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Komponentler
10,000 sonuç · Sayfa 80/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5416US/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | E-MELF | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 100 V | — | 150 ns | -65°C ~ 175°C | — |
|
1N5417
DIODE GEN PURP 200V 3A AXIAL |
Microchip Technology | Active | Through Hole | Axial | B, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 200 V | — | 150 ns | -65°C ~ 175°C | — |
|
1N5417
DIODE GEN PURP 200V 4.5A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 4.5A | 1.1 V @ 3 A | 1 µA @ 200 V | 250pF @ 4V, 1MHz | 150 ns | — | — |
|
1N5417 BK
TRANSISTOR |
Central Semiconductor | Obsolete | Through Hole | R-4 (Axial) | GPR-4AM | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 3A | 1.1 V @ 3 A | 1 µA @ 200 V | 150pF @ 12V, 1MHz | 150 ns | -65°C ~ 200°C | — |
|
1N5417 TR
TRANSISTOR |
Central Semiconductor | Obsolete | Through Hole | R-4 (Axial) | GPR-4AM | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 3A | 1.1 V @ 3 A | 1 µA @ 200 V | 150pF @ 12V, 1MHz | 150 ns | -65°C ~ 200°C | — |
|
1N5417-TAP
DIODE AVALANCHE 200V 3A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Avalanche | 3A | 1.5 V @ 9 A | 1 µA @ 200 V | — | 100 ns | -55°C ~ 175°C | ✓ |
|
1N5417/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | Axial | B, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 200 V | — | 150 ns | -65°C ~ 175°C | — |
|
1N5417C.TR
DIODE GEN PURP 200V 4.5A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 4.5A | 1.1 V @ 3 A | 1 µA @ 200 V | 250pF @ 4V, 1MHz | 150 ns | — | — |
|
1N5417E3
STANDARD RECTIFIER |
Microchip Technology | Active | Through Hole | B, Axial | B, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 3A | 1.5 V @ 9 A | — | — | 150 ns | -65°C ~ 175°C | — |
|
1N5417E3/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | B, Axial | B, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 3A | 1.5 V @ 9 A | — | — | 150 ns | -65°C ~ 175°C | — |
|
1N5417TR
DIODE AVALANCHE 200V 3A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Avalanche | 3A | 1.5 V @ 9 A | 1 µA @ 200 V | — | 100 ns | -55°C ~ 175°C | ✓ |
|
1N5417US
DIODE GEN PURP 200V 3A D5B |
Microchip Technology | Active | Surface Mount | E-MELF | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 200 V | — | 150 ns | -65°C ~ 175°C | — |
|
1N5417US/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | E-MELF | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 200 V | — | 150 ns | -65°C ~ 175°C | — |
|
1N5418
DIODE GEN PURP 400V 3A B-MELF |
Microchip Technology | Active | Surface Mount | SQ-MELF, B | B, SQ-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 400 V | — | 150 ns | -65°C ~ 175°C | — |
|
1N5418
DIODE GEN PURP 400V 4.5A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 4.5A | 1.1 V @ 3 A | 1 µA @ 400 V | 165pF @ 4V, 1MHz | 150 ns | — | — |
|
1N5418 BK
TRANSISTOR |
Central Semiconductor | Obsolete | Through Hole | R-4 (Axial) | GPR-4AM | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 3A | 1.1 V @ 3 A | 1 µA @ 400 V | 120pF @ 12V, 1MHz | 150 ns | -65°C ~ 200°C | — |
|
1N5418 TR
TRANSISTOR |
Central Semiconductor | Obsolete | Through Hole | R-4 (Axial) | GPR-4AM | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 3A | 1.1 V @ 3 A | 1 µA @ 400 V | 120pF @ 12V, 1MHz | 150 ns | -65°C ~ 200°C | — |
|
1N5418-TAP
DIODE AVALANCHE 400V 3A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Avalanche | 3A | 1.5 V @ 9 A | 1 µA @ 200 V | — | 100 ns | -55°C ~ 175°C | ✓ |
|
1N5418/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, B | B, SQ-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 400 V | — | 150 ns | -65°C ~ 175°C | — |
|
1N5418C.TR
DIODE GEN PURP 400V 4.5A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 4.5A | 1.1 V @ 3 A | 1 µA @ 400 V | 165pF @ 4V, 1MHz | 150 ns | — | — |
|
1N5418E3
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | B, Axial | B, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 400 V | — | 150 ns | -65°C ~ 175°C | — |
|
1N5418E3/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | B, Axial | B, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 400 V | — | 150 ns | -65°C ~ 175°C | — |
|
1N5418TR
DIODE AVALANCHE 400V 3A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Avalanche | 3A | 1.5 V @ 9 A | 1 µA @ 400 V | — | 100 ns | -55°C ~ 175°C | — |
|
1N5418US
DIODE GEN PURP 400V 3A D5B |
Microchip Technology | Active | Surface Mount | E-MELF | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 400 V | — | 150 ns | -65°C ~ 175°C | — |
|
1N5418US/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | E-MELF | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 400 V | — | 150 ns | -65°C ~ 175°C | — |
|
1N5418USE3
UFR,FRR |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N5419
DIODE GEN PURP 500V 3A B-MELF |
