Transistörler - FET, MOSFET - Tekil
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Komponentler
10,000 sonuç · Sayfa 60/200| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT10043JVR
MOSFET N-CH 1000V 22A ISOTOP |
Microchip Technology | Obsolete | — | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | — | N-Channel | — | 1000 V | 22A (Tj) | 430mOhm @ 500mA, 10V | 4V @ 1mA | 480 nC @ 10 V | 9000 pF @ 25 V | — | — | — |
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APT10045B2FLLG
MOSFET N-CH 1000V 23A T-MAX |
Microchip Technology | Active | — | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | — | N-Channel | — | 1000 V | 23A (Tc) | 460mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154 nC @ 10 V | 4350 pF @ 25 V | — | — | — |
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APT10045B2LLG
MOSFET N-CH 1000V 23A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 565W (Tc) | N-Channel | — | 1000 V | 23A (Tc) | 450mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154 nC @ 10 V | 4350 pF @ 25 V | 10V | ±30V | — |
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APT10045JFLL
MOSFET N-CH 1000V 21A ISOTOP |
Microchip Technology | Active | — | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | — | N-Channel | — | 1000 V | 21A (Tc) | 460mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154 nC @ 10 V | 4350 pF @ 25 V | — | — | — |
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APT10045JLL
MOSFET N-CH 1000V 21A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 460W (Tc) | N-Channel | — | 1000 V | 21A (Tc) | 450mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154 nC @ 10 V | 4350 pF @ 25 V | 10V | ±30V | — |
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APT10045LFLLG
MOSFET N-CH 1000V 23A TO264 |
Microchip Technology | Active | — | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | — | N-Channel | — | 1000 V | 23A (Tc) | 460mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154 nC @ 10 V | 4350 pF @ 25 V | — | — | — |
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APT10045LLLG
MOSFET N-CH 1000V 23A TO264 |
Microchip Technology | Active | — | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | — | N-Channel | — | 1000 V | 23A (Tc) | 450mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154 nC @ 10 V | 4350 pF @ 25 V | — | — | — |
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APT10050B2VFRG
MOSFET N-CH 1000V 21A T-MAX |
Microchip Technology | Active | — | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | — | N-Channel | — | 1000 V | 21A (Tc) | 500mOhm @ 500mA, 10V | 4V @ 2.5mA | 500 nC @ 10 V | 7900 pF @ 25 V | — | — | — |
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APT10050JVFR
MOSFET N-CH 1000V 19A ISOTOP |
Microchip Technology | Active | — | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | — | N-Channel | — | 1000 V | 19A (Tc) | 500mOhm @ 500mA, 10V | 4V @ 2.5mA | 500 nC @ 10 V | 7900 pF @ 25 V | — | — | — |
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APT10050LVFRG
MOSFET N-CH 1000V 21A TO264 |
Microchip Technology | Active | — | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | — | N-Channel | — | 1000 V | 21A (Tc) | 500mOhm @ 500mA, 10V | 4V @ 2.5mA | 500 nC @ 10 V | 7900 pF @ 25 V | — | — | — |
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APT10050LVRG
MOSFET N-CH 1000V 21A TO264 |
Microchip Technology | Active | — | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | — | N-Channel | — | 1000 V | 21A (Tc) | 500mOhm @ 500mA, 10V | 4V @ 2.5mA | 500 nC @ 10 V | 7900 pF @ 25 V | — | — | — |
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APT10078BFLLG
MOSFET N-CH 1000V 14A TO247 |
