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Komponentler
10,000 sonuç · Sayfa 83/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5622
DIODE GEN PURP 1KV 1A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.3 V @ 3 A | 500 nA @ 1000 V | — | 2 µs | -65°C ~ 200°C | — |
|
1N5622/TR
STD RECTIFIER |
Microchip Technology | Active | Through Hole | A, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.3 V @ 3 A | 500 nA @ 1 V | — | 2 µs | -65°C ~ 200°C | — |
|
1N5622C.TR
DIODE GEN PURP 1KV 1A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Avalanche | 2A | 1.1 V @ 1 A | 500 nA @ 1000 V | 23pF @ 5V, 1MHz | 2 µs | -65°C ~ 175°C | — |
|
1N5622GP-E3/54
DIODE GEN PURP 1KV 1A DO204AC |
Vishay | Obsolete | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.2 V @ 1 A | 500 nA @ 1000 V | 15pF @ 12V, 1MHz | 2 µs | -65°C ~ 175°C | ✓ |
|
1N5622GP-E3/73
DIODE GEN PURP 1KV 1A DO204AC |
Vishay | Obsolete | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.2 V @ 1 A | 500 nA @ 1000 V | 15pF @ 12V, 1MHz | 2 µs | -65°C ~ 175°C | ✓ |
|
1N5622US
DIODE GEN PURP 1KV 1A D5A |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.3 V @ 3 A | 500 nA @ 1000 V | — | 2 µs | -65°C ~ 200°C | — |
|
1N5622US/TR
STD RECTIFIER |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.3 V @ 3 A | 500 nA @ 1 V | — | 2 µs | -65°C ~ 200°C | — |
|
1N5623
DIODE GEN PURP 1KV 2A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 2A | 1.2 V @ 1 A | 500 nA @ 1000 V | 18pF @ 5V, 1MHz | 500 ns | -65°C ~ 175°C | — |
|
1N5623
DIODE GEN PURP 1KV 1A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.6 V @ 3 A | 500 nA @ 1000 V | 15pF @ 12V, 1MHz | 500 ns | -65°C ~ 175°C | — |
|
1N5623/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.6 V @ 3 A | 500 nA @ 1 V | 15pF @ 12V, 1MHz | 500 ns | -65°C ~ 175°C | — |
|
1N5623E3
HERMETICALLY SEALED GLASS RECTIF |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N5623E3/TR
STD RECTIFIER |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N5623GP-E3/54
DIODE GEN PURP 1KV 1A DO204AC |
Vishay | Active | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.2 V @ 1 A | 500 nA @ 1000 V | 25pF @ 4V, 1MHz | 500 ns | -65°C ~ 175°C | ✓ |
|
1N5623GPHE3/54
DIODE GEN PURP 1KV 1A DO204AC |
Vishay | Obsolete | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.2 V @ 1 A | 500 nA @ 1000 V | 25pF @ 4V, 1MHz | 500 ns | -65°C ~ 175°C | ✓ |
|
1N5623US
DIODE GEN PURP 1KV 1A D5A |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.6 V @ 3 A | 500 nA @ 1000 V | 15pF @ 12V, 1MHz | 500 ns | -65°C ~ 175°C | — |
|
1N5623US/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.6 V @ 3 A | 500 nA @ 1 V | 15pF @ 12V, 1MHz | 500 ns | -65°C ~ 175°C | — |
|
1N5624
RECTIFIER DIODE |
Rochester Electronics | Active | Through Hole | SOD-64, Axial | SOD-64 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 200 V | 40pF @ 4V, 1MHz | — | -65°C ~ 175°C | — |
|
1N5624
R-200 PRV 3A |
