Transistörler - FET, MOSFET - Tekil
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Komponentler
10,000 sonuç · Sayfa 59/200| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AOWF4S60
MOSFET N-CH 600V 4A TO262F |
Alpha and Omega Semiconductor, Inc. | Not For New Designs | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | TO-262F | 25W (Tc) | N-Channel | — | 600 V | 4A (Tc) | 900mOhm @ 2A, 10V | 4.1V @ 250µA | 6 nC @ 10 V | 263 pF @ 100 V | 10V | ±30V | — |
|
AOWF600A60
MOSFET N-CH 600V 8A TO262F |
Alpha and Omega Semiconductor, Inc. | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | TO-262F | 23W (Tc) | N-Channel | — | 600 V | 8A (Tj) | 600mOhm @ 2.1A, 10V | 3.5V @ 250µA | 11.5 nC @ 10 V | 608 pF @ 100 V | 10V | ±20V | — |
|
AOWF600A70
MOSFET N-CH 700V 8.5A TO262F |
Alpha and Omega Semiconductor, Inc. | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | TO-262F | 25W (Tc) | N-Channel | — | 700 V | 8.5A (Tj) | 600mOhm @ 2.5A, 10V | 3.5V @ 250µA | 15.5 nC @ 10 V | 870 pF @ 100 V | 10V | ±20V | — |
|
AOWF600A70F
MOSFET N-CH 700V 8.5A TO262F |
Alpha and Omega Semiconductor, Inc. | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | TO-262F | 25W (Tc) | N-Channel | — | 700 V | 8.5A (Tj) | 600mOhm @ 2.5A, 10V | 4V @ 250µA | 14.5 nC @ 10 V | 900 pF @ 100 V | 10V | ±20V | — |
|
AOWF7S60
MOSFET N-CH 600V 7A TO262F |
Alpha and Omega Semiconductor, Inc. | Not For New Designs | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | TO-262F | 25W (Tc) | N-Channel | — | 600 V | 7A (Tc) | 600mOhm @ 3.5A, 10V | 3.9V @ 250µA | 8.2 nC @ 10 V | 372 pF @ 100 V | 10V | ±30V | — |
|
AOWF7S65
MOSFET N-CH 650V 7A TO262F |
Alpha and Omega Semiconductor, Inc. | Not For New Designs | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | TO-262F | 25W (Tc) | N-Channel | — | 650 V | 7A (Tc) | 650mOhm @ 3.5A, 10V | 4V @ 250µA | 9.2 nC @ 10 V | 434 pF @ 100 V | 10V | ±30V | — |
|
AOWF8N50
MOSFET N-CH 500V 8A TO262F |
Alpha and Omega Semiconductor, Inc. | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | TO-262F | 27.8W (Tc) | N-Channel | — | 500 V | 8A (Tc) | 850mOhm @ 4A, 10V | 4.5V @ 250µA | 28 nC @ 10 V | 1042 pF @ 25 V | 10V | ±30V | — |
|
AOWF9N70
MOSFET N-CH 700V 9A TO262F |
Alpha and Omega Semiconductor, Inc. | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | TO-262F | 28W (Tc) | N-Channel | — | 700 V | 9A (Tc) | 1.2Ohm @ 4.5A, 10V | 4.5V @ 250µA | 35 nC @ 10 V | 1630 pF @ 25 V | 10V | ±30V | — |
|
AOY2610E
MOSFET N-CHANNEL 60V 19A TO251B |
Alpha and Omega Semiconductor, Inc. | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | MOSFET (Metal Oxide) | TO-251B | 59.5W (Tc) | N-Channel | — | 60 V | 19A (Ta) | 9.5mOhm @ 20A, 10V | 2.4V @ 250µA | 13 nC @ 4.5 V | 1100 pF @ 30 V | 4.5V, 10V | ±20V | — |
|
AOY2N60
MOSFET N-CH 600V 2A TO251 |
Alpha and Omega Semiconductor, Inc. | Active | -50°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | MOSFET (Metal Oxide) | TO-251B | 57W (Tc) | N-Channel | — | 600 V | 2A (Tc) | 4.7Ohm @ 1A, 10V | 4.5V @ 250µA | 11 nC @ 10 V | 295 pF @ 25 V | 10V | ±30V | — |
|
AOY4158P
MOSFET N-CH |
Alpha and Omega Semiconductor, Inc. | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
AOY423
MOSFET P-CH 30V 15A/70A TO251B |
