Diyotlar - Doğrultucular - Tekil
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Komponentler
10,000 sonuç · Sayfa 84/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5711UBD
SCHOTTKY BARRIER DIODE CERAMIC S |
Microchip Technology | Active | Surface Mount | 4-SMD, No Lead | UB | Small Signal =< 200mA (Io), Any Speed | 50 V | Schottky | — | 1 V @ 15 mA | 200 nA @ 50 V | 2pF @ 0V, 1MHz | — | -65°C ~ 150°C | — |
|
1N5711UR-1
SCHOTTKY DIODE |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N5711UR-1/TR
DIODE SMALL-SIGNAL SCHOTTKY |
Microchip Technology | Active | Surface Mount | DO-213AA | DO-213AA | Small Signal =< 200mA (Io), Any Speed | 50 V | Schottky | 33mA | 1 V @ 15 mA | 200 nA @ 50 V | 2pF @ 0V, 1MHz | — | -65°C ~ 150°C | — |
|
1N5711UR-1E3
SCHOTTKY BARRIER DIODE MELF SURF |
Microchip Technology | Active | Surface Mount | DO-213AA | DO-213AA | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Schottky | 33mA | 1 V @ 15 mA | 200 nA @ 50 V | 2pF @ 0V, 1MHz | — | -65°C ~ 150°C | — |
|
1N5711UR-1E3/TR
DIODE SMALL-SIGNAL SCHOTTKY |
Microchip Technology | Active | Surface Mount | DO-213AA | DO-213AA | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Schottky | 33mA | 1 V @ 15 mA | 200 nA @ 50 V | 2pF @ 0V, 1MHz | — | -65°C ~ 150°C | — |
|
1N5712
DIODE SCHOTTKY 20V 75MA DO35 |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Small Signal =< 200mA (Io), Any Speed | 20 V | Schottky | 75mA | 1 V @ 35 mA | 150 nA @ 16 V | 2pF @ 0V, 1MHz | — | -65°C ~ 150°C | — |
|
1N5712-1
SCHOTTKY DIODE |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N5712-1/TR
DIODE SMALL-SIGNAL SCHOTTKY |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Small Signal =< 200mA (Io), Any Speed | 20 V | Schottky | 75mA | 1 V @ 35 mA | 150 nA @ 16 V | 2pF @ 0V, 1MHz | — | -65°C ~ 150°C | — |
|
1N5712-1E3
DIODE SMALL-SIGNAL SCHOTTKY |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Small Signal =< 200mA (Io), Any Speed | 20 V | Schottky | 75mA | 1 V @ 35 mA | 150 nA @ 16 V | 2pF @ 0V, 1MHz | — | -65°C ~ 150°C | — |
|
1N5712-1E3/TR
DIODE SMALL-SIGNAL SCHOTTKY |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Small Signal =< 200mA (Io), Any Speed | 20 V | Schottky | 75mA | 1 V @ 35 mA | 150 nA @ 16 V | 2pF @ 0V, 1MHz | — | -65°C ~ 150°C | — |
|
1N5712/TR
DIODE SMALL-SIGNAL SCHOTTKY |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Small Signal =< 200mA (Io), Any Speed | 20 V | Schottky | 75mA | 1 V @ 35 mA | 150 nA @ 16 V | 2pF @ 0V, 1MHz | — | -65°C ~ 150°C | — |
|
1N5712UB
SCHOTTKY DIODE |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N5712UBCA
SCHOTTKY BARRIER DIODE CERAMIC S |
Microchip Technology | Active | Surface Mount | 4-SMD, No Lead | UB | Small Signal =< 200mA (Io), Any Speed | 16 V | Schottky | — | 1 V @ 35 mA | 150 nA @ 16 V | 2pF @ 0V, 1MHz | — | -65°C ~ 150°C | — |
|
1N5712UBCC
SCHOTTKY DIODE |
Microchip Technology | Active | Surface Mount | 3-SMD, No Lead | UB | Small Signal =< 200mA (Io), Any Speed | 16 V | Schottky | 75mA (DC) | 1 V @ 35 mA | 150 nA @ 16 V | 2pF @ 0V, 1MHz | — | -65°C ~ 150°C | — |
|
1N5712UBD
SCHOTTKY BARRIER DIODE CERAMIC S |
Microchip Technology | Active | Surface Mount | 4-SMD, No Lead | UB | Small Signal =< 200mA (Io), Any Speed | 16 V | Schottky | — | 1 V @ 35 mA | 150 nA @ 16 V | 2pF @ 0V, 1MHz | — | -65°C ~ 150°C | — |
