Transistörler - FET, MOSFET - Tekil
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Komponentler
10,000 sonuç · Sayfa 69/200| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT8020JFLL
MOSFET N-CH 800V 33A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | — | N-Channel | — | 800 V | 33A (Tc) | 220mOhm @ 16.5A, 10V | 5V @ 2.5mA | 195 nC @ 10 V | 5200 pF @ 25 V | — | — | — |
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APT8020JLL
MOSFET N-CH 800V 33A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 520W (Tc) | N-Channel | — | 800 V | 33A (Tc) | 200mOhm @ 16.5A, 10V | 5V @ 2.5mA | 195 nC @ 10 V | 5200 pF @ 25 V | 10V | ±30V | — |
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APT8020LFLLG
MOSFET N-CH 800V 38A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | 694W (Tc) | N-Channel | — | 800 V | 38A (Tc) | 220mOhm @ 19A, 10V | 5V @ 2.5mA | 195 nC @ 10 V | 5200 pF @ 25 V | 10V | ±30V | — |
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APT8020LLLG
MOSFET N-CH 800V 38A TO264 |
Microchip Technology | Active | — | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | — | N-Channel | — | 800 V | 38A (Tc) | 200mOhm @ 19A, 10V | 5V @ 2.5mA | 195 nC @ 10 V | 5200 pF @ 25 V | — | — | — |
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APT8024B2LLG
MOSFET N-CH 800V 31A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 565W (Tc) | N-Channel | — | 800 V | 31A (Tc) | 240mOhm @ 15.5A, 10V | 5V @ 2.5mA | 160 nC @ 10 V | 4670 pF @ 25 V | 10V | ±30V | — |
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APT8024JLL
MOSFET N-CH 800V 29A ISOTOP |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 460W (Tc) | N-Channel | — | 800 V | 29A (Tc) | 240mOhm @ 14.5A, 10V | 5V @ 2.5mA | 160 nC @ 10 V | 4670 pF @ 25 V | 10V | ±30V | — |
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APT8024LFLLG
MOSFET N-CH 800V 31A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | 565W (Tc) | N-Channel | — | 800 V | 31A (Tc) | 260mOhm @ 15.5A, 10V | 5V @ 2.5mA | 160 nC @ 10 V | 4670 pF @ 25 V | 10V | ±30V | — |
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APT8024LLLG
MOSFET N-CH 800V 31A TO264 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | 565W (Tc) | N-Channel | — | 800 V | 31A (Tc) | 240mOhm @ 15.5A, 10V | 5V @ 2.5mA | 160 nC @ 10 V | 4670 pF @ 25 V | 10V | ±30V | — |
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APT8024LVRG
MOSFET N-CH 800V 33A TO264 |
Microchip Technology | Obsolete | — | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | — | N-Channel | — | 800 V | 33A (Tc) | 240mOhm @ 16.5A, 10V | 4V @ 2.5mA | 425 nC @ 10 V | 7740 pF @ 25 V | 10V | — | — |
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APT8030JVFR
MOSFET N-CH 800V 25A ISOTOP |
Microchip Technology | Active | — | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | — | N-Channel | — | 800 V | 25A (Tc) | 300mOhm @ 500mA, 10V | 4V @ 2.5mA | 510 nC @ 10 V | 7900 pF @ 25 V | — | — | — |
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APT8030LVFRG
MOSFET N-CH 800V 27A TO264 |
Microchip Technology | Active | — | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | — | N-Channel | — | 800 V | 27A (Tc) | 300mOhm @ 500mA, 10V | 4V @ 2.5mA | 510 nC @ 10 V | 7900 pF @ 25 V | — | — | — |
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APT8030LVRG
MOSFET N-CH 800V 27A TO264 |
Microchip Technology | Active | — | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | — | N-Channel | — | 800 V | 27A (Tc) | 300mOhm @ 500mA, 10V | 4V @ 2.5mA | 510 nC @ 10 V | 7900 pF @ 25 V | — | — | — |
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APT8043BFLLG
MOSFET N-CH 800V 20A TO247 |