Alpha and Omega Semiconductor, Inc. | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | MOSFET (Metal Oxide) | TO-251B | 2.5W (Ta), 90W (Tc) | P-Channel | — | 30 V | 15A (Ta), 70A (Tc) | 6.7mOhm @ 20A, 20V | 3.5V @ 250µA | 65 nC @ 10 V | 2760 pF @ 15 V | 10V, 20V | ±25V | — |
|
AOY514
MOSFET N-CH 30V 17A/46A TO251B |
Alpha and Omega Semiconductor, Inc. | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | MOSFET (Metal Oxide) | TO-251B | 2.5W (Ta), 50W (Tc) | N-Channel | — | 30 V | 17A (Ta), 46A (Tc) | 5.9mOhm @ 20A, 10V | 2.4V @ 250µA | 18 nC @ 10 V | 1187 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
AOY516
MOSFET N-CH 30V 46A TO251B |
Alpha and Omega Semiconductor, Inc. | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | MOSFET (Metal Oxide) | TO-251B | 2.5W (Ta), 50W (Tc) | N-Channel | — | 30 V | 46A (Tc) | 5mOhm @ 20A, 10V | 2.6V @ 250µA | 33 nC @ 10 V | 1333 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
AOY526
MOSFET N-CH 30V 18A/50A TO251B |
Alpha and Omega Semiconductor, Inc. | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | MOSFET (Metal Oxide) | TO-251B | 2.5W (Ta), 50W (Tc) | N-Channel | — | 30 V | 18A (Ta), 50A (Tc) | 5mOhm @ 20A, 10V | 2.4V @ 250µA | 33 nC @ 10 V | 1550 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
AOY528
MOSFET N-CH 30V 17A/50A TO251B |
Alpha and Omega Semiconductor, Inc. | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | MOSFET (Metal Oxide) | TO-251B | 2.5W (Ta), 50W (Tc) | N-Channel | — | 30 V | 17A (Ta), 50A (Tc) | 5.4mOhm @ 20A, 10V | 2.4V @ 250µA | 18 nC @ 10 V | 1400 pF @ 15 V | 4.5V, 10V | ±20V | — |
|
AOY66923
MOSFET N-CH 100V 16.5/58A TO251B |
Alpha and Omega Semiconductor, Inc. | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | MOSFET (Metal Oxide) | TO-251B | 6.2W (Ta), 73W (Tc) | N-Channel | — | 100 V | 16.5A (Ta), 58A (Tc) | 11mOhm @ 20A, 10V | 2.6V @ 250µA | 35 nC @ 10 V | 1725 pF @ 50 V | 4.5V, 10V | ±20V | — |
|
APL1001J
MOSFET N-CH 1000V 18A ISOTOP |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 520W (Tc) | N-Channel | — | 1000 V | 18A (Tc) | 600mOhm @ 500mA, 10V | 4V @ 2.5mA | — | 7200 pF @ 25 V | 10V | ±30V | — |
|
APL502B2G
MOSFET N-CH 500V 58A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 730W (Tc) | N-Channel | — | 500 V | 58A (Tc) | 90mOhm @ 29A, 12V | 4V @ 2.5mA | — | 9000 pF @ 25 V | 15V | ±30V | — |
|
APL502J
MOSFET N-CH 500V 52A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 568W (Tc) | N-Channel | — | 500 V | 52A (Tc) | 90mOhm @ 26A, 12V | 4V @ 2.5mA | — | 9000 pF @ 25 V | 15V | ±30V | — |
|
APL502LG
MOSFET N-CH 500V 58A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | 730W (Tc) | N-Channel | — | 500 V | 58A (Tc) | 90mOhm @ 29A, 12V | 4V @ 2.5mA | — | 9000 pF @ 25 V | 15V | ±30V | — |
|
APL602B2G
MOSFET N-CH 600V 49A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 730W (Tc) | N-Channel | — | 600 V | 49A (Tc) | 125mOhm @ 24.5A, 12V | 4V @ 2.5mA | — | 9000 pF @ 25 V | 12V | ±30V | — |
|
APL602J
MOSFET N-CH 600V 43A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 565W (Tc) | N-Channel | — | 600 V | 43A (Tc) | 125mOhm @ 21.5A, 12V | 4V @ 2.5mA | — | 9000 pF @ 25 V | 12V | ±30V | — |
|
APL602LG