|
1N5712UR-1
SCHOTTKY DIODE |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N5712UR-1/TR
DIODE SMALL-SIGNAL SCHOTTKY |
Microchip Technology | Active | Surface Mount | DO-213AA | DO-213AA | Small Signal =< 200mA (Io), Any Speed | 16 V | Schottky | 75mA | 1 V @ 35 mA | 150 nA @ 16 V | 2pF @ 0V, 1MHz | — | -65°C ~ 150°C | — |
|
1N5802
DIODE GEN PURP 50V 1A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 875 mV @ 1 A | 1 µA @ 50 V | 25pF @ 10V, 1MHz | 25 ns | -65°C ~ 175°C | — |
|
1N5802
DIODE GEN PURP 50V 3.3A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 3.3A | 875 mV @ 1 A | 1 µA @ 50 V | 25pF @ 5V, 1MHz | 25 ns | -65°C ~ 175°C | — |
|
1N5802
DO-204AP 2.5 AMP RECTIFIER |
Solid State Inc. | Active | Through Hole | DO-204AP, Axial | DO-204AP | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 2.5A | 875 mV @ 1 A | 1 µA @ 50 V | — | 25 ns | -65°C ~ 175°C | — |
|
1N5802/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 875 mV @ 1 A | 1 µA @ 50 V | 25pF @ 10V, 1MHz | 25 ns | -65°C ~ 175°C | — |
|
1N5802US
DIODE GEN PURP 50V 1A D5A |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 875 mV @ 1 A | 1 µA @ 50 V | 25pF @ 10V, 1MHz | 25 ns | -65°C ~ 175°C | — |
|
1N5802US
DIODE GEN PURP 50V 1.1A |
Semtech | Active | Surface Mount | SQ-MELF | — | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1.1A | 875 mV @ 1 A | 1 µA @ 50 V | 25pF @ 5V, 1MHz | 25 ns | — | — |
|
1N5802US/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 875 mV @ 1 A | 1 µA @ 50 V | 25pF @ 10V, 1MHz | 25 ns | -65°C ~ 175°C | — |
|
1N5803
DO-204AP 2.5 AMP RECTIFIER |
Solid State Inc. | Active | Through Hole | DO-204AP, Axial | DO-204AP | Fast Recovery =< 500ns, > 200mA (Io) | 75 V | Standard | 2.5A | 875 mV @ 1 A | 1 µA @ 75 V | — | 25 ns | -65°C ~ 175°C | — |
|
1N5803
DIODE GEN PURP 75V 1A AXIAL |
Microchip Technology | Obsolete | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 75 V | Standard | 1A | 875 mV @ 1 A | 1 µA @ 75 V | 25pF @ 10V, 1MHz | 25 ns | -65°C ~ 175°C | — |
|
1N5803/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 75 V | Standard | 1A | 875 mV @ 1 A | 1 µA @ 75 V | 25pF @ 10V, 1MHz | 25 ns | -65°C ~ 175°C | — |
|
1N5804
DIODE GEN PURP 100V 1A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 875 mV @ 1 A | 1 µA @ 100 V | 25pF @ 10V, 1MHz | 25 ns | -65°C ~ 175°C | — |
|
1N5804
RECT 2.5 AMP 100V DO204AP |
Solid State Inc. | Active | Through Hole | DO-204AP, Axial | DO-204AP | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 2.5A | 875 mV @ 1 A | 1 µA @ 100 V | — | 25 ns | -65°C ~ 175°C | — |
|
1N5804
DIODE GEN PURP 100V 3.3A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 3.3A | 875 mV @ 1 A | 1 µA @ 100 V | 25pF @ 5V, 1MHz | 25 ns | -65°C ~ 175°C | — |
|
1N5804/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 875 mV @ 1 A | 1 µA @ 100 V | 25pF @ 10V, 1MHz | 25 ns | -65°C ~ 175°C | — |
|
1N5804E3
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | Axial | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 875 mV @ 1 A | 1 µA @ 100 V | 25pF @ 10V, 1MHz | 25 ns | -65°C ~ 175°C | — |
|
1N5804US
DIODE GEN PURP 100V 1A D5A |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 875 mV @ 1 A | 1 µA @ 100 V | 25pF @ 10V, 1MHz | 25 ns | -65°C ~ 175°C | — |