Microchip Technology | Active | — | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | — | N-Channel | — | 1000 V | 14A (Tc) | 780mOhm @ 7A, 10V | 5V @ 1mA | 95 nC @ 10 V | 2525 pF @ 25 V | — | — | — |
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APT10078BLLG
MOSFET N-CH 1000V 14A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 403W (Tc) | N-Channel | — | 1000 V | 14A (Tc) | 780mOhm @ 7A, 10V | 5V @ 1mA | 95 nC @ 10 V | 2525 pF @ 25 V | 10V | ±30V | — |
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APT10078SLLG
MOSFET N-CH 1000V 14A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3 [S] | 403W (Tc) | N-Channel | — | 1000 V | 14A (Tc) | 780mOhm @ 7A, 10V | 5V @ 1mA | 95 nC @ 10 V | 2525 pF @ 25 V | 10V | ±30V | — |
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APT10086BVFRG
MOSFET N-CH 1000V 13A TO247 |
Microchip Technology | Active | — | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | — | N-Channel | — | 1000 V | 13A (Tc) | 860mOhm @ 500mA, 10V | 4V @ 1mA | 275 nC @ 10 V | 4440 pF @ 25 V | — | — | — |
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APT10086BVRG
MOSFET N-CH 1000V 13A TO247 |
Microchip Technology | Active | — | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | — | N-Channel | — | 1000 V | 13A (Tc) | 860mOhm @ 500mA, 10V | 4V @ 1mA | 275 nC @ 10 V | 4440 pF @ 25 V | — | — | — |
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APT10090BFLLG
MOSFET N-CH 1000V 12A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 298W (Tc) | N-Channel | — | 1000 V | 12A (Tc) | 950mOhm @ 6A, 10V | 5V @ 1mA | 71 nC @ 10 V | 1969 pF @ 25 V | 10V | ±30V | — |
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APT10090BLLG
MOSFET N-CH 1000V 12A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 298W (Tc) | N-Channel | — | 1000 V | 12A (Tc) | 950mOhm @ 6A, 10V | 5V @ 1mA | 71 nC @ 10 V | 1969 pF @ 25 V | 10V | ±30V | — |
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APT10090SLLG
MOSFET N-CH 1000V 12A D3PAK |
Microchip Technology | Active | — | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3 [S] | — | N-Channel | — | 1000 V | 12A (Tc) | 900mOhm @ 6A, 10V | 5V @ 1mA | 71 nC @ 10 V | 1969 pF @ 25 V | — | — | — |
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APT100F50J
MOSFET N-CH 500V 103A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 960W (Tc) | N-Channel | — | 500 V | 103A (Tc) | 36mOhm @ 75A, 10V | 5V @ 5mA | 620 nC @ 10 V | 24600 pF @ 25 V | 10V | ±30V | — |
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APT100M50J
MOSFET N-CH 500V 103A SOT227 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | SOT-227 | 960W (Tc) | N-Channel | — | 500 V | 103A (Tc) | 38mOhm @ 75A, 10V | 5V @ 5mA | 620 nC @ 10 V | 24600 pF @ 25 V | 10V | ±30V | — |
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APT100MC120JCU2
SICFET N-CH 1200V 143A SOT227 |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SiCFET (Silicon Carbide) | SOT-227 | 600W (Tc) | N-Channel | — | 1200 V | 143A (Tc) | 17mOhm @ 100A, 20V | 2.3V @ 2mA | 360 nC @ 20 V | 5960 pF @ 1000 V | 20V | +25V, -10V | — |
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APT106N60B2C6
MOSFET N-CH 600V 106A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 833W (Tc) | N-Channel | — | 600 V | 106A (Tc) | 35mOhm @ 53A, 10V | 3.5V @ 3.4mA | 308 nC @ 10 V | 8390 pF @ 25 V | 10V | ±20V | — |
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APT106N60LC6
MOSFET N-CH 600V 106A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 (L) | 833W (Tc) | N-Channel | — | 600 V | 106A (Tc) | 35mOhm @ 53A, 10V | 3.5V @ 3.4mA | 308 nC @ 10 V | 8390 pF @ 25 V | 10V | ±20V | — |