MOSFET N-CH 600V 49A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | 730W (Tc) | N-Channel | — | 600 V | 49A (Tc) | 125mOhm @ 24.5A, 12V | 4V @ 2.5mA | — | 9000 pF @ 25 V | 12V | ±30V | — |
|
APT1001R1BN
MOSFET N-CH 1000V 10.5A TO247AD |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247AD | 310W (Tc) | N-Channel | — | 1000 V | 10.5A (Tc) | 1.1Ohm @ 5.25A, 10V | 4V @ 1mA | 130 nC @ 10 V | 2950 pF @ 25 V | 10V | ±30V | — |
|
APT1001R6BFLLG
MOSFET N-CH 1000V 8A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 266W (Tc) | N-Channel | — | 1000 V | 8A (Tc) | 1.6Ohm @ 4A, 10V | 5V @ 1mA | 55 nC @ 10 V | 1320 pF @ 25 V | 10V | ±30V | — |
|
APT1001RBN
MOSFET N-CH 1000V 11A TO247AD |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247AD | 310W (Tc) | N-Channel | — | 1000 V | 11A (Tc) | 1Ohm @ 5.5A, 10V | 4V @ 1mA | 130 nC @ 10 V | 2950 pF @ 25 V | 10V | ±30V | — |
|
APT1001RBVFRG
MOSFET N-CH 1000V 11A TO247 |
Microchip Technology | Active | — | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | — | N-Channel | — | 1000 V | 11A (Tc) | 1Ohm @ 5.5A, 10V | 4V @ 1mA | 150 nC @ 10 V | 3050 pF @ 25 V | — | — | — |
|
APT1001RBVRG
MOSFET N-CH 1000V 11A TO247 |
Microchip Technology | Active | — | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | — | N-Channel | — | 1000 V | 11A (Tc) | 1Ohm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | 3660 pF @ 25 V | — | — | — |
|
APT1001RSVRG
MOSFET N-CH 1000V 11A D3PAK |
Microchip Technology | Active | — | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3 [S] | — | N-Channel | — | 1000 V | 11A (Tc) | 1Ohm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | 3660 pF @ 25 V | — | — | — |
|
APT10021JFLL
MOSFET N-CH 1000V 37A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 694W (Tc) | N-Channel | — | 1000 V | 37A (Tc) | 210mOhm @ 18.5A, 10V | 5V @ 5mA | 395 nC @ 10 V | 9750 pF @ 25 V | 10V | ±30V | — |
|
APT10021JLL
MOSFET N-CH 1000V 37A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 694W (Tc) | N-Channel | — | 1000 V | 37A (Tc) | 210mOhm @ 18.5A, 10V | 5V @ 5mA | 395 nC @ 10 V | 9750 pF @ 25 V | 10V | ±30V | — |
|
APT10025JVFR
MOSFET N-CH 1000V 34A ISOTOP |
Microchip Technology | Active | — | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | — | N-Channel | — | 1000 V | 34A (Tc) | 250mOhm @ 500mA, 10V | 4V @ 5mA | 990 nC @ 10 V | 18000 pF @ 25 V | — | — | — |
|
APT10025JVR
MOSFET N-CH 1000V 34A ISOTOP |
Microchip Technology | Active | — | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | — | N-Channel | — | 1000 V | 34A (Tc) | 250mOhm @ 500mA, 10V | 4V @ 5mA | 990 nC @ 10 V | 18000 pF @ 25 V | — | — | — |
|
APT10026JFLL
MOSFET N-CH 1000V 30A ISOTOP |
Microchip Technology | Active | — | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | — | N-Channel | — | 1000 V | 30A (Tc) | 260mOhm @ 15A, 10V | 5V @ 5mA | 267 nC @ 10 V | 7114 pF @ 25 V | — | — | — |
|
APT10026JLL
MOSFET N-CH 1000V 30A ISOTOP |
Microchip Technology | Active | — | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | — | N-Channel | — | 1000 V | 30A (Tc) | 260mOhm @ 15A, 10V | 5V @ 5mA | 267 nC @ 10 V | 7114 pF @ 25 V | — | — | — |
|
APT10026L2FLLG
MOSFET N-CH 1000V 38A 264 MAX |
Microchip Technology | Active | — | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | 264 MAX™ [L2] | — | N-Channel | — | 1000 V | 38A (Tc) | 260mOhm @ 19A, 10V | 5V @ 5mA | 267 nC @ 10 V | 7114 pF @ 25 V | — | — | — |
