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Komponentler
10,000 sonuç · Sayfa 82/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5616
DIODE GEN PURP 400V 2A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 2A | 1.1 V @ 1 A | 500 nA @ 400 V | 23pF @ 5V, 1MHz | 2 µs | -65°C ~ 175°C | — |
|
1N5616/TR
STD RECTIFIER |
Microchip Technology | Active | Through Hole | A, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.3 V @ 3 A | 500 nA @ 400 V | — | 2 µs | -65°C ~ 200°C | — |
|
1N5616C.TR
DIODE GEN PURP 400V 1A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 400 V | Avalanche | 2A | 1.1 V @ 1 A | 500 nA @ 400 V | 23pF @ 5V, 1MHz | 2 µs | -65°C ~ 175°C | — |
|
1N5616US
DIODE GEN PURP 400V 1A D5A |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.3 V @ 3 A | 500 nA @ 400 V | — | 2 µs | -65°C ~ 200°C | — |
|
1N5616US/TR
STD RECTIFIER |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.3 V @ 3 A | 500 nA @ 400 V | — | 2 µs | -65°C ~ 200°C | — |
|
1N5617
DIODE GEN PURP 400V 1A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.6 V @ 3 A | 500 nA @ 400 V | 35pF @ 12V, 1MHz | 150 ns | -65°C ~ 175°C | — |
|
1N5617
DIODE GEN PURP 400V 2A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 2A | 1.2 V @ 1 A | 500 nA @ 400 V | 27pF @ 5V, 1MHz | 150 ns | -65°C ~ 175°C | — |
|
1N5617/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.6 V @ 3 A | 500 nA @ 400 V | 35pF @ 12V, 1MHz | 150 ns | -65°C ~ 175°C | — |
|
1N5617C.TR
DIODE GEN PURP 400V 2A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 2A | 1.2 V @ 1 A | 500 nA @ 400 V | 27pF @ 5V, 1MHz | 150 ns | -65°C ~ 175°C | — |
|
1N5617E3
RECTIFIER |
Microchip Technology | Active | Through Hole | A, Axial | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 1A | 800 mV @ 3 A | 500 nA @ 400 V | 35pF @ 12V, 1MHz | 150 ns | -65°C ~ 175°C | — |
|
1N5617E3/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 1A | 800 mV @ 3 A | 500 nA @ 400 V | 35pF @ 12V, 1MHz | 150 ns | -65°C ~ 175°C | — |
|
1N5617GP-E3/54
DIODE GEN PURP 400V 1A DO204AC |
Vishay | Active | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.2 V @ 1 A | 500 nA @ 400 V | 25pF @ 4V, 1MHz | 150 ns | -65°C ~ 175°C | ✓ |
|
1N5617GP-E3/73
DIODE GEN PURP 400V 1A DO204AC |
Vishay | Active | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.2 V @ 1 A | 500 nA @ 400 V | 25pF @ 4V, 1MHz | 150 ns | -65°C ~ 175°C | — |
|
1N5617GPHE3/54
DIODE GEN PURP 400V 1A DO204AC |
Vishay | Obsolete | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.2 V @ 1 A | 500 nA @ 400 V | 25pF @ 4V, 1MHz | 150 ns | -65°C ~ 175°C | ✓ |
|
1N5617US
DIODE GEN PURP 400V 1A D5A |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.6 V @ 3 A | 500 nA @ 400 V | 35pF @ 12V, 1MHz | 150 ns | -65°C ~ 175°C | — |
|
1N5617US/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.6 V @ 3 A | 500 nA @ 400 V | 35pF @ 12V, 1MHz | 150 ns | -65°C ~ 175°C | — |
|
1N5618
DIODE GEN PURP 600V 1A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.3 V @ 3 A | 500 nA @ 600 V | — | 2 µs | -65°C ~ 200°C | — |
|
1N5618
DIODE GEN PURP 600V 2A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 2A | 1.1 V @ 1 A | 500 nA @ 600 V | 23pF @ 5V, 1MHz | 2 µs | -65°C ~ 175°C | — |
|
1N5618/TR
STD RECTIFIER |
Microchip Technology | Active | Through Hole | A, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.3 V @ 3 A | 500 nA @ 600 V | — | 2 µs | -65°C ~ 200°C | — |
|
1N5618GP-E3/54
DIODE GEN PURP 600V 1A DO204AC |
Vishay | Obsolete | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 500 nA @ 600 V | 25pF @ 12V, 1MHz | 2 µs | -65°C ~ 175°C | ✓ |
|
1N5618GPHE3/54
DIODE GEN PURP 600V 1A DO204AC |
Vishay | Obsolete | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 500 nA @ 600 V | 25pF @ 12V, 1MHz | 2 µs | -65°C ~ 175°C | ✓ |
|
1N5618US
DIODE GEN PURP 600V 1A D5A |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.3 V @ 3 A | 500 nA @ 600 V | — | 2 µs | -65°C ~ 200°C | — |
|
1N5618US/TR
STD RECTIFIER |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.3 V @ 3 A | 500 nA @ 600 V | — | 2 µs | -65°C ~ 200°C | — |
|
1N5619
DIODE GEN PURP 600V 1A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.6 V @ 3 A | 500 nA @ 600 V | 25pF @ 12V, 1MHz | 250 ns | -65°C ~ 175°C | — |
|
1N5619
DIODE GEN PURP 600V 2A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 2A | 1.2 V @ 1 A | 500 nA @ 600 V | 27pF @ 5V, 1MHz | 250 ns | -65°C ~ 175°C | — |
|
