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Komponentler
10,000 sonuç · Sayfa 75/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5400G
RECTIFIER DIODE, 3A, 50V |
Rochester Electronics | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 3A | 980 mV @ 3 A | 500 nA @ 50 V | 30pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N5400G
DIODE GEN PURP 3A 50V DO-201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 3A (DC) | 1.1 V @ 3 A | 5 µA @ 50 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5400G
DIODE GP GLASS 50V 3A DO-201AD |
Rectron USA | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 3A | 980 mV @ 3 A | 500 nA @ 50 V | 30pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N5400G A0G
DIODE GEN PURP 50V 3A DO201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 50 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5400G B0G
DIODE GEN PURP 50V 3A DO201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 50 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5400G R0G
DIODE GEN PURP 50V 3A DO201AD |
Taiwan Semiconductor | Market | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 50 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5400G-T
DIODE GEN PURP 50V 3A DO201AD |
Diodes Incorporated | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 50 V | 40pF @ 4V, 1MHz | 2 µs | -65°C ~ 150°C | ✓ |
|
1N5400GH
DIODE GEN PURP 3A 50V DO-201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 3A (DC) | 1.1 V @ 3 A | 5 µA @ 50 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5400GHA0G
DIODE GEN PURP 50V 3A DO201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 50 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5400GHB0G
DIODE GEN PURP 50V 3A DO201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 50 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5400GHR0G
DIODE GEN PURP 50V 3A DO201AD |
Taiwan Semiconductor | Market | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 50 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5400GP-AP
DIODE GPP 3A DO-201AD |
Micro Commercial Components (MCC) | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 3A | — | — | 40pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N5400GP-TP
DIODE GEN PURP 50V 3A DO201AD |
Micro Commercial Components (MCC) | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 50 V | 40pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N5400GTA
DIODE GEN PURP 50V 3A DO201AD |
SMC Diode Solutions | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 50 V | 30pF @ 4V, 1MHz | — | -65°C ~ 150°C | — |
|
1N5400K
DIODE STD DO-15 50V 3A |
Diotec Semiconductor | Active | Through Hole | DO-204AC, DO-15, Axial | DO15/DO204AC | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 3A | — | 10 µA @ 50 V | — | — | -50°C ~ 175°C | — |
|
1N5400K
ST Rect, 50V, 3A |
DComponents | Active | Through Hole | DO-204AC, DO-15, Axial | DO-15 (DO-204AC) | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 50 V | — | 1.5 µs | -50°C ~ 175°C | ✓ |
|
1N5400RL
DIODE GEN PURP 50V 3A DO201AD |
onsemi | Obsolete | Through Hole | DO-201AA, DO-27, Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 3A | 1 V @ 3 A | 10 µA @ 50 V | — | — | -65°C ~ 170°C | — |
|
1N5400RLG
DIODE GEN PURP 50V 3A DO201AD |
onsemi | Active | Through Hole | DO-201AA, DO-27, Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 3A | 1 V @ 3 A | 10 µA @ 50 V | — | — | -65°C ~ 150°C | ✓ |
|
1N5400T-G
DIODE GEN PURP 50V 3A DO201AD |
Comchip Technology | Active | Through Hole | DO-201AD, Axial | DO-27 (DO-201AD) | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 50 V | — | — | -65°C ~ 125°C | — |
|
1N5400T/R
STD 3A, CASE TYPE: DO-201AD |
EIC Semiconductor, Inc. | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 3A (DC) | 950 mV @ 3 A | 5 µA @ 50 V | 28pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N5400TA
DIODE GEN PURP 50V 3A DO201AD |
SMC Diode Solutions | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 3A | 1.2 V @ 3 A | 5 µA @ 50 V | 30pF @ 0V, 1MHz | — | -65°C ~ 175°C | — |
|
1N5401
R-100 PRV 3A |
NTE Electronics, Inc. | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A | 1.2 V @ 3 A | 5 µA @ 100 V | 30pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5401
RECTIFIER DIODE, 3A, 100V |
Rochester Electronics | Active | Through Hole | DO-201AA, DO-27, Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A | 1 V @ 3 A | 10 µA @ 100 V | — | — | -65°C ~ 150°C | — |
|
1N5401
DIODE 3A 100V DO-201AD STD. |
Galco Industrial Electronics | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A | 1.2 V @ 3 A | 5 µA @ 100 V | 30pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5401
DIODE GEN PURP 100V 3A DO201AD |
