Transistörler - FET, MOSFET - Tekil
- Komponent
- 40,131
- Marka
- 50
Komponentler
10,000 sonuç · Sayfa 61/200| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT1201R6BVRG
MOSFET N-CH 1200V 8A TO-247 |
Microchip Technology | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
APT1201R6SVFRG
MOSFET N-CH 1200V 8A D3PAK |
Microchip Technology | Active | — | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3 [S] | — | N-Channel | — | 1200 V | 8A (Tc) | 1.6Ohm @ 4A, 10V | 4V @ 1mA | 230 nC @ 10 V | 3660 pF @ 25 V | — | — | — |
|
APT12031JFLL
MOSFET N-CH 1200V 30A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 690AW (Tc) | N-Channel | — | 1200 V | 30A (Tc) | 330mOhm @ 15A, 10V | 5V @ 5mA | 365 nC @ 10 V | 9480 pF @ 25 V | 10V | ±30V | — |
|
APT12040JVR
MOSFET N-CH 1200V 26A SOT227 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | SOT-227 (ISOTOP®) | 700W (Tc) | N-Channel | — | 1200 V | 26A (Tc) | 400mOhm @ 13A, 10V | 4V @ 5mA | 1200 nC @ 10 V | 18000 pF @ 25 V | 10V | ±30V | — |
|
APT1204R7BFLLG
MOSFET N-CH 1200V 3.5A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 135W (Tc) | N-Channel | — | 1200 V | 3.5A (Tc) | 4.7Ohm @ 1.75A, 10V | 5V @ 1mA | 31 nC @ 10 V | 715 pF @ 25 V | 10V | ±30V | — |
|
APT1204R7KFLLG
MOSFET N-CH 1200V 3.5A TO220 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 [K] | 135W (Tc) | N-Channel | — | 1200 V | 3.5A (Tc) | 4.7Ohm @ 1.75A, 10V | 5V @ 1mA | 31 nC @ 10 V | 715 pF @ 25 V | 10V | ±30V | — |
|
APT1204R7SFLLG
MOSFET N-CH 1200V 3.5A D3PAK |
Microchip Technology | Active | — | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3 [S] | — | N-Channel | — | 1200 V | 3.5A (Tc) | 4.7Ohm @ 1.75A, 10V | 5V @ 1mA | 31 nC @ 10 V | 715 pF @ 25 V | — | — | — |
|
APT12057B2FLLG
MOSFET N-CH 1200V 22A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 690W (Tc) | N-Channel | — | 1200 V | 22A (Tc) | 570mOhm @ 11A, 10V | 5V @ 2.5mA | 185 nC @ 10 V | 5155 pF @ 25 V | 10V | ±30V | — |
|
APT12057B2LLG
MOSFET N-CH 1200V 22A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | T-MAX™ [B2] | 690W (Tc) | N-Channel | — | 1200 V | 22A (Tc) | 570mOhm @ 11A, 10V | 5V @ 2.5mA | 290 nC @ 10 V | 6200 pF @ 25 V | 10V | ±30V | — |
|
APT12057JFLL
MOSFET N-CH 1200V 19A ISOTOP |
Microchip Technology | Active | — | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | — | N-Channel | — | 1200 V | 19A (Tc) | 570mOhm @ 9.5A, 10V | 5V @ 2.5mA | 185 nC @ 10 V | 5155 pF @ 25 V | — | — | — |
|
APT12057JLL
MOSFET N-CH 1200V 19A SOT227 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | SOT-227 | 520W (Tc) | N-Channel | — | 1200 V | 19A (Tc) | 570mOhm @ 10A, 10V | 5V @ 2.5mA | 290 nC @ 10 V | 6200 pF @ 25 V | 10V | ±30V | — |
|
APT12057LFLLG
MOSFET N-CH 1200V 22A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | 690W (Tc) | N-Channel | — | 1200 V | 22A (Tc) | 570mOhm @ 11A, 10V | 5V @ 2.5mA | 185 nC @ 10 V | 5155 pF @ 25 V | 10V | ±30V | — |
