Transistörler - FET, MOSFET - Tekil
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Komponentler
10,000 sonuç · Sayfa 63/200| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT24M120B2
MOSFET N-CH 1200V 24A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 1040W (Tc) | N-Channel | — | 1200 V | 24A (Tc) | 630mOhm @ 12A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | 8370 pF @ 25 V | 10V | ±30V | — |
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APT24M120L
MOSFET N-CH 1200V 24A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | 1040W (Tc) | N-Channel | — | 1200 V | 24A (Tc) | 680mOhm @ 12A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | 8370 pF @ 25 V | 10V | ±30V | — |
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APT24M80B
MOSFET N-CH 800V 25A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 625W (Tc) | N-Channel | — | 800 V | 25A (Tc) | 390mOhm @ 12A, 10V | 5V @ 1mA | 150 nC @ 10 V | 4595 pF @ 25 V | 10V | ±30V | — |
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APT24M80S
MOSFET N-CH 800V 25A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D3PAK | 625W (Tc) | N-Channel | — | 800 V | 25A (Tc) | 390mOhm @ 12A, 10V | 5V @ 1mA | 150 nC @ 10 V | 4595 pF @ 25 V | 10V | ±30V | — |
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APT25M100J
MOSFET N-CH 1000V 25A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 545W (Tc) | N-Channel | — | 1000 V | 25A (Tc) | 330mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | 9835 pF @ 25 V | 10V | ±30V | — |
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APT25SM120B
SICFET N-CH 1200V 25A TO247 |
Microchip Technology | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247 | 175W (Tc) | N-Channel | — | 1200 V | 25A (Tc) | 175mOhm @ 10A, 20V | 2.5V @ 1mA | 72 nC @ 20 V | — | 20V | +25V, -10V | — |
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APT25SM120S
SICFET N-CH 1200V 25A D3 |
Microchip Technology | Obsolete | -55°C ~ 175°C (TJ) | Chassis Mount | D-3 Module | SiCFET (Silicon Carbide) | D3 | 175W (Tc) | N-Channel | — | 1200 V | 25A (Tc) | 175mOhm @ 10A, 20V | 2.5V @ 1mA | 72 nC @ 20 V | — | — | — | — |
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APT26F120B2
MOSFET N-CH 1200V 27A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ | 1135W (Tc) | N-Channel | — | 1200 V | 27A (Tc) | 650mOhm @ 14A, 10V | 5V @ 2.5mA | 300 nC @ 10 V | 9670 pF @ 25 V | 10V | ±30V | — |
|
APT26F120L
MOSFET N-CH 1200V 27A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | 1135W (Tc) | N-Channel | — | 1200 V | 27A (Tc) | 650mOhm @ 14A, 10V | 5V @ 2.5mA | 300 nC @ 10 V | 9670 pF @ 25 V | 10V | ±30V | — |
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APT26M100JCU2
MOSFET N-CH 1000V 26A SOT227 |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | SOT-227 | 543W (Tc) | N-Channel | — | 1000 V | 26A (Tc) | 396mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | 7868 pF @ 25 V | 10V | ±30V | — |
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APT26M100JCU3
MOSFET N-CH 1000V 26A SOT227 |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | SOT-227 | 543W (Tc) | N-Channel | — | 1000 V | 26A (Tc) | 396mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | 7868 pF @ 25 V | 10V | ±30V | — |
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APT28F60B
MOSFET N-CH 600V 30A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 520W (Tc) | N-Channel | — | 600 V | 30A (Tc) | 250mOhm @ 14A, 10V | 5V @ 1mA | 140 nC @ 10 V | 5575 pF @ 25 V | 10V | ±30V | — |
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APT28F60S
MOSFET N-CH 600V 30A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3PAK | 520W (Tc) | N-Channel | — | 600 V | 30A (Tc) | 220mOhm @ 14A, 10V | 5V @ 1mA | 140 nC @ 10 V | 5575 pF @ 25 V | 10V | ±30V | — |
|
APT28M120B2
MOSFET N-CH 1200V 29A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 1135W (Tc) | N-Channel | — | 1200 V | 29A (Tc) | 560mOhm @ 14A, 10V | 5V @ 2.5mA | 300 nC @ 10 V | 9670 pF @ 25 V | 10V | ±30V | — |
|
APT28M120L
MOSFET N-CH 1200V 29A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | 1135W (Tc) | N-Channel | — | 1200 V | 29A (Tc) | 530mOhm @ 14A, 10V | 5V @ 2.5mA | 300 nC @ 10 V | 9670 pF @ 25 V | 10V | ±30V | — |
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APT29F100B2
MOSFET N-CH 1000V 30A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 1040W (Tc) | N-Channel | — | 1000 V | 30A (Tc) | 440mOhm @ 16A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | 8500 pF @ 25 V | 10V | ±30V | — |