NTE Electronics, Inc. | Active | Through Hole | SOD-64, Axial | SOD-64 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 200 V | 40pF @ 4V, 1MHz | — | -65°C ~ 175°C | — |
|
1N5624-TAP
DIODE AVALANCHE 200V 3A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Avalanche | 3A | 1 V @ 3 A | 1 µA @ 200 V | 60pF @ 4V, 1MHz | 7.5 µs | -65°C ~ 175°C | ✓ |
|
1N5624-TR
DIODE AVALANCHE 200V 3A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Avalanche | 3A | 1 V @ 3 A | 1 µA @ 200 V | 60pF @ 4V, 1MHz | 7.5 µs | -55°C ~ 175°C | — |
|
1N5624GP-E3/54
DIODE GEN PURP 200V 3A DO201AD |
Vishay | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 200 V | 40pF @ 4V, 1MHz | 3 µs | -65°C ~ 175°C | ✓ |
|
1N5624GP-E3/73
DIODE GEN PURPOSE DO204AC |
Vishay | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | ✓ |
|
1N5624GPHE3/54
DIODE GEN PURP 200V 3A DO201AD |
Vishay | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 200 V | 40pF @ 4V, 1MHz | 3 µs | -65°C ~ 175°C | ✓ |
|
1N5625
R-400 PRV 3A |
NTE Electronics, Inc. | Active | Through Hole | SOD-64, Axial | SOD-64 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 400 V | 40pF @ 4V, 1MHz | — | -65°C ~ 175°C | — |
|
1N5625-TAP
DIODE AVALANCHE 400V 3A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Avalanche | 3A | 1 V @ 3 A | 1 µA @ 200 V | 60pF @ 4V, 1MHz | 7.5 µs | -55°C ~ 175°C | — |
|
1N5625-TR
DIODE AVALANCHE 400V 3A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Avalanche | 3A | 1 V @ 3 A | 1 µA @ 400 V | 60pF @ 4V, 1MHz | 3 µs | -55°C ~ 175°C | ✓ |
|
1N5625GP-E3/54
DIODE GEN PURP 400V 3A DO201AD |
Vishay | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 400 V | 40pF @ 4V, 1MHz | 5 µs | -65°C ~ 175°C | ✓ |
|
1N5625GP-E3/73
DIODE GEN PURPOSE DO204AC |
Vishay | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | ✓ |
|
1N5625GPHE3/54
DIODE GEN PURP 400V 3A DO201AD |
Vishay | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 400 V | 40pF @ 4V, 1MHz | 3 µs | -65°C ~ 175°C | ✓ |
|
1N5626
R-600 PRV 3A |
NTE Electronics, Inc. | Active | Through Hole | SOD-64, Axial | SOD-64 | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 600 V | 40pF @ 4V, 1MHz | — | -65°C ~ 175°C | — |
|
1N5626-TAP
DIODE AVALANCHE 600V 3A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Standard Recovery >500ns, > 200mA (Io) | 600 V | Avalanche | 3A | 1 V @ 3 A | 1 µA @ 200 V | 60pF @ 4V, 1MHz | 7.5 µs | -55°C ~ 175°C | — |
|
1N5626-TR
DIODE AVALANCHE 600V 3A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Standard Recovery >500ns, > 200mA (Io) | 600 V | Avalanche | 3A | 1 V @ 3 A | 1 µA @ 600 V | 60pF @ 4V, 1MHz | 7.5 µs | -55°C ~ 175°C | — |
|
1N5626GP-E3/54
DIODE GEN PURP 600V 3A DO201AD |
Vishay | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 600 V | 40pF @ 4V, 1MHz | 3 µs | -65°C ~ 175°C | ✓ |
|
1N5626GP-E3/73
DIODE GEN PURPOSE DO204AC |
Vishay | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | ✓ |
|
1N5626GPHE3/54
DIODE GEN PURP 600V 3A DO201AD |
Vishay | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 600 V | 40pF @ 4V, 1MHz | 3 µs | -65°C ~ 175°C | ✓ |
|
1N5627