|
1N5804US
DIODE GEN PURP 100V 1.1A |
Semtech | Active | Surface Mount | SQ-MELF | — | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1.1A | 875 mV @ 1 A | 1 µA @ 100 V | 25pF @ 5V, 1MHz | 25 ns | — | — |
|
1N5804US/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 875 mV @ 1 A | 1 µA @ 100 V | 25pF @ 10V, 1MHz | 25 ns | -65°C ~ 175°C | — |
|
1N5804USE3
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | A, SQ-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 875 mV @ 1 A | 1 µA @ 100 V | 25pF @ 10V, 1MHz | 25 ns | -65°C ~ 175°C | — |
|
1N5804USE3/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | A, SQ-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 875 mV @ 1 A | 1 µA @ 100 V | 25pF @ 10V, 1MHz | 25 ns | -65°C ~ 175°C | — |
|
1N5805
DO-204AP 2.5 AMP RECTIFIER |
Solid State Inc. | Active | Through Hole | DO-204AP, Axial | DO-204AP | Fast Recovery =< 500ns, > 200mA (Io) | 125 V | Standard | 2.5A | 875 mV @ 1 A | 1 µA @ 125 V | — | 25 ns | -65°C ~ 175°C | — |
|
1N5805
DIODE GEN PURP 125V 1A AXIAL |
Microchip Technology | Market | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 125 V | Standard | 1A | 875 mV @ 1 A | 1 µA @ 125 V | 25pF @ 10V, 1MHz | 25 ns | -65°C ~ 125°C | — |
|
1N5805/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 125 V | Standard | 1A | 875 mV @ 1 A | 1 µA @ 125 V | 25pF @ 10V, 1MHz | 25 ns | -65°C ~ 125°C | — |
|
1N5806
DO-204AP 2.5 AMP RECTIFIER |
Solid State Inc. | Active | Through Hole | DO-204AP, Axial | DO-204AP | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 2.5A | 875 mV @ 1 A | 1 µA @ 150 V | — | 25 ns | -65°C ~ 175°C | — |
|
1N5806
RECTIFIER UFR,FRR |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N5806
DIODE GEN PURP 150V 3.3A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 3.3A | 875 mV @ 1 A | 1 µA @ 150 V | 25pF @ 5V, 1MHz | 25 ns | -65°C ~ 175°C | — |
|
1N5806C.TR
DIODE GEN PURP 150V 2.5A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 2.5A | 875 mV @ 1 A | 1 µA @ 150 V | 25pF @ 5V, 1MHz | 25 ns | -65°C ~ 175°C | — |
|
1N5806E3
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | Axial | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 1A | 875 mV @ 1 A | 1 µA @ 150 V | 25pF @ 10V, 1MHz | 25 ns | -65°C ~ 175°C | — |
|
1N5806E3/TR
UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 2.5A | 975 mV @ 2.5 A | 1 µA @ 150 V | 25pF @ 10V, 1MHz | 25 ns | -65°C ~ 175°C | — |
|
1N5806TR
DIODE GEN PURP 150V 2.5A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | A-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 2.5A | 875 mV @ 1 A | 1 µA @ 150 V | 25pF @ 10V, 1MHz | 25 ns | -65°C ~ 175°C | — |
|
1N5806US
DIODE GEN PURP 150V 1A D5A |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 1A | 875 mV @ 1 A | 1 µA @ 150 V | 25pF @ 10V, 1MHz | 25 ns | -65°C ~ 175°C | — |
|
1N5806US
DIODE GEN PURP 150V 1.1A |
Semtech | Active | Surface Mount | SQ-MELF | — | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 1.1A | 875 mV @ 1 A | 1 µA @ 150 V | 25pF @ 5V, 1MHz | 25 ns | — | — |
|
1N5806US/TR
UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 1A | 975 mV @ 2.5 A | 1 µA @ 150 V | 25pF @ 10V, 1MHz | 25 ns | -65°C ~ 175°C | — |