onsemi | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A | 1.2 V @ 3 A | 5 µA @ 100 V | 30pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5401
ST Rect, 100V, 3A |
DComponents | Active | Through Hole | DO-201AA, DO-27, Axial | DO-201 | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A | 1.2 V @ 3 A | 5 µA @ 100 V | — | 1.5 µs | -50°C ~ 175°C | ✓ |
|
1N5401
DIODE GEN PURP 1000V 3A DO-201AD |
Rectron USA | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1 V @ 3 A | 200 nA @ 1000 V | 30pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N5401-AP
DIODE GPP 3A DO-201AD |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A | — | — | 40pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N5401-B
DIODE GEN PURP 100V 3A DO201AD |
Diodes Incorporated | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A | 1 V @ 3 A | 10 µA @ 100 V | 50pF @ 4V, 1MHz | — | -65°C ~ 150°C | ✓ |
|
1N5401-E3/54
DIODE GEN PURP 100V 3A DO201AD |
Vishay | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A | 1.2 V @ 3 A | 5 µA @ 100 V | 30pF @ 4V, 1MHz | — | -50°C ~ 150°C | ✓ |
|
1N5401-E3/73
DIODE GEN PURP 100V 3A DO201AD |
Vishay | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A | 1.2 V @ 3 A | 5 µA @ 100 V | 30pF @ 4V, 1MHz | — | -50°C ~ 150°C | ✓ |
|
1N5401-G
DIODE GEN PURP 100V 3A DO201AD |
Comchip Technology | Active | Through Hole | DO-201AD, Axial | DO-27 (DO-201AD) | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A | 950 mV @ 3 A | 5 µA @ 100 V | — | — | -65°C ~ 125°C | — |
|
1N5401-T
DIODE GEN PURP 100V 3A DO201AD |
Diodes Incorporated | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A | 1 V @ 3 A | 10 µA @ 100 V | 50pF @ 4V, 1MHz | — | -65°C ~ 150°C | ✓ |
|
1N5401-TP
DIODE GEN PURP 100V 3A DO201AD |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 100 V | 40pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N5401/54
DIODE GEN PURP 100V 3A DO201AD |
Vishay | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A | 1.2 V @ 3 A | 5 µA @ 100 V | 30pF @ 4V, 1MHz | — | -50°C ~ 150°C | — |
|
1N5401BULK
STD 3A, CASE TYPE: DO-201AD |
EIC Semiconductor, Inc. | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A (DC) | 950 mV @ 3 A | 5 µA @ 100 V | 28pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N5401G
DIODE GEN PURP 100V 3A AXIAL |
Rochester Electronics | Active | Through Hole | DO-201AA, DO-27, Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A | 1 V @ 3 A | 10 µA @ 100 V | — | — | -65°C ~ 150°C | ✓ |
|
1N5401G
DIODE GEN PURP 3A 100V DO-201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A (DC) | 1.1 V @ 3 A | 5 µA @ 100 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5401G
DIODE GP GLASS 100V 3A DO-201AD |
Rectron USA | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A | 980 mV @ 3 A | 500 nA @ 100 V | 30pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N5401G A0G
DIODE GEN PURP 100V 3A DO201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 100 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5401G B0G
DIODE GEN PURP 100V 3A DO201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 100 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5401G R0G
DIODE GEN PURP 100V 3A DO201AD |
Taiwan Semiconductor | Market | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 100 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5401G-T
DIODE GEN PURP 100V 3A AXIAL |
Diodes Incorporated | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 100 V | 40pF @ 4V, 1MHz | 2 µs | -65°C ~ 150°C | ✓ |
|
1N5401GH
DIODE GEN PURP 3A 100V DO-201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A (DC) | 1.1 V @ 3 A | 5 µA @ 100 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5401GH A0G
DIODE GEN PURP 3A 100V DO-201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A (DC) | 1.1 V @ 3 A | 5 µA @ 100 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5401GHB0G
DIODE GEN PURP 100V 3A DO201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 100 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5401GHR0G
DIODE GEN PURP 100V 3A DO201AD |
Taiwan Semiconductor | Market | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 100 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5401GP-AP
DIODE GPP 3A DO-201AD |
Micro Commercial Components (MCC) | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A | — | — | 40pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N5401GP-TP
DIODE GEN PURP 100V 3A DO201AD |
Micro Commercial Components (MCC) | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 100 V | 40pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N5401GTA
DIODE GEN PURP 100V 3A DO201AD |
SMC Diode Solutions | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 100 V | 30pF @ 4V, 1MHz | — | -65°C ~ 150°C | — |