Microchip Technology | Active | — | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | — | N-Channel | — | 800 V | 20A (Tc) | 430mOhm @ 10A, 10V | 5V @ 1mA | 85 nC @ 10 V | 2500 pF @ 25 V | — | — | — |
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APT8043BLLG
MOSFET N-CH 800V 20A TO247 |
Microchip Technology | Active | — | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | — | N-Channel | — | 800 V | 20A (Tc) | 430mOhm @ 5A, 10V | 5V @ 1mA | 85 nC @ 10 V | 2500 pF @ 25 V | — | — | — |
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APT8043SFLLG
MOSFET N-CH 800V 20A D3PAK |
Microchip Technology | Active | — | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3 [S] | — | N-Channel | — | 800 V | 20A (Tc) | 430mOhm @ 10A, 10V | 5V @ 1mA | 85 nC @ 10 V | 2500 pF @ 25 V | — | — | — |
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APT8052BFLLG
MOSFET N-CH 800V 15A TO247 |
Microchip Technology | Active | — | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | — | N-Channel | — | 800 V | 15A (Tc) | 520mOhm @ 7.5A, 10V | 5V @ 1mA | 75 nC @ 10 V | 2035 pF @ 25 V | — | — | — |
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APT8052BLLG
MOSFET N-CH 800V 15A TO247 |
Microchip Technology | Active | — | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | — | N-Channel | — | 800 V | 15A (Tc) | 520mOhm @ 7.5A, 10V | 5V @ 1mA | 75 nC @ 10 V | 2035 pF @ 25 V | — | — | — |
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APT8056BVRG
MOSFET N-CH 800V 16A TO247 |
WEC | Active | — | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | — | N-Channel | — | 800 V | 16A (Tc) | 560mOhm @ 500mA, 10V | 4V @ 1mA | 275 nC @ 10 V | 4440 pF @ 25 V | — | — | — |
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APT8065BVFRG
MOSFET N-CH 800V 13A TO247 |
Microchip Technology | Active | — | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | — | N-Channel | — | 800 V | 13A (Tc) | 650mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | 3700 pF @ 25 V | — | — | — |
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APT8065BVRG
MOSFET N-CH 800V 13A TO247 |
WEC | Active | — | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | — | N-Channel | — | 800 V | 13A (Tc) | 650mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | 3700 pF @ 25 V | — | — | — |
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APT8065SVRG
MOSFET N-CH 800V 13A D3PAK |
Microchip Technology | Active | — | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3 [S] | — | N-Channel | — | 800 V | 13A (Tc) | 650mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | 3700 pF @ 25 V | — | — | — |
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APT8075BN
MOSFET N-CH 800V 13A TO247AD |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247AD | 310W (Tc) | N-Channel | — | 800 V | 13A (Tc) | 750mOhm @ 6.5A, 10V | 4V @ 1mA | 130 nC @ 10 V | 2950 pF @ 25 V | 10V | ±30V | — |
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APT80F60J
MOSFET N-CH 600V 84A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 961W (Tc) | N-Channel | — | 600 V | 84A (Tc) | 55mOhm @ 60A, 10V | 5V @ 2.5mA | 598 nC @ 10 V | 23994 pF @ 25 V | 10V | ±30V | — |
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APT80M60J
MOSFET N-CH 600V 84A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 960W (Tc) | N-Channel | — | 600 V | 84A (Tc) | 55mOhm @ 60A, 10V | 5V @ 5mA | 600 nC @ 10 V | 24000 pF @ 25 V | 10V | ±30V | — |
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APT80SM120B
SICFET N-CH 1200V 80A TO247 |
Microchip Technology | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247 | 555W (Tc) | N-Channel | — | 1200 V | 80A (Tc) | 55mOhm @ 40A, 20V | 2.5V @ 1mA | 235 nC @ 20 V | — | 20V | +25V, -10V | — |
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APT80SM120J