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APT29F100L
MOSFET N-CH 1000V 30A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 | 1040W (Tc) | N-Channel | — | 1000 V | 30A (Tc) | 460mOhm @ 16A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | 8500 pF @ 25 V | 10V | ±30V | — |
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APT29F80J
MOSFET N-CH 800V 31A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 543W (Tc) | N-Channel | — | 800 V | 31A (Tc) | 210mOhm @ 24A, 10V | 5V @ 2.5mA | 303 nC @ 10 V | 9326 pF @ 25 V | 10V | ±30V | — |
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APT30F50B
MOSFET N-CH 500V 30A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 415W (Tc) | N-Channel | — | 500 V | 30A (Tc) | 190mOhm @ 14A, 10V | 5V @ 1mA | 115 nC @ 10 V | 4525 pF @ 25 V | 10V | ±30V | — |
|
APT30F50S
MOSFET N-CH 500V 30A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3PAK | 415W (Tc) | N-Channel | — | 500 V | 30A (Tc) | 190mOhm @ 14A, 10V | 5V @ 1mA | 115 nC @ 10 V | 4525 pF @ 25 V | 10V | ±30V | — |
|
APT30F60J
MOSFET N-CH 600V 31A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 355W (Tc) | N-Channel | — | 600 V | 31A (Tc) | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215 nC @ 10 V | 8590 pF @ 25 V | 10V | ±30V | — |
|
APT30M19JVFR
MOSFET N-CH 300V 130A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 700W (Tc) | N-Channel | — | 300 V | 130A (Tc) | 19mOhm @ 500mA, 10V | 4V @ 5mA | 975 nC @ 10 V | 21600 pF @ 25 V | 10V | ±30V | — |
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APT30M19JVR
MOSFET N-CH 300V 130A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 700W (Tc) | N-Channel | — | 300 V | 130A (Tc) | 19mOhm @ 500mA, 10V | 4V @ 5mA | 975 nC @ 10 V | 21600 pF @ 25 V | 10V | ±30V | — |
|
APT30M30JLL
MOSFET N-CH 300V 88A ISOTOP |
Microchip Technology | Active | — | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | — | N-Channel | — | 300 V | 88A (Tc) | 30mOhm @ 44A, 10V | 5V @ 2.5mA | 140 nC @ 10 V | 7030 pF @ 25 V | — | — | — |
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APT30M36B2FLLG
MOSFET N-CH 300V 84A T-MAX |
Microchip Technology | Active | — | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | — | N-Channel | — | 300 V | 84A (Tc) | 36mOhm @ 42A, 10V | 5V @ 2.5mA | 115 nC @ 10 V | 6480 pF @ 25 V | — | — | — |
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APT30M36JFLL
MOSFET N-CH 300V 76A ISOTOP |
Microchip Technology | Active | — | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | — | N-Channel | — | 300 V | 76A (Tc) | 36mOhm @ 38A, 10V | 5V @ 2.5mA | 115 nC @ 10 V | 6480 pF @ 25 V | — | — | — |
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APT30M36JLL
MOSFET N-CH 300V 76A ISOTOP |
Microchip Technology | Active | — | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | — | N-Channel | — | 300 V | 76A (Tc) | 36mOhm @ 38A, 10V | 5V @ 2.5mA | 115 nC @ 10 V | 6480 pF @ 25 V | — | — | — |
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APT30M36LLLG
MOSFET N-CH 300V 84A TO264 |
Microchip Technology | Active | — | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | — | N-Channel | — | 300 V | 84A (Tc) | 36mOhm @ 42A, 10V | 5V @ 2.5mA | 115 nC @ 10 V | 6480 pF @ 25 V | — | — | — |
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APT30M40B2VFRG
MOSFET N-CH 300V 76A T-MAX |
Microchip Technology | Obsolete | — | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | — | N-Channel | — | 300 V | 76A (Tc) | 40mOhm @ 500mA, 10V | 4V @ 2.5mA | 425 nC @ 10 V | 10200 pF @ 25 V | — | — | — |
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APT30M40JVFR
MOSFET N-CH 300V 70A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 450W (Tc) | N-Channel | — | 300 V | 70A (Tc) | 40mOhm @ 500mA, 10V | 4V @ 2.5mA | 425 nC @ 10 V | 10200 pF @ 25 V | 10V | ±30V | — |
|
APT30M40JVR
MOSFET N-CH 300V 70A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 450W (Tc) | N-Channel | — | 300 V | 70A (Tc) | 40mOhm @ 500mA, 10V | 4V @ 2.5mA | 425 nC @ 10 V | 10200 pF @ 25 V | 10V | ±30V | — |
|
APT30M60J
MOSFET N-CH 600V 31A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 355W (Tc) | N-Channel | — | 600 V | 31A (Tc) | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215 nC @ 10 V | 5890 pF @ 25 V | 10V | ±30V | — |
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APT30M61SLLG/TR
MOSFET N-CH 300V 54A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3PAK | 403W (Tc) | N-Channel | — | 300 V | 54A (Tc) | 61mOhm @ 27A, 10V | 5V @ 1mA | 64 nC @ 10 V | 3720 pF @ 25 V | 10V | ±30V | — |