|
APT10026L2LLG
MOSFET N-CH 1000V 38A 264 MAX |
Microchip Technology | Active | — | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | 264 MAX™ [L2] | — | N-Channel | — | 1000 V | 38A (Tc) | 260mOhm @ 19A, 10V | 5V @ 5mA | 267 nC @ 10 V | 7114 pF @ 25 V | — | — | — |
|
APT1002RBNG
MOSFET N-CH 1000V 8A TO247AD |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247AD | 240W (Tc) | N-Channel | — | 1000 V | 8A (Tc) | 1.6Ohm @ 4A, 10V | 4V @ 1mA | 105 nC @ 10 V | 1800 pF @ 25 V | 10V | ±30V | — |
|
APT10035B2FLLG
MOSFET N-CH 1000V 28A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 690W (Tc) | N-Channel | — | 1000 V | 28A (Tc) | 370mOhm @ 14A, 10V | 5V @ 2.5mA | 186 nC @ 10 V | 5185 pF @ 25 V | 10V | ±30V | — |
|
APT10035B2LLG
MOSFET N-CH 1000V 28A T-MAX |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | T-MAX™ [B2] | 690W (Tc) | N-Channel | — | 1000 V | 28A (Tc) | 350mOhm @ 14A, 10V | 5V @ 2.5mA | 186 nC @ 10 V | 5185 pF @ 25 V | 10V | ±30V | — |
|
APT10035JFLL
MOSFET N-CH 1000V 25A ISOTOP |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 520W (Tc) | N-Channel | — | 1000 V | 25A (Tc) | 370mOhm @ 14A, 10V | 5V @ 2.5mA | 186 nC @ 10 V | 5185 pF @ 25 V | — | — | — |
|
APT10035JLL
MOSFET N-CH 1000V 25A ISOTOP |
WEC | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | 520W (Tc) | N-Channel | — | 1000 V | 25A (Tc) | 350mOhm @ 14A, 10V | 5V @ 2.5mA | 186 nC @ 10 V | 5185 pF @ 25 V | 10V | ±30V | — |
|
APT10035LFLLG
MOSFET N-CH 1000V 28A TO264 |
Microchip Technology | Active | — | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | — | N-Channel | — | 1000 V | 28A (Tc) | 370mOhm @ 14A, 10V | 5V @ 2.5mA | 186 nC @ 10 V | 5185 pF @ 25 V | — | — | — |
|
APT10035LLLG
MOSFET N-CH 1000V 28A TO264 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 [L] | 690W (Tc) | N-Channel | — | 1000 V | 28A (Tc) | 350mOhm @ 14A, 10V | 5V @ 2.5mA | 186 nC @ 10 V | 5185 pF @ 25 V | 10V | ±30V | — |
|
APT1003RBLLG
MOSFET N-CH 1000V 4A TO247 |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 [B] | 139W (Tc) | N-Channel | — | 1000 V | 4A (Tc) | 3Ohm @ 2A, 10V | 5V @ 1mA | 34 nC @ 10 V | 694 pF @ 25 V | 10V | ±30V | — |
|
APT1003RKLLG
MOSFET N-CH 1000V 4A TO220 |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 [K] | 139W (Tc) | N-Channel | — | 1000 V | 4A (Tc) | 3Ohm @ 2A, 10V | 5V @ 1mA | 34 nC @ 10 V | 694 pF @ 25 V | 10V | ±30V | — |
|
APT1003RSFLLG
MOSFET N-CH 1000V 4A D3PAK |
Microchip Technology | Active | — | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3 [S] | — | N-Channel | — | 1000 V | 4A (Tc) | 3Ohm @ 2A, 10V | 5V @ 1mA | 34 nC @ 10 V | 694 pF @ 25 V | — | — | — |
|
APT1003RSFLLG/TR
MOSFET N-CH 1KV 4A D3PAK |
Microchip Technology | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3PAK | 139W (Tc) | N-Channel | — | 1000 V | 4A (Tc) | 3Ohm @ 2A, 10V | 5V @ 1mA | 34 nC @ 10 V | 694 pF/m @ 25 V | 10V | ±30V | — |
|
APT1003RSLLG
MOSFET N-CH 1000V 4A D3PAK |
Microchip Technology | Active | — | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | D3 [S] | — | N-Channel | — | 1000 V | 4A (Tc) | 3Ohm @ 2A, 10V | 5V @ 1mA | 34 nC @ 10 V | 694 pF @ 25 V | — | — | — |