Transistörler - FET, MOSFET - Tekil
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Komponentler
10,000 sonuç · Sayfa 64/200| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT33N90JCU2
MOSFET N-CH 900V 33A SOT227 |
Microchip Technology | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | SOT-227 | 290W (Tc) | N-Channel | Super Junction | 900 V | 33A (Tc) | 120mOhm @ 26A, 10V | 3.5V @ 3mA | 270 nC @ 10 V | 6800 pF @ 100 V | 10V | ±20V | — |
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APT33N90JCU3
MOSFET N-CH 900V 33A SOT227 |
Microchip Technology | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | SOT-227 | 290W (Tc) | N-Channel | Super Junction | 900 V | 33A (Tc) | 120mOhm @ 26A, 10V | 3.5V @ 3mA | 270 nC @ 10 V | 6800 pF @ 100 V | 10V | ±20V | — |
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APT34F100B2
MOSFET N-CH 1000V 35A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 1135W (Tc) | N-Channel | — | 1000 V | 35A (Tc) | 380mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | 9835 pF @ 25 V | 10V | ±30V | — |
|
APT34F100L
MOSFET N-CH 1000V 35A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | 1135W (Tc) | N-Channel | — | 1000 V | 35A (Tc) | 400mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | 9835 pF @ 25 V | 10V | ±30V | — |
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APT34F60B
MOSFET N-CH 600V 36A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 624W (Tc) | N-Channel | — | 600 V | 36A (Tc) | 210mOhm @ 17A, 10V | 5V @ 1mA | 165 nC @ 10 V | 6640 pF @ 25 V | 10V | ±30V | — |
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APT34F60BG
MOSFET N-CH 600V 34A TO247-3 |
Microchip Technology | Market | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 624W (Tc) | N-Channel | — | 600 V | 34A (Tc) | 210mOhm @ 17A, 10V | 5V @ 1mA | 165 nC @ 10 V | 6640 pF @ 25 V | 10V | ±30V | — |
|
APT34F60S
MOSFET N-CH 600V 36A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3PAK | 624W (Tc) | N-Channel | — | 600 V | 36A (Tc) | 190mOhm @ 17A, 10V | 5V @ 1mA | 165 nC @ 10 V | 6640 pF @ 25 V | 10V | ±30V | — |
|
APT34F60S/TR
MOSFET N-CH 600V 36A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3PAK | 624W (Tc) | N-Channel | — | 600 V | 36A (Tc) | 190mOhm @ 17A, 10V | 5V @ 1mA | 165 nC @ 10 V | 6640 pF @ 25 V | 10V | ±30V | — |
|
APT34M120J
MOSFET N-CH 1200V 35A SOT227 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | SOT-227 | 960W (Tc) | N-Channel | — | 1200 V | 35A (Tc) | 300mOhm @ 25A, 10V | 5V @ 2.5mA | 560 nC @ 10 V | 18200 pF @ 25 V | 10V | ±30V | — |
|
APT34M60B
MOSFET N-CH 600V 36A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 624W (Tc) | N-Channel | — | 600 V | 36A (Tc) | 190mOhm @ 17A, 10V | 5V @ 1mA | 165 nC @ 10 V | 6640 pF @ 25 V | 10V | ±30V | — |
|
APT34M60S
MOSFET N-CH 600V 36A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3PAK | 624W (Tc) | N-Channel | — | 600 V | 36A (Tc) | 190mOhm @ 17A, 10V | 5V @ 1mA | 165 nC @ 10 V | 6640 pF @ 25 V | 10V | ±30V | — |
|
APT34M60S/TR
MOSFET N-CH 600V 36A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3PAK | 624W (Tc) | N-Channel | — | 600 V | 36A (Tc) | 190mOhm @ 17A, 10V | 5V @ 1mA | 165 nC @ 10 V | 6640 pF @ 25 V | 10V | ±30V | — |
|
APT34N80B2C3G
MOSFET N-CH 800V 34A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 417W (Tc) | N-Channel | — | 800 V | 34A (Tc) | 145mOhm @ 22A, 10V | 3.9V @ 2mA | 355 nC @ 10 V | 4510 pF @ 25 V | 10V | ±20V | — |
|
APT34N80LC3G
MOSFET N-CH 800V 34A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | 417W (Tc) | N-Channel | — | 800 V | 34A (Tc) | 145mOhm @ 22A, 10V | 3.9V @ 2mA | 355 nC @ 10 V | 4510 pF @ 25 V | 10V | ±20V | — |
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APT35SM70B
SICFET N-CH 700V 35A TO247-3 |
Microchip Technology | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | 176W (Tc) | N-Channel | — | 700 V | 35A (Tc) | 145mOhm @ 10A, 20V | 2.5V @ 1mA | 67 nC @ 20 V | 1035 pF @ 700 V | 20V | +25V, -10V | — |
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APT35SM70S
SICFET 700V 35A TO247-3 |
Microchip Technology | Obsolete | — | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | — | — | — | 700 V | 35A | — | — | — | — | — | — | — |
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APT36N90BC3G
