Transistörler - FET, MOSFET - Tekil
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Komponentler
10,000 sonuç · Sayfa 68/200| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT6038BFLLG
MOSFET N-CH 600V 17A TO247 |
Microchip Technology | Active | — | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | — | N-Channel | — | 600 V | 17A (Tc) | 380mOhm @ 8.5A, 10V | 5V @ 1mA | 43 nC @ 10 V | 1850 pF @ 25 V | — | — | — |
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APT6038BLLG
MOSFET N-CH 600V 17A TO247 |
Microchip Technology | Active | — | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | — | N-Channel | — | 600 V | 17A (Tc) | 380mOhm @ 8.5A, 10V | 5V @ 1mA | 43 nC @ 10 V | 1850 pF @ 25 V | — | — | — |
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APT6038SLLG
MOSFET N-CH 600V 17A D3PAK |
Microchip Technology | Active | — | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3 [S] | — | N-Channel | — | 600 V | 17A (Tc) | 380mOhm @ 8.5A, 10V | 5V @ 1mA | 43 nC @ 10 V | 1850 pF @ 25 V | — | — | — |
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APT6040BN
MOSFET N-CH 600V 18A TO247AD |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247AD | 310W (Tc) | N-Channel | — | 600 V | 18A (Tc) | 400mOhm @ 9A, 10V | 4V @ 1mA | 130 nC @ 10 V | 2950 pF @ 25 V | 10V | ±30V | — |
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APT6040BNG
MOSFET N-CH 600V 18A TO247AD |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247AD | 310W (Tc) | N-Channel | — | 600 V | 18A (Tc) | 400mOhm @ 9A, 10V | 4V @ 1mA | 130 nC @ 10 V | 2950 pF @ 25 V | 10V | ±30V | — |
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APT60M60JFLL
MOSFET N-CH 600V 70A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 694W (Tc) | N-Channel | — | 600 V | 70A (Tc) | 60mOhm @ 35A, 10V | 5V @ 5mA | 289 nC @ 10 V | 12630 pF @ 25 V | 10V | ±30V | — |
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APT60M60JLL
MOSFET N-CH 600V 70A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 694W (Tc) | N-Channel | — | 600 V | 70A (Tc) | 60mOhm @ 35A, 10V | 5V @ 5mA | 289 nC @ 10 V | 12630 pF @ 25 V | 10V | ±30V | — |
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APT60M75JFLL
MOSFET N-CH 600V 58A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 595W (Tc) | N-Channel | — | 600 V | 58A (Tc) | 75mOhm @ 29A, 10V | 5V @ 5mA | 195 nC @ 10 V | 8930 pF @ 25 V | 10V | ±30V | — |
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APT60M75JLL
MOSFET N-CH 600V 58A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 595W (Tc) | N-Channel | — | 600 V | 58A (Tc) | 75mOhm @ 29A, 10V | 5V @ 5mA | 195 nC @ 10 V | 8930 pF @ 25 V | 10V | ±30V | — |
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APT60M75JVFR
MOSFET N-CH 600V 62A ISOTOP |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 700W (Tc) | N-Channel | — | 600 V | 62A (Tc) | 75mOhm @ 31A, 10V | 4V @ 5mA | 1050 nC @ 10 V | 19800 pF @ 25 V | 10V | ±30V | — |
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APT60M75JVR
MOSFET N-CH 600V 62A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 700W (Tc) | N-Channel | — | 600 V | 62A (Tc) | 75mOhm @ 500mA, 10V | 4V @ 5mA | 1050 nC @ 10 V | 19800 pF @ 25 V | 10V | ±30V | — |
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APT60M75L2FLLG
MOSFET N-CH 600V 73A 264 MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | 264 MAX™ [L2] | 893W (Tc) | N-Channel | — | 600 V | 73A (Tc) | 75mOhm @ 36.5A, 10V | 5V @ 5mA | 195 nC @ 10 V | 8930 pF @ 25 V | 10V | ±30V | — |
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APT60M75L2LLG
