Diyotlar - Doğrultucular - Tekil
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Komponentler
10,000 sonuç · Sayfa 81/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5550USE3
STD RECTIFIER |
Microchip Technology | Active | Surface Mount | SQ-MELF, B | B, SQ-MELF | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 3A | 1.2 V @ 9 A | 1 µA @ 200 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N5550USE3/TR
STD RECTIFIER |
Microchip Technology | Active | Surface Mount | SQ-MELF, B | B, SQ-MELF | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 3A | 1.2 V @ 9 A | 1 µA @ 200 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N5551
RECT 3AMP 400V G4 |
Solid State Inc. | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 3A | 1 V @ 3 A | 1 µA @ 400 V | 120pF @ 12V, 1MHz | 2 µs | -65°C ~ 200°C | — |
|
1N5551
DIODE GEN PURP 400V 3A AXIAL |
Microchip Technology | Active | Through Hole | B, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 3A | 1.2 V @ 9 A | 1 µA @ 400 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N5551
DIODE GEN PURP 400V 5A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 5A | 1 V @ 3 A | 1 µA @ 400 V | 92pF @ 5V, 1MHz | 2 µs | — | — |
|
1N5551C.TR
DIODE GEN PURP 400V 3A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 5A | 1 V @ 3 A | 1 µA @ 400 V | 92pF @ 5V, 1MHz | 2 µs | — | — |
|
1N5551US
DIODE GEN PURP 400V 3A D5B |
Microchip Technology | Active | Surface Mount | SQ-MELF, B | D-5B | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 3A | 1.2 V @ 9 A | 1 µA @ 400 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N5551US
DIODE GEN PURP 400V 5A |
Semtech | Active | Surface Mount | SQ-MELF | — | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 5A | 1 V @ 3 A | 1 µA @ 400 V | 92pF @ 5V, 1MHz | 2 µs | — | — |
|
1N5551USE3
STD RECTIFIER |
Microchip Technology | Active | Surface Mount | SQ-MELF, B | B, SQ-MELF | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 3A | 1.2 V @ 9 A | 1 µA @ 400 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N5551USE3/TR
STD RECTIFIER |
Microchip Technology | Active | Surface Mount | SQ-MELF, B | B, SQ-MELF | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 3A | 1.2 V @ 9 A | 1 µA @ 400 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N5552
DIODE GEN PURP 600V 3A AXIAL |
Microchip Technology | Active | Through Hole | B, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1.2 V @ 9 A | 1 µA @ 600 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N5552
DIODE GEN PURP 600V 5A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 5A | 1 V @ 3 A | 1 µA @ 600 V | 92pF @ 5V, 1MHz | 2 µs | — | — |
|
1N5552
RECT 3AMP 600V G4 |
Solid State Inc. | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1 V @ 3 A | 1 µA @ 600 V | 100pF @ 12V, 1MHz | 2 µs | -65°C ~ 200°C | — |
|
1N5552/TR
STD RECTIFIER |
Microchip Technology | Active | Through Hole | B, Axial | B, Axial | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1.2 V @ 9 A | 1 µA @ 600 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N5552C.TR
DIODE GEN PURP 600V 5A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 5A | 1 V @ 3 A | 1 µA @ 600 V | 92pF @ 5V, 1MHz | 2 µs | — | — |
|
1N5552E3
STANDARD RECTIFIER |
Microchip Technology | Active | Through Hole | B, Axial | B, Axial | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 5A | 1.2 V @ 9 A | — | — | 2 µs | -65°C ~ 175°C | — |
|
1N5552US
DIODE GEN PURP 600V 3A D5B |
WEC | Active | Surface Mount | SQ-MELF, B | D-5B | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1.2 V @ 9 A | 1 µA @ 600 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N5552US/TR
STD RECTIFIER |
Microchip Technology | Active | Surface Mount | SQ-MELF, E | D-5B | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1.2 V @ 9 A | 1 µA @ 600 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N5553
RECT 3AMP 800V G4 |
Solid State Inc. | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1.1 V @ 3 A | 1 µA @ 800 V | 90pF @ 12V, 1MHz | 4 µs | -65°C ~ 200°C | — |
|
1N5553
DIODE GEN PURP 800V 3A AXIAL |
Microchip Technology | Active | Through Hole | B, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1.2 V @ 9 A | 1 µA @ 800 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N5553
DIODE GEN PURP 800V 5A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 5A | 1 V @ 3 A | 1 µA @ 800 V | 92pF @ 5V, 1MHz | 2 µs | — | — |
|
1N5553C.TR
DIODE GEN PURP 800V 3A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 5A | 1 V @ 3 A | 1 µA @ 800 V | 92pF @ 5V, 1MHz | 2 µs | — | — |
|
1N5553US
DIODE GEN PURP 800V 3A B-MELF |
Microchip Technology | Active | Surface Mount | SQ-MELF, B | B, SQ-MELF | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1.2 V @ 9 A | 1 µA @ 800 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N5553US