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APT10M07JVFR
MOSFET N-CH 100V 225A ISOTOP |
Microchip Technology | Active | — | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | — | N-Channel | — | 100 V | 225A (Tc) | 7mOhm @ 500mA, 10V | 4V @ 5mA | 1050 nC @ 10 V | 21600 pF @ 25 V | — | — | — |
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APT10M07JVR
MOSFET N-CH 100V 225A ISOTOP |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 700W (Tc) | N-Channel | — | 100 V | 225A (Tc) | — | 4V @ 5mA | 1050 nC @ 10 V | 21600 pF @ 25 V | 10V | ±30V | — |
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APT10M09B2VFRG
MOSFET N-CH 100V 100A T-MAX |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 625W (Tc) | N-Channel | — | 100 V | 100A (Tc) | 9mOhm @ 50A, 10V | 4V @ 2.5mA | 350 nC @ 10 V | 9875 pF @ 25 V | 10V | ±30V | — |
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APT10M09LVFRG
MOSFET N-CH 100V 100A TO264 |
Microchip Technology | Active | — | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | — | N-Channel | — | 100 V | 100A (Tc) | 9mOhm @ 50A, 10V | 4V @ 2.5mA | 350 nC @ 10 V | 9875 pF @ 25 V | — | — | — |
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APT10M11B2VFRG
MOSFET N-CH 100V 100A T-MAX |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ | 520W (Tc) | N-Channel | — | 100 V | 100A (Tc) | 11mOhm @ 500mA, 10V | 4V @ 2.5mA | 450 nC @ 10 V | 10300 pF @ 25 V | 10V | ±30V | — |
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APT10M11JVFR
MOSFET N-CH 100V 144A ISOTOP |
Microchip Technology | Active | — | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | — | N-Channel | — | 100 V | 144A (Tc) | 11mOhm @ 500mA, 10V | 4V @ 2.5mA | 450 nC @ 10 V | 10380 pF @ 25 V | — | — | — |
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APT10M11JVR
MOSFET N-CH 100V 144A ISOTOP |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 450W (Tc) | N-Channel | — | 100 V | 144A (Tc) | — | 4V @ 2.5mA | 450 nC @ 10 V | 10300 pF @ 25 V | 10V | ±30V | — |
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APT10M11JVRU2
MOSFET N-CH 100V 142A SOT227 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | SOT-227 | 450W (Tc) | N-Channel | — | 100 V | 142A (Tc) | 11mOhm @ 71A, 10V | 4V @ 2.5mA | 300 nC @ 10 V | 8600 pF @ 25 V | 10V | ±30V | — |
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APT10M11JVRU3
MOSFET N-CH 100V 142A SOT227 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | SOT-227 | 450W (Tc) | N-Channel | — | 100 V | 142A (Tc) | 11mOhm @ 71A, 10V | 4V @ 2.5mA | 300 nC @ 10 V | 8600 pF @ 25 V | 10V | ±30V | — |
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APT10M11LVRG
MOSFET N-CH 100V 100A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 (L) | 520W (Tc) | N-Channel | — | 100 V | 100A (Tc) | 11mOhm @ 50A, 10V | 4V @ 2.5mA | 450 nC @ 10 V | 10300 pF @ 25 V | 10V | ±30V | — |
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APT10M19BVRG
MOSFET N-CH 100V 75A TO247 |
Microchip Technology | Active | — | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | — | N-Channel | — | 100 V | 75A (Tc) | 19mOhm @ 500mA, 10V | 4V @ 1mA | 300 nC @ 10 V | 6120 pF @ 25 V | — | — | — |
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APT10M19SVFRG
MOSFET N-CH 100V 75A D3PAK |
Microchip Technology | Active | — | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3 [S] | — | N-Channel | — | 100 V | 75A (Tc) | 19mOhm @ 37.5A, 10V | 4V @ 1mA | 300 nC @ 10 V | 6120 pF @ 25 V | — | — | — |
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APT10M19SVRG
MOSFET N-CH 100V 75A D3PAK |
Microchip Technology | Active | — | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3 [S] | — | N-Channel | — | 100 V | 75A (Tc) | 19mOhm @ 500mA, 10V | 4V @ 1mA | 300 nC @ 10 V | 6120 pF @ 25 V | — | — | — |