MOSFET N-CH 600V 73A 264 MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | 264 MAX™ [L2] | 893W (Tc) | N-Channel | — | 600 V | 73A (Tc) | 75mOhm @ 36.5A, 10V | 5V @ 5mA | 195 nC @ 10 V | 8930 pF @ 25 V | 10V | ±30V | — |
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APT60M80JVR
MOSFET N-CH 600V 55A ISOTOP |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 568W (Tc) | N-Channel | — | 600 V | 55A (Tc) | 80mOhm @ 500mA, 10V | 4V @ 5mA | 870 nC @ 10 V | 14500 pF @ 25 V | 10V | ±30V | — |
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APT60M80L2VRG
MOSFET N-CH 600V 65A 264 MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | 264 MAX™ [L2] | 833W (Tc) | N-Channel | — | 600 V | 65A (Tc) | 80mOhm @ 32.5A, 10V | 4V @ 5mA | 590 nC @ 10 V | 13300 pF @ 25 V | 10V | ±30V | — |
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APT60N60BCSG
MOSFET N-CH 600V 60A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 431W (Tc) | N-Channel | — | 600 V | 60A (Tc) | 45mOhm @ 44A, 10V | 3.9V @ 3mA | 190 nC @ 10 V | 7200 pF @ 25 V | 10V | ±30V | — |
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APT60N60SCSG
MOSFET N-CH 600V 60A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D3PAK | 431W (Tc) | N-Channel | Super Junction | 600 V | 60A (Tc) | 45mOhm @ 44A, 10V | 3.9V @ 3mA | 190 nC @ 10 V | 7200 pF @ 25 V | 10V | ±30V | — |
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APT60N60SCSG/TR
MOSFET N-CH 600V 60A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D3PAK | 431W (Tc) | N-Channel | Super Junction | 600 V | 60A (Tc) | 45mOhm @ 44A, 10V | 3.9V @ 3mA | 190 nC @ 10 V | 7200 pF @ 25 V | 10V | ±30V | — |
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APT66F60B2
MOSFET N-CH 600V 70A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 1135W (Tc) | N-Channel | — | 600 V | 70A (Tc) | 90mOhm @ 33A, 10V | 5V @ 2.5mA | 330 nC @ 10 V | 13190 pF @ 25 V | 10V | ±30V | — |
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APT66F60L
MOSFET N-CH 600V 70A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | 1135W (Tc) | N-Channel | — | 600 V | 70A (Tc) | 90mOhm @ 33A, 10V | 5V @ 2.5mA | 330 nC @ 10 V | 13190 pF @ 25 V | 10V | ±30V | — |
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APT66M60B2
MOSFET N-CH 600V 70A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 1135W (Tc) | N-Channel | — | 600 V | 70A (Tc) | 100mOhm @ 33A, 10V | 5V @ 2.5mA | 330 nC @ 10 V | 13190 pF @ 25 V | 10V | ±30V | — |
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APT66M60L
MOSFET N-CH 600V 70A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | 1135W (Tc) | N-Channel | — | 600 V | 70A (Tc) | 190mOhm @ 33A, 10V | 5V @ 2.5mA | 330 nC @ 10 V | 13190 pF @ 25 V | 10V | ±30V | — |
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APT6M100K
MOSFET N-CH 1000V 6A TO220 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 [K] | 225W (Tc) | N-Channel | — | 1000 V | 6A (Tc) | 2.5Ohm @ 3A, 10V | 5V @ 1mA | 43 nC @ 10 V | 1410 pF @ 25 V | 10V | ±30V | — |
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APT70SM70B
SICFET N-CH 700V 65A TO247 |
Microchip Technology | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247 [B] | 300W (Tc) | N-Channel | — | 700 V | 65A (Tc) | 70mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125 nC @ 20 V | — | 20V | +25V, -10V | — |
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APT70SM70J
SICFET N-CH 700V 49A SOT227 |
Microchip Technology | Obsolete | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SiCFET (Silicon Carbide) | SOT-227 | 165W (Tc) | N-Channel | — | 700 V | 49A (Tc) | 70mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125 nC @ 20 V | — | 20V | +25V, -10V | — |