SICFET N-CH 1200V 51A SOT227 |
Microchip Technology | Obsolete | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SiCFET (Silicon Carbide) | SOT-227 | 273W (Tc) | N-Channel | — | 1200 V | 51A (Tc) | 55mOhm @ 40A, 20V | 2.5V @ 1mA | 235 nC @ 20 V | — | 20V | +25V, -10V | — |
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APT80SM120S
SICFET N-CH 1200V 80A D3PAK |
Microchip Technology | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiCFET (Silicon Carbide) | D3PAK | 625W (Tc) | N-Channel | — | 1200 V | 80A (Tc) | 55mOhm @ 40A, 20V | 2.5V @ 1mA | 235 nC @ 20 V | — | 20V | +25V, -10V | — |
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APT84F50B2
MOSFET N-CH 500V 84A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 1135W (Tc) | N-Channel | — | 500 V | 84A (Tc) | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | 13500 pF @ 25 V | 10V | ±30V | — |
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APT84F50L
MOSFET N-CH 500V 84A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | 1135W (Tc) | N-Channel | — | 500 V | 84A (Tc) | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | 13500 pF @ 25 V | 10V | ±30V | — |
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APT84M50B2
MOSFET N-CH 500V 84A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 1135W (Tc) | N-Channel | — | 500 V | 84A (Tc) | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | 13500 pF @ 25 V | 10V | ±30V | — |
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APT84M50L
MOSFET N-CH 500V 84A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 | 1135W (Tc) | N-Channel | — | 500 V | 84A (Tc) | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | 13500 pF @ 25 V | 10V | ±30V | — |
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APT8M100B
MOSFET N-CH 1000V 8A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 290W (Tc) | N-Channel | — | 1000 V | 8A (Tc) | 1.8Ohm @ 4A, 10V | 5V @ 1mA | 60 nC @ 10 V | 1885 pF @ 25 V | 10V | ±30V | — |
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APT8M80K
MOSFET N-CH 800V 8A TO220 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 [K] | 225W (Tc) | N-Channel | — | 800 V | 8A (Tc) | 1.35Ohm @ 4A, 10V | 5V @ 500µA | 43 nC @ 10 V | 1335 pF @ 25 V | 10V | ±30V | — |
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APT94N60L2C3G
MOSFET N-CH 600V 94A 264 MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | 264 MAX™ [L2] | 833W (Tc) | N-Channel | — | 600 V | 94A (Tc) | 35mOhm @ 60A, 10V | 3.9V @ 5.4mA | 640 nC @ 10 V | 13600 pF @ 25 V | 10V | ±20V | — |
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APT94N65B2C3G
MOSFET N-CH 650V 94A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 833W (Tc) | N-Channel | — | 650 V | 94A (Tc) | 35mOhm @ 47A, 10V | 3.9V @ 5.8mA | 580 nC @ 10 V | 13940 pF @ 25 V | 10V | ±20V | — |
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APT94N65B2C6
MOSFET N-CH 650V 95A T-MAX |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 833W (Tc) | N-Channel | Super Junction | 650 V | 95A (Tc) | 35mOhm @ 35.2A, 10V | 3.5V @ 3.5mA | 320 nC @ 10 V | 8140 pF @ 25 V | 10V | ±20V | — |
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APT97N65LC6
MOSFET N-CH 650V 97A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | 862W (Tc) | N-Channel | — | 650 V | 97A (Tc) | 41mOhm @ 48.5A, 10V | 3.5V @ 2.96mA | 300 nC @ 10 V | 7650 pF @ 25 V | 10V | ±20V | — |
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APT9F100B
MOSFET N-CH 1000V 9A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 337W (Tc) | N-Channel | — | 1000 V | 9A (Tc) | 1.6Ohm @ 5A, 10V | 5V @ 1mA | 80 nC @ 10 V | 2606 pF @ 25 V | 10V | ±30V | — |
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APT9F100S
