V, 1MHz | 30 ns | -65°C ~ 175°C | — |
|
1N5811TR
DIODE GEN PURP 150V 6A AXIAL |
Microchip Technology | Active | Through Hole | B, Axial | B, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 6A | 875 mV @ 4 A | 5 µA @ 150 V | 60pF @ 10V, 1MHz | 30 ns | -65°C ~ 175°C | — |
|
1N5811US
DIODE GEN PURP 150V 3A B-MELF |
Microchip Technology | Active | Surface Mount | SQ-MELF, B | B, SQ-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 3A | 875 mV @ 4 A | 5 µA @ 50 V | 60pF @ 10V, 1MHz | 30 ns | -65°C ~ 175°C | — |
|
1N5811US
DIODE GEN PURP 150V 6A |
Semtech | Active | Surface Mount | SQ-MELF | — | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 6A | 875 mV @ 4 A | 5 µA @ 150 V | 60pF @ 5V, 1MHz | 30 ns | — | — |
|
1N5811US/TR
UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, B | B, SQ-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 3A | 875 mV @ 4 A | 5 µA @ 150 V | 60pF @ 10V, 1MHz | 30 ns | -65°C ~ 175°C | — |
|
1N5811USE3
RECTIFIER DIODE |
Microchip Technology | Active | Surface Mount | SQ-MELF, B | B, SQ-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 3A | 875 mV @ 4 A | — | — | 30 ns | -65°C ~ 175°C | — |
|
1N5811USE3/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, B | B, SQ-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 3A | 875 mV @ 4 A | — | — | 30 ns | -65°C ~ 175°C | — |
|
1N5812
DIODE GEN PURP 50V 20A DO203AA |
Microchip Technology | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 20A | 950 mV @ 20 A | 10 µA @ 50 V | 300pF @ 10V, 1MHz | 15 ns | -65°C ~ 175°C | — |
|
1N5812
DO4 20 AMP RECTIFIER |
Solid State Inc. | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 20A | 900 mV @ 10 A | 10 µA @ 50 V | — | 35 ns | -65°C ~ 175°C | — |
|
1N5812R
RECTIFIER DIODE |
Microchip Technology | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 20A | 950 mV @ 20 A | 10 µA @ 50 V | 300pF @ 10V, 1MHz | 35 ns | -65°C ~ 175°C | — |
|
1N5813
RECTIFIER DIODE |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N5813
DO4 20 AMP RECTIFIER |
Solid State Inc. | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 75 V | Standard | 20A | 900 mV @ 10 A | 10 µA @ 75 V | — | 35 ns | -65°C ~ 175°C | — |
|
1N5813R
RECTIFIER DIODE |
Microchip Technology | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | Fast Recovery =< 500ns, > 200mA (Io) | 75 V | Standard | 20A | — | 10 µA @ 75 V | — | 35 ns | -55°C ~ 175°C | — |
|
1N5814
DIODE GEN PURP 100V 20A DO203AA |
Microchip Technology | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 20A | 950 mV @ 20 A | 10 µA @ 100 V | 300pF @ 10V, 1MHz | 35 ns | -65°C ~ 175°C | — |
|
1N5814
DO4 20 AMP RECTIFIER |
Solid State Inc. | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 20A | 900 mV @ 10 A | 10 µA @ 100 V | — | 35 ns | -65°C ~ 175°C | — |
|
1N5814R
DO4 20 AMP RECTIFIER |
Solid State Inc. | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 20A | 900 mV @ 10 A | 10 µA @ 100 V | — | 35 ns | -65°C ~ 175°C | — |
|
1N5814R
RECTIFIER DIODE |
Microchip Technology | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 20A | 950 mV @ 20 A | 10 µA @ 100 V | 300pF @ 10V, 1MHz | 35 ns | -65°C ~ 175°C | — |
|
1N5815
RECTIFIER DIODE |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N5815
DO4 20 AMP RECTIFIER |
Solid State Inc. | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 125 V | Standard | 20A | 900 mV @ 10 A | 10 µA @ 125 V | — | 35 ns | -65°C ~ 175°C | — |
|
1N5815R
RECTIFIER DIODE |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N5815R
DO4 20 AMP RECTIFIER |
Solid State Inc. | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 125 V | Standard | 20A | 900 mV @ 10 A | 10 µA @ 125 V | — | 35 ns | -65°C ~ 175°C | — |
|
1N5816
RECTIFIER DIODE |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |