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Komponentler
10,000 sonuç · Sayfa 78/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5406G
DIODE GP GLASS 600V 3A DO-201AD |
Rectron USA | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 980 mV @ 3 A | 500 nA @ 600 V | 30pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N5406G A0G
DIODE GEN PURP 600V 3A DO201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 600 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5406G B0G
DIODE GEN PURP 600V 3A DO201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 600 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5406G R0G
DIODE GEN PURP 600V 3A DO201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 600 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5406G-T
DIODE GEN PURP 600V 3A DO201AD |
Diodes Incorporated | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 600 V | 40pF @ 4V, 1MHz | 2 µs | -65°C ~ 150°C | ✓ |
|
1N5406GHA0G
DIODE GEN PURP 600V 3A DO201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 600 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5406GHB0G
DIODE GEN PURP 600V 3A DO201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 600 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5406GHR0G
DIODE GEN PURP 600V 3A DO201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 600 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5406GP-AP
DIODE GPP 3A DO-201AD |
Micro Commercial Components (MCC) | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | — | — | 40pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N5406GP-E3/54
DIODE GEN PURP 600V 3A DO201AD |
Vishay | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1.2 V @ 3 A | 5 µA @ 400 V | 30pF @ 4V, 1MHz | — | -50°C ~ 150°C | ✓ |
|
1N5406GP-TP
DIODE GEN PURP 600V 3A DO201AD |
Micro Commercial Components (MCC) | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 600 V | 40pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N5406GTA
DIODE GEN PURP 600V 3A DO201AD |
SMC Diode Solutions | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 600 V | 30pF @ 4V, 1MHz | — | -65°C ~ 150°C | — |
|
1N5406K
DIODE STD DO-15 600V 3A |
Diotec Semiconductor | Active | Through Hole | DO-204AC, DO-15, Axial | DO15/DO204AC | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | — | 10 µA @ 600 V | — | — | -50°C ~ 175°C | — |
|
1N5406K
ST Rect, 600V, 3A |
DComponents | Active | Through Hole | DO-204AC, DO-15, Axial | DO-15 (DO-204AC) | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 600 V | — | 1.5 µs | -50°C ~ 175°C | ✓ |
|
1N5406RL
DIODE GEN PURP 600V 3A DO201AD |
onsemi | Obsolete | Through Hole | DO-201AA, DO-27, Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1 V @ 3 A | 10 µA @ 600 V | — | — | -65°C ~ 170°C | — |
|
1N5406RLG
DIODE GEN PURP 600V 3A DO201AD |
onsemi | Active | Through Hole | DO-201AA, DO-27, Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1 V @ 3 A | 10 µA @ 600 V | — | — | -65°C ~ 150°C | ✓ |
|
1N5406RLG
RECTIFIER DIODE, 3A, 600V |
Rochester Electronics | Active | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1 V @ 3 A | 10 µA @ 600 V | — | — | -65°C ~ 150°C | — |
|
1N5406T-G
DIODE GEN PURP 600V 3A DO201AD |
Comchip Technology | Active | Through Hole | DO-201AD, Axial | DO-27 (DO-201AD) | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 600 V | — | — | -65°C ~ 125°C | — |
|
1N5406TA
DIODE GEN PURP 600V 3A DO201AD |
SMC Diode Solutions | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1.2 V @ 3 A | 5 µA @ 600 V | 30pF @ 0V, 1MHz | — | -65°C ~ 175°C | — |
|
1N5407
R-800 PRV 3A |
NTE Electronics, Inc. | Active | Through Hole | DO-201AA, DO-27, Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1 V @ 3 A | 10 µA @ 800 V | — | — | -65°C ~ 170°C | — |
|
1N5407
RECTIFIER DIODE |
Rochester Electronics | Obsolete | Through Hole | DO-201AA, DO-27, Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1 V @ 3 A | 10 µA @ 800 V | — | — | -65°C ~ 170°C | — |
|
1N5407
Std Rect, 800V, 3A |
DComponents | Active | Through Hole | DO-204AC, DO-15, Axial | DO15/DO204AC | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 800 V | — | 1.5 µs | -50°C ~ 175°C | ✓ |
|
1N5407
DIODE GEN PURP 800V 3A DO201AD |
onsemi | Obsolete | Through Hole | DO-201AA, DO-27, Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1 V @ 3 A | 10 µA @ 800 V | — | — | -65°C ~ 170°C | — |
|
1N5407
DIODE GEN PURP 1000V 3A DO-201AD |
Rectron USA | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1 V @ 3 A | 200 nA @ 1000 V | 30pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N5407-AP
DIODE GPP 3A DO-201AD |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | — | — | 40pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N5407-B
DIODE GEN PURP 800V 3A DO201AD |
Diodes Incorporated | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1 V @ 3 A | 10 µA @ 800 V | 25pF @ 4V, 1MHz | — | -65°C ~ 150°C | ✓ |
|
1N5407-E3/51
DIODE GEN PURP 800V 3A DO201AD |
Vishay | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1.2 V @ 3 A | 5 µA @ 800 V | 30pF @ 4V, 1MHz | — | -50°C ~ 150°C | ✓ |
|
1N5407-E3/54
DIODE GEN PURP 800V 3A DO201AD |
Vishay | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1.2 V @ 3 A | 5 µA @ 800 V | 30pF @ 4V, 1MHz | — | -50°C ~ 150°C | — |
|
1N5407-E3/73
DIODE GEN PURP 800V 3A DO201AD |
Vishay | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1.2 V @ 3 A | 5 µA @ 800 V | 30pF @ 4V, 1MHz | — | -50°C ~ 150°C | ✓ |
|
1N5407-G
DIODE GEN PURP 800V 3A DO201AD |
Comchip Technology | Active | Through Hole | DO-201AD, Axial | DO-27 (DO-201AD) | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 800 V | — | — | -65°C ~ 125°C | — |
|
1N5407-T
DIODE GEN PURP 800V 3A DO201AD |
Diodes Incorporated | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1 V @ 3 A | 10 µA @ 800 V | 25pF @ 4V, 1MHz | — | -65°C ~ 150°C | ✓ |
|
1N5407-TP
DIODE GEN PURP 800V 3A DO201AD |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 800 V | 40pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N5407BULK
STD 3A, CASE TYPE: DO-201AD |
EIC Semiconductor, Inc. | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A (DC) | 950 mV @ 3 A | 5 µA @ 800 V | 28pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N5407G
DIODE GEN PURP 800V 3A AXIAL |
onsemi | Active | Through Hole | DO-201AA, DO-27, Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1 V @ 3 A | 10 µA @ 800 V | — | — | -65°C ~ 150°C | ✓ |
|
1N5407G
DIODE GP GLASS 800V 3A DO-201AD |
Rectron USA | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 980 mV @ 3 A | 500 nA @ 800 V | 30pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N5407G A0G
DIODE GEN PURP 800V 3A DO201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 800 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5407G B0G
DIODE GEN PURP 800V 3A DO201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 800 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5407G R0G
DIODE GEN PURP 800V 3A DO201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 800 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5407G-T
DIODE GEN PURP 800V 3A DO201AD |
Diodes Incorporated | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 800 V | 40pF @ 4V, 1MHz | 2 µs | -65°C ~ 150°C | ✓ |
|
1N5407GH A0G
DIODE GEN PURP 3A 800V DO-201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A (DC) | 1 V @ 3 A | 5 µA @ 800 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5407GHB0G
DIODE GEN PURP 800V 3A DO201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 800 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5407GHR0G
DIODE GEN PURP 800V 3A DO201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 800 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5407GP-AP
DIODE GPP 3A DO-201AD |
Micro Commercial Components (MCC) | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | — | — | 40pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N5407GP-E3/54
DIODE GEN PURP 800V 3A DO201AD |
Vishay | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1.2 V @ 3 A | 5 µA @ 400 V | 30pF @ 4V, 1MHz | — | -50°C ~ 150°C | ✓ |
|
1N5407GP-E3/73
DIODE GEN PURP 800V 3A DO201AD |
Vishay | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1.2 V @ 3 A | 5 µA @ 400 V | 30pF @ 4V, 1MHz | — | -50°C ~ 150°C | ✓ |
|
1N5407GP-TP
DIODE GEN PURP 800V 3A DO201AD |
Micro Commercial Components (MCC) | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 800 V | 40pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N5407GTA
DIODE GEN PURP 800V 3A DO201AD |
SMC Diode Solutions | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 800 V | 30pF @ 4V, 1MHz | — | -65°C ~ 150°C | — |
|
1N5407K
DIODE STD DO-15 800V 3A |
Diotec Semiconductor | Active | Through Hole | DO-204AC, DO-15, Axial | DO15/DO204AC | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1.1 V @ 3 A | 10 µA @ 800 V | — | — | -50°C ~ 175°C | — |
|
1N5407K
ST Rect, 800V, 3A |
DComponents | Active | Through Hole | DO-204AC, DO-15, Axial | DO-15 (DO-204AC) | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 800 V | — | 1.5 µs | -50°C ~ 175°C | ✓ |
|
1N5407RL
DIODE GEN PURP 800V 3A DO201AD |
onsemi | Obsolete | Through Hole | DO-201AA, DO-27, Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1 V @ 3 A | 10 µA @ 800 V | — | — | -65°C ~ 170°C | ✓ |