MOSFET N-CH 900V 36A TO247 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 390W (Tc) | N-Channel | Super Junction | 900 V | 36A (Tc) | 120mOhm @ 18A, 10V | 3.5V @ 2.9mA | 252 nC @ 10 V | 7463 pF @ 25 V | 10V | ±20V | — |
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APT37F50B
MOSFET N-CH 500V 37A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 520W (Tc) | N-Channel | — | 500 V | 37A (Tc) | 150mOhm @ 18A, 10V | 5V @ 1mA | 145 nC @ 10 V | 5710 pF @ 25 V | 10V | ±30V | — |
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APT37F50S
MOSFET N-CH 500V 37A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3PAK | 520W (Tc) | N-Channel | — | 500 V | 37A (Tc) | 150mOhm @ 18A, 10V | 5V @ 1mA | 145 nC @ 10 V | 5710 pF @ 25 V | 10V | ±30V | — |
|
APT37M100B2
MOSFET N-CH 1000V 37A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 1135W (Tc) | N-Channel | — | 1000 V | 37A (Tc) | 330mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | 9835 pF @ 25 V | 10V | ±30V | — |
|
APT37M100L
MOSFET N-CH 1000V 37A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 | 1135W (Tc) | N-Channel | — | 1000 V | 37A (Tc) | 330mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | 9835 pF @ 25 V | 10V | ±30V | — |
|
APT38F50J
MOSFET N-CH 500V 38A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 355W (Tc) | N-Channel | — | 500 V | 38A (Tc) | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220 nC @ 10 V | 8800 pF @ 25 V | 10V | ±30V | — |
|
APT38F80B2
MOSFET N-CH 800V 41A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 1040W (Tc) | N-Channel | — | 800 V | 41A (Tc) | 240mOhm @ 20A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | 8070 pF @ 25 V | 10V | ±30V | — |
|
APT38F80L
MOSFET N-CH 800V 41A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | 1040W (Tc) | N-Channel | — | 800 V | 41A (Tc) | 240mOhm @ 20A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | 8070 pF @ 25 V | 10V | ±30V | — |
|
APT38M50J
MOSFET N-CH 500V 38A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 357W (Tc) | N-Channel | — | 500 V | 38A (Tc) | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220 nC @ 10 V | 8800 pF @ 25 V | 10V | ±30V | — |
|
APT38N60BC6
MOSFET N-CH 600V 38A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 278W (Tc) | N-Channel | — | 600 V | 38A (Tc) | 99mOhm @ 18A, 10V | 3.5V @ 1.2mA | 112 nC @ 10 V | 2826 pF @ 25 V | 10V | ±20V | — |
|
APT38N60SC6
MOSFET N-CH 600V 38A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D3PAK | 278W (Tc) | N-Channel | — | 600 V | 38A (Tc) | 99mOhm @ 18A, 10V | 3.5V @ 1.2mA | 112 nC @ 10 V | 2826 pF @ 25 V | 10V | ±20V | — |
|
APT39F60J
MOSFET N-CH 600V 42A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 480W (Tc) | N-Channel | — | 600 V | 42A (Tc) | 110mOhm @ 28A, 10V | 5V @ 2.5mA | 280 nC @ 10 V | 11300 pF @ 25 V | 10V | ±30V | — |
|
APT39M60J
MOSFET N-CH 600V 42A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 480W (Tc) | N-Channel | — | 600 V | 42A (Tc) | 110mOhm @ 28A, 10V | 5V @ 2.5mA | 280 nC @ 10 V | 11300 pF @ 25 V | 10V | ±30V | — |
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APT4012BVR
MOSFET N-CH 400V 37A TO247AD |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247AD | 370W (Tc) | N-Channel | — | 400 V | 37A (Tc) | 120mOhm @ 18.5A, 10V | 4V @ 1mA | 290 nC @ 10 V | 5400 pF @ 25 V | 10V | ±30V | — |
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APT4012BVRG
MOSFET N-CH 400V 37A TO247AD |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247AD | 370W (Tc) | N-Channel | — | 400 V | 37A (Tc) | 120mOhm @ 18.5A, 10V | 4V @ 1mA | 290 nC @ 10 V | 5400 pF @ 25 V | 10V | ±30V | — |
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APT4014BVFRG
MOSFET N-CH 400V 28A TO247 |
Microchip Technology | Active | — | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | — | N-Channel | — | 400 V | 28A (Tc) | 140mOhm @ 500mA, 10V | 4V @ 1mA | 160 nC @ 10 V | 3600 pF @ 25 V | — | — | — |
|
APT4016BVRG
MOSFET N-CH 400V TO-247 |
Microchip Technology | Obsolete | — | — | — | — | — | — | — | — | — | 27A (Tc) | — | — | — | — | — | — | — |
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APT4065BNG
MOSFET N-CH 400V 11A TO247AD |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247AD | 180W (Tc) | N-Channel | — | 400 V | 11A (Tc) | 650mOhm @ 5.5A, 10V | 4V @ 1mA | 55 nC @ 10 V | 950 pF @ 25 V | 10V | ±30V | — |
