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Komponentler
10,000 sonuç · Sayfa 86/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5816
DO4 20 AMP RECTIFIER |
Solid State Inc. | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 20A | 900 mV @ 10 A | 10 µA @ 150 V | — | 35 ns | -65°C ~ 175°C | — |
|
1N5816E3
RECTIFIER DIODE |
Microchip Technology | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 20A (DC) | 950 mV @ 20 A | 10 µA @ 150 V | 300pF @ 10V, 1MHz | 35 ns | -65°C ~ 175°C | — |
|
1N5816R
DO4 20 AMP RECTIFIER |
Solid State Inc. | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 20A | 900 mV @ 10 A | 10 µA @ 150 V | — | 35 ns | -65°C ~ 175°C | — |
|
1N5816R
RECTIFIER DIODE |
Microchip Technology | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 20A | 950 mV @ 20 A | 10 µA @ 150 V | 300pF @ 10V, 1MHz | 35 ns | -65°C ~ 175°C | — |
|
1N5817
RECTIFIER, SCHOTTKY, 1A, 20V |
Rochester Electronics | Active | Through Hole | DO-204AC, DO-15, Axial | DO15/DO204AC | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 750 mV @ 3 A | 1 mA @ 20 V | — | — | -50°C ~ 150°C | — |
|
1N5817
Schottky D, 20V, 1.00A |
DComponents | Active | Through Hole | DO-204AC, DO-15, Axial | DO15/DO204AC | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 750 mV @ 3 A | 1 mA @ 20 V | — | — | -50°C ~ 150°C | ✓ |
|
1N5817
R-SCHOTTKY 20V 1A |
NTE Electronics, Inc. | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 500 µA @ 20 V | 110pF @ 4V, 1MHz | — | -65°C ~ 125°C | — |
|
1N5817
DIODE SCHOTTKY 20V 1A DO41 |
STMicroelectronics | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 500 µA @ 20 V | — | — | 150°C (Max) | — |
|
1N5817
5A SCHOTTKY RECTIFIER |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N5817
DIODE SCHOTTKY 20V 1A DO41 |
onsemi | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 500 µA @ 20 V | 110pF @ 4V, 1MHz | — | -65°C ~ 125°C | — |
|
1N5817 A0G
DIODE SCHOTTKY 20V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 1 mA @ 20 V | 55pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
1N5817 B0G
DIODE SCHOTTKY 20V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 1 mA @ 20 V | 55pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
1N5817 BK PBFREE
DIODE SCHOTTKY 20V 1A DO41 |
Central Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 1 mA @ 20 V | — | — | -65°C ~ 150°C | ✓ |
|
1N5817 R0G
DIODE SCHOTTKY 20V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 1 mA @ 20 V | 55pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
1N5817 R1G
DIODE SCHOTTKY 20V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 1 mA @ 20 V | 55pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
1N5817 TR PBFREE
DIODE SCHOTTKY 20V 1A DO41 |
Central Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 1 mA @ 20 V | — | — | -65°C ~ 150°C | ✓ |
|
1N5817-B
DIODE SCHOKKTY 20V 1A DO-41 |
Rectron USA | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 200 µA @ 20 V | 110pF @ 4V, 1MHz | — | 150°C | ✓ |
|
1N5817-B
DIODE SCHOTTKY 20V 1A DO41 |
Diodes Incorporated | Market | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 750 mV @ 3 A | 1 mA @ 20 V | 110pF @ 4V, 1MHz | — | -65°C ~ 125°C | ✓ |
|
1N5817-E3/53
DIODE SCHOTTKY 20V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 750 mV @ 3.1 A | 1 mA @ 20 V | 125pF @ 4V, 1MHz | — | -65°C ~ 125°C | ✓ |
|
1N5817-E3/54
DIODE SCHOTTKY 20V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 1 mA @ 20 V | 125pF @ 4V, 1MHz | — | -65°C ~ 125°C | ✓ |
|
1N5817-E3/73
DIODE SCHOTTKY 20V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 1 mA @ 20 V | — | — | -65°C ~ 125°C | — |
|
1N5817-T
DIODE SCHOTTKY 20V 1A DO41 |
Diodes Incorporated | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 1 mA @ 20 V | 110pF @ 4V, 1MHz | — | -65°C ~ 125°C | ✓ |
|
1N5817-TP
DIODE SCHOTTKY 20V 1A DO41 |
Micro Commercial Components (MCC) | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 1 mA @ 20 V | 110pF @ 4V, 1MHz | — | -55°C ~ 125°C | ✓ |
|
1N5817/54
DIODE SCHOTTKY 20V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 1 mA @ 20 V | — | — | -65°C ~ 125°C | — |
|
1N5817/TR
DIODE SMALL-SIGNAL SCHOTTKY |
Microchip Technology | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 1 mA @ 20 V | — | — | -55°C ~ 150°C | — |
|
1N5817_R2_00001
SCHOTTKY BARRIER RECTIFIERS |
PANJIT | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 470 mV @ 1 A | 200 µA @ 20 V | — | — | -55°C ~ 125°C | — |
|
1N5817A-01