1N5619/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.6 V @ 3 A | 500 nA @ 600 V | 25pF @ 12V, 1MHz | 250 ns | -65°C ~ 175°C | — |
|
1N5619E3
HERMETICALLY SEALED GLASS RECTIF |
Microchip Technology | Active | Through Hole | A, Axial | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.6 V @ 3 A | 500 µA @ 400 V | 25pF @ 12V, 1MHz | — | -65°C ~ 200°C | — |
|
1N5619E3/TR
STD RECTIFIER |
Microchip Technology | Active | Through Hole | A, Axial | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.6 V @ 3 A | 500 µA @ 400 V | 25pF @ 12V, 1MHz | — | -65°C ~ 200°C | — |
|
1N5619GP-E3/54
DIODE GEN PURP 600V 1A DO204AC |
Vishay | Active | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 500 nA @ 600 V | 25pF @ 4V, 1MHz | 250 ns | -65°C ~ 175°C | ✓ |
|
1N5619GP-E3/73
DIODE GEN PURP 600V 1A DO201AD |
Vishay | Active | Through Hole | DO-201AD, Axial | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 500 nA @ 600 V | 25pF @ 4V, 1MHz | 250 ns | -65°C ~ 175°C | ✓ |
|
1N5619GPHE3/54
DIODE GEN PURP 600V 1A DO204AC |
Vishay | Obsolete | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 500 nA @ 600 V | 25pF @ 4V, 1MHz | 250 ns | -65°C ~ 175°C | ✓ |
|
1N5619US
DIODE GEN PURP 600V 1A D5A |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.6 V @ 3 A | 500 nA @ 600 V | 25pF @ 12V, 1MHz | 250 ns | -65°C ~ 175°C | — |
|
1N5619US/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.6 V @ 3 A | 500 nA @ 600 V | 25pF @ 12V, 1MHz | 250 ns | -65°C ~ 175°C | — |
|
1N5620
DIODE GEN PURP 800V 1A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.3 V @ 3 A | 500 nA @ 800 V | — | 2 µs | -65°C ~ 200°C | — |
|
1N5620
DIODE GEN PURP 800V 2A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 2A | 1.1 V @ 1 A | 500 nA @ 800 V | 23pF @ 5V, 1MHz | 2 µs | -65°C ~ 175°C | — |
|
1N5620/TR
STD RECTIFIER |
Microchip Technology | Active | Through Hole | A, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.3 V @ 3 A | 500 nA @ 800 V | — | 2 µs | -65°C ~ 200°C | — |
|
1N5620C.TR
DIODE GEN PURP 800V 1A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 800 V | Avalanche | 2A | 1.1 V @ 1 A | 500 nA @ 800 V | 23pF @ 5V, 1MHz | 2 µs | -65°C ~ 175°C | — |
|
1N5620GPHE3/54
DIODE GEN PURP 800V 1A DO204AC |
Vishay | Obsolete | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.2 V @ 1 A | 500 nA @ 800 V | 20pF @ 12V, 1MHz | 2 µs | -65°C ~ 175°C | ✓ |
|
1N5620GPHE3/73
DIODE GEN PURP 800V 1A DO204AC |
Vishay | Obsolete | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.2 V @ 1 A | 500 nA @ 800 V | 20pF @ 12V, 1MHz | 2 µs | -65°C ~ 175°C | ✓ |
|
1N5620US
DIODE GEN PURP 800V 1A D5A |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.3 V @ 3 A | 500 nA @ 800 V | — | 2 µs | -65°C ~ 200°C | — |
|
1N5620US/TR
STD RECTIFIER |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.3 V @ 3 A | 500 nA @ 800 V | — | 2 µs | -65°C ~ 200°C | — |
|
1N5621
DIODE GEN PURP 800V 2A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Standard | 2A | 1.2 V @ 1 A | 500 nA @ 800 V | 18pF @ 5V, 1MHz | 300 ns | -65°C ~ 175°C | — |
|
1N5621
DIODE GEN PURP 800V 1A AXIAL |
Microchip Technology | Market | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.6 V @ 3 A | 500 nA @ 800 V | 20pF @ 12V, 1MHz | 300 ns | -65°C ~ 175°C | — |
|
1N5621/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.6 V @ 3 A | 500 nA @ 800 V | 20pF @ 12V, 1MHz | 300 ns | -65°C ~ 175°C | — |
|
1N5621GP-E3/54
DIODE GEN PURP 800V 1A DO204AC |
Vishay | Active | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.2 V @ 1 A | 500 nA @ 800 V | 25pF @ 4V, 1MHz | 300 ns | -65°C ~ 175°C | ✓ |
|
1N5621GP-E3/73
DIODE GEN PURP 800V 1A DO204AC |
Vishay | Active | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.2 V @ 1 A | 500 nA @ 800 V | 25pF @ 4V, 1MHz | 300 ns | -65°C ~ 175°C | — |
|
1N5621GPHE3/54
DIODE GEN PURP 800V 1A DO204AC |
Vishay | Obsolete | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.2 V @ 1 A | 500 nA @ 800 V | 25pF @ 4V, 1MHz | 300 ns | -65°C ~ 175°C | ✓ |
|
1N5621US
DIODE GEN PURP 800V 1A D5A |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.6 V @ 3 A | 500 nA @ 800 V | 20pF @ 12V, 1MHz | 300 ns | -65°C ~ 175°C | — |
|
1N5621US/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Surface Mount | SQ-MELF, A | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.6 V @ 3 A | 500 nA @ 800 V | 20pF @ 12V, 1MHz | 300 ns | -65°C ~ 175°C | — |
|
1N5622
DIODE GEN PURP 1KV 2A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 2A | 1.1 V @ 1 A | 500 nA @ 1000 V | 23pF @ 5V, 1MHz | 2 µs | -65°C ~ 175°C | — |