|
APT12060LVFRG
MOSFET N-CH 1200V 20A TO264 |
Microchip Technology | Active | — | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | — | N-Channel | — | 1200 V | 20A (Tc) | 600mOhm @ 10A, 10V | 4V @ 1mA | 650 nC @ 10 V | 9500 pF @ 25 V | — | — | — |
|
APT12060LVRG
MOSFET N-CH 1200V 20A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 (L) | 625W (Tc) | N-Channel | — | 1200 V | 20A (Tc) | 600mOhm @ 10A, 10V | 4V @ 2.5mA | 650 nC @ 10 V | 9500 pF @ 25 V | 10V | ±30V | — |
|
APT12067B2LLG
MOSFET N-CH 1200V 18A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 565W (Tc) | N-Channel | — | 1200 V | 18A (Tc) | 670mOhm @ 9A, 10V | 5V @ 2.5mA | 150 nC @ 10 V | 4420 pF @ 25 V | 10V | ±30V | — |
|
APT12067JLL
MOSFET N-CH 1200V 17A SOT227 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | SOT-227 | 460W (Tc) | N-Channel | — | 1200 V | 17A (Tc) | 570mOhm @ 10A, 10V | 5V @ 2.5mA | 290 nC @ 10 V | 6200 pF @ 25 V | 10V | ±30V | — |
|
APT12067LFLLG
MOSFET N-CH 1200V 18A TO264 |
Microchip Technology | Active | — | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | — | N-Channel | — | 1200 V | 18A (Tc) | 670mOhm @ 9A, 10V | 5V @ 2.5mA | 150 nC @ 10 V | 4420 pF @ 25 V | — | — | — |
|
APT12080JVFR
MOSFET N-CH 1200V 15A ISOTOP |
Microchip Technology | Active | — | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | — | N-Channel | — | 1200 V | 15A (Tc) | 800mOhm @ 7.5A, 10V | 4V @ 2.5mA | 485 nC @ 10 V | 7800 pF @ 25 V | — | — | — |
|
APT12080JVR
MOSFET N-CH 1200V 15A ISOTOP |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 450W (Tc) | N-Channel | — | 1200 V | 15A (Tc) | 800mOhm @ 7.5A, 10V | 4V @ 2.5mA | 485 nC @ 10 V | 7800 pF @ 25 V | 10V | ±30V | — |
|
APT12080LVRG
MOSFET N-CH 1200V 16A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 (L) | 520W (Tc) | N-Channel | — | 1200 V | 16A (Tc) | 800mOhm @ 8A, 10V | 4V @ 2.5mA | 485 nC @ 10 V | 7800 pF @ 25 V | 10V | ±30V | — |
|
APT12F60K
MOSFET N-CH 600V 12A TO220 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 [K] | 225W (Tc) | N-Channel | — | 600 V | 12A (Tc) | 620mOhm @ 6A, 10V | 5V @ 500µA | 55 nC @ 10 V | 2200 pF @ 25 V | 10V | ±30V | — |
|
APT12M80B
MOSFET N-CH 800V 13A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 335W (Tc) | N-Channel | — | 800 V | 13A (Tc) | 800mOhm @ 6A, 10V | 5V @ 1mA | 80 nC @ 10 V | 2470 pF @ 25 V | 10V | ±30V | — |
|
APT130SM70B
SICFET N-CH 700V 110A TO247-3 |
Microchip Technology | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | 556W (Tc) | N-Channel | — | 700 V | 110A (Tc) | 45mOhm @ 60A, 20V | 2.4V @ 1mA | 220 nC @ 20 V | 3950 pF @ 700 V | 20V | +25V, -10V | — |
|
APT130SM70J
SICFET N-CH 700V 78A SOT227 |
Microchip Technology | Obsolete | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SiCFET (Silicon Carbide) | SOT-227 (ISOTOP®) | 273W (Tc) | N-Channel | — | 700 V | 78A (Tc) | 45mOhm @ 60A, 20V | 2.4V @ 1mA | 270 nC @ 20 V | 3950 pF @ 700 V | 20V | +25V, -10V | — |