R-800 PRV 3A |
NTE Electronics, Inc. | Active | Through Hole | SOD-64, Axial | SOD-64 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 800 V | 40pF @ 4V, 1MHz | — | -65°C ~ 175°C | — |
|
1N5627-TAP
DIODE AVALANCHE 800V 3A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Avalanche | 3A | 1 V @ 3 A | 1 µA @ 200 V | 60pF @ 4V, 1MHz | 7.5 µs | -55°C ~ 175°C | ✓ |
|
1N5627-TR
DIODE AVALANCHE 800V 3A SOD64 |
Vishay | Active | Through Hole | SOD-64, Axial | SOD-64 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Avalanche | 3A | 1 V @ 3 A | 1 µA @ 800 V | 60pF @ 4V, 1MHz | 7.5 µs | -55°C ~ 175°C | — |
|
1N5627GP-E3/54
DIODE GEN PURP 800V 3A DO201AD |
Vishay | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 800 V | 40pF @ 4V, 1MHz | 3 µs | -65°C ~ 175°C | ✓ |
|
1N5627GP-E3/73
DIODE GEN PURP 800V 3A DO201AD |
Vishay | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1 V @ 3 A | 200 µA @ 800 V | 40pF @ 4V, 1MHz | 3 µs | -65°C ~ 175°C | ✓ |
|
1N5627GPHE3/54
DIODE GEN PURP 800V 3A DO201AD |
Vishay | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 800 V | 40pF @ 4V, 1MHz | 3 µs | -65°C ~ 175°C | ✓ |
|
1N5711
SCHOTTKY DIODE |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N5711-1
DIODE SCHOTTKY 70V 33MA DO35 |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Small Signal =< 200mA (Io), Any Speed | 70 V | Schottky | 33mA | 1 V @ 15 mA | 200 nA @ 50 V | 2pF @ 0V, 1MHz | — | -65°C ~ 150°C | — |
|
1N5711-1/TR
DIODE SMALL-SIGNAL SCHOTTKY |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Small Signal =< 200mA (Io), Any Speed | 70 V | Schottky | 33mA | 1 V @ 15 mA | 200 nA @ 50 V | 2pF @ 0V, 1MHz | — | -65°C ~ 150°C | — |
|
1N5711/TR
DIODE SMALL-SIGNAL SCHOTTKY |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Small Signal =< 200mA (Io), Any Speed | 70 V | Schottky | 33mA | 1 V @ 15 mA | 200 nA @ 50 V | 2pF @ 0V, 1MHz | — | -65°C ~ 150°C | — |
|
1N5711E3
DIODE SMALL-SIGNAL SCHOTTKY |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 70 V | Schottky | 33mA | 1 V @ 15 mA | 200 nA @ 50 V | 2pF @ 0V, 1MHz | — | -65°C ~ 150°C | — |
|
1N5711E3/TR
DIODE SMALL-SIGNAL SCHOTTKY |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 70 V | Schottky | 33mA | 1 V @ 15 mA | 200 nA @ 50 V | 2pF @ 0V, 1MHz | — | -65°C ~ 150°C | — |
|
1N5711UB
SCHOTTKY DIODE |
Microchip Technology | Active | Surface Mount | 3-SMD, No Lead | UB | Small Signal =< 200mA (Io), Any Speed | 50 V | Schottky | 33mA (DC) | 1 V @ 15 mA | 200 nA @ 50 V | 2pF @ 0V, 1MHz | — | -65°C ~ 150°C | — |
|
1N5711UBCA
SCHOTTKY DIODE |
Microchip Technology | Active | Surface Mount | 3-SMD, No Lead | UB | Small Signal =< 200mA (Io), Any Speed | 50 V | Schottky | 33mA (DC) | 1 V @ 15 mA | 200 nA @ 50 V | 2pF @ 0V, 1MHz | — | -65°C ~ 150°C | — |
|
1N5711UBCC
SCHOTTKY DIODE |
Microchip Technology | Active | Surface Mount | 3-SMD, No Lead | UB | Small Signal =< 200mA (Io), Any Speed | 50 V | Schottky | 33mA (DC) | 1 V @ 15 mA | 200 nA @ 50 V | 2pF @ 0V, 1MHz | — | -65°C ~ 150°C | — |