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APT40M35JVFR
MOSFET N-CH 400V 93A ISOTOP |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 700W (Tc) | N-Channel | — | 400 V | 93A (Tc) | 35mOhm @ 46.5A, 10V | 4V @ 5mA | 1065 nC @ 10 V | 20160 pF @ 25 V | 10V | ±30V | — |
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APT40M35JVR
MOSFET N-CH 400V 93A SOT227 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | SOT-227 (ISOTOP®) | 700W (Tc) | N-Channel | — | 400 V | 93A (Tc) | 35mOhm @ 46.5A, 10V | 4V @ 5mA | 1065 nC @ 10 V | 20160 pF @ 25 V | 10V | ±30V | — |
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APT40M42JN
MOSFET N-CH 400V 86A ISOTOP |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 690W (Tc) | N-Channel | — | 400 V | 86A (Tc) | 42mOhm @ 43A, 10V | 4V @ 5mA | 760 nC @ 10 V | 14000 pF @ 25 V | 10V | ±30V | — |
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APT40M70JVFR
MOSFET N-CH 400V 53A ISOTOP |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 450W (Tc) | N-Channel | — | 400 V | 53A (Tc) | 70mOhm @ 26.5A, 10V | 4V @ 2.5mA | 495 nC @ 10 V | 8890 pF @ 25 V | 10V | ±30V | — |
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APT40M70JVR
MOSFET N-CH 400V 53A SOT227 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | SOT-227 (ISOTOP®) | 450W (Tc) | N-Channel | — | 400 V | 53A (Tc) | 70mOhm @ 26.5A, 10V | 4V @ 2.5mA | 495 nC @ 10 V | 8890 pF @ 25 V | 10V | ±30V | — |
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APT40M70LVFRG
MOSFET N-CH 400V 57A TO264 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | 520W (Tc) | N-Channel | — | 400 V | 57A (Tc) | 70mOhm @ 500mA, 10V | 4V @ 2.5mA | 495 nC @ 10 V | 8890 pF @ 25 V | 10V | ±30V | — |
|
APT40M70LVRG
MOSFET N-CH 400V 57A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 (L) | 520W (Tc) | N-Channel | — | 400 V | 57A (Tc) | 70mOhm @ 28.5A, 10V | 4V @ 2.5mA | 495 nC @ 10 V | 8890 pF @ 25 V | 10V | ±30V | — |
|
APT40M75JN
MOSFET N-CH 400V 56A ISOTOP |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 520W (Tc) | N-Channel | — | 400 V | 56A (Tc) | 75mOhm @ 28A, 10V | 4V @ 2.5mA | 370 nC @ 10 V | 6800 pF @ 25 V | 10V | ±30V | — |
|
APT40N60JCU2
MOSFET N-CH 600V 40A SOT227 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | SOT-227 | 290W (Tc) | N-Channel | — | 600 V | 40A (Tc) | 70mOhm @ 20A, 10V | 3.9V @ 1mA | 259 nC @ 10 V | 7015 pF @ 25 V | 10V | ±20V | — |
|
APT40N60JCU3
MOSFET N-CH 600V 40A SOT227 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | SOT-227 | 290W (Tc) | N-Channel | — | 600 V | 40A (Tc) | 70mOhm @ 20A, 10V | 3.9V @ 1mA | 259 nC @ 10 V | 7015 pF @ 25 V | 10V | ±20V | — |
|
APT40SM120B
SICFET N-CH 1200V 41A TO247 |
Microchip Technology | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247 | 273W (Tc) | N-Channel | — | 1200 V | 41A (Tc) | 100mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130 nC @ 20 V | 2560 pF @ 1000 V | 20V | +25V, -10V | — |
|
APT40SM120J
MOSFET N-CH 1200V 32A SOT227 |
Microchip Technology | Obsolete | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | SOT-227 | 165W (Tc) | N-Channel | — | 1200 V | 32A (Tc) | 100mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130 nC @ 20 V | 2560 pF @ 1000 V | 20V | +25V, -10V | — |
|
APT40SM120S
SICFET N-CH 1200V 41A D3PAK |
Microchip Technology | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | SiCFET (Silicon Carbide) | D3PAK | 273W (Tc) | N-Channel | — | 1200 V | 41A (Tc) | 100mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130 nC @ 20 V | 2560 pF @ 1000 V | 20V | +25V, -10V | — |
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APT41F100J
MOSFET N-CH 1000V 42A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 960W (Tc) | N-Channel | — | 1000 V | 42A (Tc) | 210mOhm @ 33A, 10V | 5V @ 5mA | 570 nC @ 10 V | 18500 pF @ 25 V | 10V | ±30V | — |
|
APT41M80B2
MOSFET N-CH 800V 43A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 1040W (Tc) | N-Channel | — | 800 V | 43A (Tc) | 210mOhm @ 20A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | 8070 pF @ 25 V | 10V | ±30V | — |
|
APT41M80L
MOSFET N-CH 800V 43A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | 1040W (Tc) | N-Channel | — | 800 V | 43A (Tc) | 210mOhm @ 20A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | 8070 pF @ 25 V | 10V | ±30V | — |