|
APT130SM70S
MOSFET N-CH 700V D3PAK |
Microchip Technology | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
APT13F120B
MOSFET N-CH 1200V 14A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 625W (Tc) | N-Channel | — | 1200 V | 14A (Tc) | 1.4Ohm @ 7A, 10V | 5V @ 1mA | 145 nC @ 10 V | 4765 pF @ 25 V | 10V | ±30V | — |
|
APT13F120S
MOSFET N-CH 1200V 14A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3PAK | 625W (Tc) | N-Channel | — | 1200 V | 14A (Tc) | 1.2Ohm @ 7A, 10V | 5V @ 1mA | 145 nC @ 10 V | 4765 pF @ 25 V | 10V | ±30V | — |
|
APT14050JVFR
MOSFET N-CH 1400V 23A ISOTOP |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 694W (Tc) | N-Channel | — | 1400 V | 23A (Tc) | 500mOhm @ 11.5A, 10V | 4V @ 5mA | 820 nC @ 10 V | 13500 pF @ 25 V | 10V | ±30V | — |
|
APT14F100B
MOSFET N-CH 1000V 14A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 500W (Tc) | N-Channel | — | 1000 V | 14A (Tc) | 980mOhm @ 7A, 10V | 5V @ 1mA | 120 nC @ 10 V | 3965 pF @ 25 V | 10V | ±30V | — |
|
APT14F100S
MOSFET N-CH 1000V 14A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3PAK | 500W (Tc) | N-Channel | — | 1000 V | 14A (Tc) | 980mOhm @ 7A, 10V | 5V @ 1mA | 120 nC @ 10 V | 3965 pF @ 25 V | 10V | ±30V | — |
|
APT14M100B
MOSFET N-CH 1000V 14A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 500W (Tc) | N-Channel | — | 1000 V | 14A (Tc) | 900mOhm @ 7A, 10V | 5V @ 1mA | 120 nC @ 10 V | 3965 pF @ 25 V | 10V | ±30V | — |
|
APT14M100S
MOSFET N-CH 1000V 14A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D3PAK | 500W (Tc) | N-Channel | — | 1000 V | 14A (Tc) | 880mOhm @ 7A, 10V | 5V @ 1mA | 120 nC @ 10 V | 3965 pF @ 25 V | 10V | ±30V | — |
|
APT14M120B
MOSFET N-CH 1200V 14A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 625W (Tc) | N-Channel | — | 1200 V | 14A (Tc) | 1.2Ohm @ 7A, 10V | 5V @ 1mA | 145 nC @ 10 V | 4765 pF @ 25 V | 10V | ±30V | — |
|
APT14M120S
MOSFET N-CH 1200V 14A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3PAK | 625W (Tc) | N-Channel | — | 1200 V | 14A (Tc) | 1.1Ohm @ 7A, 10V | 5V @ 1mA | 145 nC @ 10 V | 4765 pF @ 25 V | 10V | ±30V | — |
|
APT15F50K
MOSFET N-CH 500V 15A TO220 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 [K] | 223W (Tc) | N-Channel | — | 500 V | 15A (Tc) | 390mOhm @ 7A, 10V | 5V @ 500µA | 55 nC @ 10 V | 2250 pF @ 25 V | — | — | — |
|
APT15F60B
MOSFET N-CH 600V 16A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 290W (Tc) | N-Channel | — | 600 V | 16A (Tc) | 430mOhm @ 7A, 10V | 5V @ 500µA | 72 nC @ 10 V | 2882 pF @ 25 V | 10V | ±30V | — |
|
APT15F60S
MOSFET N-CH 600V 16A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3PAK | 290W (Tc) | N-Channel | — | 600 V | 16A (Tc) | 430mOhm @ 7A, 10V | 5V @ 500µA | 72 nC @ 10 V | 2882 pF @ 25 V | 10V | ±30V | — |
|
APT17F100B