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APT70SM70S
SICFET N-CH 700V 65A D3PAK |
Microchip Technology | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiCFET (Silicon Carbide) | D3PAK | 220W (Tc) | N-Channel | — | 700 V | 65A (Tc) | 70mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125 nC @ 20 V | — | 20V | +25V, -10V | — |
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APT75F50B2
MOSFET N-CH 500V 75A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 1040W (Tc) | N-Channel | — | 500 V | 75A (Tc) | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290 nC @ 10 V | 11600 pF @ 25 V | 10V | ±30V | — |
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APT75F50L
MOSFET N-CH 500V 75A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | 1040W (Tc) | N-Channel | — | 500 V | 75A (Tc) | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290 nC @ 10 V | 11600 pF @ 25 V | 10V | ±30V | — |
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APT75M50B2
MOSFET N-CH 500V 75A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ | 1040W (Tc) | N-Channel | — | 500 V | 75A (Tc) | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290 nC @ 10 V | 11600 pF @ 25 V | 10V | ±30V | — |
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APT75M50L
MOSFET N-CH 500V 75A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | 1040W (Tc) | N-Channel | — | 500 V | 75A (Tc) | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290 nC @ 10 V | 11600 pF @ 25 V | 10V | ±30V | — |
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APT77N60BC6
MOSFET N-CH 600V 77A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 481W (Tc) | N-Channel | Super Junction | 600 V | 77A (Tc) | 41mOhm @ 44.4A, 10V | 3.6V @ 2.96mA | 260 nC @ 10 V | 13600 pF @ 25 V | 10V | ±20V | — |
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APT77N60JC3
MOSFET N-CH 600V 77A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 568W (Tc) | N-Channel | — | 600 V | 77A (Tc) | 35mOhm @ 60A, 10V | 3.9V @ 5.4mA | 640 nC @ 10 V | 13600 pF @ 25 V | 10V | ±20V | — |
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APT77N60SC6
MOSFET N-CH 600V 77A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D3PAK | 481W (Tc) | N-Channel | Super Junction | 600 V | 77A (Tc) | 41mOhm @ 44.4A, 10V | 3.6V @ 2.96mA | 260 nC @ 10 V | 13600 pF @ 25 V | 10V | ±20V | — |
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APT77N60SC6/TR
MOSFET N-CH 600V 77A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3PAK | 481W (Tc) | N-Channel | — | 600 V | 77A (Tc) | 41mOhm @ 44.4A, 10V | 3.6V @ 2.96mA | 260 nC @ 10 V | 13600 pF @ 25 V | 10V | ±20V | — |
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APT7F100B
MOSFET N-CH 1000V 7A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 290W (Tc) | N-Channel | — | 1000 V | 7A (Tc) | 2Ohm @ 4A, 10V | 5V @ 500µA | 58 nC @ 10 V | 1800 pF @ 25 V | 10V | ±30V | — |
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APT7F120B
MOSFET N-CH 1200V 7A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 335W (Tc) | N-Channel | — | 1200 V | 7A (Tc) | 2.9Ohm @ 3A, 10V | 5V @ 1mA | 80 nC @ 10 V | 2565 pF @ 25 V | 10V | ±30V | — |
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APT7F120S
MOSFET N-CH 1200V 7A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3PAK | 335W (Tc) | N-Channel | — | 1200 V | 7A (Tc) | 2.4Ohm @ 3A, 10V | 5V @ 1mA | 80 nC @ 10 V | 2565 pF @ 25 V | 10V | ±30V | — |
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APT7F80K