DIODE SCHOTTKY 20V 1A DO41 |
Diodes Incorporated | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 750 mV @ 3 A | 1 mA @ 20 V | 110pF @ 4V, 1MHz | — | -65°C ~ 125°C | — |
|
1N5817BULK
DIODE SCHOTTKY 20V 1A DO41 |
EIC Semiconductor, Inc. | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 1 mA @ 20 V | 110pF @ 4V, 1MHz | — | -65°C ~ 125°C | ✓ |
|
1N5817E3
DIODE SMALL-SIGNAL SCHOTTKY |
Microchip Technology | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 1 mA @ 20 V | — | — | -55°C ~ 150°C | — |
|
1N5817E3/TR
DIODE SMALL-SIGNAL SCHOTTKY |
Microchip Technology | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 1 mA @ 20 V | — | — | -55°C ~ 150°C | — |
|
1N5817G
DIODE SCHOTTKY 20V 1A AXIAL |
onsemi | Active | Through Hole | DO-204AL, DO-41, Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 1 mA @ 20 V | — | — | -65°C ~ 125°C | ✓ |
|
1N5817HA0G
DIODE SCHOTTKY 20V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 1 mA @ 20 V | 55pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
1N5817HB0G
DIODE SCHOTTKY 20V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 1 mA @ 20 V | 55pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
1N5817HR0G
DIODE SCHOTTKY 20V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 1 mA @ 20 V | 55pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
1N5817HR1G
DIODE SCHOTTKY 20V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 1 mA @ 20 V | 55pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
1N5817M-13
DIODE SCHOTTKY 20V 1A MELF |
Diodes Incorporated | Obsolete | Surface Mount | DO-213AB, MELF (Glass) | MELF | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 1 mA @ 20 V | — | — | -60°C ~ 125°C | — |
|
1N5817RL
DIODE SCHOTTKY 20V 1A DO41 |
STMicroelectronics | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 500 µA @ 20 V | — | — | 150°C (Max) | — |
|
1N5817RL
DIODE SCHOTTKY 20V 1A AXIAL |
onsemi | Obsolete | Through Hole | DO-204AL, DO-41, Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 1 mA @ 20 V | — | — | -65°C ~ 125°C | — |
|
1N5817RLG
DIODE SCHOTTKY 20V 1A AXIAL |
onsemi | Active | Through Hole | DO-204AL, DO-41, Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 1A | 450 mV @ 1 A | 1 mA @ 20 V | — | — | -65°C ~ 125°C | ✓ |
|
1N5818
DIODE SCHOTTKY 30V 1A DO41 |
STMicroelectronics | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | Schottky | 1A | 500 mV @ 1 A | 500 µA @ 30 V | — | — | 150°C (Max) | — |
|
1N5818
DIODE SCHOTTKY 30V 1A 2-PIN |
Rochester Electronics | Active | Through Hole | DO-204AC, DO-15, Axial | DO15/DO204AC | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | Schottky | 1A | 875 mV @ 3 A | 1 mA @ 200 V | — | — | -50°C ~ 150°C | — |
|
1N5818
R-SCHOTTKY 30V 1A |
NTE Electronics, Inc. | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | Schottky | 1A | 550 mV @ 1 A | 500 µA @ 30 V | 110pF @ 4V, 1MHz | — | -65°C ~ 125°C | — |
|
1N5818
SchottkyD, 30V, 1A |
DComponents | Active | Through Hole | DO-204AC, DO-15, Axial | DO-15 (DO-204AC) | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | Schottky | 1A | 875 mV @ 3 A | 1 mA @ 30 V | — | — | -50°C ~ 150°C | ✓ |
|
1N5818
DIODE SCHOTTKY 30V 1A DO41 |
onsemi | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | Schottky | 1A | 550 mV @ 1 A | 500 µA @ 30 V | 110pF @ 4V, 1MHz | — | -65°C ~ 125°C | ✓ |
|
1N5818 A0G
DIODE SCHOTTKY 30V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | Schottky | 1A | 550 mV @ 1 A | 1 mA @ 30 V | 55pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
1N5818 B0G
DIODE SCHOTTKY 30V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | Schottky | 1A | 550 mV @ 1 A | 1 mA @ 30 V | 55pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
1N5818 BK TIN/LEAD
DIODE SCHOTTKY 30V 1A DO41 |
Central Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | Schottky | 1A | 550 mV @ 1 A | 1 mA @ 30 V | — | — | -65°C ~ 150°C | ✓ |
|
1N5818 R0G
DIODE SCHOTTKY 30V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | Schottky | 1A | 550 mV @ 1 A | 1 mA @ 30 V | 55pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
1N5818 R1G
DIODE SCHOTTKY 30V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | Schottky | 1A | 550 mV @ 1 A | 1 mA @ 30 V | 55pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
1N5818 TR TIN/LEAD
DIODE SCHOTTKY 30V 1A DO41 |
Central Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | Schottky | 1A | 550 mV @ 1 A | 1 mA @ 30 V | — | — | -65°C ~ 150°C | ✓ |