MOSFET N-CH 1000V 17A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 625W (Tc) | N-Channel | — | 1000 V | 17A (Tc) | 800mOhm @ 9A, 10V | 5V @ 1mA | 150 nC @ 10 V | 4845 pF @ 25 V | 10V | ±30V | — |
|
APT17F100S
MOSFET N-CH 1000V 17A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3PAK | 625W (Tc) | N-Channel | — | 1000 V | 17A (Tc) | 780mOhm @ 9A, 10V | 5V @ 1mA | 150 nC @ 10 V | 4845 pF @ 25 V | 10V | ±30V | — |
|
APT17F120J
MOSFET N-CH 1200V 18A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 545W (Tc) | N-Channel | — | 1200 V | 18A (Tc) | 580mOhm @ 14A, 10V | 5V @ 2.5mA | 300 nC @ 10 V | 9670 pF @ 25 V | 10V | ±30V | — |
|
APT17F80B
MOSFET N-CH 800V 18A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 500W (Tc) | N-Channel | — | 800 V | 18A (Tc) | 580mOhm @ 9A, 10V | 5V @ 1mA | 122 nC @ 10 V | 3757 pF @ 25 V | 10V | ±30V | — |
|
APT17F80S
MOSFET N-CH 800V 18A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3PAK | 500W (Tc) | N-Channel | — | 800 V | 18A (Tc) | 580mOhm @ 9A, 10V | 5V @ 1mA | 122 nC @ 10 V | 3757 pF @ 25 V | 10V | ±30V | — |
|
APT17N80BC3G
MOSFET N-CH 800V 17A TO247-3 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 208W (Tc) | N-Channel | — | 800 V | 17A (Tc) | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 90 nC @ 10 V | 2250 pF @ 25 V | 10V | ±20V | — |
|
APT17N80SC3G
MOSFET N-CH 800V 17A D3PAK |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3PAK | 208W (Tc) | N-Channel | — | 800 V | 17A (Tc) | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 90 nC @ 10 V | 2250 pF @ 25 V | 10V | ±20V | — |
|
APT18F60B
MOSFET N-CH 600V 19A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 335W (Tc) | N-Channel | — | 600 V | 19A (Tc) | 390mOhm @ 9A, 10V | 5V @ 1mA | 90 nC @ 10 V | 3550 pF @ 25 V | 10V | ±30V | — |
|
APT18F60S
MOSFET N-CH 600V 19A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3PAK | 335W (Tc) | N-Channel | — | 600 V | 19A (Tc) | 370mOhm @ 9A, 10V | 5V @ 1mA | 90 nC @ 10 V | 3550 pF @ 25 V | 10V | ±30V | — |
|
APT18M100B
MOSFET N-CH 1000V 18A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 625W (Tc) | N-Channel | — | 1000 V | 18A (Tc) | 700mOhm @ 9A, 10V | 5V @ 1mA | 150 nC @ 10 V | 4845 pF @ 25 V | 10V | ±30V | — |
|
APT18M100S
MOSFET N-CH 1000V 18A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3PAK | 625W (Tc) | N-Channel | — | 1000 V | 18A (Tc) | 700mOhm @ 9A, 10V | 5V @ 1mA | 150 nC @ 10 V | 4845 pF @ 25 V | 10V | ±30V | — |
|
APT18M80B
MOSFET N-CH 800V 19A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 500W (Tc) | N-Channel | — | 800 V | 19A (Tc) | 530mOhm @ 9A, 10V | 5V @ 1mA | 120 nC @ 10 V | 3760 pF @ 25 V | 10V | ±30V | — |
|
APT18M80S
MOSFET N-CH 800V 19A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D3PAK | 500W (Tc) | N-Channel | — | 800 V | 19A (Tc) | 530mOhm @ 9A, 10V | 5V @ 1mA | 120 nC @ 10 V | 3760 pF @ 25 V | 10V | ±30V | — |