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APT30M70BVFRG
MOSFET N-CH 300V 48A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 370W (Tc) | N-Channel | — | 300 V | 48A (Tc) | 70mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | 5870 pF @ 25 V | 10V | ±30V | — |
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APT30M70BVRG
MOSFET N-CH 300V 48A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 370W (Tc) | N-Channel | — | 300 V | 48A (Tc) | 70mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | 5870 pF @ 25 V | 10V | ±30V | — |
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APT30M70SVRG
MOSFET N-CH 300V 48A D3PAK |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3 [S] | 370W (Tc) | N-Channel | — | 300 V | 48A (Tc) | 70mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | 5870 pF @ 25 V | 10V | ±30V | — |
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APT30M85BVFRG
MOSFET N-CH 300V 40A TO247 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 300W (Tc) | N-Channel | — | 300 V | 40A (Tc) | 85mOhm @ 500mA, 10V | 4V @ 1mA | 195 nC @ 10 V | 4950 pF @ 25 V | 10V | ±30V | — |
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APT30M85BVRG
MOSFET N-CH 300V 40A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 300W (Tc) | N-Channel | — | 300 V | 40A (Tc) | 85mOhm @ 500mA, 10V | 4V @ 1mA | 195 nC @ 10 V | 4950 pF @ 25 V | 10V | ±30V | — |
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APT30M85SVFRG
MOSFET N-CH 300V 40A D3PAK |
Microchip Technology | Obsolete | — | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3 [S] | — | N-Channel | — | 300 V | 40A (Tc) | 85mOhm @ 500mA, 10V | — | 195 nC @ 10 V | 4950 pF @ 25 V | — | — | — |
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APT30N60BC6
MOSFET N-CH 600V 30A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 219W (Tc) | N-Channel | — | 600 V | 30A (Tc) | 125mOhm @ 14.5A, 10V | 3.5V @ 960µA | 88 nC @ 10 V | 2267 pF @ 25 V | 10V | ±20V | — |
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APT30N60KC6
MOSFET N-CH 600V 30A TO220 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 [K] | 219W (Tc) | N-Channel | — | 600 V | 30A (Tc) | 125mOhm @ 14.5A, 10V | 3.5V @ 960µA | 88 nC @ 10 V | 2267 pF @ 25 V | — | — | — |
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APT30N60SC6
MOSFET N-CH 600V 30A D3PAK |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D3PAK | 219W (Tc) | N-Channel | — | 600 V | 30A (Tc) | 125mOhm @ 14.5A, 10V | 3.5V @ 960µA | 88 nC @ 10 V | 2267 pF @ 25 V | 10V | ±20V | — |
|
APT31M100B2
MOSFET N-CH 1000V 32A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 1040W (Tc) | N-Channel | — | 1000 V | 32A (Tc) | 380mOhm @ 16A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | 8500 pF @ 25 V | 10V | ±30V | — |
|
APT31M100L
MOSFET N-CH 1000V 32A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 | 1040W (Tc) | N-Channel | — | 1000 V | 32A (Tc) | 400mOhm @ 16A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | 8500 pF @ 25 V | 10V | ±30V | — |
|
APT31N60BCSG
MOSFET N-CH 600V 31A TO247-3 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | 255W (Tc) | N-Channel | — | 600 V | 31A (Tc) | 100mOhm @ 18A, 10V | 3.9V @ 1.2mA | 85 nC @ 10 V | 3055 pF @ 25 V | 10V | ±30V | — |
|
APT31N80JC3
MOSFET N-CH 800V 31A ISOTOP |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 833W (Tc) | N-Channel | — | 800 V | 31A (Tc) | 145mOhm @ 22A, 10V | 3.9V @ 2mA | 355 nC @ 10 V | 4510 pF @ 25 V | 10V | ±20V | — |
|
APT32F120J
MOSFET N-CH 1200V 33A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 960W (Tc) | N-Channel | — | 1200 V | 33A (Tc) | 320mOhm @ 25A, 10V | 5V @ 2.5mA | 560 nC @ 10 V | 18200 pF @ 25 V | 10V | ±30V | — |
|
APT32M80J
MOSFET N-CH 800V 33A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 543W (Tc) | N-Channel | — | 800 V | 33A (Tc) | 190mOhm @ 24A, 10V | 5V @ 2.5mA | 303 nC @ 10 V | 9326 pF @ 25 V | 10V | ±30V | — |
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APT33N90JCCU2
MOSFET N-CH 900V 33A SOT227 |
Microchip Technology | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | SOT-227 | 290W (Tc) | N-Channel | Super Junction | 900 V | 33A (Tc) | 120mOhm @ 26A, 10V | 3.5V @ 3mA | 270 nC @ 10 V | 6800 pF @ 100 V | 10V | ±20V | — |
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APT33N90JCCU3
MOSFET N-CH 900V 33A SOT227 |
Microchip Technology | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | SOT-227 | 290W (Tc) | N-Channel | Super Junction | 900 V | 33A (Tc) | 120mOhm @ 26A, 10V | 3.5V @ 3mA | 270 nC @ 10 V | 6800 pF @ 100 V | 10V | ±20V | — |