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APT10M25BVRG
MOSFET N-CH 100V 75A TO247 |
Microchip Technology | Active | — | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | — | N-Channel | — | 100 V | 75A (Tc) | 25mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | 5160 pF @ 25 V | — | — | — |
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APT11F80B
MOSFET N-CH 800V 12A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 337W (Tc) | N-Channel | — | 800 V | 12A (Tc) | 900mOhm @ 6A, 10V | 5V @ 1mA | 80 nC @ 10 V | 2471 pF @ 25 V | 10V | ±30V | — |
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APT11F80S
MOSFET N-CH 800V 12A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3PAK | 337W (Tc) | N-Channel | — | 800 V | 12A (Tc) | 900mOhm @ 6A, 10V | 5V @ 1mA | 80 nC @ 10 V | 2471 pF @ 25 V | 10V | ±30V | — |
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APT11N80BC3G
MOSFET N-CH 800V 11A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 156W (Tc) | N-Channel | — | 800 V | 11A (Tc) | 450mOhm @ 7.1A, 10V | 3.9V @ 680µA | 60 nC @ 10 V | 1585 pF @ 25 V | 10V | ±20V | — |
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APT11N80KC3G
MOSFET N-CH 800V 11A TO220 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 [K] | 156W (Tc) | N-Channel | — | 800 V | 11A (Tc) | 450mOhm @ 7.1A, 10V | 3.9V @ 680µA | 60 nC @ 10 V | 1585 pF @ 25 V | 10V | ±20V | — |
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APT1201R2BFLLG
MOSFET N-CH 1200V 12A TO247 |
Microchip Technology | Active | — | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | — | N-Channel | — | 1200 V | 12A (Tc) | 1.25Ohm @ 6A, 10V | 5V @ 1mA | 100 nC @ 10 V | 2540 pF @ 25 V | — | — | — |
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APT1201R2BLLG
MOSFET N-CH 1200V 12A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 400W (Tc) | N-Channel | — | 1200 V | 12A (Tc) | 1.2Ohm @ 6A, 10V | 5V @ 1mA | 150 nC @ 10 V | 3100 pF @ 25 V | 10V | ±30V | — |
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APT1201R4BFLLG
MOSFET N-CH 1200V 9A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 300W (Tc) | N-Channel | — | 1200 V | 9A (Tc) | 1.5Ohm @ 4.5A, 10V | 5V @ 1mA | 75 nC @ 10 V | 2030 pF @ 25 V | 10V | ±30V | — |
|
APT1201R4BLLG
MOSFET N-CH 1200V 9A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 300W (Tc) | N-Channel | — | 1200 V | 9A (Tc) | 1.4Ohm @ 4.5A, 10V | 5V @ 1mA | 120 nC @ 10 V | 2500 pF @ 25 V | 10V | ±30V | — |
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APT1201R4SFLLG
MOSFET N-CH 1200V 9A D3PAK |
Microchip Technology | Active | — | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3 [S] | — | N-Channel | — | 1200 V | 9A (Tc) | 1.4Ohm @ 4.5A, 10V | 5V @ 1mA | 120 nC @ 10 V | 2500 pF @ 25 V | — | — | — |
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APT1201R5BVFRG
MOSFET N-CH 1200V 10A TO247 |
Microchip Technology | Active | — | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | — | N-Channel | — | 1200 V | 10A (Tc) | 1.5Ohm @ 5A, 10V | 4V @ 1mA | 285 nC @ 10 V | 4440 pF @ 25 V | 10V | — | — |
|
APT1201R5BVRG
MOSFET N-CH 1200V 10A TO247 |
Microchip Technology | Active | — | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | — | N-Channel | — | 1200 V | 10A (Tc) | 1.5Ohm @ 5A, 10V | 4V @ 1mA | 28 nC @ 10 V | 4440 pF @ 25 V | 10V | — | — |
|
APT1201R6BVFRG
MOSFET N-CH 1200V 8A TO247 |
Microchip Technology | Active | — | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | — | N-Channel | — | 1200 V | 8A (Tc) | 1.6Ohm @ 4A, 10V | 4V @ 1mA | 230 nC @ 10 V | 3660 pF @ 25 V | — | — | — |