DIODE GEN PURP 800V 5A |
Semtech | Active | Surface Mount | SQ-MELF | — | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 5A | 1 V @ 3 A | 1 µA @ 800 V | 92pF @ 5V, 1MHz | 2 µs | — | — |
|
1N5554
RECT 3AMP 1K V G4 |
Solid State Inc. | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1.1 V @ 3 A | 1 µA @ 1000 V | 85pF @ 12V, 1MHz | 4 µs | -65°C ~ 200°C | — |
|
1N5554
DIODE GEN PURP 1KV 3A AXIAL |
Microchip Technology | Active | Through Hole | B, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1.2 V @ 9 A | 1 µA @ 1000 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N5554
DIODE GEN PURP 1KV 5A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 5A | 1 V @ 3 A | 1 µA @ 1000 V | 92pF @ 5V, 1MHz | 2 µs | — | — |
|
1N5554C.TR
DIODE GEN PURP 1KV 5A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 5A | 1 V @ 3 A | 1 µA @ 1000 V | 92pF @ 5V, 1MHz | 2 µs | — | — |
|
1N5554US
DIODE GEN PURP 1KV 3A B-MELF |
Microchip Technology | Active | Surface Mount | SQ-MELF, B | B, SQ-MELF | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1.2 V @ 9 A | 1 µA @ 1000 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N5554US
DIODE GEN PURP 1KV 5A |
Semtech | Active | Surface Mount | SQ-MELF | — | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 5A | 1 V @ 3 A | 1 µA @ 1000 V | 92pF @ 5V, 1MHz | 2 µs | — | — |
|
1N5554US/TR
STD RECTIFIER |
Microchip Technology | Active | Surface Mount | SQ-MELF, E | D-5B | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1.3 V @ 9 A | 1 µA @ 1000 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N5614
DIODE GEN PURP 200V 1A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.3 V @ 3 A | 500 nA @ 200 V | — | 2 µs | -65°C ~ 200°C | — |
|
1N5614
DIODE GEN PURP 200V 2A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 2A | 1.1 V @ 1 A | 500 nA @ 200 V | 23pF @ 5V, 1MHz | 2 µs | -65°C ~ 175°C | — |
|
1N5614/TR
STD RECTIFIER |
Microchip Technology | Active | Through Hole | A, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.3 V @ 3 A | 500 nA @ 200 V | — | 2 µs | -65°C ~ 200°C | — |
|
1N5614GP-E3/54
DIODE GEN PURP 200V 1A DO204AC |
Vishay | Obsolete | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 500 nA @ 200 V | 45pF @ 12V, 1MHz | 2 µs | -65°C ~ 175°C | ✓ |
|
1N5614GP-E3/73
DIODE GEN PURP 200V 1A DO204AC |
Vishay | Obsolete | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 500 nA @ 200 V | 45pF @ 12V, 1MHz | 2 µs | -65°C ~ 175°C | — |
|
1N5614GPHE3/54
DIODE GEN PURP 200V 1A DO204AC |
Vishay | Obsolete | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 500 nA @ 200 V | 45pF @ 12V, 1MHz | 2 µs | -65°C ~ 175°C | ✓ |
|
1N5614US
DIODE GEN PURP 200V 1A D5A |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.3 V @ 3 A | 500 nA @ 200 V | — | 2 µs | -65°C ~ 200°C | — |
|
1N5614US/TR
STD RECTIFIER |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.3 V @ 3 A | 500 nA @ 200 V | — | 2 µs | -65°C ~ 200°C | — |
|
1N5615
DIODE GEN PURP 200V 1A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.6 V @ 3 A | 500 nA @ 200 V | 45pF @ 12V, 1MHz | 150 ns | -65°C ~ 175°C | — |
|
1N5615
DIODE GEN PURP 200V 2A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 2A | 1.2 V @ 1 A | 500 nA @ 200 V | 27pF @ 5V, 1MHz | 150 ns | -65°C ~ 175°C | — |
|
1N5615/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.6 V @ 3 A | 500 nA @ 200 V | 45pF @ 12V, 1MHz | 150 ns | -65°C ~ 175°C | — |
|
1N5615E3
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | Axial | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.6 V @ 3 A | 500 nA @ 200 V | 45pF @ 12V, 1MHz | 150 ns | -65°C ~ 175°C | — |
|
1N5615E3/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | Axial | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.6 V @ 3 A | 500 nA @ 200 V | 45pF @ 12V, 1MHz | 150 ns | -65°C ~ 175°C | — |
|
1N5615GP-E3/54
DIODE GEN PURP 200V 1A DO204AC |
Vishay | Active | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 500 nA @ 200 V | 25pF @ 4V, 1MHz | 150 ns | -65°C ~ 175°C | ✓ |
|
1N5615GP-E3/73
DIODE GEN PURP 200V 1A DO204AC |
Vishay | Active | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 500 nA @ 200 V | 25pF @ 4V, 1MHz | 150 ns | -65°C ~ 175°C | ✓ |
|
1N5615GPHE3/54
DIODE GEN PURP 200V 1A DO204AC |
Vishay | Obsolete | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 500 nA @ 200 V | 25pF @ 4V, 1MHz | 150 ns | -65°C ~ 175°C | ✓ |
|
1N5615US
DIODE GEN PURP 200V 1A D5A |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.6 V @ 3 A | 500 nA @ 200 V | 45pF @ 12V, 1MHz | 150 ns | -65°C ~ 175°C | — |
|
1N5615US/TR
UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.6 V @ 3 A | 500 nA @ 200 V | 45pF @ 12V, 1MHz | 150 ns | -65°C ~ 175°C | — |
|
1N5616
DIODE GEN PURP 400V 1A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.3 V @ 3 A | 500 nA @ 400 V | — | 2 µs | -65°C ~ 200°C | — |