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Komponentler
10,000 sonuç · Sayfa 79/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5407RLG
DIODE GEN PURP 800V 3A AXIAL |
onsemi | Active | Through Hole | DO-201AA, DO-27, Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1 V @ 3 A | 10 µA @ 800 V | — | — | -65°C ~ 150°C | ✓ |
|
1N5407TA
DIODE GEN PURP 800V 3A DO201AD |
SMC Diode Solutions | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1.2 V @ 3 A | 5 µA @ 800 V | 30pF @ 0V, 1MHz | — | -65°C ~ 175°C | — |
|
1N5408
DIODE 3A 1000V DO-201AD STD. |
Galco Industrial Electronics | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1.2 V @ 3 A | 5 µA @ 1000 V | 30pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N5408
R-1000 PRV 3A |
NTE Electronics, Inc. | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1.2 V @ 3 A | 5 µA @ 1000 V | 30pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5408
RECTIFIER DIODE, 3A, 1000V |
Rochester Electronics | Active | Through Hole | DO-204AC, DO-15, Axial | DO15/DO204AC | Standard Recovery >500ns, > 200mA (Io) | 1 V | Standard | 3A | 1 V @ 3 A | 200 nA @ 1000 V | — | 1.5 µs | -50°C ~ 175°C | — |
|
1N5408
Std Rect, 1000V, 3A |
DComponents | Active | Through Hole | DO-204AC, DO-15, Axial | DO15/DO204AC | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 1000 V | — | 1.5 µs | -50°C ~ 175°C | ✓ |
|
1N5408
DIODE GEN PURP 1KV 3A DO201AD |
onsemi | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1.2 V @ 3 A | 5 µA @ 1000 V | 30pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N5408
DIODE GEN PURP 1000V 3A DO-201AD |
Rectron USA | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1 V @ 3 A | 200 nA @ 1000 V | 30pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N5408-AP
DIODE GPP 3A DO-201AD |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | — | — | 40pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N5408-B
DIODE GEN PURP 1KV 3A DO201AD |
Diodes Incorporated | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1 V @ 3 A | 10 µA @ 1000 V | 25pF @ 4V, 1MHz | — | -65°C ~ 150°C | ✓ |
|
1N5408-E3/51
DIODE GEN PURP 1KV 3A DO201AD |
Vishay | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1.2 V @ 3 A | 5 µA @ 1000 V | 30pF @ 4V, 1MHz | — | -50°C ~ 150°C | ✓ |
|
1N5408-E3/54
DIODE GEN PURP 1KV 3A DO201AD |
Vishay | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1.2 V @ 3 A | 5 µA @ 1000 V | 30pF @ 4V, 1MHz | — | -50°C ~ 150°C | ✓ |
|
1N5408-E3/73
DIODE GEN PURP 1KV 3A DO201AD |
Vishay | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1.2 V @ 3 A | 5 µA @ 1000 V | 30pF @ 4V, 1MHz | — | -50°C ~ 150°C | ✓ |
|
1N5408-G
DIODE GEN PURP 1KV 3A DO201AD |
Comchip Technology | Active | Through Hole | DO-201AD, Axial | DO-27 (DO-201AD) | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 950 mV @ 3 A | 5 µA @ 1000 V | — | — | -65°C ~ 125°C | — |
|
1N5408-T
DIODE GEN PURP 1KV 3A DO201AD |
Diodes Incorporated | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1 V @ 3 A | 10 µA @ 1000 V | 25pF @ 4V, 1MHz | — | -65°C ~ 150°C | ✓ |
|
1N5408-TP
DIODE GEN PURP 1KV 3A DO201AD |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 1000 V | 40pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N5408G
DIODE GEN PURP 1000V 3A DO201AD |
onsemi | Active | Through Hole | DO-201AA, DO-27, Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1 V @ 3 A | 10 µA @ 1000 V | — | — | -65°C ~ 150°C | ✓ |
|
1N5408G
DIODE GEN PURP 3A 1000V DO-201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A (DC) | 1 V @ 3 A | 5 µA @ 1000 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5408G
DIODE GP GLASS 1000V 3A DO-201AD |
Rectron USA | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 980 mV @ 3 A | 500 nA @ 1000 V | 30pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N5408G A0G
DIODE GEN PURP 1KV 3A DO201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1 V @ 3 A | 5 µA @ 1000 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5408G B0G
DIODE GEN PURP 3A DO201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | — | Standard | 3A | 1 V @ 3 A | 5 µA @ 1000 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5408G R0G
DIODE GEN PURP 3A DO201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | — | Standard | 3A | 1 V @ 3 A | 5 µA @ 1000 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5408G-D1-0000
DIODE GEN PURP 1000V 3A DO201AD |
YANGJIE | Active | Through Hole | DO-201AA, DO-27, Axial | DO-201AD (DO-27) | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1 V @ 3 A | 2.5 µA @ 1000 V | 40pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5408G-T
DIODE GEN PURP 1KV 3A DO201AD |
Diodes Incorporated | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 1000 V | 40pF @ 4V, 1MHz | 2 µs | -65°C ~ 150°C | ✓ |
|
1N5408GHA0G
DIODE GEN PURP 3A DO201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | — | Standard | 3A | 1 V @ 3 A | 5 µA @ 1000 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5408GHB0G