Microchip Technology | Active | Surface Mount | SQ-MELF, B | B, SQ-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 500 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 500 V | — | 250 ns | -65°C ~ 175°C | — |
|
1N5419
DIODE GEN PURP 500V 4.5A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 500 V | Standard | 4.5A | 1.1 V @ 3 A | 1 µA @ 500 V | 140pF @ 4V, 1MHz | 250 ns | — | — |
|
1N5419 BK
TRANSISTOR |
Central Semiconductor | Active | Through Hole | R-4 (Axial) | GPR-4AM | Fast Recovery =< 500ns, > 200mA (Io) | 500 V | Standard | 3A | 1.1 V @ 3 A | 1 µA @ 500 V | 110pF @ 12V, 1MHz | 250 ns | -65°C ~ 200°C | ✓ |
|
1N5419 BK TIN/LEAD
TRANSISTOR |
Central Semiconductor | Active | Through Hole | R-4 (Axial) | GPR-4AM | Fast Recovery =< 500ns, > 200mA (Io) | 500 V | Standard | 3A | 1.1 V @ 3 A | 1 µA @ 500 V | 110pF @ 12V, 1MHz | 250 ns | -65°C ~ 200°C | ✓ |
|
1N5419 TR
TRANSISTOR |
Central Semiconductor | Active | Through Hole | R-4 (Axial) | GPR-4AM | Fast Recovery =< 500ns, > 200mA (Io) | 500 V | Standard | 3A | 1.1 V @ 3 A | 1 µA @ 500 V | 110pF @ 12V, 1MHz | 250 ns | -65°C ~ 200°C | ✓ |
|
1N5419/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, B | B, SQ-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 500 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 500 V | — | 250 ns | -65°C ~ 175°C | — |
|
1N5419E3
DIODE GEN PURP 500V 3A AXIAL |
Microchip Technology | Active | Through Hole | B, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 500 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 500 V | — | 250 ns | -65°C ~ 175°C | — |
|
1N5419E3/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | B, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 500 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 500 V | — | 250 ns | -65°C ~ 175°C | — |
|
1N5419US
DIODE GEN PURP 500V 3A D5B |
Microchip Technology | Active | Surface Mount | E-MELF | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 500 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 500 V | — | 250 ns | -65°C ~ 175°C | — |
|
1N5419US/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | E-MELF | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 500 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 500 V | — | 250 ns | -65°C ~ 175°C | — |
|
1N5420
DIODE GEN PURP 600V 3A AXIAL |
Microchip Technology | Active | Through Hole | B, Axial | B, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 600 V | — | 400 ns | -65°C ~ 175°C | — |
|
1N5420
DIODE GEN PURP 600V 4.5A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 4.5A | 1.1 V @ 3 A | 1 µA @ 600 V | 120pF @ 4V, 1MHz | 400 ns | — | — |
|
1N5420/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | B, Axial | B, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 600 V | — | 400 ns | -65°C ~ 175°C | — |
|
1N5420E3
STANDARD RECTIFIER |
Microchip Technology | Active | Through Hole | B, Axial | B, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 3A | 1.5 V @ 9 A | — | — | 400 ns | -65°C ~ 175°C | — |
|
1N5420E3/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | B, Axial | B, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 3A | 1.5 V @ 9 A | — | — | 400 ns | -65°C ~ 175°C | — |
|
1N5420US
DIODE GEN PURP 600V 3A D5B |
Microchip Technology | Active | Surface Mount | E-MELF | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 600 V | — | 400 ns | -65°C ~ 175°C | — |
|
1N5420US/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | E-MELF | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 600 V | — | 400 ns | -65°C ~ 175°C | — |
|
1N5550
DIODE GEN PURP 200V 3A AXIAL |
Microchip Technology | Active | Through Hole | B, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 3A | 1.2 V @ 9 A | 1 µA @ 200 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N5550
DIODE GEN PURP 200V 5A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 5A | 1 V @ 3 A | 1 µA @ 200 V | 92pF @ 5V, 1MHz | 2 µs | — | — |
|
1N5550
RECT 3AMP 200V G4 |
Solid State Inc. | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 3A | 1 V @ 3 A | 1 µA @ 200 V | 150pF @ 12V, 1MHz | 2 µs | -65°C ~ 200°C | — |
|
1N5550C.TR
DIODE GEN PURP 200V 5A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 5A | 1 V @ 3 A | 1 µA @ 200 V | 92pF @ 5V, 1MHz | 2 µs | — | — |
|
1N5550E3
STD RECTIFIER |
Microchip Technology | Active | Through Hole | B, Axial | B, Axial | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 3A | 1.2 V @ 9 A | 1 µA @ 200 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N5550US
DIODE GEN PURP 200V 3A D5B |
Microchip Technology | Active | Surface Mount | SQ-MELF, B | D-5B | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 3A | 1.2 V @ 9 A | 1 µA @ 200 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N5550US/TR
STD RECTIFIER |
Microchip Technology | Active | Surface Mount | SQ-MELF, B | B, SQ-MELF | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 3A | 1.2 V @ 9 A | 1 µA @ 200 V | — | 2 µs | -65°C ~ 175°C | — |