MOSFET N-CH 1000V 9A D3PAK |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3PAK | 337W (Tc) | N-Channel | — | 1000 V | 9A (Tc) | 1.6Ohm @ 5A, 10V | 5V @ 1mA | 80 nC @ 10 V | 2606 pF @ 25 V | 10V | ±30V | — |
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APT9M100B
MOSFET N-CH 1000V 9A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 335W (Tc) | N-Channel | — | 1000 V | 9A (Tc) | 1.4Ohm @ 5A, 10V | 5V @ 1mA | 80 nC @ 10 V | 2605 pF @ 25 V | 10V | ±30V | — |
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APT9M100S
MOSFET N-CH 1000V 9A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3PAK | 335W (Tc) | N-Channel | — | 1000 V | 9A (Tc) | 1.4Ohm @ 5A, 10V | 5V @ 1mA | 80 nC @ 10 V | 2605 pF @ 25 V | 10V | ±30V | — |
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APTC60DAM18CTG
MOSFET N-CH 600V 143A SP4 |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | MOSFET (Metal Oxide) | SP4 | 833W (Tc) | N-Channel | — | 600 V | 143A (Tc) | 18mOhm @ 71.5A, 10V | 3.9V @ 4mA | 1036 nC @ 10 V | 28000 pF @ 25 V | 10V | ±30V | — |
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APTC60DAM24CT1G
MOSFET N-CH 600V 95A SP4 |
Microchip Technology | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | MOSFET (Metal Oxide) | SP4 | 462W (Tc) | N-Channel | — | 600 V | 95A (Tc) | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300 nC @ 10 V | 14400 pF @ 25 V | 10V | ±20V | — |
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APTC60DAM24T1G
MOSFET N-CH 600V 95A SP1 |
Microchip Technology | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | MOSFET (Metal Oxide) | SP1 | 462W (Tc) | N-Channel | — | 600 V | 95A (Tc) | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300 nC @ 10 V | 14400 pF @ 25 V | 10V | ±20V | — |
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APTC60DAM35T1G
MOSFET N-CH 600V 72A SP1 |
Microchip Technology | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | MOSFET (Metal Oxide) | SP1 | 416W (Tc) | N-Channel | — | 600 V | 72A (Tc) | 35mOhm @ 72A, 10V | 3.9V @ 5.4mA | 518 nC @ 10 V | 14000 pF @ 25 V | 10V | ±20V | — |
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APTC60SKM24CT1G
MOSFET N-CH 600V 95A SP1 |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | MOSFET (Metal Oxide) | SP1 | 462W (Tc) | N-Channel | Super Junction | 600 V | 95A (Tc) | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300 nC @ 10 V | 14400 pF @ 25 V | 10V | ±20V | — |
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APTC60SKM24T1G
MOSFET N-CH 600V 95A SP1 |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | MOSFET (Metal Oxide) | SP1 | 462W (Tc) | N-Channel | — | 600 V | 95A (Tc) | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300 nC @ 10 V | 14400 pF @ 25 V | 10V | ±20V | — |
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APTC60SKM35T1G
MOSFET N-CH 600V 72A SP1 |
Microchip Technology | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | MOSFET (Metal Oxide) | SP1 | 416W (Tc) | N-Channel | — | 600 V | 72A (Tc) | 35mOhm @ 72A, 10V | 3.9V @ 5.4mA | 518 nC @ 10 V | 14000 pF @ 25 V | 10V | ±20V | — |
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APTC80DA15T1G
MOSFET N-CH 800V 28A SP1 |
Microchip Technology | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | MOSFET (Metal Oxide) | SP1 | 277W (Tc) | N-Channel | — | 800 V | 28A (Tc) | 150mOhm @ 14A, 10V | 3.9V @ 2mA | 180 nC @ 10 V | 4507 pF @ 25 V | 10V | ±30V | — |
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APTC80SK15T1G
MOSFET N-CH 800V 28A SP1 |
Microchip Technology | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | MOSFET (Metal Oxide) | SP1 | 277W (Tc) | N-Channel | — | 800 V | 28A (Tc) | 150mOhm @ 14A, 10V | 3.9V @ 2mA | 180 nC @ 10 V | 4507 pF @ 25 V | 10V | ±30V | — |