MOSFET N-CH 800V 7A TO220 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 [K] | 225W (Tc) | N-Channel | — | 800 V | 7A (Tc) | 1.5Ohm @ 4A, 10V | 5V @ 500µA | 43 nC @ 10 V | 1335 pF @ 25 V | 10V | ±30V | — |
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APT7M120B
MOSFET N-CH 1200V 8A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 335W (Tc) | N-Channel | — | 1200 V | 8A (Tc) | 2.5Ohm @ 3A, 10V | 5V @ 1mA | 80 nC @ 10 V | 2565 pF @ 25 V | 10V | ±30V | — |
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APT7M120S
MOSFET N-CH 1200V 8A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D3PAK | 335W (Tc) | N-Channel | — | 1200 V | 8A (Tc) | 2.1Ohm @ 3A, 10V | 5V @ 1mA | 80 nC @ 10 V | 2565 pF @ 25 V | 10V | ±30V | — |
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APT8011JFLL
MOSFET N-CH 800V 51A ISOTOP |
Microchip Technology | Active | — | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | — | N-Channel | — | 800 V | 51A (Tc) | 125mOhm @ 25.5A, 10V | 5V @ 5mA | 650 nC @ 10 V | 9480 pF @ 25 V | — | — | — |
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APT8011JLL
MOSFET N-CH 800V 51A ISOTOP |
Microchip Technology | Active | — | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | — | N-Channel | — | 800 V | 51A (Tc) | 110mOhm @ 25.5A, 10V | 5V @ 5mA | 650 nC @ 10 V | 9480 pF @ 25 V | — | — | — |
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APT8014JLL
MOSFET N-CH 800V 42A ISOTOP |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 595W (Tc) | N-Channel | — | 800 V | 42A (Tc) | 140mOhm @ 21A, 10V | 5V @ 5mA | 285 nC @ 10 V | 7238 pF @ 25 V | 10V | ±30V | — |
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APT8014L2FLLG
MOSFET N-CH 800V 52A 264 MAX |
Microchip Technology | Active | — | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | 264 MAX™ [L2] | — | N-Channel | — | 800 V | 52A (Tc) | 160mOhm @ 26A, 10V | 5V @ 5mA | 285 nC @ 10 V | 7238 pF @ 25 V | — | — | — |
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APT8014L2LLG
MOSFET N-CH 800V 52A 264 MAX |
Microchip Technology | Active | — | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | 264 MAX™ [L2] | — | N-Channel | — | 800 V | 52A (Tc) | 140mOhm @ 26A, 10V | 5V @ 5mA | 285 nC @ 10 V | 7238 pF @ 25 V | — | — | — |
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APT8015JVFR
MOSFET N-CH 800V 44A ISOTOP |
Microchip Technology | Active | — | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | — | N-Channel | — | 800 V | 44A (Tc) | 150mOhm @ 500mA, 10V | 4V @ 5mA | 285 nC @ 10 V | 17650 pF @ 25 V | — | — | — |
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APT8015JVR
MOSFET N-CH 800V 44A ISOTOP |
Microchip Technology | Active | — | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | — | N-Channel | — | 800 V | 44A (Tc) | 150mOhm @ 500mA, 10V | 4V @ 5mA | 285 nC @ 10 V | 17650 pF @ 25 V | — | — | — |
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APT8018JN
MOSFET N-CH 800V 40A ISOTOP |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 690W (Tc) | N-Channel | — | 800 V | 40A (Tc) | 180mOhm @ 20A, 10V | 4V @ 5mA | 700 nC @ 10 V | 14000 pF @ 25 V | 10V | ±30V | — |
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APT8020B2FLLG
MOSFET N-CH 800V 38A T-MAX |
Microchip Technology | Active | — | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | — | N-Channel | — | 800 V | 38A (Tc) | 220mOhm @ 19A, 10V | 5V @ 2.5mA | 195 nC @ 10 V | 5200 pF @ 25 V | — | — | — |
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APT8020B2LLG
MOSFET N-CH 800V 38A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 694W (Tc) | N-Channel | — | 800 V | 38A (Tc) | 200mOhm @ 19A, 10V | 5V @ 2.5mA | 195 nC @ 10 V | 5200 pF @ 25 V | 10V | ±30V | — |