DIODE GEN PURP 3A DO201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | — | Standard | 3A | 1 V @ 3 A | 5 µA @ 1000 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5408GHR0G
DIODE GEN PURP 3A DO201AD |
Taiwan Semiconductor | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | — | Standard | 3A | 1 V @ 3 A | 5 µA @ 1000 V | 25pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5408GP-AP
DIODE GPP 3A DO-201AD |
Micro Commercial Components (MCC) | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | — | — | 40pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N5408GP-E3/54
DIODE GEN PURP 1KV 3A DO201AD |
Vishay | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1.2 V @ 3 A | 5 µA @ 400 V | 30pF @ 4V, 1MHz | — | -50°C ~ 150°C | ✓ |
|
1N5408GP-TP
DIODE GEN PURP 1KV 3A DO201AD |
Micro Commercial Components (MCC) | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 1000 V | 40pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N5408GTA
STANDARD RECTIFIER 1000V DO-201A |
SMC Diode Solutions | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 1000 V | 30pF @ 4V, 1MHz | — | -65°C ~ 150°C | — |
|
1N5408K
DIODE STD DO-15 1000V 3A |
Diotec Semiconductor | Active | Through Hole | DO-204AC, DO-15, Axial | DO15/DO204AC | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | — | 10 µA @ 1000 V | — | — | -50°C ~ 175°C | — |
|
1N5408K
ST Rect, 1000V, 3A |
DComponents | Active | Through Hole | DO-204AC, DO-15, Axial | DO-15 (DO-204AC) | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 1000 V | — | 1.5 µs | -50°C ~ 175°C | ✓ |
|
1N5408KR
DIODE STD DO-201 1000V 3A |
Diotec Semiconductor | Active | Through Hole | DO-204AC, DO-15, Axial | DO15/DO204AC | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 1000 V | — | 1.5 µs | -50°C ~ 175°C | — |
|
1N5408KR
ST Rect, 1000V, 3A |
DComponents | Active | Through Hole | DO-204AC, DO-15, Axial | DO-15 (DO-204AC) | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 1000 V | — | 1.5 µs | -50°C ~ 175°C | ✓ |
|
1N5408RL
DIODE GEN PURP 1KV 3A DO201AD |
onsemi | Obsolete | Through Hole | DO-201AA, DO-27, Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1 V @ 3 A | 10 µA @ 1000 V | — | — | -65°C ~ 170°C | — |
|
1N5408RLG
DIODE GEN PURP 1000V 3A DO201AD |
onsemi | Active | Through Hole | DO-201AA, DO-27, Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1 V @ 3 A | 10 µA @ 1000 V | — | — | -65°C ~ 150°C | ✓ |
|
1N5408RLG
1N5408 DIODE 3A/1000V RECTIFIER |
TubeDepot | Active | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1 V @ 3 A | 10 µA @ 1000 V | — | — | -65°C ~ 150°C | — |
|
1N5408TA
DIODE GEN PURP 1KV 3A DO201AD |
SMC Diode Solutions | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 3A | 1.2 V @ 3 A | 5 µA @ 1000 V | 30pF @ 0V, 1MHz | — | -65°C ~ 175°C | — |
|
1N5415
DIODE GEN PURP 50V 3A AXIAL |
Microchip Technology | Active | Through Hole | B, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 50 V | — | 150 ns | -65°C ~ 175°C | — |
|
1N5415
DIODE GEN PURP 50V 4.5A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 4.5A | 1.1 V @ 3 A | 1 µA @ 50 V | 550pF @ 4V, 1MHz | 150 ns | — | — |
|
1N5415/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | B, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 50 V | — | 150 ns | -65°C ~ 175°C | — |
|
1N5415US
DIODE GEN PURP 50V 3A D5B |
Microchip Technology | Market | Surface Mount | E-MELF | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 50 V | — | 150 ns | -65°C ~ 175°C | — |
|
1N5416
DIODE GEN PURP 100V 3A AXIAL |
Microchip Technology | Active | Through Hole | B, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 100 V | — | 150 ns | -65°C ~ 175°C | — |
|
1N5416
DIODE GEN PURP 100V 4.5A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 4.5A | 1.1 V @ 3 A | 1 µA @ 100 V | 430pF @ 4V, 1MHz | 150 ns | — | — |
|
1N5416 BK
TRANSISTOR |
Central Semiconductor | Obsolete | Through Hole | R-4 (Axial) | GPR-4AM | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 3A | 1.1 V @ 3 A | 1 µA @ 100 V | 175pF @ 12V, 1MHz | 150 ns | -65°C ~ 200°C | — |
|
1N5416 BK TIN/LEAD
RECTIFIER-FAST RECOVERY < |
Central Semiconductor | Obsolete | Through Hole | R-4 (Axial) | GPR-4AM | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 3A | 1.1 V @ 3 A | 1 µA @ 100 V | 175pF @ 12V, 1MHz | 150 ns | -65°C ~ 200°C | ✓ |
|
1N5416 TR
TRANSISTOR |
Central Semiconductor | Obsolete | Through Hole | R-4 (Axial) | GPR-4AM | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 3A | 1.1 V @ 3 A | 1 µA @ 100 V | 175pF @ 12V, 1MHz | 150 ns | -65°C ~ 200°C | — |
|
1N5416/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | B, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 100 V | — | 150 ns | -65°C ~ 175°C | — |
|
1N5416US
DIODE GEN PURP 100V 3A D5B |
Microchip Technology | Active | Surface Mount | E-MELF | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 3A | 1.5 V @ 9 A | 1 µA @ 100 V | — | 150 ns | -65°C ~ 175°C | — |